• Title/Summary/Keyword: Thin metal structure

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Electrical Properties by Effect of Metal Complex of G4-48PyP Dendritic Macromolcules Thin Films (G4-48PyP 덴드리틱 거대분자 박막의 금속이온 착체에 의한 전기적 특성)

  • Son, J.H.;Jung, S.B.;Kim, B.S.;Park, T.C.;Kwon, Y.S.
    • Proceedings of the KIEE Conference
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    • 2002.11a
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    • pp.16-18
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    • 2002
  • We attempted to fabricate a dendrimer Langmuir-Blodgett(LB) films containing 48 pyridinepropanol functional end group. As the pyridinepropanol functional group could form a complex structure with metal ions. In this study the samples for electrical measurement were fabricated to two types metal complexes with $Pt^{4+}$ and $Fe^{2+}$ ions by LB method. And we have investigated the surface activity at the air-water interface as well as the electrical properties for the monolayers of pure G4-48PyP dendrimer and its complex with metal ions($Pt^{4+}$ and $Fe^{2+}$ ions). In the surface pressure-area($\pi-A$) isotherms of the dendrimers, the stable condensed films formed at the air-water interface and the metal ions effect showed the difference on molecular behavior. We have studied the electrical properties of the ultra thin dendrimer LB films investigated by the current-voltage(I-V) characteristics of metal/dendrimer LB films/metal(MIM) structure. In conclusion, it is demonstrated that the metal ion around G4-48PyP dendrimer can contribute to make formation of network structure among dendrimers and it result from the change of electrical properties.

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Characteristic of Electrical Conduction in LB Ultra Thin Films (LB 초박막의 전기전도 특성 (II) - Schottky Current에 대하여 -)

  • Lee, Won-Jae;Kim, Jae-Ho;Kwon, Young-Soo;Hong, Eon-Sik;Kang, Dou-Yol
    • Proceedings of the KIEE Conference
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    • 1990.11a
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    • pp.121-124
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    • 1990
  • In this paper, we study the electrical conduction mechanism in Langmuir-Blodgett(LB) ultra thin films. The LB device was a metal/LB films/metal sandwich structure, where metal is electrode. In our experiments, the temperature depend on the current at above $0^{\circ}C$. This phenomena show that the electrical conduction current is a schottky current inherent to LB ultra thin films.

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Development of The Pilotless Type Progressive Die for Thin Sheet Metal

  • Sim, Sung-Bo;Jang, Chan-Ho;Sung, Yul-Min
    • Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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    • 2001.05a
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    • pp.289-294
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    • 2001
  • This study reveals the thin sheet metal Process with multi-forming die that the name is progressive die, also high precision production part is made. They require analysis of many kinds of important factors, i.e. theory and practice of metal press working and its phenomena, die structure, machining condition for die making, die material, heat treatment of die components, know-how and so on. In this study, we designed and constructed a multi-forming progressive die as a bending working of multi-stage and peformed through the try out. Out of the characteristics of this paper that nothing might be ever seen before such as this type of research method on the all of processes of thin and high precision production part.

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Development of the Multi Stage Type Die for Thin Sheet Metal Working

  • Sim, Sung-Bo;Park, Sun-Kyu;Lee, Sng-Hoon
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2001.10a
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    • pp.190-195
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    • 2001
  • The piercing and blanking of thin sheet metal working is specified division in press die design and making. In order to prevent the defects, the optimum design of the production part, strip process layout, die design, die making and try out etc. are necessary the analysis of effective factors. For example, theory and practice of metal shearing process and it's phenomena, die structure, machine tool working for die making, die materials and it's heat treatment, metal working in field, their know how etc. are included in those factors. In this study, we analyzed whole of data base, theoretical back ground of metal working process, and then performed the progressive die tryout with the screw press.

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Examination of Dust Trapping Mechanism in a Metal Fiber Filter-bed (금속 섬유 필터층을 이용한 미세 분진 집진 성능 관찰)

  • 이경미;조영민
    • Journal of Korean Society for Atmospheric Environment
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    • v.20 no.3
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    • pp.361-369
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    • 2004
  • A metal fiber bed has seldom been applied to the practical filtration process despite its excellent mechanical and chemical stability. The filter-bed used in this work was highly porous with open structure, of which apparent porosity was 80 ∼ 90%. Although pressure loss across the filter-bed was very low, separation efficiency was found to be quite high. This paper focuses on the basic filtration mechanisms of a metal filter-bed and a thin ceramic filter from fly ash for reference. The experimental parameters were face velocity, dust loading and porosity of filter-bed. Pressure drop increased with increasing face velocity and dust feeding load for both filters. It also showed that dust particles deposited in the deep flow path, finally resulting in clogging the pore channels. It thereby indicates that the dominating mechanism of the metal filter-bed would be depth filtration. Meanwhile, the thin fly ash composite filters trapped the aerated dust mainly on the surface of the filter medium, so that the instantaneously formed dust layer might cause a steep increase of pressure drop across the filtration system.

Plasma Polymerized Styrene for Gate Insulator Application to Pentacene-capacitor (유기박막트랜지스터 응용을 위해 플라즈마 중합된 Styrene 게이트 절연박막)

  • Hwang, M.H.;Son, Y.D.;Woo, I.S.;Basana, B.;Lim, J.S.;Shin, P.K.
    • Journal of the Korean Vacuum Society
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    • v.20 no.5
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    • pp.327-332
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    • 2011
  • Plasma polymerized styrene (ppS) thin films were prepared on ITO coated glass substrates for a MIM (metal-insulator-metal) structure with thermally evaporated Au thin film as metal contact. Also the ppS thin films were applied as organic insulator to a MIS (metal-insulatorsemiconductor) device with thermally evaporated pentacene thin film as organic semiconductor layer. After the I-V and C-V measurements with MIM and MIS structures, the ppS revealed relatively higher dielectric constant of k=3.7 than those of the conventional poly styrene and very low leakage current density of $1{\times}10^{-8}Acm^{-2}$ at electric field strength of $1MVcm^{-1}$. The MIS structure with the ppS dielectric layer showed negligible hysteresis in C-V characteristics. It would be therefore expected that the proposed ppS could be applied as a promising dielectric/insulator to organic thin film transistors, organic memory devices, and flexible organic electronic devices.

Structural, Morphological and Electrical Properties of TiO2 Thin Films Deposited by ALD Method

  • Seung-Yeon Oh;Jae-Min Shin;Gyeong-Hun Na;Min-Seok Kwon;Sang-Jeen Hong;Bumsuk Jung
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.2
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    • pp.87-95
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    • 2023
  • TiO2 thin films were grown using the Atomic Layer Deposition (ALD) and their structural and electrical properties were investigated. The crystal structure, dielectric constant, and surface roughness of the TiO2 thin films grown by the ALD deposition method were studied. The grown TiO2 thin films showed an anatase crystal structure, and their properties varied with temperature. In particular, the properties of the TiO2 thin films were confirmed by changing the process temperature. The electrical properties of Metal-Insulator-Silicon (MIS) capacitor structures were analyzed using a probe station. The performance improvement of capacitors using TiO2 as a dielectric was confirmed by measuring capacitance through Capacitance-Voltage (C-V) curves.

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Design of Transparent Electromagnetic Absorbing Structure using Metal Grid Mesh Printing (Metal Grid Mesh 인쇄를 이용한 투명 전파 흡수구조 설계)

  • Yoon, Sun-Hong;Lee, Jun-Sang;Lee, In-Gon;Hong, Ic-Pyo
    • Journal of the Korea Institute of Military Science and Technology
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    • v.19 no.3
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    • pp.294-301
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    • 2016
  • In this paper, we designed the transparent circuit analog radar absorbing structure using printed metal grid mesh for enhanced optical transmittance. To obtain wideband electromagnetic absorption and enhanced optical transparency at X-band, we proposed the resistive FSS(Frequency Selective Surface) using printed metal mesh pattern on transparent glass with PEC(Perfect Electric Conductor) plane using ITO(Indium Thin Oxide) coating. We then fabricated the proposed structure to verify the simulation results obtained from commercial EM simulator. The comparisons between the simulation and measured results show good agreements. The results also show that the proposed radar absorbing structure can provide wideband reflection as well as better optical transparency. We can apply this proposed structure to the canopy of stealth aircraft and other stealth and security applications for visible transparency.

The etching properties of MgO thin films in $Cl_2/Ar$ gas chemistry (유도 결합 플라즈마를 이용한 MgO 박막의 식각특성)

  • Koo, Seong-Mo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.734-737
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    • 2004
  • The metal-ferroelectric-semiconductor (MFS) structure is widely studied for nondestructive readout (NDRO) memory devices, but conventional MFS structure has a critical problem. It is difficult to obtain ferroelectric films like PZT on Si substrate without interdiffusion of impurities such as Pb, Ti and other elements. In order to solve these problems, the metal-ferroelectric-insulator-semiconductor (MFIS) structure has been proposed with a buffer layer of high dielectric constant such as MgO, $Y_2O_3$, and $CeO_2$. In this study, the etching characteristics (etch rate, selectivity) of MgO thin films were etched using $Cl_2/Ar$ plasma. The maximum etch rate of 85 nm/min for MgO thin films was obtained at $Cl_2$(30%)/Ar(70%) gas mixing ratio. Also, the etch rate was measured by varying the etching parameters such as ICP rf power, dc-bias voltage, and chamber pressure. Plasma diagnostics was performed by Langmuir probe (LP) and optical emission spectroscopy (OES).

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