• Journal of Magnetics
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• v.12 no.1
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• pp.21-26
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• 2007

Si-based electromagnetic noise suppressors on coplanar waveguide transmission lines incorporated with a $SiO_2$ dielectric layer and a nanogranular Co-Fe-Al-O magnetic thin film are reported. Unlike glass-based devices, large signal attenuation is observed even in the bare structure without coating the magnetic thin film. Much larger signal attenuation is achieved in fully integrated devices. The transmission scattering parameter ($S_{21}$) is as small as -90 dB at 20 GHz at the following device dimensions; the thicknesses of the $SiO_2$ and Co-Fe-Al-O thin films are 0.1 $\mu$m and 1 $\mu$m, respectively, the length of the transmission line is 15 mm, and the width of the magnetic thin film is 2000 $\mu$m. In all cases, the reflection scattering parameter ($S_{11}$) is below -10 dB over the whole frequency band. Additional distributed capacitance formed by the Cu transmission line/$SiO_2$/Si substrate is responsible for these characteristics. It is considered that the present noise suppressors based on the Si substrate are a first important step to the realization of MMIC noise suppressors.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.74-78
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• 2006

A non-integrated type noise filter on a Coplanar Waveguide (CPW) transmission line is demonstrated by using a highly resistive $Co_{41}Fe_{38}Al_{13}O_8$ nanogranular thin film with the dimensions of $4\;mm (\iota)\times4\;mm(\omega)\times0.1\;{\mu}m(t)$. The noise suppression characteristics are evaluated without placing an insulating layer between the CPW line and the magnetic thin film. The insertion loss is very low being less than 0.3 dB and this low value is maintained up to 2 GHz. At a ferromagnetic resonance frequency of 3.3 GHz, the power loss is very large and the degree of noise attenuation is measured to be 3 dB. This level of noise attenuation is still small for real applications; however, considering the small magnetic volume used in this work, further improvement is expected by simply increasing the magnetic volume and by integrating the magnetic thin film into the CPW transmission line.

• Journal of Advanced Marine Engineering and Technology
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• v.39 no.1
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• pp.45-51
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• 2015

In this paper, we study the RF characteristics of the short wavelength thin-film transmission line employing microstrip line (ML)/coplanar waveguide (CPW) composite structure on silicon substrate for application to RFIC (radio frequency integrated circuit). The thin-film transmission line employing ML/CPW composite structure showed a wavelength shorter than conventional transmission lines. Concretely, at 10 GHz, the wavelength of the transmission line employing ML/CPW composite structure was 6.26 mm, which was 60.5 % of the conventional coplanar waveguide. We also extracted the bandwidth characteristic of the transmission line employing ML/CPW composite structure using equivalent circuit analysis. The S parameter of the equivalent circuit showed a good agreement with measured result. According to the bandwidth extraction result, the cut-off frequency of thin-film transmission line employing ML/CPW composite structure was 377 GHz. Above results indicate that the transmission line employing ML/CPW composite structure can be effectively used for application to broadband and compact RFIC.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.10-15
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• 2015

A thin-film transmission line (TFTL) employing a microstrip line/coplanar waveguide (ML/CPW) was fabricated on a silicon substrate for application to a miniaturized on-chip RF component, and the RF characteristics of the device with the proposed structure were investigated. The TFTL employing a ML/CPW composite structure exhibited a shorter wavelength than that of a conventional coplanar waveguide and that of a thin-film microstrip line. When the TFTL with the proposed structure was fabricated to have a length of ${\lambda}/8$, it showed a loss of less than 1.12 dB at up to 30 GHz. The improvement in the periodic capacitance of the TFTL caused for the propagation constant, ${\beta}$, and the effective permittivity, ${\varepsilon}_{eff}$, to have values higher than those of a device with only a conventional coplanar waveguide and a thin film microstrip line. The TFTL with the proposed structure showed a ${\beta}$ of 0.53~2.96 rad/mm and an ${\varepsilon}_{eff}$ of 22.3~25.3 when operating from 5 to 30 GHz. A highly miniaturized impedance transformer was fabricated on a silicon substrate using the proposed TFTL for application to a low-impedance transformation for broadband. The size of the impedance transformer was 0.01 mm2, which is only 1.04% of the size of a transformer fabricated using a conventional coplanar waveguide on a silicon substrate. The impedance transformer showed excellent RF performance for broadband.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.42-50
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• 2006

Co-Fe-Al-O nano-granular thin films with high electrical resistivity, fabricated by radio frequency magnetron sputtering under an $Ar+O_2$ atmosphere, are found to show good soft magnetic properties in the GHz frequency range. The real part value of the relative permeability is 260 at low frequencies and this value is maintained up to the GHz frequency range. A non-integrated type noise filter on a coplanar waveguide transmission line is demonstrated by using the Co-Fe-Al-O nano-granular thin film with the dimensions of $4\;mm(l){\times}4\;mm(w){\times}0.1\;{\mu}m(t)$. The insertion loss is very low being less than 0.3 dB and this low value is maintained up to 2 GHz. At a ferromagnetic resonance frequency of 3.3 GHz, the degree of noise suppression is measured to be 3 dB. This level of noise attenuation is small for real applications, but there is much room for further improvement by increasing the magnetic volume and integrating the magnetic thin film into the CPW transmission line.

• Journal of Magnetics
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• v.11 no.2
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• pp.90-94
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• 2006

A finite-element method is used to analyze loss generation and electromagnetic noise absorption characteristics of a coplanar waveguide transmission line integrated with a magnetic thin film. Parameters used in the analysis are the electrical resistivity of the magnetic layer and the thickness of both magnetic and insulating layers. The results indicate that L-C resonance is the main loss mechanism of the electromagnetic noise absorption.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.4
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• pp.272-275
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• 2019

We investigated the electrical characteristics of amorphous silicon-zinc-tin-oxide (a-SZTO) thin films deposited by RF-magnetron sputtering at room temperature depending on the deposition time. We fabricated a thin film transistor (TFT) with a bottom gate structure and various channel thicknesses. With increasing channel thickness, the threshold voltage shifted negatively from -0.44 V to -2.18 V, the on current ($I_{on}$) and field effect mobility (${\mu}_{FE}$) increased because of increasing carrier concentration. The a-SZTO film was fabricated and analyzed in terms of the contact resistance and channel resistance. In this study, the transmission line method (TLM) was adopted and investigated. With increasing channel thickness, the contact resistance and sheet resistance both decreased.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.375-379
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• 2003

In this paper, a novel design of multilayer ceramic-based Transmit/Receive (T/R) switch using Low Temperature Co-fired Ceramic (LTCC) technology have been presented. Compact T/R switch has been designed by transforming quarter-wave transmission line to its lumped equivalent circuit. Especially, high-Q three dimensional inductors with double strip have been proposed and incorporated. The proposed inductor has been modeled by multi-conductor coupled lines. A measured inductor quality factor (Q) of 80 and a Self-Resonance Frequency (SRF) of 6.6 GHz have been demonstrated. The inductor library has been incorporated into the design of WCDMA T/R switch.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.546-549
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• 2009

In this paper, we investigated the effects of different source/drain (S/D) electrode materials in thin film transistors (TFTs) based on indium-gallium-zinc oxide (IGZO) semiconductor. A transfer length and effective resistances between S/D electrodes and amorphous IGZO thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low drain voltage. The TFTs fabricated with Cu S/D electrodes showed the lowest contact resistance and transfer length indicating good ohmic characteristics, and good transfer characteristics with a field-effect mobility (${\mu}_{FE}$) of 10.0 $cm^2$/Vs.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.139-141
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• 2015

Contact resistance of interface between the channel layers and various S/D electrodes was investigated by transmission line method. Different electrodes such as Ti/Au, a-IZO, and multilayer of a-IGZO/Ag/a-IGZO were compared in terms of contact resistance, using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes showed good performance and low contact resistance due to the homo-junction with channel layer.