• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.313-314
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• 2006

In this paper, the inorganic-organic thin film encapsulation layer was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter and Spin-Coater system, the various kinds of inorganic and organic thin-films were deposited onto the Ethylene Terephthalate(PET) and their interface properties between organic and inorganic layer were investigated Results indicates that the SiON/PI/SiON/PI/PET barrier coatings have high potential for flexible organic light-emitting diode(OLED) application.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.192-192
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• 2006

Organic/organic and organic/inorganic multilayer films composed of organic polyelectrolytes (PE) and inorganic nanoparticles/platelets were prepared from the layer-by-layer (LbL) deposition using both spinning and dipping. The difference in both LbL methods is quantitatively compared in terms of internal layer ordering and physical properties of the multilayered films. Additionally, we suggest that the patterned multilayer films can be easily prepared by the combination of the spin SA and the lift-off method. Freestanding films were also prepared with the LbL deposition on low energy substrates, which allows the detailed analysis of composition within the films. Other LbL thin films prepared with block copolymer micelles will be discussed.

• 대한조선학회지
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• 제16권3호
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• pp.35-47
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• 1979

Wave resistance of a parabolic thin ship, with its boundary layer and wake taken into account, was calculated up to second order. In addition to the double-model source distribution on the centerplane, image sources of the wave potential were calculated to keep the body introduced boundary condition undisturbed. Boundary layer and wake effects on the wave-making resistance were included by generating an irrotational flow which matches that exterior to the boundary layer and wake. For this purpose, the boundary layer and wake were calculated. The wave resistance refined with second-order corrections are found to be very important for wave resistance calculations even at moderate Froude numbers($Fr=0.2{\sim}0.3$). Wave-potential corrections are dominate around the bow. On the other hand, Viscosity plays and important role at the stern with its boundary layer and wake development.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.465-465
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• 2013

Inorganic 물질인 SiO2 dielectric 위에 organic dielectric PVP (4-vinyphenol)를 spin coating으로 올려, inorganic/organic dielectric 형태의 double layer구조로 High-performance amorphous indiumgallium zinc oxide thin-film transistors (IGZO TFT)를 제작하여 보았다. SiO2 dielectric을 buffer layer로 80 nm, PVP는 10Wt% 400 nm로 구성하였으며, 200 nm single SiO2 dielectric과 동일한 수준의 leakage current 특성을 MIM Capacitor 구조를 통해서 확인할 수 있었다. 이 소자의 장점은 용액공정의 도입으로 공정 시간의 단축 및 원가 절감을 이룰 수 있으며, dielectric과 channel 사이의 균일한 interface의 형성으로 interface trap 개선 및 Yield 향상의 장점을 갖는다. 우리는 실험을 통해서 SiO2 buffer layer가 수직 electric field에 의한 leakage current을 제어하고, PVP dielectric은 interface를 개선하는 것을 확인하였다. Vth의 negative shift 및 slope의 향상으로 구동전압이 줄어들고, 균일한 I-V Curve 형성을 통해서 Process Yield의 향상을 확인하였다.

• 전기학회논문지
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• 제65권3호
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• pp.445-451
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• 2016

General fuse elements of solution for fast acting operation characteristics made using silver or silver alloy, those are not able to dominate cost competition to the advanced global leaders that have not only high technology but competitive price. In this study, the method that compose the fuse elements manufactured solution of fast acting operation characteristics by using precision multi-layer thin film plating and helical cutting process from low-priced copper metal. Furthermore, in order to move rated current line of fuse due to the heat loses, the manufacture construction method of fixed resistor is introduced, and then Ni-P plating layer and Sn plating layer are introduced multiply for controling fine opening time characteristics. So this study can establish the high productive and low-priced production method.

• Journal of Magnetics
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• 제14권1호
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• pp.31-35
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• 2009

Herein, the Magneto-Optical Kerr Effect (MOKE) signal enhancement in nanostructures in investigated. It is well known that the MOKE signals of ferromagnetic thin films are enhanced with an additional dielectric layer due to multiple reflections. The MOKE signal is modulated with the additional dielectric layer thickness and is at a maximum when reflectivity is at a minimum. This is not always true in the nanostructures due to the contribution from the non-magnetic substrate portion, especially when substrate reflectivity is minimized and the dependence of the additional dielectric layer thickness for the nanostructure is changed in the case of the continuous thin film. We showed that the MOKE signal for nanostructures could be enhanced with a properly designed, dielectric layer in addition to the anti-reflection coated substrates.

• 센서학회지
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• 제20권4호
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• pp.260-265
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• 2011

The silicon vertical hall devices are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$, interface and n-epi layer without $n^+$buried layer to improve the sensitivity and influence of interface effects. Experimental samples are a sensor type I with and type H without p+isolation dam adjacent to the center current electrode. The experimental results for both type show a more high current-related sensitivity than the former's vertical hall devices. The sensitivity of type H and type I are about 150 V/AT and 340 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.6-8
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• 2002

In order to prepare magnetic recording layer with a good quality crystallographic characteristic. We prepared $Co_{77}Cr_{20}Ta_3$ layer for perpendicular magnetic recording media on slide glass substrate by Two-Step Methode. The thickness of magnetic layer was fixed 100 nm and buffer layer were varied from 10 to 50 nm, and input current was varied from 0.2[A] to 0.5[A]. The surface morphology and crystal orientation of the CoCrTa films were examined with XRD. Prepared thin films showed improvement of dispersion angle of c-axis orientation ${\Delta}{\theta}_{50}$ caused by inserting buffer layer.

• Current Photovoltaic Research
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• 제10권1호
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• pp.23-27
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• 2022

In this study, we investigate organic-inorganic halide perovskite solar cells with a vacuum thermal evaporated hole transporting layer (NPB/MoO_3-x). By replacing solution process based Spiro-MeOTAD with vacuum thermal evaporation based NPB/MoO_3-x, a thin hole transporting layer was implemented. In addition, parasitic absorption that may occur during the doping process was eliminated by excluding solution process doping. In a solar cell with a thin vacuum thermal evaporated hole transporting layer, the short-circuit current density (Jsc) increased to 23.93 mA/cm², resulting in the highest power converstion efficiency (PCE) at 18.76%. Considering these results, it is essential to control the thickness of hole transporting layer located at the top in solar cell configuration.

• ETRI Journal
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• 제44권1호
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• pp.147-154
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• 2022

We demonstrate a new double-layer structure for stretchable interconnects, where the top surface of a serpentine polyimide support is coated with a thin eutectic gallium-indium liquid metal layer. Because the liquid metal layer is constantly fixed on the solid serpentine body in this liquid-on-solid structure, the overall stretching is accomplished by widening the solid frame itself, with little variation in the total length and cross-sectional area of the current path. Therefore, we can achieve both invariant resistance and infinite fatigue life by combining the stretchable configuration of the underlying body with the freely deformable nature of the top liquid conductor. Further, we fabricated various types of double-layer interconnects as narrow as 10 ㎛ using the roll-painting and lift-off patterning technique based on conventional photolithography and quantitatively validated their beneficial properties. The new interconnecting structure is expected to be widely used in applications requiring high-performance and high-density stretchable circuits owing to its superior reliability and capability to be monolithically integrated with thin-film devices.