• Journal of the Korean Ceramic Society
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• v.37 no.6
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• pp.530-536
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• 2000

During the grain growth of the PZT thin films by selective nucleation method using PZT seed, it was found that the grain size was saturated with the annealing temperature. The saturation of grain size was analyzed by the interfacial energy which appeared during the crystallization. The factors affecting the saturation of grain size were found to be the interfacial energy between perovskite phase and pyrochlore phase, and PZT thin film and the bottom Pt electrode. When the ion damage was introduced to the grain-size saturated PZT thin films, further lateral growth was observed. Pt bottom electrode thickness was changed to control the interfacial energy between the PZT thin film and the Pt bottom electrode. When Pt thickness was increased, the grain size was also increased, because the lattice parameter of Pt films was increased with the thickness of the Pt films. The incubation time of nucleation was increased with the amount of the ion damage on the Pt films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.28-31
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• 1994

We have investigated the characterization of $V_2O_{5}$ thin films as a counter electrode for lithium based complementary electrochromic devices. The amorphous $V_2O_{5}$ thin films produces comparatively small changes in transmittance in the visible and near infrared compared to the crystalline $V_2O_{5}$ thin films, while the degradation occurs in a-$V_2O_{5}$ thin films with increasing the cycle life time. As the thickness of $V_2O_{5}$ thin films increases from 100 to 600 nm, the magnitude of transmittance modulation decreases. The crystalline $V_2O_{5}$ thin films with thickness around 1000 have electrochromic properties suitable for counter electrode application in lithium based electrochromic smart windows.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.474-475
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• 2007

The $Sr_{0.8}Bi_{2.2}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The aging properties of SBT capacitor with top electrodes represents a favorable properties in Pt electrode. The dielectric constant and leakage current density with Pt electrode is 340 and $6.81{\times}10^{-10}\;A/cm^2$ respectively. The maximum remanent polarization and the coercive electric field with Pt electrode are $12.40{\mu}C/cm^2$ and 30kV/cm respectively.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.3
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• pp.28-35
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• 2013

Micro electrical discharge machining (EDM) as a non-contact machining process is very effective for micromachining with a thin electrode because of its low machining reaction force. The micro-electrode machining device has the advantage of maintaining high precision through the whole processes and uses a feeding wire in the thin electrode tool manufacturing process. This study describes the design and evaluation of a micro-electrode machining device using optical photo-interrupter. The electrode was fabricated by reverse electrical discharge machining. The performance of designed system was evaluated to measure tension force according to feed speed of wire. This system for micro electrode fabrication proves the feasibility in the micro-EDM process of the micro holes and parts for industrial applications.

• Journal of the Korean Chemical Society
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• v.29 no.2
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• pp.172-177
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• 1985

The semiconducting property of Sb-doped tin oxide thin film electrode was investigated and the electrocatalytic effect of this electrode for $SO_2$ (or sulfite, bisulfite ions) oxidation reaction was studied under various conditions. The anodic oxidation of $SO_2$ at tin oxide thin film electrode commenced at lower potential with increasing pH, and good electrocatalytic effect was shown of $SO_3^=$ oxidation in basic solution. In the acidic solutions the electrocatalytic effect of platinum-or palladium-incorporated tin oxide electrode was found to be due to the sites of Pt or Pd exposed on the electrode surface. The electrocatalytic effect of tin oxide electrode was distinctive from that of Pt-or Pd-containing electrodes.

• Bulletin of the Korean Chemical Society
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• v.29 no.10
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• pp.1983-1987
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• 2008

This study demonstrates the electrochemical conversion of the synthetic procedure of monolayer-protected clusters using a thin toluene layer over an edge plane pyrolytic graphite electrode. A thin toluene layer with a thickness of 0.31 mm was coated over the electrode and an immiscible liquid/liquid water/toluene interface was introduced. The transfer of the tetrachloroaurate ($AuCl_4^-$) ions into the toluene layer interposed between the aqueous solution and the electrode surface was electrochemically monitored. The $AuCl_4^-$ ions initially could not move through into the toluene layer, showing no reduction wave, but, in the presence of the phase transfer reagent, tetraoctylammonium bromide (TOABr), a cathodic wave at 0.23 V vs. Ag/AgCl was observed, indicating the reduction of the transferred $AuCl_4^-$ ions in the toluene layer. In the presence of dodecanethiol together with TOABr, a self-assembled monolayer was formed over the electro-deposited metallic gold surface. The E-SEM image of the surface indicates the formation of a highly porous metallic gold surface, rather than individual nanoparticles, over the EPG electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.694-699
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• 2000

S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions was synthesized by MOD (metalorganic decomposition) method. SBT thin films with 2000$\AA$ thickness were prepared on Ir $O_2$/ $SiO_2$/Si and Pt/Ti/ $SiO_2$/Si substrates using the spin coating process and then investigated the dielectric and electrical properties of them. In the case of using Ir $O_2$bottom electrode the hysteresis loop was saturated at lower temperature than Pt/Ti electrode but the breakdown phenomenon was occurred at low voltage because of the rough surface morphology and porous microstructure of SBT thin films. As the results of the fatigue and imprint characteristics related to the lifetime and reliability of devices after 10$^{10}$ cycles the fatigue rates were about 10% at the Ir $O_2$and Pt/Ti bottom electrodes. Both SBT thin films with Ir $O_2$ and with Pt/Ti bottom electrodes show a slight tendency to imprint after 10$^{9}$ cycles but do not lead to a failure.e.e.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.75-78
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• 2004

$Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ (BET) thin films were deposited on the $LaNiO_3$ (LNO (100))/Si and Pt/Ti/$SiO_2$/Si substrates by the metal-organic decomposition method. Structural and dielectric properties of BLT thin films for the applications in nonvolatile ferroelectric random access memories were investigated. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures $650^{\circ}C$, the BET thinfilms were successfully deposited on LNO bottom electrode and exhibited (001) and (117) orientation. Compared with the Pt electrode films, the BET thin films on the LNO electrode annealed at $650^{\circ}C$ showed better dielectric constantsand remanent polarization. The BET thin films on the LNO electrode for the annealing temperature of $650^{\circ}C$, the remanent polarization Pr and coercive field were $45.6\;C/cm^2$ and 171 kV/cm, respectively.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.33-36
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• 2015

It has increased several decades in the field of Indium Tin Oxide (ITO) transparent thin film, However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials[1]. So far, in order to overcome this disadvantage, we show that a transparent ITO/Ag/i-ZnO multilayer thin film electrode would be more cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report the properties of ITO/Ag/i-ZnO multilayer thin film by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\Box}$ at same visible light transmittance. (minimal point $5.2{\Omega}/{\Box}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.347-350
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• 2001

A typical Mold method is to form a gate electrode, a gate oxide, and emitter tip after fabrication of mold shape using wet-etching of Si substrate. In this study, however, new Mold method using a side wall space structure is used in order to make sharper emitter tip with a gate electrode. Using LPCVD(low pressure chemical vapor deposition), a gate oxide and electrode layer are formed on a Si substrate, and then BPSG(Boro phospher silicate glass) thin film is deposited. After, the BPSG thin film is flowed into a mold as high temperature in order to form a sharp mold structure. Next TiN thin film is deposited as a emitter tip substance. The unfinished device with a glass substrate is bonded by anodic bonding techniques to transfer the emitters to a glass substrate, and Si substrate is etched using KOH-deionized water solution. Finally, we made sharp field emitter array with gate electrode on the glass substrate.