• Current Photovoltaic Research
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• 제11권4호
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• pp.103-107
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• 2023

A Nickel oxide (NiO_x) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiO_x thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of the NiO_x thin films annealed at various temperatures were measured using X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible spectroscopy. After optimizing the NiO_x coating conditions, perovskite solar cells were fabricated with p-i-n inverted structure, and its photovoltaic performance was evaluated. NiO_x thin films annealed at 350℃ exhibited the most favorable characteristics as a hole transport layer, resulting in the highest power conversion efficiency of 17.88 % when fabricating inverted perovskite solar cells using this film.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.309-309
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• 2011

There have been large research activities on the high quality oxide films for the realization oxide based electronics. However, the interface interdiffusion prohibits achieving high quality oxide films, when the oxide films are grown on non-oxide substrates. In the case of Si substrates, there exist lattice mismatch and interface interdiffusion when oxide films deposited on direct Si surface. In this presentation, we report the interface characteristics of yttria-stabilized zirconia films grown on silicon substrates. From x-ray reflectivity analysis we found that the film thickness and interface roughness decreased as the growth temperature increased, indicating that the growth mechanism varies and the chemical reaction is limited to the interface as the growth condition varies. Furthermore, the packing density of the film increased as the growth temperature increased and the film thickness decreased. X-ray photoelectron spectroscopy analysis of very thin films revealed that the amount of chemical shift increased as the growth temperature increased. Intriguingly, the direction of the chemical shift of Zr was opposite to that of Si due to the second nearest neighbor interaction.

• 한국전기전자재료학회논문지
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• 제29권10호
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• pp.595-600
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• 2016

In this paper, the oxide currents of thin silicon oxides is investigated. The oxide currents associated with the on time of applied voltage were used to measure the distribution of voltage stress induced traps in thin silicon oxide films. The stress induced leakage currents were due to the charging and discharging of traps generated by stress voltage in the silicon oxides. The stress induced leakage current will affect data retention in memory devices. The oxide current for the thickness dependence of stress current and stress induced leakage currents has been measured in oxides with thicknesses between $109{\AA}$, $190{\AA}$, $387{\AA}$, and $818{\AA}$ which have the gate area $10^{-3}cm^2$. The oxide currents will affect data retention and the stress current, stress induced leakage current is used to estimate to fundamental limitations on oxide thicknesses.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.401-405
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• 2017

Because silicon thin film solar cells have a high absorption coefficient in visible light, they can absorb 90% of the solar spectrum in a $1-{\mu}m$-thick layer. Silicon thin film solar cells also have high transparency and are lightweight. Therefore, they can be used for building integrated photovoltaic (BIPV) systems. However, the contact electrode needs to be replaced for fabricating silicon thin film solar cells in BIPV systems, because most of the silicon thin film solar cells use metal electrodes that have a high reflectivity and low transmittance. In this study, we replace the conventional aluminum top electrode with a transparent aluminum-doped zinc oxide (AZO) electrode, the band level of which matches well with that of the intrinsic layer of the silicon thin film solar cell and has high transmittance. We show that the AZO effectively replaces the top metal electrode and the bottom fluorine-doped tin oxide (FTO) substrate without a noticeable degradation of the photovoltaic characteristics.

• 한국재료학회지
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• 제14권11호
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• pp.821-827
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• 2004

Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.264-264
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• 2013

Strong metal-support interaction effect is an important issue in determining the catalytic ac-tivity for heterogeneous catalysis. In this study, we investigated the support effect and the role of organic capping layers of two-dimensional Pt nanocatalysts on reducible metal oxide supports under the CO oxidation. Several reducible metal oxide supports including CeO2, Nb2O5, and TiO2 thin films were prepared via sol-gel techniques. The structure, chemical state and optical property were characterized using XRD, XPS, TEM, SEM, and UV-VIS spectrometer. We found that the reducible metal oxide supports have a homogeneous thin thickness and crystalline structure after annealing at high temperature showing the different optical band gap energy. Langmuir-Blodgett technique and arc plasma deposition process were employed to ob-tain Pt nanoparticle arrays with capping and without capping layers, respectively on the oxide support to assess the role of the supports and capping layers on the catalytic activity of Pt catalysts under the CO oxidation. The catalytic performance of CO oxidation over Pt supported on metal oxide thin films under oxidizing reaction conditions (40 Torr CO and 100 Torr O2) was tested. The results show that the catalytic activity significantly depends on the metal oxide support and organic capping layers of Pt nanoparticles, revealing the strong metal-support interaction on these nanocatalysts systems.

• 멤브레인
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• 제29권3호
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• pp.130-139
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• 2019

그래핀, 제올라이트, metal-organic frameworks (MOF)s 등 다양한 나노 소재를 이차원 나노쉬트 형태로 제조하고, 이를 이용한 초박막 고성능 분리막을 개발하고자 하는 연구가 활발히 진행되고 있다. 특히, 산화그래핀의 경우, 2000년대 초반에 관련 연구가 시작된 이후, 다양한 합성 및 박막 코팅 기술이 축적되어 있어 빠른 속도로 분리막 분야에 응용되고 있다. 다층으로 적층된 산화그래핀 박막은 층간 거리를 조절함에 따라 물리적 거름막으로 작용할 수 있으며, 또한 표면의 기능기 및 삽입된 물질과 거르는 물질 간의 상호작용을 제어함에 따라 다양한 물질의 선택적 분리가 가능하다. 본 총설에서는 산화그래핀의 나노여과막 응용분야에 관하여 중점적으로 다루고자 한다. 본고에서는, 다양한 용매 내에서 산화그래핀 박막의 분리 기작 및 성능에 영향을 미치는 핵심 요소들에 대해 요약하였으며, 그 외 산화그래핀 기반 분리막의 실질적인 상용화에 필요한 핵심 기술요소 및 개발 동향에 대하여 논하고자 한다.

• Progress in Superconductivity
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• 제6권2호
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• pp.118-123
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• 2005

A low cost YBCO oxide powder was employed as a starting precursor for MOD process. YBCO oxide is advantageous over metal acetates or TFA salts which are popular starting precursors for conventional MOD-TFA process because that YBCO oxide precursor is cheap and easy to control molar ratio. YBCO thin films were prepared by this oxide-precursor-based MOD process and annealing condition was optimized. The YBCO thin film annealed at below $780^{\circ}C$ shows no transport $I_c$ and poor microstructure. Raman spectroscopic study of YBCO thin film indicates that YBCO thin film prepared at below $780^{\circ}C$ contains a number of imperfections such as non-superconducting $BaCuO_2$ phase, cation disorder, etc. However, the YBCO thin film treated at above $800^{\circ}C$ shows improvement in microstructure and current transport properties. This research was supported by a grant from Center for Applied Superconductivity Technology of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.

• 마이크로전자및패키징학회지
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• 제23권3호
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• pp.31-35
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• 2016

본 논문은 원자층 증착법을 이용해 증착된 YSZ 박막을 산화 세륨계 전해질 기반 고체 산화물 연료전지의 연료극 중간층으로 적용한 결과를 보여준다. $500^{\circ}C$ 이상의 고온에서는 산화 세륨계 전해질의 전기전도도가 상승하여 이를 전해질로 사용한 고체 산화물 연료전지의 개회로 전압이 하강하고 성능이 저하된다. 원자층 증착법을 이용해 연료극 측 전해질 표면에 증착된 YSZ 박막은 얇은 두께(60 nm)에도 불구하고 산화 세륨계 전해질 표면을 완벽하게 도포함으로써, 전해질을 관통하는 전자의 흐름을 막아 개회로 전압을 최대 20%까지 상승시켰다. 이를 통해 $500^{\circ}C$에서의 최대 전력 밀도는 52%가 상승하였다.

• 한국세라믹학회지
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• 제43권11호
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• pp.715-723
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• 2006

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.