• 융합정보논문지
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• 제12권2호
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• pp.149-156
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• 2022

본 논문에서는 광센서의 주요 구성요소인 도체를 상압플라즈마 공정 기술을 이용하여 티타늄(Ti: Titanium) 박막을 형성하고자 하였다. 이를 위해 기존의 상압플라즈마 장비를 개조하였으며, CF4 가스를 이용하여 sputter용 4인치 크기의 Ti 타겟을 식각하여 그 부산물이 글라스 소재의 샘플에 코팅되는 방법을 이용하였다. 이러한 부산물이 약 2cm까지 형성되었으며, 색깔에 따라 총 15영역으로 구분할 수 있었다. SEM(Scanning Electron Microscopy) 및 EDS(Energy Dispersive Spectrometer), 4-point probe 장비를 이용하여 표면 형상 및 구성 원소를 분석하였으며, 또한, 전기적인 특성을 측정하였다. 증착률 및 Ti 비율을 고려한다면, 타겟에서 약 4.5mm에서 5mm 정도에 샘플을 위치시켜 코팅하면 전체적으로 균일한 박막이 형성되지만, 이 박막에 상당량의 플루오린이 함유되어 있어 박막의 전기적인 특성에 큰 영향을 미치는 것을 알 수 있었다. 따라서 플루오린을 제거하거나 증착시 최소화하는 방안에 대해 추가 실험 및 연구를 진행해야 할 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.782-784
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.370-374
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.128-132
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• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.705-710
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• 2003

MoO$_3$thin films were deposited on electrode of alumina substrates in $O_2$atmosphere by RF reactive sputtering using molybdenum metal target. The deposition was performed at 30$0^{\circ}C$ with 350 W of a forward power in an Ar-O$_2$atmosphere. The working pressure was maintained at 3$\times$10$^{-2}$ torr and all deposited films were annealed at 50$0^{\circ}C$ for 5 hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by using a XRD. To investigate gas sensing characteristics of the doped MoO$_3$thin film, Co, Ni and Pt were used as dopants. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as H$_2$, NH$_3$and CO at optimum working temperature. Co-doped MoO3 thin film shows the maximum 46.8 % of sensitivity in NH$_3$ and Ni-doped MoO$_3$thin film exhibits 49.7 % of sensitivity in H$_2$.

• 센서학회지
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• 제23권2호
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• pp.94-98
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• 2014

Aluminum nitride (AlN) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 25~75% $N_2$ /Ar. The characterization of film properties were performed using surface profiler, X-ray diffraction, X-ray photoelectron spectroscopy(XPS), and pressure-voltage measurement system. The deposition rates of AlN films were decreased with increasing the $N_2$ concentration owing to lower mass of nitrogen ions than Ar. The as-deposited AlN films showed crystalline phase, and with increasing the $N_2$ concentration, the peak of AlN(100) plane and the crystallinity became weak. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. But in the case of 50% $N_2$ /Ar condition, the peak of (002) plane, which is determinant in pressure sensing properties, appeared. XPS depth profiling of AlN/TiN/SUS430 revealed Al/N ratio was close to stoichiometric value (45:47) when deposited under 50% $N_2/Ar$ atmosphere at room temperature. The output signal voltage of AlN sensor showed a linear behavior between 26~85 mV, and the pressure-sensing sensitivity was calculated as 7 mV/MPa.

• 센서학회지
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• 제9권2호
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• pp.90-95
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• 2000

$Si_3N_4/SiO_2/Si_3N_4$/Si 판위에 MgO 박막을 성장하여 MgO 단결정과 결정배향성이 유사한 초전형 적외선 센서용 기판을 제작하였다. RF 마그네트론 스퍼터링법으로 MgO 박막을 성장하였고, 그 위에 Pt 하부전극과 PLT 박막을 성장시킨 후 c축 배향성을 조사하였다. $500^{\circ}C$의 기판온도와 30 mTorr의 분위기 압력 및 160 W의 RF power에서 성장된 MgO 박막이 단결정 MgO가 가지는 배향성 정도의 우수한 a축 배향성을 보였고, 그 위에 성장된 PLT 박막은 MgO 단결정 기판위에 성장된 것과 거의 회절강도 변화가 유사한 c축 배향성을 보였다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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• pp.390-390
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• 2000

This research is the development of a skin-type tactile sensor for service robot using PVDF film for the detection of the contact state. The Prototype of the tactile sensor which has 8$\times$8 taxels was fabricated using PVDF film In the fabrication procedure of the sensor, the electrode patterns and common electrode of the thin conductive tape were attached to the both side of the 28 micro meter thickness PVDF film using conductive adhesive. The sensor was covered with polyester film for insulation and attached to the rubber base for making stable structure. The signals of a contact pressure to the tactile sensor were sensed and processed in the DSP system in which the signals were digitized and filtered. Finally, the signals were integrated for taking the force profile. The processed signals of the output of the sensor were visualized in PC, the shape and force distribution of the contact object were obtained. The reasonable performance for the detection of contact state was verified through the experiment.

• 센서학회지
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• 제13권3호
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• pp.252-257
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• 2004

$Y_{2}O_{3}:Eu^{3+}$ thin films have been grown on $Al_{2}O_{3}$(0001) substrates by a pulsed laser deposition (PLD) method. The phosphor thin films were deposited at a substrate temperature of 500, 600, and $700^{\circ}C$ under the oxygen pressure of 100, 200, and 300 mTorr. The crystallinity, surface roughness and photoluminescence of the films are highly dependent on the substrate temperature and oxygen pressure. The films grown on $Al_{2}O_{3}$(0001) substrate even under the different substrate temperatures and oxygen pressures exhibited (222) preferred orientation. The luminescent spectra exhibited strong luminescence of ${^{5}D_{0}}-{^{7}F_{2}}$ transition within $Eu^{+3}$ peaking at 612 nm. The crystallinity and luminescence intensity of the films have been improved as the substrate temperature increasing. With increase of oxygen pressure from 50 to 300 mTorr, the crystallinity of the films has been uniformly decreased. The photoluminescence intensity and surface roughness have similar behaviors as a function of oxygen pressure. At 200 mTorr, both photoluminescence intensity and surface roughness show a maximum.

• 한국표면공학회지
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• 제32권1호
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• pp.3-9
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• 1999

Pt thin film of about 7000$\AA$ thickness was deposited on the alumina substrate using DC Magnetron Sputter and the characteristics of the film for temperature sensor were investigated. When film of about 7000$\AA$ thickness was deposited at working gas pressure of $2.0{\times}10^{-3}$torr, sputtering power of 50W, substrate temperature of $350^{\circ}C$(Ts), sheet resistance(Rs), resistivity($\rho$) and temperature coefficient of resistivity(TCR) of the film were respectively 0.39$\Omega$/$\square$, 27.60$\mu\Omega$-cm and $3350 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min in hydrogen ambient, Rs, $\rho$ and TCR were respectively 0.236$\Omega$/$\square$, 15.18$\mu\Omega$-cm and 3716 ppm/$3716 ppm/^{\circ}C$. When working gas of 15sccm oxygen and 100sccm Argon were used, Rs, $\rho$ and TCR were respectively 0.335$\Omega$/$\square$, 22.45$\mu\Omega$-cm and $3427 ppm/^{\circ}C$. When the film was annealed at $1000^{\circ}C$ for 240min, Rs, $\rho$and TCR were respectively 0.224/$\Omega$$\square$, 14$\mu\Omega$-cm and $3760 ppm/^{\circ}C$ and the characteristics of the film were much improved.