• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.70-70
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• 1999

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 춘계학술발표회
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• pp.119-120
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• 1997

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.74-74
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• 1994

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.796-799
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• 2002

BSCCO thin films are fabricated via a co-deposition process at an ultra-low growth rate using ion beam sputtering. The sticking coefficient of Bi element exhibits a characteristic temperature dependence. This temperature dependence of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$_2$O$_3$.

• 한국수소및신에너지학회논문집
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• 제12권3호
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• pp.201-209
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• 2001

The change of optical transmittance of $PdH_x$ thin film due to hydrogen concentration change was measured at room temperature. Pd film($312{\AA}$ thick) was made by thermal evaporation on glass substrate. Hydrogen absorption and desorption cycling effect on optical transmittance was measured 4 times in the pressure range between 0 and 640 torr. Ratio of optical transmittance to the change of ln pressure(torr) increases with increasing number of hydrogen A-D cyclings in the ${\beta}$ phase.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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• pp.156-159
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• 2006

In order to design an evaporation system, geometric simulation of film thickness distribution profile is required. In this paper, a geometric modeling algorithm is introduced for process simulation of the evaporating process. The physical fact of the evaporating process is modeled mathematically. Based on the developed method, the thickness of the thin-film layer can be successfully controlled.

• Transactions on Electrical and Electronic Materials
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• 제9권6호
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• pp.247-250
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• 2008

Hafnium dioxide ($HfO_2$) thin film as a gate dielectric for organic thin film transistors is prepared by plasma enhanced atomic layer deposition (PEALD). Mostly crystalline of $HfO_2$ film can be obtained with oxygen plasma and with water at relatively low temperature of $200^{\circ}C$. $HfO_2$ was deposited as a uniform rate of $1.2\;A^{\circ}$/cycle. The pentacene TFT was prepared by thermal evaporation method with hafnium dioxide as a gate dielectric. The electrical properties of the OTFT were characterized.

• 한국식품과학회지
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• 제24권4호
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• pp.301-305
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• 1992

원심식 박막증발기를 이용해 마늘 착즙을 농축한 경우 가열 매체 및 증발온도가 농축비, 총괄열전달계수, 증발속도 등에 대해 미치는 영향에 대하여 조사하였다. 마늘착즙의 급액속도와 증발온도가 일정할 때 가열증기의 온도가 높을수록 농축비, 증발속도, 및 총괄열전달계수는 증가하였으나, 가열증기의 온도가 $110^{\circ}C$ 이상이 되면 이들 값의 증가가 현저하게 둔화되었다. 증기온도 $100^{\circ}C$ 이하에서는 증발온도가 증가함에 따라 농축비, 증발속도, 총괄열전달계수는 감소하였다. 그러나 그 이상의 온도에서 어느 일정 증발온도까지는 이들 값이 증가하다가 다시 감소하는 경향을 나타내었다. 급액속도가 일정할 때 증기의 온도와 증발온도와의 차이가 $70^{\circ}C$가 될 때까지는 농축비, 증발속도 및 총괄열전달계수는 모두 증가하였다. 그러나 온도 차이가 $70^{\circ}C$ 이상이 되면 이들 값의 증가가 둔화되거나 감소하였다.

• 한국전기전자재료학회논문지
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• 제26권12호
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• pp.888-893
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• 2013

In this paper, we prepared $Cu(In,Ga)Se_2$ thin films by using co-evaporation method, and analyzed the properties of the thin films. During the thin film preparation process, we confirmed $InGaSe_2$ phase was formed at $400^{\circ}C$ in first stage, and also confirmed the thin films showed the vacancy decrease. In second and third stage, we confirmed the density increase of crystalline structure at over $480^{\circ}C$ and the formation of $Cu(In_{0.7}Ga_{0.3})Se_2$ phase. As the result of SEM and XRD analysis of the films which were before and after heat-treated, we confirmed the disappearance of $Cu_2Se_2$ and the formation of $Cu(In_{0.7}Ga_{0.3})Se_2$ single phase after the heat-treatment, We, therefore, confirmed the heat-treatment did not affect the absorbency spectra of the thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술대회 논문집
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• pp.17-17
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• 2010

Polycrystalline $CuInS_2$ thin films were performed from S/In/Cu Stacked elemental layer(SEL) method with post annealing. In thin method, the thin films were annealed in Vacuum of $10^{-3}$ torr or in S ambient. $CuInS_2$ thin films were manufctured by using the evaporation and the annealing with vacuum quartz furnace of sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate the annealing temperature and characteristics thereof were investigated. The physical properties of the thin film were investigated under various fabrication conditions including the substrate temperature annealing time by XRD, FE-SEM, and Hall measurement system.