• 제목/요약/키워드: Threshold switch

검색결과 70건 처리시간 0.02초

스위치드 커패시터를 이용한 동작 주파수에 무관한 정전용량 터치스위치 (Capacitive Touch Switch Regardless of Operating Frequency Using a Switched-Capacitor)

  • 이무진;성광수
    • 조명전기설비학회논문지
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    • 제27권6호
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    • pp.88-94
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    • 2013
  • This paper proposes a capacitive touch switch using a switched-capacitor. The proposed method charges capacitance for measurement using the switched-capacitor until the voltage across the capacitance reaches a threshold voltage. As the proposed method uses the number of times being charged to measure the capacitance, the method has no relation with the operating frequency of the switched-capacitor. This paper also shows the quantization resolution of the proposed method is related to the capacitance in the switched-capacitor and the threshold voltage, i.e., the resolution is improved when the capacitance in the switched-capacitor is decreased and the threshold voltage is increased. Simulation result shows the method gives 31fF quantization resolution when the capacitance in the switched-capacitor is 50fF and threshold voltage is 80% of the supply voltage.

문턱전압과 밀러플래토 전압을 통한 스위치 소자의 손실 분석 (Analysis of Switch Device Losses through Threshold Voltage and Miller Plateau Voltage)

  • 박세희;성호재;현승욱;원충연
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2017년도 추계학술대회
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    • pp.133-134
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    • 2017
  • This paper analyzes switch Device losses and efficiency depending on SiC and Si devices. The switch devices loss is compared to Si and SiC-based elements through Threshold Voltage and Miller Platequ Voltage. And analyzed through comparison of each switching loss by experiment.

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버퍼 관리 기법을 이용한 개선된 ERICA 스위치 알고리즘 (Enhanced ERICA Switch Algorithm using Buffer Management Scheme)

  • 양기원;오창석
    • 한국콘텐츠학회논문지
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    • 제2권2호
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    • pp.73-84
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    • 2002
  • 이 논문에서는 큐의 점유량을 줄이고 링크 효율성과 공평성을 제공하며 버퍼관리기법을 사용하는 뛰어난 ERICA 스위치 알고리즘을 제안한다. 제안된 버퍼관리기법은 서로 다른 3개의 하위 임계치, 폭주 통보 임계치, 상위 임계치인 버퍼 임계치를 가지고 있다. 각각의 버퍼 임계치는 상황에 따라 송신원에게 임의 폭주 상태를 다르게 보고한다. 따라서, 송신원은 보다 빠르게 망의 폭주 상태를 알 수 있고 폭주로부터 빨리 회복할 수 있다. 실험 결과들에 따라, 제안된 알고리즘은 기존의 ERICA보다 효율적으로 보여 주고 있다. 특히, 제안된 스위치 알고리즘은 큐의 점유량도 줄이고 공평성 유지를 최적화하여 폭주제안 기법을 제공한다.

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Threshold-based Filtering Buffer Management Scheme in a Shared Buffer Packet Switch

  • Yang, Jui-Pin;Liang, Ming-Cheng;Chu, Yuan-Sun
    • Journal of Communications and Networks
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    • 제5권1호
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    • pp.82-89
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    • 2003
  • In this paper, an efficient threshold-based filtering (TF) buffer management scheme is proposed. The TF is capable of minimizing the overall loss performance and improving the fairness of buffer usage in a shared buffer packet switch. The TF consists of two mechanisms. One mechanism is to classify the output ports as sctive or inactive by comparing their queue lengths with a dedicated buffer allocation factor. The other mechanism is to filter the arrival packets of inactive output ports when the total queue length exceeds a threshold value. A theoretical queuing model of TF is formulated and resolved for the overall packet loss probability. Computer simulations are used to compare the overall loss performance of TF, dynamic threshold (DT), static threshold (ST) and pushout (PO). We find that TF scheme is more robust against dynamic traffic variations than DT and ST. Also, although the over-all loss performance between TF and PO are close to each other, the implementation of TF is much simpler than the PO.

Formation of Threshold Switching Chalcogenide for Phase Change Switch Applications

  • Bang, Ki Su;Lee, Seung-Yun
    • Applied Science and Convergence Technology
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    • 제23권1호
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    • pp.34-39
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    • 2014
  • The programmable switches which control the delivery of electrical signals in programmable logic devices are fabricated using memory technology. Although phase change memory (PCM) technology is one of the most promising candidates for the manufacturing of the programmable switches, the threshold switching material should be added to a PCM cell for realization of the programmable switches based on PCM technology. In this work, we report the impurity-doped $Ge_2Sb_2Te_5$ (GST) chalcogenide alloy exhibiting threshold switching property. Unlike the GST thin film, the doped GST thin film prepared by the incorporation of In and P into GST is not crystallized even at the postannealing temperature higher than $200^{\circ}C$. This specific crystallization behavior in the doped GST thin film is attributed to the stabilization of the amorphous phase of GST by In and P doping.

추진기관 점화안전장치에 적용 가능한 MEMS 관성 스위치 연구 (Studies on MEMS Inertial Switch Applicable to the Ignition SAU(Safe-Arm-Unit) of Propulsion System)

  • 장승교;정형균
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2010년도 제35회 추계학술대회논문집
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    • pp.126-129
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    • 2010
  • 추진기관용 점화안전장치인 SAU에 적용 가능한 MEMS 관성 스위치를 고안하였다. 본 MEMS 관성 스위치는 일반적인 기계요소 설계 방식을 따라 설계하였으나 일반적인 MEMS 가속계와 다르게 목넘김 관성 스위칭 방식을 채택하여 일정 가속도 이상에서만 스위칭이 일어난다. 제작된 시료에 대한 검사 결과와 설계 데이터를 비교해 본 결과 관성 스위치의 구성 요소인 판 스프링 및 연성 힌지의 비선형요소에 의한 영향으로 인하여 설계된 스위칭 가속도 값과 근사한 차이가 유발됨을 확인하였다.

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다중 VBR 소스를 갖는 TCP over UBR-EPD의 특성 (The Behavior of TCP over UBR-EPD with multiple VBR source)

  • 이진우;김진태;유영길
    • 전자공학회논문지T
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    • 제36T권4호
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    • pp.82-87
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    • 1999
  • The Asynchronous Transfer Mode(ATM) networks are being adopted as backbones over various parts of Internet. TCP is one of the most widespread transport protocols and can be used with ATM. But, TCP shows poor end-to-end performance on ATM networks. Effective throughput of TCP over ATM can be quite low when cells are dropped at the congested ATM switch. As congested link transmits cells from corrupted packets, it wastes bandwidth and throughput becomes low. This paper examines the behavior of TCP over ATM-UBR using EPD switch in a broadband environment. As threshold value closes to the buffer size, the buffer can be used more efficiently, but more drops and retransmission occur. If the threshold value is much less than buffer size, efficiency becomes low, but few drops can be happen. Therefore, the decision of threshold value becomes important factor.

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반응성 질소와 플라즈마 처리에 의한 문턱 스위칭 소자의 개선 (Improved Distribution of Threshold Switching Device by Reactive Nitrogen and Plasma Treatment)

  • 김동식
    • 전자공학회논문지
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    • 제51권8호
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    • pp.172-177
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    • 2014
  • 두 가지 $N_2$ 프로세스(성장 중 반응성 질소 그리고 질소 플라즈마 경화)에 의해 특별히 개선된 AsGeTeS 위에 만들어진 문턱 스위칭 소자를 제시하고자 한다. 적층과 열적 안정적인 소자 구조가 가능한 두 스텝 프로세스에서의 질소의 사용은 나노급 배열 회로의 응용에서의 스위치와 메모리 소자의 집적을 가능하게 한다. 이것의 좋은 문턱 스위칭 특성에도 불구하고 AsTeGeSi 기반의 스위치는 높은 온도에서의 신뢰성 있는 저항 메모리 적용에 중요한 요소를 가진다. 이것은 보통 Te의 농도 변화에 기인한다. 그러나 chalconitride 스위치(AsTeGeSiN)은 $30{\times}30(nm^2)$ 셀에서 $1.1{\times}10^7A/cm^2$가 넘는 높은 전류 농도를 갖는 높은 온도 안정성을 보여준다. 스위치의 반복 능력은 $10^8$번을 넘어선다. 더하여 AsTeGeSiN 선택 소자를 가진 TaOx 저항성 메모리를 사용한 1 스위치-1저항으로 구성된 메모리 셀을 시연하였다.

ATM 스위치에서 폐기 임계치를 가진 셀전송비율 제어형 우선순위 제어방식의 성능 분석 (Performance analysis of priority control mechanism with cell transfer ratio and discard threshold in ATM switch)

  • 박원기;김영선;최형진
    • 한국통신학회논문지
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    • 제21권3호
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    • pp.629-642
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    • 1996
  • ATM switch handles the traffic for a wide range of appliations with different QOS(Quality-of-Service) requirements. In ATM switch, the priority control mechanism is needed to improve effectively the required QOS requirements. In this paper, we propose a priority control mechanism using the cell transfer ratio type and discard threshold in order to archive the cell loss probability requirement and the delay requirement of each service class. The service classes of our concern are the service class with high time priority(class 1) and the service class with high loss priority control mechanism, cells for two kind of service classes are stored and processed within one buffer. In case cells are stored in the buffer, cells for class 2 are allocated in the stored and processed within one buffer. In case cells are stored in the buffer, cells for class 2 are allocated in the shole range of the buffer and cells for class 1 are allocated up to discard threshold of the buffer. In case cells in the buffer are transmitted, one cell for class 1 is transmitted whenever the maximum K cells for class 2 are transmitted consecutively. We analyze the time delay and the loss probability for each class of traffic using Markov chain. The results show that the characteristics of the mean cell delay about cells for class 1 becomes better and that of the cell loss probability about cells for class 2 becomes better by selecting properly discard threshold of the buffer and the cell transfer ratio according to the condition of input traffic.

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다결정실리콘 표면 미세가공 기술을 이용한 초소형 기계식 스위치의 설계 및 제작 (Design and fabrication of a Micromechanical Switch Using Polysilicon Surface Micromachining)

  • 채경수;한승오;하종민;문성욱;박정호
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권9호
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    • pp.546-551
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    • 2000
  • A micromechanical switch that can be used as a logic gate is described in this paper. This switch consists of fixed input electrodes an output electrode Vcc/GND electrodes and movable plates suspended by crab-leg flexures. for mechanical switching of an electrical signal a parallel plate actuator which comes in contact with output electrode was used. Provided that movable plates are connected to Vcc and a low input voltage(ground signal) is applied to the fixed input electrodes the movable plates are pulled by an electrostatic force between the fixed input electrodes and the movable plates. the proposed micromechanical switch was fabricated by surface micromachining technology with$2\mum$ -thick poly-Si and the measured threshold voltage for ON/OFF switching was 23.5V.

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