• Proceedings of the Membrane Society of Korea Conference
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• 1998.09a
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• pp.1-30
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• 1998

1. RO History 2. Asymmetric Membranes by Phase Inversion 3. Thin Film Composite (TFC) Membrane 4. Structure and Property Relationship of TFC Membrane 5. Membrane Materials 6. Tranport Mechanism(Model) 7. Membrane Characters in Separation Process 8. Concentration Polarization and Fouling Phenomenon 9. RO Membrane Module Configuration and System Design 10. Futrue Trend in RO Industry

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.489-493
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• 2005

TFT-LCD(Thin Film Transistor Liquid Crystal Display) module is representative commercial product of FPD(Flat Panel Display). Thickness of TFT-LCD module is very thin. It is adopted for major display unit for IT devices such as Cellular Phone, Camcorder, Digital camera and etc. Due to the harsh user environment of mobile IT devices, it requires complicated structure and tight assembly. And user requirements for the mechanical functionalities of TFT-LCD module become more strict. However, TFT-LCD module is normally weak to high level transient mechanical shock. Since it uses thin crystallized panel. Therefore, anti-shock performance is classified as one of the most important design specifications. Traditionally, the product reliability against mechanical shock is confirmed by empirical method in the design-prototype-drop/impact testredesign paradigm. The method is time-consuming and expensive process. It lacks scientific insight and quantitative evaluation. In this article, a systematic design evaluation of TFT-LCD module for mobile IT devices is presented with combinations of FEA and testing to support the optimal shock proof display design procedure.

• Journal of the Optical Society of Korea
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• v.7 no.1
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• pp.28-33
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• 2003

We describe the optimal design and the fabrication of a 2$\times$2 port optical device based on the thin film filter (TFF), and also propose a 4-channel OADM module using these devices. The optical performance of the proposed OADM module is evaluated theoretically and experimentally, and is compared to that of typical OADM modules using 1$\times$2 port optical devices for 4, 8, 16 and 32 drop channels in optical transmission systems. Since the 2$\times$2 port optical device accomplishes the function of wavelength multiplexing and demultiplexing simultaneously in the proposed OADM module, the insertion loss of through channels can be improved by 1.2 dB compare to that of typical OADM modules using 1$\times$2 port optical devices. In addition, both the size and the price of the module can be reduced to 40~50%.

• Journal of Power Electronics
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• v.11 no.2
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• pp.179-187
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• 2011

This paper proposes a MATLAB Simulink simulator for photovoltaic (PV) systems. The main contribution of this work is the utilization of a two-diode model to represent a PV cell. This model is known to have better accuracy at low irradiance levels which allows for a more accurate prediction of PV system performance. To reduce computational time, the input parameters are reduced to four and the values of $R_p$ and $R_s$ are estimated by an efficient iteration method. Furthermore, all of the inputs to the simulator are information available on a standard PV module datasheet. The simulator supports large array simulations that can be interfaced with MPPT algorithms and power electronic converters. The accuracy of the simulator is verified by applying the model to five PV modules of different types (multi-crystalline, mono-crystalline, and thin-film) from various manufacturers. It is envisaged that the proposed work can be very useful for PV professionals who require a simple, fast and accurate PV simulator to design their systems.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.392-392
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• 2009

결정질 실리콘 태양전지의 모듈화에는 일반적으로 저철분 강화유리를 사용하고 있으며, 이 경우 모듈화를 위해서는 3-5mm 두께의 강화유리를 EVA film을 사용하여 유리와 solar cell을 접착하는 방법을 사용하고 있다. 본 연구에서는 0.7mm 두께의 강화 유리를 사용하고, EVA film을 사용하지 않는 방법으로 초경량의 모듈을 제작하고, 그 특성을 비교하였다. 그결과 박판강화유리를 이용한 경량 실리콘 태양전지의 모듈화의 가장 큰 문제점으로는 강화유리의 두께가 아주 얇기 때문에 발생하는 module의 bending 현상에 의한 silicon cell의 파괴가 일어나는 경우가 있었으며 이를 위한 bending 방지기술의 개발이 요구되는 것으로 나타났다. 개선효과로는 솔라셀 모듈의 에너지변환효율은 동일한 솔라셀을 사용하여 일반 3mm 급의 저철분강화유리로 제작한 모듈에 비해서 약 20% 개선효과가 있었으며, 경량화에는 Al계 금속 지지대를 제외한 모듈만을 비교하여 무게의 감량을 비교한 결과 70%이상의 감량 효과를 나타내는 것으로 나타났다. 상기 결과로부터 본 연구를 통한 개발품은 BIPV형 solar cell module로 이용가치가 기대된다.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.281-284
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• 2007

Recently, we have developed p-i-n a-Si:H single junction thin film solar cells with RF (13.56MHz) plasma enhanced chemical vapor deposition (PECVD) system, and also successfully fabricated the mini modules ($>300cm^2$), using the laser patterning technique to form an integrated series connection. The efficiency of a mini module was 7.4% ($Area=305cm^2$, Isc=0.25A, Voc=14.74V, FF=62%). To fabricate large area modules, it is important to optimise the integrated series connection, without damaging the cell. We have newly installed the laser patterning equipment that consists of two different lasers, $SHG-YVO_4$ (${\lambda}=0.532{\mu}m$) and YAG (${\lambda}=1.064{\mu}m$). The mini-modules are formed through several scribed lines such as pattern-l (front TCO), pattern-2 (PV layers) and pattern-3 (BR/back contact). However, in the case of pattern-3, a high-energy part of laser shot damaged the textured surface of the front TCO, so that the resistance between the each cells decreases due to an incomplete isolation. In this study, the re-deposition of SnOx from the front TCO, Zn (BR layer) and Al (back contact) on the sidewalls of pattern-3 scribed lines was observed. Moreover, re-crystallization of a-Si:H layers due to thermal damage by laser patterning was evaluated. These cause an increase of a leakage current, result in a low efficiency of module. To optimize a-Si:H single junction thin film modules, a laser beam profile was changed, and its effect on isolation of scribed lines is discussed in this paper.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.29 no.3
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• pp.310-321
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• 2019

Objectives: The purpose of this study was to investigate types and characteristics of chemical substances used in LCD(Liquid crystal display) panel manufacturing process. Methods: The LCD panel manufacturing process is divided into the fabrication(fab) process and module process. The use of chemical substances by process was investigated at four fab processes and two module processes at two domestic TFT-LCD(Thin film transistor-Liquid crystal display) panel manufacturing sites. Results: LCD panels are manufactured through various unit processes such as sputtering, chemical vapor deposition(CVD), etching, and photolithography, and a range of chemicals are used in each process. Metal target materials including copper, aluminum, and indium tin oxide are used in the sputtering process, and gaseous materials such as phosphine, silane, and chlorine are used in CVD and dry etching processes. Inorganic acids such as hydrofluoric acid, nitric acid and sulfuric acid are used in wet etching process, and photoresist and developer are used in photolithography process. Chemical substances for the alignment of liquid crystal, such as polyimides, liquid crystals, and sealants are used in a liquid crystal process. Adhesives and hardeners for adhesion of driver IC and printed circuit board(PCB) to the LCD panel are used in the module process. Conclusions: LCD panels are produced through dozens of unit processes using various types of chemical substances in clean room facilities. Hazardous substances such as organic solvents, reactive gases, irritants, and toxic substances are used in the manufacturing processes, but periodic workplace monitoring applies only to certain chemical substances by law. Therefore, efforts should be made to minimize worker exposure to chemical substances used in LCD panel manufacturing process.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.796-805
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• 2000

A 30GHz band low noise amplifier module, which has linear gain of 30dB and noise figure of 2.6dB, for 30GHz satellite communication transponder was developed by use of MMIC and thin film MIC technologies. Two kinds of MMIC circuits were used for the low noise amplifier module, the first one is ultra low noise MMIC circuit and the other is wideband and high gain MMIC circuit. The pHEMT technology with 0.15$mu extrm{m}$ of gate length was applied for MMIC fabrication. Thin film microstrip lines on alumina substrate were used to interconnect two MMIC chips, and the thick film bias circuit board were developed to provide the stabilized DC bias. The input interface of the low noise amplifier module was designed with waveguide type to receive the signal from antenna directly, and the output port was adopted with K-type coaxial connector for interface with the frequency converter module behind the low noise amplifier module. Space qualified manufacturing processes were applied to manufacture and assemble the low noise amplifier module, and space qualification level of environment tests including thermal and vibration test were performed for it. The developed low noise amplifier was measured to show 30dB of minimum gain, $\pm$0.3dB of gain flatness, and 2.6dB of maximum noise figure over the desired operating frequency range from 30 to 31 GHz.

• Journal of Satellite, Information and Communications
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• v.3 no.1
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• pp.1-7
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• 2008

This Paper studied the design and measured results of a flight model for Ku-Band Linearized Channel Amplifier (LCAMP) for communication satellite onboard system. All MMICs, i.e. Variable Gain Amplifier (VGA), Variable Voltage Attenuator (VVA) with analog/digital attenuator, Branch line Hybrid Coupler and Detector for Pre-distorter are fabricated using Thin-Film Hybrid process. The performance of the fabricated module is verified through Radio Frequency circuit simulations and electrical function test in space environment for flight model at 12.25 to 12.75 GHz.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.341-344
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• 2017

Infrared (IR) filters were developed to implement integrated three-dimensional (3D) image sensors that are capable of obtaining both color image and depth information at the same time. The combination of light filters applicable to the 3D image sensor is composed of a modified IR cut filter mounted on the objective lens module and on-chip filters such as IR pass filters and color filters. The IR cut filters were fabricated by inorganic $SiO_2/TiO_2$ multilayered thin-film deposition using RF magnetron sputtering. On-chip IR pass filters were synthetized by dissolving various pigments and dyes in organic solvents and by subsequent patterning with photolithography. The fabrication process of the filters is fairly compatible with the complementary metal oxide semiconductor (CMOS) process. Thus, the IR cut filter and IR pass filter combined with conventional color filters are considered successfully applicable to 3D image sensors.