• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.163-167
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• 2002

Improved optical switching property of electrochromic nickel hydroxide/nickel glass thin film is reported. Nickel metal film was deposited on glass by e-beam evaporation before following electrochemical redox cycling to form nickel hydroxide for electrochromic activation. Without ITO (indium tin oxide) layer as electrical conductor, this electrode showed more rapid coloration rate than nickel hydroxide film on ITO substrate in the change of the electric voltage and optical transmittance. XPS analysis confirmed the existence of ultra-thin nickel metal layer (${\sim}10{\AA}$) between electrochemically grown nickel hydroxide and the glass substrate. It is concluded that the remained nickel metal nano-layer attribute to the conduction layer and the enhanced response time.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.84.2-84.2
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• 2010

PEMS (printed electro-mechanical system) is fabricated by means of various printing technologies. Passive and active components in 2D or 3D such as conducting lines, resistors, capacitors, inductors and TFT, which are printed with functional materials, can be classified in this category. And the issue of PEMS is applied to a R2R process in the manufacturing process. In many electro-devices, the vacuum process is used as the manufacturing process. However, the vacuum process has a problem: it is difficult to apply toa continuous process as a R2R printing process. In this paper, we propose an ESD (electro static deposition) printing process has been used to apply an organic solar cell of thin film forming. ESD is a method of liquid atomization by electrical forces, anelectrostatic atomizer sprays micro-drops from the solution injected into the capillary, with electrostatic force generated by electric potential of about tens of kV. ESD method is usable in the thin film coating process of organic materials and continuous process as a R2R manufacturing process. Therefore, we experiment the thin films forming of PEDOT:PSS layer and Active layer which consist of the P3HT:PCBM. The result of experiment, organic solar cell using ESD thin film coated method is occurred efficiency of about 1.4%. Also, the case of only used to ESD method in the active layer coating is occurred efficiency of about 1.86% as the applying a spin coating in the PEDOT:PSS layer. We can expect that ESD method is possible for continuous process to manufacture in the organic solar cell or OLED device.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.3
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• pp.27-34
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• 2017

We investigated the feasibility of parylene F usage as an intermediate layer between a polydimethylsiloxane (PDMS) substrate and an Au thin-film interconnect as well as the swelling effect of PDMS substrate on the stretchable deformability of an Au thin film. The 150-nm-thick Au film, which was sputtered on a PDMS substrate without a parylene F layer, exhibited an initial resistance of $11.7{\Omega}$ and an overflow of its resistance at a tensile strain of 12.5%. On the other hand, the Au film, which was formed with a 150-nm-thick parylene F layer, revealed an much improved resistance characteristics: $1.21{\Omega}$ as its initial resistance and $246{\Omega}$ at its 30% elongation state. With swelling of PDMS substrate, the resistance of an Au film substantially decreased to $14.4{\Omega}$ at 30% tensile strain.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.61-64
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• 2003

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. Mg(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure$(PO_3)$ in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $O_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Applied Biological Chemistry
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• v.24 no.4
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• pp.238-244
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• 1981

The thin Layer chromatographic determination of ${\alpha}-solanine $ in potato tuber was investigated. The solanine was extracted with methanol-chloroform mixture (2 : 1, v/v) and precipitated as the crude glycoalkaloid by the addition of ammonium hydroxide. The solanine in the crude precipitate was separated by TLC using a solvent system of 1% $NH_4OH-absolute$ ethanol-chloroform (1:2:2, v/v). The purity of ${\alpha}-solanine $ was confirmed by infrared spectrophotometry. The ${\alpha}-solanine $ separated by TLC was determined at the wavelength of 310nm after coloration with concentrated sulfuric acid-1% paraformaldehyde, with the molar absorptivity of 2,090.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.110-115
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• 2007

A plasma enhanced atomic layer deposition(PEALD) system has been constructed adopting an inductively coupled plasma(ICP) source with an ALD system, and its plasma generation was carried out. Cobalt thin films were deposited on a p-type Si(100) wafer at $230^{\circ}C$. $Co_{2}(CO)_{6}$ was used as a cobalt precursor, $NH_{3}$ as a reactant, and Ar as a carrier and purge gas. The properties of the thin films were investigated using field emission scanning electron microscopy(FESEM) and auger electron spectroscopy(AES). Large amounts of impurities were found in both the ALD film and the PEALD film, however, the amount of impurities in the PEALD film was reduced to about 50 % compared to that in the ALD film. It was found that $NH_{3}$ plasma, very effectively, induces the reaction with carbon in a cobalt precursor.

• Current Research on Agriculture and Life Sciences
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• v.7
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• pp.109-116
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• 1989

This study was carried out to confirm the agent responsible for the antibacterial activity in milk culture or Lactobacillus bulgaricus to extract and purify it. The following results were summarized as followings : The antibacterial agent was extracted from the cultured skim milk with methanol and acetone and was purified by Sephadex G-50 gel filteration and thin layer chromatography on silica gel. The antibacterial substance other than lactic acid was confirmed by turbidimetric technique using the neutralized culture filtrate which inhibited the growth of Bacillus subtilis. The purified agent showed inhibitory activity against Bacillus subtilis, Escherichica coli, Pseudomonas fluorescens Staphylococcus aureus, Proteus vulgaris and Shigells $dysenteria^2$. The agent obtained from thin layer chromatography was free from $H_2O_2$ or lactic acid.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.615-618
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• 2003

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(l00) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and 820 $^{\circ}C$ and the highly condensed ozone gas pressure(PO$_3$) in vacuum chamber was varied between 2.0$\times$10$^{-6}$ and 2.3$\times$10$^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and 795$^{\circ}C$ and single phase of Bi 2201 existed in the lower region than 785 $^{\circ}C$. Whereas, PO$_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with T$_{c}$(onset) of about 90 K and T$_{c}$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as CaCuO$_2$ was observed in all of the obtained films.lms.

• Journal of the Korean Society of Environmental Restoration Technology
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• v.9 no.6
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• pp.143-151
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• 2006

Currently, there are researches about environment-friendly road construction plans led by the Ministry of Construction and Transportation in progress. Therefore, in order to create the revegetation techniques of thin layer-soil combination media hydroseeding measures by actively using native herbs and native woody plants instead of using imported foreign grasses as a concept of sustainable environment-friendly land development, this thesis is going to identify problems that can appear when applying the thin- layer-soil-media hydroseeding measures by the suggested in the "Slope revegetation design and guidelines" proposed by the Ministry of Construction and Transportation, and to propose improvement plans for the problems.To this aim, a seeding mixture selection test was conducted by the goal of slope restoration, and a test group for artificial slope was created. As for a test for June sowing, it was intended to identify appropriate combination quantity by conducting a test that differentiates the combination quantity, and as for a test for September sowing, an artificial slope test was conducted by creating an artificial bank for earth and soil and applying 1~2cm and 3~4cm thickness after differentiating the seed combination volume and slope aspects.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.40-41
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• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)