• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Journal of Biomedical Engineering Research
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• v.16 no.2
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• pp.231-238
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• 1995

Tc-99m-MIBI (Sestamibi) myocardial SPECT along with TI-201 tomographic Imaging has demonstrated wide application and high image quality sufficient for the diagnosis of myocardial perfusion defect, which consequently reflects regional myocardial blood flow. The qualitative values of myocardial SPECT with Tc-99m-MIBI as well ds the quantitative cases depend in some degree on the reconstruction techniques of multiple projections. Filtered backprojection (FBP) Is the common standard method for reconstruction rather than the complicated and time-consuming arithmetic methods. In FBP it is known that the distribution of radioactivity in reconstructed transverse slices varies with the selected litter parameters such as cutoff frequencies and order (Butterworth case) The cutoff frequencies used in clinicAl practice partially remove and decrease the true radioactive distribution and alter the pixel counts, which lead to underestimation of true counts in specific myocardial regions. In this study, we have investigated the effect of cutoff frequencies of reconstruction filter on the artifactually induced perfusion defects, which are often demonstrated near inferior and/or inferoseptal cardiac walls due to the intense hepatic uptake of Tc-99m-MIBI. A computerized method for Identifying the relative degree of artifactual perfusion defect and for comparing those degrees along with the relative amount of hepatic uptake to myocardium was developed and patient images were studied to observe the quantitative degree of underestimation of myocardial perfusion, and to propose some reasonable threshold of cutoff frequency in the diagnosis of perfusion defect quantitatively. We concluded that from the quantitative viewpoint cutoff frequencies may be used as high as possible with the sacrifice of homogeneity of image quality, and those frequencies lower than the common 0.3 Wyquist frequency would reveal severe degradation of radioactive distribution near inferior and/or inferoseptal myocardium when applying Butterworth or low pass filter.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.143-143
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• 2003

최근 생활수준 및 생활환경의 향상에 힘입어 청결 및 쾌적을 추구하는 것이 사회적 현상으로 나타나고 있다. 요즘처럼 현대화된 시대에 '왜 항균제가 필요한 것일까' 라는 자연스러운 의문이 발생하게 되지만 현실은 항균제를 이용한 다양한 항균제품, 항균가전제품, 항균가공 내ㆍ건자재 및 항상 신선한 선도를 유지할 수 있는 제품 등이 호황을 누리고 있는 것이 현실이며 그 시장 규모는 3,000억원을 상회하고 있다. 이러한 항균 가공제품이 호평을 받는 사회적 배경은 우리를 둘러싼 주변 삶의 경제환경 신장에 따른 쾌적성 추구와 밀접한 관련이 있을 것이다. 이처럼 항균기능이 부여된 제품이 호평을 받고 있음에도 불구하고 국내에서는 항균제품의 주 기능 역할을 하는 항균제에 대한 개발은 초기단계로 국내 시장에서 많은 연구가 이루어지고 있는 실정이다. 국내의 경우, 유기 항균제의 사용이 전체 사용량의 80%를 차지하고 있고, 제올라이트나 인산염을 무기 담체로 항균성 금속 이온(Ag, Zn)을 물리적으로 결합시킨 무기 항균제가 개발된 것이 최근의 기술 수준이다. 이러한 유기 항균제는 미생물의 번식을 억제 또는 사멸시키기 위한 것이지만, 생체의 피부 세포에도 영향을 줄 수 있는 피부 자극원의 하나로 그 사용이 점차로 제한되고 있다. 무기 항균제는 안정성이나 항균력에서는 유기항균제 보다는 뛰어나지만 가격(경제성)이나 색(Color), 사용성 (Application)측면에서는 여러 가지 문제를 나타내고 있다. 귀금속이므로 가격이 고가이며, 금속고유의 색으로 회귀하려는 플라즈몬 효과에 의해 색(Color)의 조절이 불가능, 분말형태이므로 지류에 첨가시키는 방법 등이 큰 문제로 부각되고 있다. 이 러한 문제점을 해결할 수 있는 기술이 나노기술이다 나노기술(Nano-Technology)은 물질을 분자, 원자단위에서 규명하고 제어하는 기술로서 원자, 분자를 적절히 결합시킴으로서 기존 물질의 변형, 개조는 물론 신물질의 창출을 가능케 하는 기술이다. 나노기술은 여러분야로 세분화되지만 그중 산업화에 가장 접목이 용이한 기술이 나노입자(Nano-Particle)제어 기술이며, 나노입자는 통상적으로 입자크기가 수 nm에서 100nm이하 크기의 넓은 표면적을 가진 콜로이드 상의 불균일 분산입자를 말한다. 나노입자(Nano-Particle)는 기존의 입자($\mu\textrm{m}$)보다 물리적 및 광학적 성질이 우수하고 그 자체의 기능면에서도 탁월하기 때문에 국내외의 여러 산업에서도 기존제품의 품질 향상 및 기능성부여, 기존 공정의 개선 및 생산 원단위 절감 등 경제적, 생산적인 측면을 고려하여 적합한 나노입자를 채택, 적용하고자 하는데 많은 노력을 기울이고 있다. 이에 천연 항생제로 알려진 Ag, 즉 항균 및 탈취, 전기적 기능이 우수한 은(silver, Ag)을 나노(nm) 입자희 제조하고 이와 더불어 이산화티탄(TiO2) 복합 분체를 제조하여 제조된 나노 입자 및 복합 분체를 사용함으로써 환경 친화적이며 다양한 용도로 활용 가능한 소재 개발에 연구 내용을 두고 있다. 본 연구를 통한 기대 효과로서 환경성 측면에서는 환경 친화적인 나노 입자의 제조로 기능성 나노 입자에 친 환경성을 부여하여 유기계 항균제 대체 효과를 발현하고 이를 제품에 적용함으로써 다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적화에 의한 기능성 나노 입자 제조 기술을 확립하고 2차 오염 발생원인 유기계 항균제를 무기계 항균제로 대체할 수 있다. 이와 더불어 안료의 형상 균일화 기술을 확보하여 가격 경쟁력 및 부가가치 향상을 기대할 수 있다.

• Environmental Mutagens and Carcinogens
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• v.22 no.4
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• pp.303-311
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• 2002

This study evaluated the concentrations of urinary metabolites of polycyclic aromatic hydrocarbons (PAHs) in industrial waste incineration workers. The effect of genetic polymorphisms of xenobiotic metabolism enzymes on urinary concentration of PAH metabolites was assessed. And, aromatic DNA adduct levels were also determined in total white blood cells. Fifty employees were recruited from a company handling industrial wastes located in Ansan, Korea: non-exposed group (n=21), exposed group (n=29). Sixteen ambient PAHs were determined by GC/MSD (NIOSH method) from personal breathing zone samples of nine subjects near incinerators. Urinary 1-hydroxypyrene glucuronide (1-OHPG), a major pyrene metabolite, was assayed by synchronous fluorescence spectroscopy after immunoaffinity purification using monoclonal antibody 8E11 (SFS/IAC). Multiplex PCR was used for genotyping for GSTMI/TI and PCR-RFLP for genotyping of CYP1A1 (MspI and Ile/Val). PAH-DNA adducts in peripheral blood WBC were measured by the nuclease P1-enhanced postlabeling assay. Smoking habit, demographic and occupational information were collected by self-administered questionnaire. The range of total ambient PAH levels were 0.00-7.00 mg/㎥ (mean 3.31). Urinary 1-OHPG levels were significantly higher in workers handling industrial wastes than in those with presumed lower exposure to PAHs (p=0.006, by Kruskal-Wallis test). There was a statistically significant dose-response increase in 1-OHPG levels with the number of cigarettes consumed per day (Pearson correlation coefficient=0.686, p<0.001). Urinary 1-OHPG levels in occupationally exposed smoking workers were highest compared with non-occupationally exposed smokers (p=0.053, by Kruskal-Wallis test). Smoking and GSTMI genotype were significant predictors for log-transformed 1-OHPG by multiple regression analysis (overall model R²=0.565, p<0.001), whereas smoking was the only significant predictor for log-transformed aromatic DNA adducts (overall model R²=0.249, p=0.201). Aromatic DNA adducts was also a significantly correlation between log transferred urinary 1-OHPG levels (pearson's correlation coefficient=0.307, p=0.04). However, the partial correlation coefficient adjusting for Age, Sex, and cigarette consumption was not significant (r=0.154, p=0.169). The significant association exists only in individuals with the GSTMI null genotype (pearsons correlation coefficient=0.516, p=0.010; partial correlation coefficient adjusting for age, sex, and cigarette consumption, r=0.363, p=0.038). Our results suggest that the significant increase in urinary 1-OHPG in the exposed workers is due to higher prevalence of smokers among them, and that the association between urinary PAH metabolites and aromatic DNA adducts in workers of industrial waste handling may be modulated by GSTMI genotype. There results remain to be confirmed in future larger studies.

• The Journal of Internal Korean Medicine
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• v.32 no.3
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• pp.345-360
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• 2011

Objectives : This study was examined to investigate the effects of Cheonmagudeng-um gagam (CGG) extract on spontaneous hypertension. Methods : For the study of CGG, we divided rats into three groups. The normal group was Wister Kyoto rats (WKY). The control group was spontaneously hypertensive rats (SHR). The treatment group was SHR which were administered CGG extract (SHR-CGG). SHR-CGG were orally administered CGG extract that was diluted in distilled water at the various concentrations for 4 weeks (234.5 mg/kg) and SHR were orally administered the same dosage of plain distilled water as SHR-CGG. Then we measured anti-oxygen effects, ACE inhibitory activity, weight of heart and kidney, blood pressure, heart rate, plasma aldosterone, electrolyte, creatinine, uric acid, BUN, and observed the cortex of the cardiac muscle, kidney, and adrenal gland. Results : CGG increased DPPH scavenging activity and SOD similar activity depending on the concentration. CGG significantly decreased ROS, TNF-${\alpha}$, IL-6, IL-$1{\beta}$, heart weight, blood pressure, heart rate, aldosterone, and BUN in SHR. CGG increased ACE inhibition activity depending on the concentration. CGG inhibited the heart, kidney and adrenal gland tissue injury that is caused by hypertension. Conclusions : These results suggest that CGG is effective in treatment and prevention of hypertension.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.176-177
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• 2013

Surface plasmon polaritons (SPPs) have attracted the attention of scientists and engineers involved in a wide area of research, microscopy, diagnostics and sensing. SPPs are waves that propagate along the surface of a conductor, usually metals. These are essentially light waves that are trapped on the surface because of their interaction with the free electrons of conductor. In this interaction, the free electrons respond collectively by oscillating in resonance with the light wave. The resonant interaction between the surface charge oscillation and the electromagnetic field of the light constitutes the SPPs and gives rise to its unique properties. In this papers, we studied theoretical and experimental extraordinary transmittance (T) and reflectance (R) of 2 dimensional metal hole array (2D-MHA) on GaAs in consideration of the diffraction orders. The 2d-MHAs was fabricated using ultra-violet photolithography, electron-beam evaporation and standard lift-off process with pitches ranging from 1.8 to $3.2{\mu}m$ and diameter of half of pitch, and was deposited 5-nm thick layer of titanium (Ti) as an adhesion layer and 50-nm thick layer of gold (Au) on the semiinsulating GaAs substrate. We employed both the commercial software (CST Microwave Studio: Computer Simulation Technology GmbH, Darmstadt, Germany) based on a finite integration technique (FIT) and a rigorous coupled wave analysis (RCWA) to calculate transmittance and reflectance. The transmittance was measured at a normal incident, and the reflectance was measured at variable incident angle of range between $30^{\circ}{\sim}80^{\circ}$ with a Nicolet Fourier transmission infrared (FTIR) spectrometer with a KBr beam splitter and a MCT detector. For MHAs of pitch (P), the peaks ${\lambda}$ max in the normal incidence transmittance spectra can be indentified approximately from SP dispersion relation, that is frequency-dependent SP wave vector (ksp). Shown in Fig. 1 is the transmission of P=2.2 um sample at normal incidence. We attribute the observation to be a result of FTIR system may be able to collect the transmitted light with higher diffraction order than 0th order. This is confirmed by calculations: for the MHAs, diffraction efficiency in (0, 0) diffracted orders is lower than in the (${\pm}x$, ${\pm}y$) diffracted orders. To further investigate the result, we calculated the angular dependent transmission of P=2.2 um sample (Fig. 2). The incident angle varies from 30o to 70o with a 10o increment. We also found the splitting character on reflectance measurement. The splitting effect is considered a results of SPPs assisted diffraction process by oblique incidence.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.681-682
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• 2013

전기는 우리 주변의 에너지 형태 중에서 가장 편리하고 광범위하게 사용되고 있다. 이러한 전기는 전자제품, 전기자동차, 에너지 저장 플랜트 등 매우 많은 분야에서 저장되고 사용되고 있다. 특히 에너지 저장 용량의 확대는 휴대폰, 노트북 PC 등 휴대용 IT 기기의 성장에 결정적인 역할을 하였다. 가볍고 작으면서도 고용량의 전기 에너지 저장 장치가 없었다면, 통신이나 인터넷 그리고 오락 등 다양한 기능을 작은 휴대용 기기에 구현할 수 없었을 것이다. 그러나 시간이 흐를수록 기기의 요구 성능이 높아지고 소비자의 니즈가 더욱더 다양해지고 고도화될수록 단일 부품으로 가장 큰 부피를 차지하는 에너지 저장 장치의 용량과 디자인은 점점 중요해지고 있다. 이러한 에너지 저장 장치에서 가장 친숙한 형태는 2차 전지 계열이다. 납 축전지를 비롯하여, 니켈수소, 니켈카드뮴, electrochemical capacitor와 Li ion 계열 등이 대표적이다. 특히 Li ion 배터리는 모바일, 자동차 및 에너지 저장 그리드 등과 같은 다양한 분야에 가장 많이 적용되고있다. Li ion 배터리에 대하여 현재의 핵심적인 연구분야는 전극 재료(cathode, anode)와 electrolyte에 대한 것이다. Anode 전극 재료 중에서 가장 많이 사용되는 재료는 카본을 기반으로 하는 재료로 안정성에 대한 장점이 있지만 에너지 밀도가 낮다는 단점이 있다. 에너지 저장 용량 증가에 대한 필요성이 증가하기 때문에 현재 많이 사용되고 있는 에너지 밀도가 낮은 카본 재료를 대체하기 위해서 이론 용량이 높다고 알려진 실리콘과 같은 메탈이나 주석 산화물과 같은 천이 금속 산화물에 대하여 많은 연구가 진행되고 있다. 특히 현재까지 알려진 많은 재료 중에서 가장 큰 capacity (~4,000 mAh/g)를 가지고 있다고 알려진 실리콘이 카본의 대체 재료로 많은 연구가 진행되고 있다. 그러나, Li 과 반응을 하며 약 300~400%에 달하는 부피팽창이 발생하고, 이러한 부피 팽창 때문에 충 방전이 진행됨에 따라 current collector로부터 박리되는 현상을 보여 빠른 용량 감소를 보여주고 있다. 본 연구에서는 adhesion layer를 current collector와 실리콘 전극 재료 사이에 삽입하여 충 방전 시 부피팽창에 의한 미세구조의 변화와 electrochemical 특성에 대한 영향을 알아보았다. 실험에 사용한 anode 전극은 상용 Cu foil current collector에 RF/DC magnetron 스퍼터링을 통해 다양한 종류(Ti, Ta 등)의 adhesion layer과 200 nm 두께의 Si 박막을 증착하였다. 또한 Bio-logic Potentiostat/ Galvanostat VMP3 와 WanAtech automatic battery cycler 장비를 사용하여 0.2 C-rate로 half-cell 타입의 코인 셀로 조립한 전극에 대한 충 방전 실험을 진행하였다. Adhesion layer의 사용으로 인해 실리콘 박막과 Cu current collector 사이의 박리 현상을 줄여줄 수 있었고, 충 방전 시 Cu 원자의 실리콘 박막으로의 확산을 통한 brittle한 Cu-Si alloy 형성을 막아 줄 수 있어 큰 특성 향상을 확인할 수 있었다. 또한, 리튬과 실리콘의 반응을 통한 형태와 미세구조 변화를 SEM, TEM 등의 다양한 장비를 사용하여 확인하였고, 이를 통해 adhesion layer의 사용이 전극의 특성향상에 큰 영향을 끼쳤다는 것을 확인할 수 있었다.

• Journal of Korean Library and Information Science Society
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• v.4
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• pp.61-90
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• 1977

The historical development of books examination with utilizing science become inevitable to the machanization of library catalogues. With the advance of times, like this, a new- development of $Indention('||'&'||'$ : Kisun) must be sought for which is a kind of descriptive catalogues being used now. This paper is scheduled to grasp problems in the course of using and logical grounds of Indention which hal-e been used disordering. It must be considered that four kinds of Icdention settlement is suitable to the features of Korean letters. 1) TI-e must consider the features of Korean Language and Oriental Language writing(Japan, China). There must be a establishment of floating $Indention('||'&'||'E$ : Kisun), which are suitable for the writting style or hand writting man on the point of most of Koreans are depend upon hand witting, then books catalogues like western language, not left edge of the cards of the $Indention(B$ : Kisun) establishing, from edge to Call Number, from the last of the Call Number to First Indention(%-Bl63). First Indention(%-%%) to a space of Second $indention($\ulcorner^%)$ must be established and then, every catalogue and Indentions are distinguished surely. 2) \Then we consider the developing catalogue making in the future. It is important to establish a fixed $Indention('||'&'||'$ : Kisun) for machinization of typewriter(Korean, Mimeographing) and computer, etc ... not "Cm" unit but "Space" unit, and consider oriental letter, ne make more surplus space as a Indention, we can give anadaptablity of using machines. 3) Considering typography printing and type-setting printing by printing type, we must fit the $Indention(\ulcorner'||'&'||'$ : Kisun) as a "Cm" unit, and there must be a re-adjustment of $Indention(g$$ : Kisun) which considered the complexity of Call Number by a mass of collecting books like this, the establishment of Indention(E'||'&'||'j!: Kisun). We must not use a uilified one as a concrete conception by "Space" or "Cm" unit which has been used now but re-adjusted adaptably which can be fited as a method of making of catalogues. 4) The name of $Indcntion(J, S$ : Kisun) has becll called 7;arious methods until now, but English Indention which has been used without any concrete mexirig must be used as a ours fitable as a our mind. The above mentioned is presented as a Indention and examinational l~letilods by myself style, I wants these r i l l be helpful to the future developments of the machanization of Indention $(sf:$ Ki sun). Concrete studies must be continued in the future for development of $Indention(zj:$ : Kisun). : Kisun).