• 통합자연과학논문집
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• 제2권4호
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• pp.289-292
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• 2009

Perchlorosilanes are useful precursors for the synthesis of hydrosilanes for the fabrication of electronic devices such as silicon thin-film transistors and silicon nanoparticles. For this solution process, requirements of precursors applicable to solution process are relatively low volatile and soluble in common organic solvents. In this work, the decaphenylcyclopentasilane has been obtained from the reaction of the lithium wire and dichlorodiphenylsilane. The reaction of decaphenylcyclopentasilane with lewis acid catalyst, HCl/$AlCl_3$, gives the perchlorocyclopentasilane. Decaphenylcyclopentasilane exhibits an unusual optical property. Its optical property was characterized by UV-vis and fluorescence spectroscopy. Absorption wavelength maxima for the decaphenylcyclopentasilane was 272 nm. Decaphenylcyclopentasilane displayed an emission band at 741 nm with excitation wavelength of 272 nm.

• Journal of Digestive Cancer Research
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• 제11권2호
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• pp.93-98
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• 2023

Ampullary tumor is a rare disease whose prevalence rate has increased gradually in recent years with the increase in endoscopic examinations. Ampullary lesions are observed via endoscopy, and biopsy is done to determine whether such lesions are adenomas or carcinomas. Endoscopic papillectomy is performed on ampullary adenomas without intraductal lesions. Before the procedure, bleeding tendencies and pancreatitis are assessed, and the lesion is resected using a high-frequency wave and a thin wire snare. Thereafter, pancreatic duct stent insertion or clipping of the resection site is performed to prevent postprocedural pancreatitis. Although 47-93% of the patients achieve complete endoscopic papillary resection, the recurrence rate is 5-31%. Hence, regular follow-up via endoscopy is required.

• 한국재료학회지
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• 제24권9호
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• pp.443-450
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• 2014

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a $NiCl_2$ environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at $200^{\circ}C$. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at $730^{\circ}C$ for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of $NiSi_2$ precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to $1{\times}10^{18}cm^{-3}$. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were $85cm^2/V{\cdot}s$ and 1.23 V/decade at $V_{ds}=-3V$, respectively. The off current was little increased under reverse bias from $1.0{\times}10^{-11}$ A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.

• 한국전산구조공학회논문집
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• 제20권3호
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• pp.287-292
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• 2007

일반적으로 고전적인 탄성이론에서 매크로 스케일의 구조물의 물성은 구조물의 사이즈에 영향을 받지 않는다. 그 이유는 구조물 전체 체적에 대한 표면의 비율이 매우 작기 때문에 표면의 효과를 무시할 수 있기 때문이다. 그러나, 구조물 전체의 부피에 대한 표면의 비율이 커지게 되면 표면의 효과가 매우 중요한 역할을 하게 되며 지배적으로 나타나게 된다. 특히 나노 박막이나 나노 빔 등 나노 스케일의 구조물에서는 표면효과의 영향을 반드시 고려하여야만 한다. 분자 동역학 시뮬레이션은 이러한 나노 스케일의 구조물 역학적 해석을 위해서 그간 사용되어 온 일반적인 방법이었으나, 과도하게 요구되는 계산시간과 전산자원의 한계로 인해 여전히 수 나노 초 동안에 $10^6{\sim}10^9$개의 원자들에 대한 시뮬레이션이 가능한 정도이다. 따라서 실제적으로 MEMS/NEMS 분야에서 사용되는 서브마이크 스케일에서 마이크로 스케일의 구조물의 분자동역학 시뮬레이션을 통한 해석은 가능하나 설계를 목적으로 했을 때는 현실적이지 못하다. 따라서 본 연구에서는 이러한 분자 동역학 시뮬레이션 기법의 단점을 보완하고자 나노 스케일의 매우 작은 구조물에서 지배적으로 나타나는 표면효과를 고려할 수 있는 연속체 기반의 모델을 제시하고자 한다. 특히 본 논문에서는 박막구조물의 해석을 위하여 고전적인 Kirchhoff 평판이론을 바탕으로 표면효과를 고려할 수 있도록 하는 연속체 모델을 제안하고 이를 바탕으로 유한요소해석을 수행하여 그 해석 결과를 분자 동역학 시뮬레이션 결과와 비교하였다.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2010년도 춘계학술발표대회 초록집
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• pp.51-51
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• 2010

Recently just as in the automobile industry, shipbuilders also try to reduce material consumption and weight in order to keep operating costs as low as possible and improve the speed of production. Naturally industry is ever searching for welding techniques offering higher power, higher productivity and a better quality. Therefore it is important to have a details research based on the various welding process applied to steel and other materials, and to have the ability both to counsel interested companies and to evaluate the feasibility of implementation of this process. Submerged-arc welding (SAW) process is usually used about 20% of shipbuilding. Similar to gas metal arc welding(GMAW), SAW involves formation of an arc between a continuously-fed bare wire electrode and the work-piece. The process uses a flux to generate protective gases and slag, and to add alloying elements to the weld pool and a shielding gas is not required. Prior to welding, a thin layer of flux powder is placed on the work-piece surface. The arc moves along the joint line and as it does so, excess flux is recycled via a hopper. Remaining fused slag layers can be easily removed after welding. As the arc is completely covered by the flux layer, heat loss is extremely low. This produces a thermal efficiency as high as 60% (compared with 25% for manual metal arc). SAW process offers many advantages compared to conventional CO2 welding process. The main advantages of SAW are higher welding speed, facility of workers, less deformation and better than bead shape & strength of welded joint because there is no visible arc light, welding is spatter-free, fully-mechanized or automatic process, high travel speed, and depth of penetration and chemical composition of the deposited weld metal. However it is difficult to application of thin plate according to high heat input. So this paper has been focused on application of the field according to SAW process for thin plate in ship-structures. For this purpose, It has been decided to optimized welding condition by experiments, relationship between welding parameters and bead shapes, mechanical test such as tensile and bending. Also finite element(FE) based numerical comparison of thermal history and welding residual stress in A-grade 3.2 thickness steel of SAW been made in this study. From the result of this study, It makes substantial saving of time and manufacturing cost and raises the quality of product.

• Applied Microscopy
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• 제10권1_2호
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• pp.7-17
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• 1980

Electron microscope radioautography introduced by Liquier-Milward (1956) is now used routinely in many laboratories. Most of the technical difficulties in specimen preparation have been overcome. This method is modified from loop method for improvement of EM radioautographic techniques. The advantages of this method are: 1. the use of single specimens on small corks and of a large wire loop, allows the experimenter to avoid the blemishes in the membrane; 2. the surfactant dioctyl sodium sulphosuccinate is added to diluted ILford L4, thus greatly prolonging the period of time over which good emulsion layers can be made; 3. corks can be handled in perspex holder which allows about 20 specimens to be developed simultaneously. The steps of the method comprise: 1. Cut ribbons of ultrathin sections of silver interference colour 2. Pick them up on formvar-coated 200 mesh grids 3. Prestaining of tissues 4. Coat the specimens with a thin layer of carbon by evaporation (30-60A) 5. Mount the specimens on corks (about 1cm apical diameter) using double-sided scotch tape 6. Emulsion coating; a. Take a 250m1 beaker, place it on the pan of a sliding weight balance and weigh it. Add 10 grams extra to the beam. Add pieces of ILford L4 emulsion to the beaker until the balance is swinging freely. Add the 20ml of distilled water that was previously measured out. b. Surfactant dioctyl sodium sulphosuccinate is added to diluted ILford L4. 7. Prepare a series of membranes of gelled emulsion with the wire loop and apply one to each cork-borne specimen. 8. Put the specimens away to expose by pushing the corks into short length of PVC tubing, each tube having a small hole in the side 9. Place the tubes in small boxes together with silica gel. 10. Exposure 11. Developer - Kodak Microdol X for 3 minutes 12. Fixer - A perspex holder can be manufactured which allows 20 specimens to be developed simultaneously. 12. Fixer - 30% sodium thiosulfate for 10 minutes 13. Examination with Siemens Elmiskop 1A electron microscope

• 한국전자파학회지:전자파기술
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• 제6권3호
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• pp.3-14
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• 1995

800MHz대 휴대용 전화기에서, 모노폴 안테나의 입력임피던스, 입력전력 및 복사패턴을 시간영역 유한차분 볍(FDTD)을 이용하여 계산하였다 .. FDTD로 모노폴 안테나의 주파수특성 해석을 위해, 휴대용 전화기를 모노 폴 안테나가 도체 박스에 접속된 형태로 모델링하고, 도션구조의 FDTD 해석을 위해, Yee 알고리즘을 가는 도 선 근사법 및 백스웰 적분방정식을 이용하여 변형한 알고리즘[U]을 적용하였다. 또한, 도체 박스에 의한 모노폴 안테나의 복사특성 영향을 관찰하기위해, 모노폴 안테나 및 도체 박스주위에 분포하는 주변자계로 부터, 전 류분포를 직접 구하여 복사패턴을 계산하는 방볍을 제시하고, 기존의 FDTD 복사패턴 계산방법에 의한 결과와 비교하였다. 모든 FDTD 계산결과는 휴대용 전화기의 전체 길이를 $\lambda$/2가 되도록 제작, 측정결과와 비교, 잘 열 치하고 있음을 확인하였다.

• 한국산학기술학회논문지
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• 제7권5호
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• pp.801-804
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• 2006

[ $YBa_2Cu_3O_{7-{\delta}}(YBCO)$ ]계 초전도 선재용 $GdAlO_3(GAO)$ 버퍼층을 졸-겔(sol-gel) 공정에 의해 제조하였다. 전구체 용액은 Gd 질산염과 Al 질산염을 1:1 화학양론비로 하여 메탄올에 용해하여 준비하였다. 전구체 용액을 $SrTiO_3(STO)$ (100) 단결정 기판위에 스핀 코팅하고, 수분이 포함된 $N_2-5%\; H_2$ 분위기에서 $1000^{\circ}C$에서 2시간 열처리 하였다. 열처리 후 GAO 층의 표면에 대한 주사전자현미경 관찰에 의해 GAO 층이 에피택셜의 특징인 각면 형상을 갖는 것을 알 수 있었다. X-선 회절분석에 의하면 GAO 버퍼층은 c-축으로 우선 배향된 에피택셜 박막으로써 반가폭이 각각 (002)면에서 $0.29^{\circ}(out-of-plane)$, {112}지면에서 $1.10^{\circ}(in-plane)$의 우수한 배향성을 나타내었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.235-235
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• 2003

The development of a buffer layer is an important issue for the second -generation wire, YBCO coated metal wire. The buffer layer demands not only on the prohibition of the reaction between YBCO and metal substrate, but also the proper lattice match and conductivity for high critical current density (Jc) of YBCO superconductor, In order to satisfy these demands, we suggested CaRuO3 as a useful candidate having that the lattice mismatches with Ni (200) and with YBCO are 8.2% and 8.0%, respectively. The CaRuO3 thin films were deposited on Ni substrates using various methods, such as e-beam evaporation and DC and RF magnetron sputtering. These films were investigated using SEM, XRD, pole-figure and AES. In e-beam evaporation, the deposition temperature of CaRuO3 was the most important since both hi-axial texturing and NiO formation between Ni and CaRuO3 depended on it. Also, the oxygen flow rate had i[n effect on the growth of CaRuO3 on Ni substrates. The optimal conditions of crystal growth and film uniformity were 400$^{\circ}C$, 50 ㎃ and 7 ㎸ when oxygen flow rate was 70∼100sccm In RF magnetron sputtering, CaRuO3 was deposited on Ni substrates with various conditions and annealing temperatures. As a result, the conductivity of CaRuO3 thin films was dependent on CaRuO3 layer thickness and fabrication temperature. We suggested the multi-step deposition, such as two-step deposition with different temperature, to prohibit the NiO formation and to control the hi-axial texture.

• 마이크로전자및패키징학회지
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• 제20권3호
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• pp.31-35
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• 2013

TSOP(Thin Small Outline Package)는 가전제품, 자동차, 모바일, 데스크톱 PC등을 위한 저렴한 비용의 패키지로, 리드 프레임을 사용하는 IC패키지이다. TSOP는 BGA와 flip-chip CSP에 비해 우수한 성능은 아니지만, 저렴한 가격 때문에 많은 분야에 널리 사용되고 있습니다. 그러나, TSOP 패키지에서 몰딩공정 할 때 리드프레임의 열적 처짐 현상이 빈번하게 일어나고, 반도체 다이와 패드 사이의 Au 와이어 떨어짐 현상이 이슈가 되고 있다. 이러한 문제점을 해결하기 위해서는 리드프레임의 구조를 개선하고 낮은 CTE를 갖는 재료로 대체해야 한다. 본 연구에서는 열적 안정성을 갖도록 리드프레임 구조 개선을 위해 수치해석적 방법으로 진행하였다. TSOP 패키지에서 리드프레임의 열적 처짐은 반도체와 다이 사이의 거리(198 um~366 um)에서 안티-디플렉션의 위치에 따라 시뮬레이션을 진행하였다. 안티-디플렉션으로 TSOP 패키지의 열적 처짐은 확실히 개선되는 것을 확인 했다. 안티-디플렉션의 위치가 inside(198 um)일 때 30.738 um 처짐을 보였다. 이러한 결과는 리드프레임의 열적 팽창을 제한하는데 안티-디플렉션이 기여하고 있기 때문이다. 그러므로 리드프레임 패키지에 안티-디플렉션을 적용하게 되면 낮은 CTE를 갖는 재료로 대체하지 않아도 열적 처짐을 향상시킬 수 있음을 기대할 수 있다.