• Title/Summary/Keyword: Three-Dimensional Electrodes

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Resistivity Tomography in an Inclined Borehole to Surface Purvey Using a Pole-dipole Array (단극-쌍극자 배열을 이용한 경사시추공-지표 탐사에서 전기비저항 토모그래피)

  • Park Jong-Oh;Kim Hee-Joon;Park Chung-Hwa
    • The Journal of Engineering Geology
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    • v.16 no.3 s.49
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    • pp.255-263
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    • 2006
  • In an electrical tomographic survey using an inclined borehole with a pole-dipole array, we must consider several factors: a singular point associated with zero potential difference, a spatial discrepancy between electrode and nodal point in a model due to a inclined borehole, and a variation of geometric factors in connection with a irregular topography. Singular points which are represented by the normal distance from current source to the ground surface can be represented by serveral regions due to a irregular topography of ground surface. The method of element division can be applied to the region in which the borehole is curved, inclined or the distance between the electrodes is shorter than that of nodal points, because the coordinate of each electrode cannot be assigned directly to the nodal point if several electrodes are in an element. Test on a three-dimensional (3-D) synthetic model produces good images of conductive target and shoves stable convergence.

Delineation of a fault zone beneath a riverbed by an electrical resistivity survey using a floating streamer cable (스트리머 전기비저항 탐사에 의한 하저 단층 탐지)

  • Kwon Hyoung-Seok;Kim Jung-Ho;Ahn Hee-Yoon;Yoon Jin-Sung;Kim Ki-Seog;Jung Chi-Kwang;Lee Seung-Bok;Uchida Toshihiro
    • Geophysics and Geophysical Exploration
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    • v.8 no.1
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    • pp.50-58
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    • 2005
  • Recently, the imaging of geological structures beneath water-covered areas has been in great demand because of numerous tunnel and bridge construction projects on river or lake sites. An electrical resistivity survey can be effective in such a situation because it provides a subsurface image of faults or weak zones beneath the water layer. Even though conventional resistivity surveys in water-covered areas, in which electrodes are installed on the water bottom, do give high-resolution subsurface images, much time and effort is required to install electrodes. Therefore, an easier and more convenient method is sought to find the strike direction of the main zones of weakness, especially for reconnaissance surveys. In this paper, we investigate the applicability of the streamer resistivity survey method, which uses electrodes in a streamer cable towed by ship or boat, for delineating a fault zone. We do this through numerical experiments with models of water-covered areas. We demonstrate that the fault zone can be imaged, not only by installing electrodes on the water bottom, but also by using floating electrodes, when the depth of water is less than twice the electrode spacing. In addition, we compare the signal-to-noise ratio and resolving power of four kinds of electrode arrays that can be adapted to the streamer resistivity method. Following this numerical study, we carried out both conventional and streamer resistivity surveys for the planned tunnel construction site located at the Han River in Seoul, Korea. To obtain high-resolution resistivity images we used the conventional method, and installed electrodes on the water bottom along the planned route of the tunnel beneath the river. Applying a two-dimensional inversion scheme to the measured data, we found three distinctive low-resistivity anomalies, which we interpreted as associated with fault zones. To determine the strike direction of these three fault zones, we used the quick and convenient streamer resistivity.

Three-dimensional Imaging of Subsurface Structures by Resistivity Tomography (전기비저항 토모그래피에 의한 지하구조의 3차원 영상화)

  • Yi Myeong-Jong;Kim Jung-Ho;Chung Seung-Hwan;Suh Jung Hee
    • Geophysics and Geophysical Exploration
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    • v.5 no.4
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    • pp.236-249
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    • 2002
  • We have extended the three-dimensional (3-D) resistivity imaging algorithm to cover the 3-D resistivity tomography problem, where resistivity data are acquired using electrodes installed in several boreholes as well as at the earth surface. The imaging algorithm consists of the 3-D finite element forward modeling and least-squares inversion scheme, where the ACB (Active Constraint Balancing) is adopted to enhance the resolving power of the inversion. Sensitivity analysis with numerical verifications shows that 3-D resistivity tomography is a very appealing method and can be used to get 3-D attitude of subsurface structures with very high-resolution. Moreover, we could accurately handle the topography effect, which could cause artifacts in the resistivity tomography. In the application of 3-D resistivity tomography to the real field data set acquired at the quarry mine, we could derive a very reasonable and accurate image of the subsurface.

3차원 LTCC 기판을 이용한 압전 압력 센서의 제작 및 연구 특성

  • Heo, Won-Yeong;Hwang, Hyeon-Seok;U, Hyeong-Gwan;Lee, Tae-Yong;Lee, Gyeong-Cheon;Sim, Deung;Song, Jun-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.118-118
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    • 2009
  • Low temperature co-fired ceramic (LTCC) is one of promising materials for MEMS structures because it has very good electrical and mechanical properties as well as possibility of making various three dimensional (3D) structures. In this work, piezoelectric pressure sensors based on hybrid LTCC technology were presented. The LTCC diaphragms with thickness of 400 um were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The piezoelectric sensing layer consists of $Pb(ZrTi)O_3$ (PZT) thin film deposited by RF magnetron sputtering method on between top and bottom Au electrodes. The results showed that the fabrication method is very suitable for pressure sensor applications. The PZT films deposited on LTCC diaphragms were successfully grown and were analyzed by using X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM).

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Capacitance Swing and Capacitance Ratio of GaN-Based Metal-Semiconductor-Metal Two-Dimensional Electron Gas Varactor with Different Dielectric Films

  • Tien, Chu-Yeh;Kuei, Ping-Yu;Chang, Liann-Be;Hsu, Chien-Pin
    • Journal of Electrical Engineering and Technology
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    • v.10 no.4
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    • pp.1720-1725
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    • 2015
  • The performance of the AlGaN/GaN MSM-2DEG varactor with different dielectric films deposited by the E-beam deposition is investigated in detail. The capacitance swing and the capacitance ratio of the varactor without dielectric film as well as with, SiO2, Gd2O3, and Si3N4 films, respectively, are determined by electrodes of varying areas. The maximum capacitance, the minimum capacitance and the capacitance ratios are proportional to the increasing of the electrode areas. The capacitance ratio determined by the maximum and the minimum capacitance is found to be 18.35 (with Si3N4 dielectric film) and 149.51 (without dielectric film), respectively. The transition voltages of the fabricated varactors are almost the same for a bias voltage of about ±5 V and leakage current can be lower three orders of magnitude while the varactors with dielectric films. The tunability of the capacitance ratio makes the AlGaN/GaN MSM-2DEG varactor with a dielectric film highly useful in multirange applications of a surge free preamplier.

A Study on the Change of Electrical Characteristics in the EST(Emitter Switched Thyristor) with Trench Electrodes (EST(Emitter Switched Thyristor) 소자의 트랜치 전극에 의한 특성 변화 연구)

  • 김대원;성만영;강이구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.3
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    • pp.259-266
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    • 2004
  • In this paper. a new two types of EST(Emitter Switched Thyristor) structures are proposed to improve the electrical characteristics including the current saturation capability. Besides, the two dimensional numerical simulations were carried out using MEDICI to verify the validity of the device and examine the electrical characteristics. First, a vortical trench electrode EST device is proposed to improve snap-back effect and its blocking voltage. Second, a dual trench gate EST device is proposed to obtain high voltage current saturation characteristics and high blocking voltage and to eliminate snap-back effect. The two proposed devices have superior electrical characteristics when compared to conventional devices. In the vertical trench electrode EST, the snap-back effect is considerably improved by using the vertical trench gate and cathode electrode and the blocking voltage is one times better than that of the conventional EST. And in the dual trench gate EST, the snap-back effect is completely removed by using the series turn-on and turn-off MOSFET and the blocking voltage is one times better than that of the conventional EST. Especially current saturation capability is three times better than that of the other EST.

Development of a Virtual Frisch-Grid CZT Detector Based on the Array Structure

  • Kim, Younghak;Lee, Wonho
    • Journal of Radiation Protection and Research
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    • v.45 no.1
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    • pp.35-44
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    • 2020
  • Background: Cadmium zinc telluride (CZT) is a promising material because of a high detection efficiency, good energy resolution, and operability at room temperature. However, the cost of CZT dramatically increases as its size increases. In this study, to achieve a large effective volume with relatively low cost, an array structure comprised of individual virtual Frisch-grid CZT detectors was proposed. Materials and Methods: The prototype consisted of 2 × 2 CZTs, a holder, anode and cathode printed circuit boards (PCBs), and an application-specific integrated circuit (ASIC). CZTs were used and the non-contacting shielding electrode method was applied for virtual Frisch-grid effect. An ASIC was used, and the holder and the PCBs were fabricated. In the current system, because the CZTs formed a common cathode, a total of 5 channels were assigned for data processing. Results and Discussion: An experiment using 137Cs at room temperature was conducted for 10 minutes. Energy and timing information was acquired and the depth of interaction was calculated by the timing difference between the signals of both electrodes. Based on obtained three-dimensional position information, the energy correction was carried out, and as a result the energy spectra showed the improvements. In addition, a Compton image was reconstructed using the iterative method. Conclusion: The virtual Frisch-grid CZT detector based on the array structure was developed and the energy spectra and the Compton image were successfully acquired.

LTCC 기판을 이용한 PZT 압력 센서의 제작 및 특성 연구

  • Heo, Won-Yeong;Hwang, Hyeon-Seok;Lee, Tae-Yong;Lee, Gyeong-Cheon;Song, Jun-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03b
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    • pp.13-13
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    • 2010
  • Piezoelectric sensors are extensively used to measure force because of their high sensitivity and low cost. however, the development of device with reduced size but with improved sensitivity is highly important. Low-temperature co-fired ceramic (LTCC) is one of promising materials for this application than a silicon substrate because it has very good electrical and mechanical properties as well as possibility of making various three dimensional (3D) structures. In this work, piezoelectric pressure sensors based on hybrid LTCC technology were presented. The LTCC diaphragms with thickness of $400\;{\mu}m$ were fabricated by laminating 12 green tapes which consist of alumina and glass particle in an organic binder. The piezoelectric sensing layer consists of PZT thin film deposited by RF magnetron sputtering method on between top and bottom Au electrodes. The PZT films deposited on LTCC diaphragms were successfully grown and were analyzed by using X-ray diffraction method (XRD) and field emission scanning electron microscope (FESEM).

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Experimental assessment of the piezoelectric transverse d15 shear sensing mechanism

  • Berik, Pelin;Benjeddou, Ayech;Krommer, Michael
    • Smart Structures and Systems
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    • v.13 no.4
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    • pp.567-585
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    • 2014
  • The piezoelectric transverse $d_{15}$ shear sensing mechanism is firstly assessed experimentally for a cantilever smart sandwich plate made of a piezoceramic axially poled patched core and glass fiber reinforced polymer composite faces. Different electrical connections are tested for the assessment of the sensor performance under a varying amplitude harmonic (at 24 Hz) force. Also, the dynamic response of the smart sandwich composite structure is monitored using different acquisition devices. The obtained experimentally sensed voltages are compared to those resulting from the benchmark three-dimensional piezoelectric coupled finite element simulations using a commercial code where realistic features, like equipotential conditions on the patches' electrodes and mechanical updating of the clamp, are considered. Numerically, it is found that the stiffness of the clamp, which is much softer than the ideal one, has an enormous influence on the sensed voltage of its adjacent patch; therefore, sensing with the patch on the free side would be more advantageous for a cantilever configuration. Apart from confirming the latter result, the plate benchmark experimental assessment showed that the parallel connection of its two oppositely poled patches has a moderate performance but better than the clamp side patch acting as an individual sensor.

Organic Thin-Film Transistors Fabricated on Flexible Substrate by Using Nanotransfer Molding

  • Hwang, Jae-Kwon;Dang, Jeong-Mi;Sung, Myung-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.287-287
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    • 2010
  • We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

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