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http://dx.doi.org/10.4313/JKEM.2013.26.12.888

A Study on Cu(In,Ga)Se2 Thin Film with Substrate Temperature Change  

Park, Jung-Cheul (Department of Electrical Engineering, Gachon University)
Chu, Soon-Nam (Department of Electrical Engineering, Gachon University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.12, 2013 , pp. 888-893 More about this Journal
Abstract
In this paper, we prepared $Cu(In,Ga)Se_2$ thin films by using co-evaporation method, and analyzed the properties of the thin films. During the thin film preparation process, we confirmed $InGaSe_2$ phase was formed at $400^{\circ}C$ in first stage, and also confirmed the thin films showed the vacancy decrease. In second and third stage, we confirmed the density increase of crystalline structure at over $480^{\circ}C$ and the formation of $Cu(In_{0.7}Ga_{0.3})Se_2$ phase. As the result of SEM and XRD analysis of the films which were before and after heat-treated, we confirmed the disappearance of $Cu_2Se_2$ and the formation of $Cu(In_{0.7}Ga_{0.3})Se_2$ single phase after the heat-treatment, We, therefore, confirmed the heat-treatment did not affect the absorbency spectra of the thin films.
Keywords
Co-evaporation method; $Cu(In,Ga)Se_2$; Vacancy; Absorbency spectra;
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