• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.422-425
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• 2004

In this study, the AZO thin films were prepared as a function of oxygen gas flow ratio at room temperature by FTS(Facing Targets Sputtering) apparatus using Zn:Al(metal)-Zn:Al(metal) or Zn(metal)-ZnO:Al(ceramic). The film thickness, crystalline and electric properties of AZO thin film was evaluated by $\alpha$-step, XRD and 4-point probe. In the results, the resistivity of AZO thin film was shown the lowest value about 8${\times}$10$^{-2}$ $\Omega$-cm(Zn:Al-Zn:Al), 3${\times}$10$^{-1}$ $\Omega$-cm(Zn-ZnO:Al) at the oxygen gas flow ratio 0.3. And the AZO thin film has good crystalline at oxygen gas flow ration 0.4, using Zn:Al-Zn:Al targets.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.318.2-318.2
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• 2014

The high contact resistance is still one of the major issues to be resolved in CdS/CdTe thin film solar cells. CdTe/Metal Schottky contact induced a high contact resistance in CdS/CdTe solar cells. It has been reported that the work function of CdTe thin film is more than 5.7 eV. There has not been a suitable back contact metal, because CdTe thin film has a high work function. In a few decades, some buffer layer was reported to improve a back contact problem. Buffer layers which are Te, $Sb_2Te_3$, $Cu_2Te$, ZnTe:Cu and so on was inserted between CdTe and metal electrode. A formed buffer layers made a tunnel junction. Hole carriers which was excited in CdTe film by light absorption was transported from CdTe to back metal electrode. In this report, we reported the variation of solar cell performance with different buffer layer at the back contact of CdTe thin film solar cell.

• Journal of the Korean Graphic Arts Communication Society
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• v.29 no.3
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• pp.133-142
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• 2011

We produce a photosensitive convex plate to research a Nickel metal relief printing plate using galvanic process. A Method for preparing DLC convex plate that is metalized on Nickel metal relief printing plate using CVD(Chemical Vapor Deposition) process and $N_2DLC$-convex plate that is DLC metalized thin film layer of $N_2$ plasma surface treatment are comprised. DLC thin film layers on Nickel surface are fragile. The results of the research indicate that the coefficient of friction on DLC metalized thin film layer is relatively low than Nickel surface and the durability of Nickel surface coated DLC metalized thin film layer is superior to Nickel surface. A relative evaluation of three form plate wetting properties using varnish liquid-drop plate indicates superior printing aptitudes for $N_2DLC$, DLC, Nichel plate order as above.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.13-13
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• 2010

The solar energy conversion will take 10 % global energy need by 2033. A thin film type solar cell has been considered as one of the promising candidates for a large area applicable solar cell fabrication at a low cost. The metal-assisted growth of microcrystalline Si (mc-Si) films has been reported for a quality Si film synthesis at a low temperature. It discusses the spontaneous growth of a Si film above a metal-layer for a thin film solar cell. Quite recently, a substantial demand of nanomaterials has been addressed for cost-effective solar cells. The nanostructure provides a large photoactive surface at a fixed volume, which is an advantage in the effective use of solar power. But the promising of nanostructure active solar cell has not been much fulfilled due mainly to the difficulty in architecture of nanostructures. We present here the Si nanowire (SiNW)-embedded Schottky solar cell. Multiple SiNWs were connected to two different metals to form a Schottky or an ohmic contact according to the metal work function values. It discusses the scheme of rectifying contact between metals and SiNWs and the SiNW-embedded Schottky solar cell performances.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.110-114
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• 2011

Polymeric films of high chemical stability and mechanical strength covered with a thin metallic film have been extensively used in various fields as electric and electronic materials. In this study, we have chosen polypropylene (PP) as the polymer due to its outstanding chemical resistance and good creep resistance. We coated thin nickel film on PP films by the electroless plating process. The surfaces of PP films were pre-treated and modified to increase the adhesion strength of metal layer on PP films, prior to the plating process, by an environment-friendly process with atmospheric plasma generated using dielectric barrier discharges in air. The surface morphologies of the PP films were observed before and after the surface modification process using a scanning electron microscope (SEM). The static contact angles were measured with deionized water droplets. The cross-sectional images of the PP films coated with thin metal film were taken with SEM to see the combined state between metallic and PP films. The adhesion strength of the metallic thin films on the PP films was confirmed by the thermal shock test and the cross-cutting and peel test. In conclusion, we made a composite material of metallic and polymeric films of high adhesion strength.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.06a
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• pp.154-154
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• 1998

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.696-699
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• 2003

In this study, we suggested the model to precisely evaluate the ferroelectric hysteresis loop, using the modified Sawyer-Tower circuit and the ferroelectric capacitor with a MDFM(Metal-Dielectric-ferroelectric-Metal) structure. The mathematical expression of dipole polarization is applied to the numerical integration algorithm, and the fatigue property can be considered including the dielectric layer between ferroelectrics and bottom electrode. The validity of our model is proved comparing the estimated value of our model and the measured results of PLT(10) thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.826-829
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• 2003

Metal/chalcogenide glass semiconductor(CGS) thin film devices were produced in the vacuum evaporator by the methode of vacuum thermal evaporation. We investigated the influence of the correlations of thickness of metal and CGS upon the concentration of Metal in a CGS thin film. It has shown that M/CGS thin film devices were very sensitive to temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.405-409
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• 2001

This paper describes fabrication and characteristics of metal thin-film pressure sensor for working at high temperature. The proposed pressure consists of a chrom thin-film, patterned on a Wheat stone bridge configuration, sputter-deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097∼1.21mV/V$.$kgf/$\textrm{cm}^2$ in the temperature range of 25∼200$^{\circ}C$ and the maximum non-linearity is 0.43%FS.