• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.72-72
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• 2011

Recently, Zinc oxide (ZnO) nano-structures have been received attractive attention because of their outstanding optical and electrical properties. It might be a promising material considered for applications to photonic and electronic devices such as ultraviolet light emitting diode, thin film transistor, and gas sensors. ZnO nano-structures can be typically synthesized by the VLS growth mode and self-assembly. In the VLS growth mode using various growth techniques, the noble metal catalysts such as Au and Sn were used. However, the growth of ZnO nano-structures on nano-crystalline Au seeds using radio frequency (RF) magnetron sputtering might be explained by the profile coating, i.e. the ZnO nano-structures were a morphological replica of Au seeds. Ga doped ZnO (ZnO:Ga) nano-structures using this concept were synthesized and characterized by XRD, AFM, SEM, and TEM. We found that surface morphology is drastically changed from initial islands to later sun-flower typed nano-structures. We will present the structural evolution of ZnO:Ga nano-structures with increasing the film thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).

• Macromolecular Research
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• v.10 no.2
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• pp.75-79
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• 2002

Organic materials have considerable attention as active semiconductors for device applications such as thin-film transistors (TFTs) and diodes. Pentacene is a p-type organic semiconducting material investigated for TFTs. In this paper, we reported the morphological and electrical characteristics of pentacene TFT films. The pentacene transistors showed the mobility of 0.8 $\textrm{cm}^2$/Vs and the grains larger than 1 ${\mu}{\textrm}{m}$. Deep-level transient spectroscopy (DLTS) measurements were carried out on metal/insulator/organic semiconductor structure devices that had a depletion region at the insulator/organic-semiconductor interface. The duration of the capacitance transient in DLTS signals was several ten of seconds in the pentacene, which was longer than that of inorganic semiconductors such as Si. Based on the DLTS characteristics, the energy levels of hole and electron traps for the pentacene films were approximately 0.24, 1.08, and 0.31 eV above Ev, and 0.69 eV below Ec.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.170-170
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• 2006

[ ${\pi}-conjugated$ ] organic and polymeric semiconductors are receiving considerable attention because of their suitability as an active layer for electronic devices. An organic inverter with a full swing and a high gain can be obtained through the good qualities of the transfer characteristics of organic thin-film transistors (OTFTs); for example, a low leakage current, a threshold voltage ($V_{th}$) close to 0 V, and a low sub-threshold swing. One of the most critical problems with traditional organic inverters is the high operating voltage, which is often greater than 20 V. The high operating voltage may result in not only high power consumption but also device instabilities such as hysteresis and a shift of $V_{th}$ during operation. In this paper, low-voltage and little-hysteresis pentacene OTFTs and inverters in conjunction with PEALD $Al_{2}O_{3}\;and\;ZrO_{2}$ as the gate dielectrics are demonstrated and the relationships between the transfer characteristics of OTFT and the voltage transfer characteristics (VTCs) of inverter are investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.2
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• pp.85-89
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• 2021

High reliability thin film transistors are important factors for next-generation displays. The reliability of transparent a-IGZO semiconductors is being actively studied for display applications. A plasma treatment can fill the oxygen vacancies in the channel layer and the channel layer/insulating layer interface so that the device can work stably under a bias voltage. This paper studies the effect of plasma treatment on the performance of a-IGZO TFT devices. The influence of different plasma gases on the electrical parameters of device and its working reliability are reviewed. The article mentions argon, fluorine, hydrogen and several ways of processing in the atmosphere. Among these methods, F (fluorine) plasma treatment can maximize equipment reliability. It is expected that the presented results will form a basis for further research to improve the reliability of a-IGZO TFT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.296-300
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• 2002

Thin films of Hydrogenated amorphous carbon(a-C:H) are generally exhibited by high electrical resistivities from 10$^2$ to 10$\^$16/ Ω$.$cm, resulting in an interesting material for high power, high temperature MIS devices applications. The hydrogenated amorphous carbon(a-C:H) films were deposited on silicon and glass using an rf plasma enhanced CVD method. The resultant film properties were evaluated in the respect of material based on r.f. power variation. The hydrogenated amorphous carbon(a-C:H) films of thickness ranging from 30 to 50 m were deposited at the pressure of 1 ton with the mixture of methane and hydrogen. We have used rf-IR( courier transform IR) and AFM(Atomic force microscopy) for determining physical properties and current-voltage(I-V) measurement for electrical Properties.

• KSTLE International Journal
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• v.8 no.2
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• pp.26-28
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• 2007

Si(100) surfaces were topographically modified i.e. the surfaces were patterned at micro-scale using photolithography and DRIE (Deep Reactive Ion Etching) fabrication techniques. The patterned shapes included micro-pillars and microchannels. After the fabrication of the patterns, the patterned surfaces were chemically modified by coating a thin DLC film. The surfaces were then evaluated for their friction behavior at micro-scale in comparison with those of bare Si(100) flat, DLC coated Si(100) flat and uncoated patterned surfaces. Experimental results showed that the chemically treated (DLC coated) patterned surfaces exhibited the lowest values of coefficient of friction when compared to the rest of the surfaces. This indicates that a combination of both the topographical and chemical modification is very effective in reducing the friction property. Combined surface treatments such as these could be useful for tribological applications in miniaturized devices such as Micro-Electro-Mechanical-Systems (MEMS).

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.1-5
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• 2020

By adapting black body leadflame and thin film type Green A filter, we successfully demonstrated night vision imaging system (NVIS) Green A compatible LED. Fabricated NVIS compatible LEDs show small form factor compared to that of commercialized NVIS compatible LED. Especially, NVIS radiance and chromaticity of MIL-STD-3009 specification can be satisfied simultaneously and easily by controlling the color temperature of the white LED as well as the concentration of the Green A dye and the thickness of the Green A filter. The optimal dye concentration of the NVIS Green A filter is expected to be about 1 wt%. The results of this study are expected to contribute to miniaturization, weight reduction and localization of avionic display and lighting devices.

• Journal of Information Display
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• v.11 no.4
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• pp.160-164
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• 2010

Organic light-emitting devices (OLEDs) have shown superior characteristics and are expected to dominate the nextgeneration flat-panel displays. Active-matrix organic light-emitting diode (AMOLED) displays, however, have stringent demands on the performance of the backplane. In this paper, the development of thin-film transistors (TFTs) based on indium gallium zinc oxide (IGZO) on both Gen 1 and 6 glasses, and their decent characteristics, which meet the AMOLED requirements, are shown. Further, several display prototypes (e.g., 2.4" AMOLED, 2.4" transparent AMOLED, and 32" AMLCD) using IGZO TFTs are demonstrated to confirm that they can indeed be strong candidates for the next-generation TFT technology not only of AMOLED but also of AMLCD (active-matrix liquid crystal display).

• Journal of the Korean Magnetics Society
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• v.8 no.2
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• pp.99-110
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• 1998

MR head technology from the perspective of read sensor evolution was reviewed. AMR sensors have been developed for last two decades and successfully employed into information storage devices such as disk drives. Development of manufacturable GMR sensors is of emerging technological interest because GMR sensors can further meet the need of ultrahigh recording density. In this review, the mechanisms, materials systems, operating principles of both AMR an GMR sensors, and the head structures were discuseed. Constructing GMR heads with ultrathin sensor materials and complex topographical structures demands unique fabrication and design challenges. The commercialization of GMR heads can only be realized by the succesful implementations of high performance materials, advanced thin film processes, and stable head design.