• Title/Summary/Keyword: Threshold switch

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Capacitive Touch Switch Regardless of Operating Frequency Using a Switched-Capacitor (스위치드 커패시터를 이용한 동작 주파수에 무관한 정전용량 터치스위치)

  • Lee, Mu-Jin;Seong, Kwang-Su
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.27 no.6
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    • pp.88-94
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    • 2013
  • This paper proposes a capacitive touch switch using a switched-capacitor. The proposed method charges capacitance for measurement using the switched-capacitor until the voltage across the capacitance reaches a threshold voltage. As the proposed method uses the number of times being charged to measure the capacitance, the method has no relation with the operating frequency of the switched-capacitor. This paper also shows the quantization resolution of the proposed method is related to the capacitance in the switched-capacitor and the threshold voltage, i.e., the resolution is improved when the capacitance in the switched-capacitor is decreased and the threshold voltage is increased. Simulation result shows the method gives 31fF quantization resolution when the capacitance in the switched-capacitor is 50fF and threshold voltage is 80% of the supply voltage.

Analysis of Switch Device Losses through Threshold Voltage and Miller Plateau Voltage (문턱전압과 밀러플래토 전압을 통한 스위치 소자의 손실 분석)

  • Park, Sae Hee;Seong, Ho-Jae;Hyun, Seung-Wook;Won, Chung-Yuen
    • Proceedings of the KIPE Conference
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    • 2017.11a
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    • pp.133-134
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    • 2017
  • This paper analyzes switch Device losses and efficiency depending on SiC and Si devices. The switch devices loss is compared to Si and SiC-based elements through Threshold Voltage and Miller Platequ Voltage. And analyzed through comparison of each switching loss by experiment.

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Enhanced ERICA Switch Algorithm using Buffer Management Scheme (버퍼 관리 기법을 이용한 개선된 ERICA 스위치 알고리즘)

  • 양기원;오창석
    • The Journal of the Korea Contents Association
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    • v.2 no.2
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    • pp.73-84
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    • 2002
  • In this paper, we propose a enhanced ERICA switch algorithm using the buffer management scheme which can reduce the queue length, support the efficiency link utilization and the fair share. It has three different buffer thresholds which are low threshold, congestion notification threshold and high threshold. According to the each buffer threshold status, switch announced congestion notification to the source differently. So, sources could know the congestion more quickly and fast remover from network congestion. As a experimental results, it is proved that proposed algorithm is the more efficient than ERICA. Especially, proposed switch algorithm provides congestion control mechanism to make the best use of with keeping fairness and reduce queue length.

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Threshold-based Filtering Buffer Management Scheme in a Shared Buffer Packet Switch

  • Yang, Jui-Pin;Liang, Ming-Cheng;Chu, Yuan-Sun
    • Journal of Communications and Networks
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    • v.5 no.1
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    • pp.82-89
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    • 2003
  • In this paper, an efficient threshold-based filtering (TF) buffer management scheme is proposed. The TF is capable of minimizing the overall loss performance and improving the fairness of buffer usage in a shared buffer packet switch. The TF consists of two mechanisms. One mechanism is to classify the output ports as sctive or inactive by comparing their queue lengths with a dedicated buffer allocation factor. The other mechanism is to filter the arrival packets of inactive output ports when the total queue length exceeds a threshold value. A theoretical queuing model of TF is formulated and resolved for the overall packet loss probability. Computer simulations are used to compare the overall loss performance of TF, dynamic threshold (DT), static threshold (ST) and pushout (PO). We find that TF scheme is more robust against dynamic traffic variations than DT and ST. Also, although the over-all loss performance between TF and PO are close to each other, the implementation of TF is much simpler than the PO.

Formation of Threshold Switching Chalcogenide for Phase Change Switch Applications

  • Bang, Ki Su;Lee, Seung-Yun
    • Applied Science and Convergence Technology
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    • v.23 no.1
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    • pp.34-39
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    • 2014
  • The programmable switches which control the delivery of electrical signals in programmable logic devices are fabricated using memory technology. Although phase change memory (PCM) technology is one of the most promising candidates for the manufacturing of the programmable switches, the threshold switching material should be added to a PCM cell for realization of the programmable switches based on PCM technology. In this work, we report the impurity-doped $Ge_2Sb_2Te_5$ (GST) chalcogenide alloy exhibiting threshold switching property. Unlike the GST thin film, the doped GST thin film prepared by the incorporation of In and P into GST is not crystallized even at the postannealing temperature higher than $200^{\circ}C$. This specific crystallization behavior in the doped GST thin film is attributed to the stabilization of the amorphous phase of GST by In and P doping.

Studies on MEMS Inertial Switch Applicable to the Ignition SAU(Safe-Arm-Unit) of Propulsion System (추진기관 점화안전장치에 적용 가능한 MEMS 관성 스위치 연구)

  • Jang, Seung-Gyo;Jung, Hyung-Gyun
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2010.11a
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    • pp.126-129
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    • 2010
  • MEMS(micro electro-mechanical systems) inertial switch which is applicable to the ignition Safe-Arm- Unit of propulsion system is devised. The MEMS inertial switch is designed according to the general design procedure for conventional mechanical elements. Unlikely conventional MEMS accelerometer, threshold inertial switching mechanism is adopted which makes a MEMS element an abrupt switching in a certain acceleration level. By comparing the design data and test results of the specimen a small discrepancy in switching acceleration level is found which is presumably due to the nonlinear characteristics of the beam spring and the flexure hinge which are the main parts of the MEMS inertial switch.

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The Behavior of TCP over UBR-EPD with multiple VBR source (다중 VBR 소스를 갖는 TCP over UBR-EPD의 특성)

  • Lee, Jin-Woo;Kim, Jin-Tae;Yoo, Young-Kil
    • Journal of the Korean Institute of Telematics and Electronics T
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    • v.36T no.4
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    • pp.82-87
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    • 1999
  • The Asynchronous Transfer Mode(ATM) networks are being adopted as backbones over various parts of Internet. TCP is one of the most widespread transport protocols and can be used with ATM. But, TCP shows poor end-to-end performance on ATM networks. Effective throughput of TCP over ATM can be quite low when cells are dropped at the congested ATM switch. As congested link transmits cells from corrupted packets, it wastes bandwidth and throughput becomes low. This paper examines the behavior of TCP over ATM-UBR using EPD switch in a broadband environment. As threshold value closes to the buffer size, the buffer can be used more efficiently, but more drops and retransmission occur. If the threshold value is much less than buffer size, efficiency becomes low, but few drops can be happen. Therefore, the decision of threshold value becomes important factor.

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Improved Distribution of Threshold Switching Device by Reactive Nitrogen and Plasma Treatment (반응성 질소와 플라즈마 처리에 의한 문턱 스위칭 소자의 개선)

  • Kim, DongSik
    • Journal of the Institute of Electronics and Information Engineers
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    • v.51 no.8
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    • pp.172-177
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    • 2014
  • We present on a threshold switching device based on AsGeTeSi material which is significantly improved by two $N_2$ processes: reactive $N_2$ during deposition, and $N_2$ plasma hardening. The introduction of N2 in the two-step processing enables a stackable and thermally stable device structure, is allowing integration of switch and memory devices for application in nano scale array circuits. Despite of its good threshold switching characteristics, AsTeGeSi-based switches have had key issues with reliability at a high temperature to apply resistive memory. This is usually due to a change in a Te concentration. However, our chalconitride switches(AsTeGeSiN) show high temperature stability as well as high current density over $1.1{\times}10^7A/cm^2$ at $30{\times}30(nm^2)$ celll. A cycling performance of the switch was over $10^8$ times. In addition, we demonstrated a memory cell consisted of 1 switch-1 resistor (1S-1R) stack structure using a TaOx resistance memory with the AsTeGeSiN select device.

Performance analysis of priority control mechanism with cell transfer ratio and discard threshold in ATM switch (ATM 스위치에서 폐기 임계치를 가진 셀전송비율 제어형 우선순위 제어방식의 성능 분석)

  • 박원기;김영선;최형진
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.21 no.3
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    • pp.629-642
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    • 1996
  • ATM switch handles the traffic for a wide range of appliations with different QOS(Quality-of-Service) requirements. In ATM switch, the priority control mechanism is needed to improve effectively the required QOS requirements. In this paper, we propose a priority control mechanism using the cell transfer ratio type and discard threshold in order to archive the cell loss probability requirement and the delay requirement of each service class. The service classes of our concern are the service class with high time priority(class 1) and the service class with high loss priority control mechanism, cells for two kind of service classes are stored and processed within one buffer. In case cells are stored in the buffer, cells for class 2 are allocated in the stored and processed within one buffer. In case cells are stored in the buffer, cells for class 2 are allocated in the shole range of the buffer and cells for class 1 are allocated up to discard threshold of the buffer. In case cells in the buffer are transmitted, one cell for class 1 is transmitted whenever the maximum K cells for class 2 are transmitted consecutively. We analyze the time delay and the loss probability for each class of traffic using Markov chain. The results show that the characteristics of the mean cell delay about cells for class 1 becomes better and that of the cell loss probability about cells for class 2 becomes better by selecting properly discard threshold of the buffer and the cell transfer ratio according to the condition of input traffic.

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Design and fabrication of a Micromechanical Switch Using Polysilicon Surface Micromachining (다결정실리콘 표면 미세가공 기술을 이용한 초소형 기계식 스위치의 설계 및 제작)

  • Chae, Gyeong-Su;Han, Seung-O;Ha, Jong-Min;Mun, Seong-Uk;Park, Jeong-Ho
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.9
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    • pp.546-551
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    • 2000
  • A micromechanical switch that can be used as a logic gate is described in this paper. This switch consists of fixed input electrodes an output electrode Vcc/GND electrodes and movable plates suspended by crab-leg flexures. for mechanical switching of an electrical signal a parallel plate actuator which comes in contact with output electrode was used. Provided that movable plates are connected to Vcc and a low input voltage(ground signal) is applied to the fixed input electrodes the movable plates are pulled by an electrostatic force between the fixed input electrodes and the movable plates. the proposed micromechanical switch was fabricated by surface micromachining technology with$2\mum$ -thick poly-Si and the measured threshold voltage for ON/OFF switching was 23.5V.

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