• 대기
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• 제24권2호
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• pp.151-158
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• 2014

This study investigated a method for the discrimination of precipitation type using thickness of geopotential height at 1000~850 hPa and improved Matsuo's scheme over South Korea using 7 upper-level observations data during winter time from 2003 to 2008. With this research, it was suggested that thickness between snow and rain should range from 1281 to 1297 gpm at 1000~850 hPa. This threshold was suitable for determining precipitation type such as snow, sleet and rain and it was verified by investigation at 7 upper-level observation and 10 surface observation data for 3 years (2009~2011). In addition, precipitation types were separated properly by Matsuo's scheme and its improved one, which is a fuction of surface air temperature and relative humidity, when they lie in mixed sectors. Precipitation types in the mixed sector were subdivided into 5 sectors (rain, rain and snow, snow and rain, snow, and snow cover). We also present the decision table for monitoring and predicting precipitation types using model output of Korea Local Analysis and Prediction System (KLAPS) and observation data.

• 대기
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• 제27권2호
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• pp.119-131
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• 2017

We present and discuss the Tropopause Folding Turbulence Detection (TFTD) algorithm for the Korean Communication, Ocean, Meteorological Satellite (COMS) which is originally developed for the Tropopause Folding Turbulence Product (TFTP) from the Geostationary Operational Environmental Satellite (GOES)-R. The TFTD algorithm assumes that the tropopause folding is linked to the Clear Air Turbulence (CAT), and thereby the tropopause folding areas are detected from the rapid spatial gradients of the upper tropospheric specific humidity. The Layer Averaged Specific Humidity (LASH) is used to represent the upper tropospheric specific humidity calculated using COMS $6.7{\mu}m$ water vapor channel and ERA-interim reanalysis temperature at 300, 400, and 500 hPa. The comparison of LASH with the numerical model specific humidity shows a strong negative correlation of 80% or more. We apply the single threshold, which is determined from sensitivity analysis, for cloud-clearing to overcome strong gradient of LASH at the edge of clouds. The tropopause break lines are detected from the location of strong LASH-gradient using the Canny edge detection based on the image processing technique. The tropopause folding area is defined by expanding the break lines by 2-degree positive gradient direction. The validations of COMS TFTD is performed with Pilot Reports (PIREPs) filtered out Convective Induced Turbulence (CIT) from Dec 2013 to Nov 2014 over the South Korea. The score test shows 0.49 PODy (Probability of Detection 'Yes') and 0.64 PODn (Probability of Detection 'No'). Low POD results from various kinds of CAT reported from PIREPs and the characteristics of high sensitivity in edge detection algorithm.

• 한국응용곤충학회지
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• 제31권4호
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• pp.492-495
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• 1992

멸구매미충의 포식성천적인 등검은황록장님노린재의 온도별 난기간, 약충기간, 성충기간(female) 및 산란수를 조사 하였고 온도와 난과 약충의 발육속도와의 관계를 조사하였다. 온도별 난기간은 20, 25, $30^{\circ}C$에서 각각 14.43, 9.33, 6.94일 이었다. 약충기간은 20, 25, $30^{\circ}C$에서 각각 24.30, 14.42, 11.90일 이었다. 성충기간(female)은 20, 25, $30^{\circ}C$에서 각각 11.20, 11.93, 11.89일 이었다. 발육영점온도는 난이 $^10.7{\circ}C$, 약충이 $9.8^{\circ}C$였으며 난에서 약충까지는 $10.2^{\circ}C$였고, 유효적산온일도는 난이 133.9, 약충이 235.8, 난에서 약충까지는 368.0온일도 있었다. 산란수는 25, $30^{\circ}C$에서 각각 26.0, 22.4개 이었다.

• 대한전자공학회논문지SD
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• 제39권8호
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• pp.17-23
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• 2002

전자빔 증착 장비를 이용하여 SrS:CuCl TFEL 소자를 제작한 후, 발광특성을 조사하였다. 형광체 모체는 SrS 분말을 사용하였고, 발광중심체로는 CuCl 분말을 0.05 ~ 0.6 at% 범위에서 첨가하였다. 증착 온도 500℃, 전자빔 전류 20 ~ 40 mA 및 증착율 5 ~ 10 /sec의 조건에서 형광층 두께를 6000 으로 증착시켰다. CuCl 농도가 낮을 때에는 monomer, dimer, trimer 및 tetramer 발광센터에 의한 청색 발광을 확인할 수 있었으나 휘도가 낮았다. CuCl 농도가 높을 때에는 dimer와 trimer 발광센터에 의한 밝은 녹청색 빛을 방출하였다. 최적의 발광특성은 CuCl 농도를 0.2 at% 첨가한 SrS:CuCl TFEL 소자에서 관찰되었으며, 문턱전압, 휘도(L/sub 40/), 효율(η/sub 20/) 및 CIE 색좌표는 각각 55 V, 728 cd/㎡, 0.49 lm/W 및 (0.21, 0.33)을 나타내었다.

• 한국통신학회논문지
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• 제35권1A호
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• pp.80-86
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• 2010

본 논문은 게이트 채널 길이 0.13 [${\mu}m$]의 p-MOS 트랜지스터에서 음 바이어스 온도 불안정(NBTI) 전류 스트레스 인가에 의한 게이트유기 드레인 누설(GIDL) 전류를 측정 분석하였다. NBTI 스트레스에 의한 문턱전압의 변화와 문턱전압아래 기울기와 드레인 전류 사이에 상관관계로부터, 소자의 특성 변화의 결과로 열화에 대한 중요한 메카니즘이 계면 상태의 생성과 관련이 있다는 것을 분석하였다. GIDL 전류의 측정 결과로부터, NBTI 스트레스에 기인한 계면상태에서 전자-정공 쌍의 생성이 GIDL 전류의 증가의 결과를 도출하였다. 이런 결과로 부터, 초박막 게이트 산화막 소자에서 NBTI 스트레스 후에 증가된 GIDL 전류를 고려해야만 한다. 또한, 동시에 신뢰성 특성과 직류 소자 성능의 고려가 나노 크기의 CMOS 통신회로 설계의 스트레스 파라미터들에서 반드시 있어야 한다.

• 대한전자공학회논문지SD
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• 제47권2호
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• pp.87-93
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• 2010

이 글은 공정, 전압, 온도 변화를 극복하기 위한 2단계 자동 트랜스컨덕턴스 조절 기능을 가진 저전력, 광대역 전압제어발진기의 설계에 관한 논문이다. 광대역에서 전압제어발진기를 발진시키기 위해, 디지털 자동 트랜스컨덕턴스 조절 루프와 아날로그 자동 진폭조절 루프가 사용되었다. 전압제어발진기의 출력 스윙 크기에 따라 트랜지스터의 바디전압을 조절하는 기능도 저전력 구현을 위해 설계되었다. 소모전류는 1.2 V 공급전압에서 2 mA에서 6 mA까지 1 mA 단위로 조절된다. 전압제어발진기의 튜닝 범위는 2.35 GHz에서 5 GHz까지 2.65 GHz로써 72%이다. 위상잡음은 중심주파수 3.2 GHz를 기준으로 1MHz 떨어진 지점에서 -117 dBc/Hz 이다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.16.1-16.1
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• 2009

We have fabricated solution processed oxide semiconductor active layer for thin film transistors (TFTs). The oxide semiconductor layers were prepared by ink-jet printing the sol-gel precursor solution based on doped-ZnO. Inorganic ZnO-based thin films have drawn significant attention as an active channel layer for TFTs applications alternative to conventional Si-based materials and organic semiconducting materials, due to their wide energy band gap, optical transparency, high mobility, and better stability. However, in spite of such excellent device performances, the fabrication methods of ZnO related oxide active layer involve high cost vacuum processes such as sputtering and pulsed laser deposition. Herein we introduced the ink-jet printing technology to prepare the active layers of oxide semiconductor. Stable sol-gel precursor solutions were obtained by controlling the composition of precursor as well as solvents and stabilizers, and their influences on electrical performance of the transistors were demonstrated by measuring electrical parameters such as off-current, on-current, mobility, and threshold voltage. Microstructure and thermal behavior of the doped ZnO films were investigated by SEM, XRD, and TG/DTA. Furthermore, we studied the influence of the ink-jet printing conditions such as substrate temperature and surface treatment on the microstructure of the ink-jet printed active layers and electrical performance. The mobility value of the device with optimized condition was about 0.1-1.0 $cm^2/Vs$ and the on/off current ratio was about $10^6$. Our investigations demonstrate the feasibility of the ink-jet printed oxide TFTs toward successful application to cost-effective and mass-producible displays.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.521-522
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• 2006

In this paper, hybrid air-water discharges were used to develop an optimal condition for providing a high level of water decomposition for hydrogen yield. Electrical and optical phenomena accompanying the discharges were investigated along with feeding gases, flow rates, and point-to-plane electrode gap distance. The primary focus of this experiment was put on the optical emission of the near UV range, with the energy threshold sufficient for water dissociation and excitation. The $OH(A^{2+},'=0\;X^2,"=0$) band's optical emission intensity indicated the presence of plasma chemical reactions involving hydrogen formation. In the gaseous atmosphere saturated with water vapor the OH(A-X) band intensity was relatively high compared to the liquid and transient phases although the optical emission strongly depended on the flow rate and type of feeding gas. In the gaseous phase discharge phenomenon for Ar carrier gas transformed into a gliding arc via the flow rate growth. OH(A-X) band's intensity increased according to the flow rate or residence time of He feeding gas. Reciprocal tendency was acquired for $N_2$ and Ar carrier gases. The peak value of OH(A-X) intensity was observed in the proximity of the water surface, however in the cases of Ar and $N_2$ with 0.5 SLM flow rate peaks shifted to the region below the water surface. Rotational temperature ($T_{rot}$) was estimated to be in the range of 900-3600 K, according to the carrier gas and flow rate, which corresponds to the arc-like-streamer discharge.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.473-479
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• 2011

In this paper, we have compared amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) with the nano-crystalline embedded-IGZO ($N_c$-embedded-IGZO) TFT fabricated by solid-phase crystallization (SPC) technique. The field effect mobility (${\mu}_{FE}$) of $N_c$-embedded-IGZO TFT was 2.37 $cm^2/Vs$ and the subthreshold slope (S-factor) was 0.83 V/decade, which showed lower performance than those of a-IGZO TFT (${\mu}_{FE}$ of a-IGZO was 9.67 $cm^2/Vs$ and S-factor was 0.19 V/decade). This results originated from generation of oxygen vacancies in oxide semiconductor and interface between gate insulator and semiconductor due to high temperature annealing process. However, the threshold voltage shift (${\Delta}V_{TH}$) of $N_c$-embedded-IGZO TFT was 0.5 V, which showed 1 V less shift than that of a-IGZO TFT under constant current stress during $10^5$ s. This was because there were additionally less increase of interface trap charges in Nc-embedded-IGZO TFT than a-IGZO TFT.

• 한국재료학회지
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• 제19권1호
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• pp.33-36
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• 2009

Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at $100^{\circ}C$ for 10 hours. Au/inorganic-organic composite layer/$SiO_2$ structures were fabricated and the mobility, $I_{on}/I_{off}$ ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately $10^{-4}cm^2/V{\cdot}s$. However, the mobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the $I_{on}/I_{off}$ ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.