• 한국세라믹학회지
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• 제36권2호
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• pp.116-121
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• 1999

MgO 단결성 (100) 기판 위에 0.5 wt% Nb 첨가된 전기전도성의 SrTiO3 (Nb:STO) 박막을 Pulsed Laser Deposition 법으로 제조하였다. 산소압력, 타겟과 기판거리, 기판온도, 박막증착시간 등의 박막형성 조건을 다양하게 변화시켜 Nb:STO박막의 격자상수와 박막두께의 변화를 조사하였다. $700^{\circ}C$에서 제작한 0.5 wt% Nb doped SrTiO3 박막의 배향성은 산소분압변화에 따라(100), (110)과 (111)배향이 관찰되었고, 박막제조시의 산소분압이 79.8 Pa로 증가됨에 따라 격자상수는 감소하여 벌크값인 0.390 nm에 근접하였다. 증착시간증가에 따른 박막의 두께는 증착시간에 비례하여 증가하였고, 격자상수의 변화는 거의 없었다. 타겟과 기판사이의 거리가 멀어짐에 따라 박막의 두께는 감소하였으나, 격자상수에는 큰 변화가 없었고 박막두께분포의 균일성이 향상되었다.

• 한국재료학회지
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• 제17권9호
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• pp.475-479
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• 2007

Pulsed laser deposition was utilized to grow MnS thin films on c-sapphire substrate using a KrF excimer laser at growth temperatures that ranged from room temperature to $700^{\circ}C$. The results of X-ray diffraction (XRD) and UV-visible spectroscopy were employed to investigate the structural and optical properties of the MnS films. While the growth rate decreased as $T_s$ increased, the overall quality of the film improved. The highest quality MnS film was obtained at $700^{\circ}C$. Variations in the $T_s$ resulted in the MnS films exhibiting different growth mechanisms. The oriented (200) rocksalt MnS film was grown at room temperature. In the case of higher $T_s,\;200{\sim}500^{\circ}C$, the films consisted of mixed phases of rocksalt and wurtzite. The main structure of the films was altered to (111) rocksalt when the temperature was increased to in excess of $600^{\circ}C$. This behavior may very well be the result of elements such as surface energy and atomic arrangement during the growth process. The optical band gap of the obtained ${\alpha}-MnS$ film was estimated to be 3.32 eV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.256-256
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• 2008

We report epitaxial growth of ZnO thin films on (100) single-crystalline $LaAlO_3$ (LAO) substrates using pulsed laser deposition (PLD) at different substrate temperatures (400~$800^{\circ}C$). The structural and electrical properties of the films have been investigated by means of X-ray diffraction (XRD), atomic force microscope (AFM), transmission line method (TLM). The poly-crystalline of $\alpha$- and c-axis oriented ZnO film was formed at lower deposition temperature ($T_s$) of $400^{\circ}C$. At higher $T_s$, however, the films exhibit single-crystalline of $\alpha$-axis orientation represented by ZnO[$\bar{1}11$ || LAO <001>. The electrical properties of ZnO thin films depend upon their crystalline orientation, showing lower electrical resistivity values for $\alpha$-axis oriented ZnO films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.397-398
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• 2005

Ferroelectric Lithium niobate ($LiNbO_3$) thin films are fabricated on $Al_2O_3$(0001) substrate using Pulsed Laser Deposition (PLD). The various deposition conditions such as substrate temperature, oxygen pressure, and post annealing condition are investigated to deposite c-axis oriented $LiNbO_3$ thin films. Highly c-axis oriented thin films are obtained under the conditions of working pressure of 100 mTorr, deposition for 10 min at $450^{\circ}C$, and in-situ annealing for 40 min. The $LiNbO_3$ thin films are chemically etched after electric poling and the etched configurations are studied by scanning electron microscope (SEM).

• 센서학회지
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• 제7권5호
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• pp.372-376
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• 1998

기능성 소자 응용을 위한 다양한 박막을 성장시키기 위하여 PLD(Pulsed Laser Deposition) 장치를 제작 개발하였다. 이 PLD 장치를 이용하여 $NbS_2$ 박막을 $Al_2O_3$(012) 기판과 Si(111) 기판 위에 성장시켰다. 결정성 박막의 성장조건을 조사하기 위하여 기판온도를 실온${\sim}600^{\circ}C$, 타겟의 성분비(S/Nb)를 $2.0{\sim}5.25$로 변화시켰다. XRD 패턴으로부터 기판온도가 $600^{\circ}C$이고 타겟의 성분비가 4.0일 때 c-축 배향을 나타내는 양호한 결정성의 $NbS_2$박막이 성장되었다. Si(111) 기판 위보다 $Al_2O_3$(012) 기판 위에서 보다 양질의 $NbS_2$ 박막이 성장되었음을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.127-130
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• 2005

The properties of phosphorus doped ZnO multilayer thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated by using annealing treatment at various annealing temperature after deposition. The phosphorus doped ZnO multilayer was composed of phosphorus doped ZnO layer and two pure ZnO layers on sapphire substrate. The structural. electrical and optical properties of the ZnOthin films were measured by X-ray diffraction (XRD). Hall measurements and photoluminescence (PL). As the annealing temperature optimized. the electrical properties of the ZnO multilayer showed a electron concentration of $1.56{\times}10^{16}/cm^3$, a resistivity of 17.97 ${\Omega}cm$. It was observed the electrical property of the film was changed by dopant activation effect as thermal annealing process

• 한국세라믹학회지
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• 제41권8호
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• pp.593-598
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• 2004

1 $\mu$m이하의 전고상 리튬 박막전지의 구현을 위해 펄스 레이저 증착법을 이용하여 Pt/TiO$_2$/SiO$_2$/Si 기판위에 LiCoO$_2$정극을 증착온도와 Li/Co 간의 몰 비율을 변화시켜가며 성장시켰다. 특히, Li/Co=1.2의 조성을 갖는 LiCoO$_2$를 50$0^{\circ}C$의 증착온도에서 성장시킬 경우 53 $\mu$Ah/$cm^2$-$\mu$m의 높은 초기 용량값을 가지며 100 싸이클 후에도 67.6%의 용량값을 유지하였다. LiCoO$_2$/Pt/TiO$_2$/SiO$_2$/Si위에 고체 전해질인 (Li, La)TiO$_3$를 비정질상으로 하여 PLD방법으로 낮은 온도대역에서 증착온도를 다양하게 하여 증착하였다. 10$0^{\circ}C$의 증착온도에서 LiCoO$_2$Pt/TiO$_2$/SiO$_2$/Si위에 성장시킨 (Li, La)TiO를 가지고 LiClO$_4$ in PC 안에서 Li anode와 충$.$방전 측정 결과 약 51$\mu$Ah/$cm^2$-$\mu$m의 초기 용량값을 나타내었으며 100싸이클 후에도 90%의 훌륭한 방전용량의 보존력을 나타내었다. 비정질상의 (Li, La)TiO$_3$ 고체 전해질은 전고상 박막전지로의 구현이 가능하다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.391-391
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• 2010

The stability enhancement of Znic oxide thin film transistor deposited by PLD-DBD has been reported here using the bias temperature stress test. Znic oxide (ZnO) thin films were deposited on $SiO_2$/Si (100) by pulsed laser deposition method with and without dielectric barrier discharge (DBD) method. The DBD is the efficient method to adopt the nitrogen ions into the thin films. The TFT characteristics of ZnO TFTs with and without Nirogen (N) doping show similar results with $I_{on/off}$ of $10^5{\sim}10^6$. However. the bias temperature stress (BTS) test of N-doped ZnO TFT with DBD shows higher stability than that of ZnO TFT.

• 센서학회지
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• 제13권3호
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• pp.252-257
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• 2004

$Y_{2}O_{3}:Eu^{3+}$ thin films have been grown on $Al_{2}O_{3}$(0001) substrates by a pulsed laser deposition (PLD) method. The phosphor thin films were deposited at a substrate temperature of 500, 600, and $700^{\circ}C$ under the oxygen pressure of 100, 200, and 300 mTorr. The crystallinity, surface roughness and photoluminescence of the films are highly dependent on the substrate temperature and oxygen pressure. The films grown on $Al_{2}O_{3}$(0001) substrate even under the different substrate temperatures and oxygen pressures exhibited (222) preferred orientation. The luminescent spectra exhibited strong luminescence of ${^{5}D_{0}}-{^{7}F_{2}}$ transition within $Eu^{+3}$ peaking at 612 nm. The crystallinity and luminescence intensity of the films have been improved as the substrate temperature increasing. With increase of oxygen pressure from 50 to 300 mTorr, the crystallinity of the films has been uniformly decreased. The photoluminescence intensity and surface roughness have similar behaviors as a function of oxygen pressure. At 200 mTorr, both photoluminescence intensity and surface roughness show a maximum.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.113.2-113
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• 2002