• Journal of Adhesion and Interface
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• v.24 no.4
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• pp.113-119
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• 2023

Since it was reported that the unusual amino acid DOPA in synergy with lysine and histidine residues found in mussel adhesive proteins plays a pivotal role in mussel adhesion in underwater environments, there has been a burgeoning development of various catecholamines-based adhesives for biomedical applications. Among these, catechol-conjugated chitosan, containing catecholamine, featuring multiple catechol groups within its aminerich chitosan backbone, has found versatile utility in fields, such as tissue adhesion, wound dressing, tissue healing, hemostats, drug delivery systems, and tissue engineering scaffolds. Significantly, chitosan-catechol is a mussel-inspired material approved by both US Food and Drug Administration (FDA) and KR Ministry of Food and Drug Safety (MFDS) for its effectiveness in hemostasis. This review focuses on 1) general aspects of catechol-conjugated chitosan, highlighting catechol group integration into chitosan backbones, 2) examination of proposed mechanisms of hemostasis, and 3) exploration of diverse physical forms, including solution, hydrogels, patches, and thin films with practical applications inapplicable to hemostasis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.2
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• pp.61-65
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• 2024

HVPE (Hydride vapor phase epitaxy) is a method of manufacturing thin films or single crystals using gaseous raw materials. This is a method that applies the principles of chemical vapor deposition to grow a single crystal of a material with low meltability or high melting point, and is one of the methods that can obtain a gallium nitride (GaN) single crystal. Recently, much research has been conducted to grow aluminum nitride (AlN) single crystals using this method, but good results have not yet been obtained. In this study, we attempted to grow AlN single crystals using the HVPE method. Nitrogen was used as a carrier gas in the growth process, and the growth results according to changes in the amount of nitrogen (N₂) were examined. Changes in growth crystals as the amount of nitrogen increased were confirmed. The shape of the grown AlN single crystal was observed using an optical microscope, and the rocking curve was measured using double crystal X-ray diffractometry (DCXRD) to confirm the creation of the AlN crystal. The crystallinity of single crystals was also investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.4
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• pp.139-142
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• 2024

Along with the use of wide bandgap energy materials such as SiC and GaN in power semiconductors and the development trend of devices, many research results have been reported, including the success of research on AlN single crystals with higher energy gaps and the development of 2-inch single crystal wafers. However, AlN single crystals grown using chemical vapor deposition have been developed into thin films less than a few micrometers thick, but there are almost no results with thicknesses greater than that. Therefore, in this study, we attempted to grow by applying HVPE (Hydride vapor phase epitaxy), one of the chemical vapor deposition methods. The grown AlN single crystal was manufactured using self-designed equipment, and we attempted to establish the conditions for manufacturing AlN single crystals on sapphire wafer. We would like to characterize the growth behavior through an optical microscope observation.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.61-66
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• 2012

Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.328-336
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• 1997

The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are $600^{\circ}C$ and $430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150k to 293k by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(${\gamma}$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^{7}$, the MAPD of 335mW, and the rise and decay time of 10ms and 9.5ms, respectively.

• Journal of Korean Ophthalmic Optics Society
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• v.16 no.4
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• pp.357-362
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• 2011

Purpose: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer were fabricated, and their characteristics and structures were studied. Methods: the optical constants, n and k, of the $Ti_3O_5$ and $SiO_2$ thin films were obtained from the transmittances of their thin film. The narrow-band pass color-filters were designed with these optical constants and the AR coating of the filter was also designed. $Ti_3O_5/SiO_2$ multilayer filters were made by electron beam evaporation apparatus and the transmittaces of the filters were measured by spectrophotometer. the number of layers and the thicknesses of filters were calculated from the cross section of filters by SEM image and the composition of filters was analysed by XPS analysis. Results: The optimization of AR coating for the narrow-band pass color-filter was [air$|SiO_2(90)|Ti_3O_5(36)|SiO_2(5)|Ti_3O_5(73)|SiO_2(30)|Ti_3O_5(15)|$ glass], and the optimization of filter layer for the color filter was [air$|SiO_2(192)|Ti_3O_5(64)|SiO_2(102)|Ti_3O_5(66)|SiO_2(112)|Ti_3O_5(74)|SiO_2(120)|Ti_3O_5(68)|SiO_2(123)|Ti_3O_5(80)|SiO_2(109)|Ti_3O_5(70)|SiO_2(105)|Ti_3O_5(62)|SiO_2(99)|Ti_3O_5(63)|SiO_2(98)|Ti_3O_5(51)|SiO_2(60)|Ti_3O_5(42)|SiO_2(113)|Ti_3O_5(88)|SiO_2(116)|Ti_3O_5(68)|SiO_2(89)|Ti_3O_5(49)|SiO_2(77)|Ti_3O_5(48)|SiO_2(84)|Ti_3O_5(51)|SiO_2(85)|Ti_3O_5(48)|SiO_2(59)|Ti_3O_5(34)|SiO_2(71)|Ti_3O_5(44)|SiO_2(65)|Ti_3O_5(45)|SiO_2(81)|Ti_3O_5(52)|SiO_2(88)|$ glass]. It was known that the color-filters fabricated by the simulation data were composed of 41 layers by SEM image and the top layer of filters was $SiO_2$ layer and the filters were composed of $SiO_2$/$Ti_3O_5$ multilayer by XPS analysis. It was also known that the mixed thin film of TiO2 and $Ti_3O_5$ was made during the deposition of the $Ti_3O_5$ material. Conclusions: The narrow-band pass color-filters with a 500 nm central wavelength and 12 nm FWHM using $Ti_3O_5/SiO_2$ mutilayer of 41 layer were fabricated, and it was known that the mixed form of TiO2 and $Ti_3O_5$ thin film was made during the deposition of the $Ti_3O_5$ material.

• Polymer(Korea)
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• v.32 no.4
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• pp.372-376
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• 2008

Vacuum deposited 4,4',4"-tris(N-(2-naphthyl)-N-phenylamino)-triphenylamine (2-TNATA), used as a hole injection (HIL) material in OLEDs, is placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in the devices. C60-doped 2-TNATA:C60 (20 wt%) film was formed via co-evaporation process and molecular ordering and topology of 2-TNATA:C60 films were investigated using XRD and AFM. The J-V, L-V and current efficiency of multi-layered devices were characterized as well. Vacuum-deposited C60 film was molecularly oriented, but neither was 2-TNATA:C60 film due to the uniform dispersion of C60 molecules in the film. By using C60-doped 2-TNATA:C60 film as a HIL, the current density and luminance of a multi-layered ITO/2-TNATA:C60/NPD/$Alq_3$/LiF/Al device were significantly increased and the current efficiency of the device was increased from 4.7 to 6.7 cd/A in the present study.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.43-47
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• 2016

This paper covers the study on the properties of $TiO_2$ film deposited by atomic layer deposition (ALD) using TTIP and water at various temperatures including the low temperature range of <$150^{\circ}C$. At low deposition temperature, ALD $TiO_2$ films showed uniform growth rate per cycle ($0.3{\AA}/cycle$), good uniformity, smooth surface, and homogenous amorphicity. They also showed good conformality of >80% on the trench structure with the high aspect ratio of up to 75. However, relatively high concentration of impurities (C~4-7 at%) in the film was observed due to low deposition temperature.

• Korean Journal of Optics and Photonics
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• v.23 no.1
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• pp.12-16
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• 2012

In the paper, we fabricated a Ni master with $45^{\circ}$-mirror structures for flexible waveguide fabrication. The flexible waveguide films with embedded $45^{\circ}$-angled mirrors at the waveguide ends were successfully fabricated using a UV-imprint process. Next, in order to enhance the reflectivity of the mirrors, Ni(3 nm)-Au(200 nm) bilayers were evaporated on the $45^{\circ}$-angled facets through a locally opened thin mask using an electron beam evaporator. We measured propagation loss, bending loss, mirror loss and bending reliability of the fabricated waveguide.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.78.2-78.2
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• 2010

Cu(In,Ga)Se2 (CIGS)박막태양전지는 간단한구조와 가격경쟁력 및 고효율화 가능성에 대한 기대감에 의해 많은 연구가 수행되어오고 있다. 특히 높은 흡수계수와 적절한 밴드갭, 큰 결정크기와 같은 물질의 특성들이 장점으로 작용하고 있기 때문이다. 또한 CIGS박막태양전지는 다른 태양전지에 비해 광열화가 적다는 장점도 가지고 있다. CIGS 박막은 CuInSe2내의 In 사이트에 Ga을 도핑함으로서 형성이 되는데 그때의 밴드갭은 약 1.4eV이며 이를 형성하기 위해 많은 방법들이 제안되고 있는데, CIGS박막 형성 시 가장 중요시 여겨야 될 인자는 구성원소로부터 최적화된 조성비를 찾는 것이다. 이러한 관점에서 볼때 evaporation법이나 sputtering법같은 진공방식의 공정법이 비진공방식에 비해 최적의 조성비를 찾는 것이 수월할 것으로 생각된다. selenization을 하기전에, 동시증착이나 다층박막형성을 통해 Cu-In-Se의 조합이 일반적으로 이루어진다. 어떤방법이든 Se의 부가적인 공급이 이루어지는데 시작 전구체의 조합에서 그 해법을 제시하는 것에 대한 논의가 많이 부족한 현실로서, CuInSe2의 단일전구체에 의한 박막형성과 특성평가에 대해 구체적인 논의가 필요하다. 본 실험에서는 Cu-In-Se 전구체를 CuInSe2 단일 타겟에서부터 RF 마그네트론 스퍼터링법을 이용하여 박막증착을 하여 Se의 Rapid Thermal Process(RTA)법을 통해 Se이 순차적으로 공급되었다. 이때 형성되는 박막의 태양전지 흡수층 적용을 위한 광학적, 전기적 및 구조적에 대한 논의된다. Soda lime glass(SLG)와 Corning 1737 유리를 기판으로 하여 아세톤-에탄올을 이용, 초음파세척을 실시하였다. 스퍼터 공정을 하기전에 흡착된 물분자를 제거하기 위하여 약 30분간 $120^{\circ}C$로 열을 가해주었으며, 공정을 위한 총 아르곤 가스의 양은 약 50sccm이며 이때의 공정압력은 20mtorr로 고정하였다. 우선 RF power와 기판온도에 따른 단일전구체 형성을 관찰하기 위하여 각각 30~80W, RT~$400^{\circ}C$로 변화를 주어 박막을 형성한 후 모든 sample에 대하여 $500^{\circ}C$분위기에 effusion cell을 이용하여 Se 분위기에서 결정화를 실시하였다. 샘플의 두께는 Surface profiler로 측정하였고 단면은 전자주사현미경으로 관찰되었다. 동시에 SEM이미지를 통하여 morphology와 grain size 및 EDX를 통하여 조성분석을 하였다. 밴드갭, 투과율 및 흡수계수는 UV-VIS-NIR분광분석법을 통하여 수행되었으며, 전기적 특성분석을 위해 4-point-probe와 Hall effect측정을 수행하였다. 공정변수에 따른 단일타겟으로 얻어 결정화된 CuInSe2박막의 자세한 결과와 논의에 대하여 발표한다.