• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.237-237
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• 2009

Zinc oxide (ZnO) thin film was deposited on Si substrates using polycrystalline (poly) 3C-SiC buffer layer, in which the ZnO film was grown by sol-gel method. Physical characteristics of the grown ZnO film was investigated experimentally by means of SEM, XRD, FT-IR (Furier Transform-Infrared spectrum), and AFM. XRD pattern was proved that the grown ZnO film on 3C-SiC layers had highly (002) orientation with low FWHM (Full width of half maxium). These results showed that ZnO thin film grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.215-219
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• 2007

In this work, the indium zinc oxide (IZO) films had been deposited on the glass substrate coated with the SiO film. Based on a comparative investigation of the IZO monolayer and IZO/SiO multilayer, it is shown that the thickness of SiO film has a great effect on the mechanical properties of the thin films. The AFM images of the IZO thin film included the SiO film were shown smoother surfaces than monolayer. Resistivity was in inverse proportion to Mobility. If it deposited the SiO film on the substrate, the layer of change was generated between two layer(SiO and substrate). The layer of change influenced resistance because of oxygen content was more than the IZO monolayer.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.282-282
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• 2006

Nanoporous organosilicate thin films were realized by the microphase separation of pore generating components mixed with an organosilicate matrix. The refractive index of such nanoporous organosilicate films can be tuned in the range of $1.40{\sim}1.22$. With a nanoporous single layer with n ${\sim}1.225,\;99.85\;%$ transmittance in the visible range was achieved. In order to overcome the limitation on the narrow wavelength for high transmittance imposed by single nanoporous thin films, bilayer thin films with different reflectance for each layer were prepared by inserting high refractive index layer with a refractive index of 1.447. It is demonstrated that the novel broadband antireflection coating with improved transmittance can be easily achieved by the nanoporous bilayer thin films described in present study.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1065-1068
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• 2003

For the first time, high quality ultra-thin strained Si/SiGe on Insulator (SGOI) substrate with total SGOI thickness( $T_{Si}$ + $T_{SiGe}$) of 13 nm is developed to combine the device benefits of strained silicon and SOI. In the case of 6- 10 nm-thick top silicon, 100-110 % $I_{d,sat}$ and electron mobility increase are shown in long channel nFET devices. However, 20-30% reduction of $I_{d,sat}$ and electron mobility are observed with 3 nm top silicon for the same long channel device. These results clearly show that the FETs operates with higher performance due to the strain enhancement from the insertion of SiGe layer between the top silicon layer and the buried oxide(BOX) layer. The performance degradation of the extremely thin( 3 nm ) top Si device can be attributed to the scattering of the majority carriers at the interfaces.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.190.2-190.2
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• 2014

We report the origin of the improvement of the power conversion efficiency (PCE) of hybrid thin-film solar cells when a soluble C60 derivative, [6,6]-phenyl-$C_{61}$-butyric acid methyl ester (PCBM), is introduced as a hole-blocking layer. The PCBM layer could establish better interfacial contact by decreasing the reverse ark-saturation current density, resulting in a decrease in the probability of carrier recombination. The power conversion efficiency of this optimized device reached a maximum value of 8.34% and is the highest yet reported for hybrid thin-film solar cells.

• 한국인쇄학회지
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• 제29권3호
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• pp.133-142
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• 2011

We produce a photosensitive convex plate to research a Nickel metal relief printing plate using galvanic process. A Method for preparing DLC convex plate that is metalized on Nickel metal relief printing plate using CVD(Chemical Vapor Deposition) process and $N_2DLC$-convex plate that is DLC metalized thin film layer of $N_2$ plasma surface treatment are comprised. DLC thin film layers on Nickel surface are fragile. The results of the research indicate that the coefficient of friction on DLC metalized thin film layer is relatively low than Nickel surface and the durability of Nickel surface coated DLC metalized thin film layer is superior to Nickel surface. A relative evaluation of three form plate wetting properties using varnish liquid-drop plate indicates superior printing aptitudes for $N_2DLC$, DLC, Nichel plate order as above.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.367-368
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• 2007

To investigate the 2nO thin films which are interested in the next generation of short wavelength LEDs and Lasers and UV photodetector with p-type inversion layer, the ZnO thin films were deposited by RF sputtering system. Gas ratios and work pressure is Ar : $O_2$ = 4 : 1 and 15 mTorr, respectively, and the purity of ZnO target is 5N. The ZnO thin films were deposited at 300, 450, and $650^{\circ}C$. The current-voltage, responsivity and quantum efficiency of devices were studied and compared with each devices.

• 한국재료학회지
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• 제34권2호
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• pp.79-84
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• 2024

Thin films of yttria-stabilized zirconia (YSZ) nanoparticles were prepared using a low-temperature deposition and crystallization process involving successive ionic layer adsorption and reaction (SILAR) or SILAR-Air spray Plus (SILAR-A+) methods, coupled with hydrothermal (175 ℃) and furnace (500 ℃) post-annealing. The annealed YSZ films resulted in crystalline products, and their phases of monoclinic, tetragonal, and cubic were categorized through X-ray diffraction analysis. The morphologies of the as-prepared films, fabricated by SILAR and SILAR-A+ processes, including hydrothermal dehydration and annealing, were characterized by the degree of surface cracking using scanning electron microscopy images. Additionally, the thicknesses of the YSZ thin films were compared by removing diffusion layers such as spectator anions and water accumulated during the air spray plus process. Crack-free YSZ thin films were successfully fabricated on glass substrates using the SILAR-A+ method, followed by hydrothermal and furnace annealing, making them suitable for application in solid oxide fuel cells.

• 한국세라믹학회지
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• 제42권9호
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• pp.624-630
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• 2005

To investigate the possibility of the $ZrO_2$ buffer layer as the insulator for the Metal-Ferroelectric-Insulator-semiconductor (MFIS) structure, $ZrO_2$ and $SrBi_2Ta_2O_9$ (SBT) thin films were deposited on the P-type Si(111) wafer by the R.F. magnetron-sputtering method. According to the process with and without the post-annealing of the $ZrO_2$ buffer layer and SBT thin film, the diffusion amount of Sr, Bi, Ta elements show slight difference through the Glow Discharge Spectrometer (GDS) analysis. From X-ray Photoelectron Spectroscopy (XPS) results, we could confirm that the post-annealing process affects the chemical binding condition of the interface between the $ZrO_2$ thin film and the Si substrate. Compared to the MFIS structure without the post-annealing of the $ZrO_2$ buffer layer, memory window value of MFlS structure with post-annealing of the $ZrO_2$ buffer layer were considerably improved. The window memory of the Pt/SBT (260 nm, $800^{\circ}C)/ZrO_2$ (20 nm) structure increases from 0.75 to 2.2 V under the applied voltage of 9 V after post-annealing.

• 한국위성정보통신학회논문지
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• 제10권2호
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• pp.90-94
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• 2015

본 연구에서는 Solution Process를 적용한 Strontium Oxide를 배향막으로 사용한 경우의 액정배향 특성에 대해서 연구하였다. Stronium Oxide 는 High K 물질로 배향막으로 사용할 경우 임계치 전압을 효율적으로 조절할 수 있는 장점이 있으나, 액정분자와의 배향에 관한 상호관계에 대해서는 많은 연구가 진행되지 않았었다. 0.1~0.4 Mol 롤 농도를 조절한 Strontium Oxide를 Solution Process 로 배향막으로서 제조함으로써, 보다 생산성이 좋은 방법을 제시할 수 있었으며, 재료가 갖는 우수한 특성을 반영한 액정디스플레이의 제조가 가능하였다. 샘플 측정결과 1.447~1.613V 의 임계치 전압특성을 보여주어 기존의 방법으로 제조된 액정디스플레 이와 동등 혹은 우월한 특성을 갖고 있음을 알 수 있었다.