• 한국진공학회지
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• 제5권1호
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• pp.48-53
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• 1996

We present a microscopic description for generation of 1/f noise in interfaces between cobalt thin film and silicon substrate. Along with surface resistance measurements and transmission electron diffraction observations. 1/f noise power spectral density has been measured for the interfacial structures at the liquid nitrogen temperature . The cobalt films have been deposited by the electron-beam evaporation technique onto p-type (100) silicon in the high vacuum condition. The measured noise power spectral density shows highest magnitude near the structural transition and metallization transition region. The noise magnitude rapidly decreased after the cobalt silicide nucleation. The noise parameter is concluded to be originated form the structural fluctuations.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.193-197
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• 2000

BSCCO thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below 73$0^{\circ}C$ and decreases linearly with temperature over 73$0^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, Bi$_2$O$_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

• 반도체디스플레이기술학회지
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• 제9권3호
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• pp.23-27
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• 2010

We prepared Al doped ZnO thin film as a top electrode on a glass substrate with a deposited $Alq_3$ for the top emission organic Light emitting device (TEOLED) with facing target sputtering (FTS) method and radio-frequency (RF) sputtering method, respectively. Before the deposition of AZO thin film, we evaporated the $Alq_3$ on glass substrate by thermal evaporation. And we evaluated the damage of organic layer. As a result, PL intensity of $Alq_3$ on grown by FTS method showed higher than that of grown by RF sputtering method, so we found that the FTS showed the lower damage sputtering than RF sputtering. Therefore, we can expect the FTS method is promising the low-damage sputtering system that can be used as a direct sputtering on the organic layer.

• Membrane and Water Treatment
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• 제13권3호
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• pp.139-145
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• 2022

Development in advanced separation processes leads to the significant advancement in polymeric membrane preparation methodology. Therefore, present research investigated the preparation and characterization of cellulose acetate membrane by phase inversion separation method to determine optimized operating parameters. Prepared CA membrane's performance was been analyzed in terms of % rejection and flux. Investigation was conducted to study effect of different parameters such as polymer concentration, evaporation rate, thickness of film, coagulation bath properties, temperature of polymer solution and of the coagulation bath etc. CA membrane was fabricated by taking polymer concentration 10wt% and 11wt% with zero second evaporation time and varying film thickness over non-woven polyester fabric. Effect of coagulation bath temperature (CBT) and casting solution temperature were also been studied. The experimental results from SEM showed that the surface morphology had been changed with polymer r concentration, coagulation bath and casting solution temperature, etc. Lower polymer concentration leads to lower precipitation time giving porous membrane. The prepared membrane was tested for advanced waste water treatment of relevant effluent stream in pilot plant to study flux and rejection behavior of the membrane.

• 마이크로전자및패키징학회지
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• 제8권2호
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• pp.31-36
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• 2001

Plasma Polymerization를 이용하여 Teflon-like 불화 유기 박막을 Si, $SiO_2$, Al, TEOS 위에 증착하였다. Difluoromethane $(CH_2F_2$)에 Ar, $O_2$, 그리고 $CH_4$를 첨가하여 첨가 가스에 따른 불화 유기 박막의 특성을 평가하였다. 각각의 첨가가스에 대하여 압력, 온도, 그리고 첨가가스의 비율을 변화시켜 박막을 증착하여 정접촉각 통한 표면의 친수성 (hydrophilicity)과 소수성(hydrophobicity) 정도를 관찰하였다. Ar을 첨가한 경우 Ar 첨가량과 power의 증가에 따라 정접촉각의 감소를 관찰하였다. 그러나 증착압력이 증가함에 따라 정접촉각이 증가하였다. Ar 첨가시 2 Torr이상의 증착압력에서 분말형태의 초소수성 불화 유기박막을 얻을 수 있었다. $O_2$를 첨가한 경우, $O_2$의 첨가량과 증착압력이 증가함에 따라 정접촉각은 감소하였다. 약 100W까지의 power에서는 정접촉각은 일정하였지만 power의 증가에 따라 정접촉각은 감소하여 200W에서는 천수성표면을 얻을 수 있었다. $CH_4$를 첨가하여 불화유기박막을 증착하였을 경우 $CH_4/CH_2F_2$비율이 5까지 급격한 증가를 나타내었고, 비율이 5이상인 경우에서는 일정한 정접촉각을 나타내었다. 화학기상증착에 의해 제조된 박막보다 plasma polymerization으로 제작된 불화유기박막이 히스테리시스(hysteresis)가 낮은 불화유기박막을 형성하였다.

• 한국진공학회지
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• 제6권1호
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• pp.69-76
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• 1997

순간 증착법으로 $Bi_{0.5}Sb_{1.5}Te_3$(p형)와 $Bi_2Te_{2.4} Se_{0.6}$(n형) 박막을 제조하여 두께와 어닐 링 조건에 따른 Seebeck 계수, 전기전도도, carrier 농도 및 이동도, 열전도도, 성능지수의 변화 등 열-전기적 특성을 조사하였다. 473K에서, 1시간 진공 열처리한 결과 p형과 n형의 성능지구는 각각 $1.3{\times}10^{-3}K^{-1}$ 및 $0.3{\times}10^{-3}K^{-1}$으로 향상되었으며 두께에 크게 의존하지 않았 다. 이런 성질을 갖는 열전 박막을 소자화한 박막 온도 센서를 유리와 Teflon기판 위에 제 조하였으며, 이들의 온도 변화에 대한 열기전력, 민감도 및 시간 상수 등 센서 특성을 측정 하였다. p 및 n형의 leg 폭 1mm$\times$길이 16mm인 박막 온도 센서의 경우, Teflon 기판일 때 좋은 성능을 나타내었으며, 민감도는 2.91V/W, 시간 상수는 28.2초이었다.

• 한국재료학회지
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• 제25권1호
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• pp.54-59
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• 2015

Glancing angle deposition (GLAD) is a powerful technique to control the morphology and microstructure of thin film prepared by physical vapor deposition. Chromium (Cr) thin films were deposited on a polymer substrate by a sputtering technique using GLAD. The change in thickness and Vickers microhardness for the samples was observed with a change in the glancing angle. The adhesion properties of the critical load (Lc) by a scratch tester for the samples were also measured with varying the glancing angle. The critical load, thickness and Vickers microhardness for the samples decreased with an increase in the glancing angle. However, the thickness of the Cr thin film prepared at a $90^{\circ}$ glancing angle showed a relatively large value of 50 % compared to that of the sample prepared at $0^{\circ}$. The results of X-ray diffraction and scanning electron microscopy demonstrated that the effect of GLAD on the microstructure of samples prepared by sputter technique was not as remarkable as the samples prepared by evaporation technique. The relatively small change in thickness and microstructure of the Cr thin film is due to the superior step-coverage properties of the sputter technique.

• 센서학회지
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• 제8권3호
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• pp.274-282
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• 1999

암모니아가스에 민감한 In이 도핑된 ZnO(ZnO:In) 박막을 In 박막($100\;{\AA}$) 및 ZnO박막($3000\;{\AA}$)의 연속적인 증착과 열처리공정을 통하여 제조하였다. 기판은 $1000\;{\AA}$의 산화막이 열적으로 성장되어 있는 Si 기판을 사용하였다. In/ZnO 박막 이중층의 열처리온도에 따른 구조적 및 전기적 특성을 X-선회절기, 주사전자현미경 및 4점측정시스템을 통하여 조사하였다. 이들 막에 대하여 열처리온도에 따른 암모니아가스에 대한 감도, 선택성 및 시간응답특성을 구하였다. 열처리온도 $400^{\circ}C$, 동작온도 $300^{\circ}C$에서 100 ppm의 암모니아가스를 주입한 결과 140%의 최대감도를 나타내었으며 CO, $NO_x$ 가스에 대한 감도는 아주 낮은 것으로 나타났다.

• 한국결정성장학회지
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• 제12권4호
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• pp.184-189
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• 2002

초음파 분무 MOCVD법에 의한 $(Pb_{0.91}La_{0.09})(Zr_{0.65}Ti_{0.35})O_3$(PLZT) 박막의 제조와 광학적, 전기적 특성을 조사하였다. Pb의 휘발성을 고려하여 0.2M의 precursor에 Pb를 5 wt%, 10 wt%과잉 첨가하였다. ITO-coated glass 기판 위에 산소분위기에서 30분 동안 증착한 후 in-situ 상태의 RTA (rapid thermal annealing) 방식으로 열처리를 하였다. 단일 perovskite상의 결정화 온도는 $600^{\circ}C$였다. Pb를 10 wt% 과잉 첨가한 박막의 최대 광투과율은 520nm에서 약 84%로 광학적 특성이 우수하였으며, 유전상수는 약 308의 값을 가졌고, 누설전류는 Pb를 0, 5 wt% 과잉 첨가한 PLZT 박막보다 낮은 값을 가졌다.

• Journal of Information Display
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• 제4권2호
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• pp.1-6
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• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.