• Korean Journal of Materials Research
• /
• v.16 no.7
• /
• pp.445-448
• /
• 2006

Highly c-axis oriented ZnO thin films were grown on Si(100)substrates with Zn buffer layers. Effects of the Zn buffer layer thickness on the structural and optical qualities of ZnO thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL) and Atomic force microscopy (AFM) analysis techniques. It was confirmed that the quality of a ZnO thin film deposited by rf magnetron sputtering was substantially improved by using a Zn buffer layer. The highest ZnO film quality was obtained with a Zn buffer layer 110 nm thick. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

• Journal of the Korean Ceramic Society
• /
• v.45 no.1
• /
• pp.30-35
• /
• 2008

In this paper, CdS/Cd(Cu)S thin films and diodes were manufactured via a chemical bath deposition (CBD) process, and the effects of $NH_4Cl$ and TEA(triethylamine) on the properties of the films were examined. The addition of $NH_4Cl$ significantly increased the thickness of the CdS and Cd(Cu)S films, however, the addition of TEA decreased the thickness in both cases slightly. The addition of $NH_4Cl$ along with TEA increased the film thickness more effectively compared to the addition of only $NH_4Cl$. The thickness of the CdS film prepared from an aqueous solution of 0.007 M $CdSO_4$, 1.3 M $NH_4OH$, 0.03 M $SC(NH_2)_2$, 0.0001 M TEA and 0.03 M $NH_4Cl$ was 310 nm. Dark resistivity of the CdS film was $1.2{\times}10^3\;{\Omega}cm$ and the photo resistivity with $500\;W/cm^2$ irradiation of white light was $20{\Omega}cm$. The Cd(Cu)S/CdS thin film diodes prepared by CBD showed good rectifying characteristics.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2006.05a
• /
• pp.156-159
• /
• 2006

In order to design an evaporation system, geometric simulation of film thickness distribution profile is required. In this paper, a geometric modeling algorithm is introduced for process simulation of the evaporating process. The physical fact of the evaporating process is modeled mathematically. Based on the developed method, the thickness of the thin-film layer can be successfully controlled.

• Korean Journal of Materials Research
• /
• v.26 no.8
• /
• pp.438-443
• /
• 2016

We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and $100^{\circ}C$. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.253-254
• /
• 2006

We have manufactured CdS and Cd(Cu)S thin films by chemical bath deposition(CBD) process, and examined the effects of $NH_4Cl$ and TEA. The addition of $NH_4Cl$ remarkably enhanced the film thickness of CdS, however, TEA slightly decreased the film thickness. The thickness of CdS film prepared from the aqueous solution of 0.003 M $CdSO_4$ 0.00008 M $CuSO_4$, 1.3M NH3, 0.03 M $SC(NH_2)_2$ and 0.0009 M $NH_4Cl$ was 210 nm and resistivity of that was $1.2{\times}10^3{\Omega}cm$.

• Journal of Sensor Science and Technology
• /
• v.1 no.2
• /
• pp.117-123
• /
• 1992

$Pt-SnO_{2-x}$ thin film sensing devices has been fabricated by thermal oxidation of stacked Pt-Sn thin film on the heater. The thickness of Sn thin film deposited by thermal evaporation was $4000{\AA}$ and the thickness of Pt deposited by D. C. sputtering on Sn thin film was $14{\sim}71{\AA}$ range. The XRD analysis show that the $Pt-SnO_{2-x}$ thin films are formed by grains with a diameter of about $200{\AA}$ randomly connected and the crystalline phase of the thin films are preferentally oriented in the (110) direction. $Pt-SnO_{2-x}$ thin film device (Pt thickness : $43{\AA}$) to 6000 ppm CO shows the sensitivity of 80% and high selectivity to CO. And the operating temperature and the thermal oxidation temperature of $Pt-SnO_{2-x}$ thin film device with high sensitivity to CO were $200^{\circ}C$ and $500^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.692-695
• /
• 1999

This paper presents annealing characteristics of CrN thin-film strain gauges, which were deposited on glass by DC reactive magnetron sputtering in an argon-nitrogen atmosphere)Ar-(5-~25%)$N_2$. The physical and electrical characteristics of these films investigated with the thickness range 3500$\AA$ of CrN thin films, annealing temperature (100~30$0^{\circ}C$) and annealing time (24-72hr) . The optimized condition of CrN thin-film strain gauges were thickness range of 3500$\AA$ and annealing condition(30$0^{\circ}C$ , 48hr) in Ar-10%$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauge is obtained a high resistivity, $\rho$=1147.65$\Omega$cm a low temperature coefficient of 11.17. And change in resistance after annealing for the CrN thin film were quitely linear and stable.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.13 no.12
• /
• pp.2505-2510
• /
• 2009

The SiOC films were deposited with the variation of flow rate ratios by chemical vapor deposition. It was researched the reason of decreasing the dielectric constant in SiOC film and the relationship between the dielectric constant and the thickness. The thickness of the deposited films tends to in proportion to the refractive index and the sample with the lowest dielectric constant decreased the thickness. The refractive index was decreased after annealing because of the decreasing of the film's thickness by annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.08a
• /
• pp.73-79
• /
• 2002

This study evaporates ZnO layer thickness' differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1,{\varepsilon}_2)$ has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• Journal of the Korean institute of surface engineering
• /
• v.57 no.3
• /
• pp.208-213
• /
• 2024

With the development of industry, miniaturization and densification of semiconductor components are rapidly progressing. Particularly, as demand surges across various sectors, efficiency in productivity has emerged as a crucial issue in semiconductor component manufacturing. Maximizing semiconductor productivity requires real-time monitoring of semiconductor processes and continuous reflection of the results to stabilize processes. However, various unexpected variables and errors in judgment that occur during the process can cause significant losses in semiconductor productivity. Therefore, while the development of a reliable manufacturing system is important, the importance of developing sensor technology that can complement this and accurately monitor the process is also growing. In this study, conducted a basic research on the concept of diagnostic sensors for thickness based on the physical changes of thin films due to etching. It observed changes in resistance corresponding to variations in thin film thickness as etching processes progressed, and conducted research on the correlation between these physical changes and thickness variations. Furthermore, to assess the reliability of thin film thickness measurement sensors, it conducted multiple measurements and comparative analyses of physical changes in thin films according to various thicknesses.