• Title/Summary/Keyword: Threshold adjustment

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Robust Object Tracking based on Weight Control in Particle Swarm Optimization (파티클 스웜 최적화에서의 가중치 조절에 기반한 강인한 객체 추적 알고리즘)

  • Kang, Kyuchang;Bae, Changseok;Chung, Yuk Ying
    • The Journal of Korean Institute of Next Generation Computing
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    • v.14 no.6
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    • pp.15-29
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    • 2018
  • This paper proposes an enhanced object tracking algorithm to compensate the lack of temporal information in existing particle swarm optimization based object trackers using the trajectory of the target object. The proposed scheme also enables the tracking and documentation of the location of an online updated set of distractions. Based on the trajectories information and the distraction set, a rule based approach with adaptive parameters is utilized for occlusion detection and determination of the target position. Compare to existing algorithms, the proposed approach provides more comprehensive use of available information and does not require manual adjustment of threshold values. Moreover, an effective weight adjustment function is proposed to alleviate the diversity loss and pre-mature convergence problem in particle swarm optimization. The proposed weight function ensures particles to search thoroughly in the frame before convergence to an optimum solution. In the existence of multiple objects with similar feature composition, this algorithm is tested to significantly reduce convergence to nearby distractions compared to the other existing swarm intelligence based object trackers.

A study on determining threshold level of precipitation for drought management in the dam basin (댐 유역 가뭄 관리를 위한 강수량 임계수준 결정에 관한 연구)

  • Lee, Kyoung Do;Son, Kyung Hwan;Lee, Byong Ju
    • Journal of Korea Water Resources Association
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    • v.53 no.4
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    • pp.293-301
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    • 2020
  • This study determined appropriate threshold level (cumulative period and percentage) of precipitation for drought management in dam basin. The 5 dam basins were selected, the daily dam storage level and daily precipitation data were collected. MAP (Mean Areal Precipitation was calculated by using Thiessen polygon method, and MAP were converted to accumulated values for 6 cumulative periods (30-, 60-, 90-, 180-, 270-, and 360-day). The correlation coefficient and ratio of variation coefficient between storage level and MAP for 6 cumulative periods were used to determine the appropriate cumulative period. Correlation of cumulative precipitation below 90-day was low, and that of 270-day was high. Correlation was high when the past precipitation during the flood period was included within the cumulative period. The ratio of variation coefficient was higher for the shorter cumulative period and lower for the longer in all dam, and that of 270-day precipitation was closed to 1.0 in every month. ROC (Receiver Operating Characteristics) analysis with TLWSA (Threshold Line of Water Supply Adjustment) was used to determine the percentage of precipitation shortages. It is showed that the percentage of 270-day cumulative precipitation on Boryung dam and other 4-dam were less than 90% and 80% as threshold level respectively, when the storage was below the attention level. The relationship between storage and percentage of dam outflow and precipitation were analyzed to evaluate the impact of artificial dam operations on drought analysis, and the magnitude of dam outflow caused uncertainty in the analysis between precipitation and storage data. It is concluded that threshold level should be considered for dam drought analysis using based on precipitation.

Supperession of Short Channel Effects in 0.1$\mu\textrm{m}$ nMOSFETs with ISRC Structure (짧은 채널 효과의 억제를 위한 ISRC (Inverted-Sidewall Recessed-Channel)구조를 갖는 0.1$\mu\textrm{m}$ nMOSFET의 특성)

  • 류정호;박병국;전국진;이종덕
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.8
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    • pp.35-40
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    • 1997
  • To suppress the short channel effects in nMOSFET with 0.1.mu.m channel length, we have fabricated and characterized the ISRC n MOSFET with several process condition. When the recess oxide thickness is 100nm and the channel dose for threshold voltge adjustment is 6*10$^{12}$ /c $m^{-2}$ , B $F_{2}$$^{+}$, the maximum transconductance at $V_{DS}$ =2.0V is 455mS/mm and the BIDL is kept within 67mV. By comparing the ISRC n MOSFET with the conventioanl SHDD (shallowly heavily dopped drain) nMOSFET, we verify the suppression of short channel effects ISRC structure.e.

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A Resetting Scheme for Process Parameters using the Mahalanobis-Taguchi System

  • Park, Chang-Soon
    • The Korean Journal of Applied Statistics
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    • v.25 no.4
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    • pp.589-603
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    • 2012
  • Mahalanobis-Taguchi system(MTS) is a statistical tool for classifying the normal group and abnormal group in multivariate data structures. In addition to the classification itself, the MTS uses a method for selecting variables useful for the classification. This method can be used efficiently especially when the abnormal group data are scattered without a specific directionality. When the feedback adjustment procedure through the measurements of the process output for controlling process input variables is not practically possible, the reset procedure can be an alternative one. This article proposes a reset procedure using the MTS. Moreover, a method for identifying input variables to reset is also proposed by the use of the contribution. The identification of the root-cause parameters using the existing dimension-reduced contribution tends to be difficult due to the variety of correlation relationships of multivariate data structures. However, it became possible to provide an improved decision when used together with the location-centered contribution and the individual-parameter contribution.

C-V Characteristics of The MOS Devices by Using different Gate Metals (게이트 금속 변화에 의한 MOS 소자의 C-V 특성)

  • 최현식;서용진;유석빈;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1988.10a
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    • pp.95-97
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    • 1988
  • The instability of MOS devices is mainly caused by the oxide charges, and as the need to develop the gate metal grows researches for various new metal gate have been performed, and in these researches, the difference work function existing between the metal and the semiconductor should be considered. Here int his paper, the device is made by the sputtering and the LPCVD method using pure Al, compound metal. poly-si, as a gate metal, the result of the research was shown that the work function difference from using different gate metals effects on the flatband voltage shift. This means we can infer that the threshold voltage adjustment is possible by using different gate metals and this whole mechanism makes the devices behavior more stable.

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Large Solvent and Noise Peak Suppression by Combined SVD-Harr Wavelet Transform

  • Kim, Dae-Sung;Kim, Dai-Gyoung;Lee, Yong-Woo;Won, Ho-Shik
    • Bulletin of the Korean Chemical Society
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    • v.24 no.7
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    • pp.971-974
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    • 2003
  • By utilizing singular value decomposition (SVD) and shift averaged Harr wavelet transform (WT) with a set of Daubechies wavelet coefficients (1/2, -1/2), a method that can simultaneously eliminate an unwanted large solvent peak and noise peaks from NMR data has been developed. Noise elimination was accomplished by shift-averaging the time domain NMR data after a large solvent peak was suppressed by SVD. The algorithms took advantage of the WT, giving excellent results for the noise elimination in the Gaussian type NMR spectral lines of NMR data pretreated with SVD, providing superb results in the adjustment of phase and magnitude of the spectrum. SVD and shift averaged Haar wavelet methods were quantitatively evaluated in terms of threshold values and signal to noise (S/N) ratio values.

Development of Methods to lmprove the Reliability of ELECTRE (복합기준 평가방법 ELECTRE의 신뢰도 증진을 위한 방안 연구)

  • 이인성
    • Journal of the Korean Institute of Landscape Architecture
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    • v.23 no.1
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    • pp.23-38
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    • 1995
  • ELEECTRE is a less demanding and potentially Bffective multiattribute evaluation method for pre-editing proeedure. The method, however, was developed based on probabilistic mathematicsand its reliability has never'been emprieally tested. This article examined the reliability of ELECTRo under various conditions of linear and non-linear utility func- tions using a Monte-Carlo shnulation, and found the method eausea a considerably high rate of error. To enhance the reliability of ELECTRE, two ways of modi(ication - adjust- ment of threshold values of concordance and discordance matrices, and adjustment of the required nunlber of probably-dominant alternatives to eliminate a probably-dominated alternative - were suggested, and their effctiveness was also tesed by a Monte-Carlo simulation. The simulation result chows that these modifications cponsiderably improve the reliability of ELECTRE, and yet maintain a reasonably high level of efficiency. Through these modifications, ELECTRE can be used as an efficient and feliable pre-editing method. Ways to implement ELECTRE in the construction of plainning decision support systens were discussed. The impli(els combination of this method and other multiattribute evaluation methods will help to create more effective decision suport systems.

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Analysis of CIELuv Color feature for the Segmentation of the Lip Region (입술영역 분할을 위한 CIELuv 칼라 특징 분석)

  • Kim, Jeong Yeop
    • Journal of Korea Multimedia Society
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    • v.22 no.1
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    • pp.27-34
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    • 2019
  • In this paper, a new type of lip feature is proposed as distance metric in CIELUV color system. The performance of the proposed feature was tested on face image database, Helen dataset from University of Illinois. The test processes consists of three steps. The first step is feature extraction and second step is principal component analysis for the optimal projection of a feature vector. The final step is Otsu's threshold for a two-class problem. The performance of the proposed feature was better than conventional features. Performance metrics for the evaluation are OverLap and Segmentation Error. Best performance for the proposed feature was OverLap of 65% and 59 % of segmentation error. Conventional methods shows 80~95% for OverLap and 5~15% of segmentation error usually. In conventional cases, the face database is well calibrated and adjusted with the same background and illumination for the scene. The Helen dataset used in this paper is not calibrated or adjusted at all. These images are gathered from internet and therefore, there are no calibration and adjustment.

Wide-range Lecturing Microphone System using Multiple Range Sensor (다중 거리 센서를 사용한 강의용 광역 마이크 시스템)

  • Oh, Woojin
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.26 no.5
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    • pp.808-811
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    • 2022
  • In this paper, a wide-range microphone system for lectures using dual 3D sensors is proposed. A previous work using a single sensor had lowering the detecting threshold to support wide-area. However it was found that an error occurred when lecturer wears clothes with low reflectivity or has small body size. When multiple sensors are used to expand the coverage it could be cause various problems. Each sensor could show different distance to the same target. We derive the rotation angle and and compensate for lecturing microphone system using sensors on the line. The proposed method shows a little improvement in performance by about 1dB compared to the previous works but the performance is uniform in all areas regardless of reflectivity.

Effects of Vth adjustment ion implantation on Switching Characteristics of MCT(MOS Controlled Thyristor) (문턱전압 조절 이온주입에 따른 MCT (MOS Controlled Thyristor)의 스위칭 특성 연구)

  • Park, Kun-Sik;Cho, Doohyung;Won, Jong-Il;Kwak, Changsub
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.5
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    • pp.69-76
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    • 2016
  • Current driving capability of MCT (MOS Controlled Thyristor) is determined by turn-off capability of conducting current, that is off-FET performance of MCT. On the other hand, having a good turn-on characteristics, including high peak anode current ($I_{peak}$) and rate of change of current (di/dt), is essential for pulsed power system which is one of major application field of MCTs. To satisfy above two requirements, careful control of on/off-FET performance is required. However, triple diffusion and several oxidation processes change surface doping profile and make it hard to control threshold voltage ($V_{th}$) of on/off-FET. In this paper, we have demonstrated the effect of $V_{th}$ adjustment ion implantation on the performance of MCT. The fabricated MCTs (active area = $0.465mm^2$) show forward voltage drop ($V_F$) of 1.25 V at $100A/cm^2$ and Ipeak of 290 A and di/dt of $5.8kA/{\mu}s$ at $V_A=800V$. While these characteristics are unaltered by $V_{th}$ adjustment ion implantation, the turn-off gate voltage is reduced from -3.5 V to -1.6 V for conducting current of $100A/cm^2$ when the $V_{th}$ adjustment ion implantation is carried out. This demonstrates that the current driving capability is enhanced without degradation of forward conduction and turn-on switching characteristics.