• Journal of the Korean Magnetics Society
• /
• v.11 no.2
• /
• pp.63-71
• /
• 2001

The effects of an Ag seed layer on the magnetic properties and the microstructural evolution of SmCo/Cr thin films deposited on glass substrates were investigated. Coercivity of the films is 2.0 kOe when the thickness of Ag seed layer was 1nm thick, but it increased to 2.7 kOe when the Ag seed layer thickness is 3 nm. The increase of coercivity for film with 3 nm-thick Ag is due to roughness of Cr and grain size of Cr by the Ag microbumps. Ar partial pressure influenced on the formation of Ag microbumps, for example, they were formed at 5 mTorr when Ag thickness was 1 nm. The mechanism of magnetization reversal of the SmCo films changed from domain wall motion to domain rotation as the Ag inserted. This was thought to be due to inhibition of domain wall motion by the reduction of Cr grain size and the increase of roughness.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.19 no.7
• /
• pp.81-88
• /
• 2020

The geometry and the defect of the groove of the part provoke a sudden change of stress in a local region. The objective of this paper is to investigate the effects of the geometry and the imperfection of a small groove on stress distributions in the vicinity of the joined region for the ABS part with a thin wall using a three-dimensional finite element analysis (FEA). Several types of groove are designed to improve joining characteristics in the vicinity joined region. The imperfection model of the small-sized groove is obtained from observation of deposition characteristics of a fused deposition modeling process. Local stress distributions in the vicinity of the joined region are predicted by the FE model with refined meshes. The influence of the angle and the imperfection of the groove on appearance regions of the maximum stress and distributions of the defined principal stress for different loading conditions is examined using the results of FEAs. Finally, a proper design of the groove is proposed to improve joining characteristics between the substrate and the ABS part.

• Applied Chemistry for Engineering
• /
• v.10 no.2
• /
• pp.225-230
• /
• 1999

Low pressure metal organic chemical vapor deposition (LPMOCVD) of $Li_2O$ solid thin films from Li(DPM) in nitrogen-oxygen or argon-oxygen atmosphere was experimentally investigated by using a small hot wall tubular type reactor. XRD and ESCA analysis revealed that $Li_2CO_3$ film grew in nitrogen-oxygen atmosphere and $Li_2O$ grew in argon-oxygen atmosphere. The grown lithium oxide or carbonate reacted with silicon or silica base materials to produce silicates. The CVD model analysis by means of the well-known micro trench method and Monte Carlo simulation was not fully successful, but a set of data on gas phase reaction rate constant and surface reaction constant was obtained.

• Imaging Science in Dentistry
• /
• v.47 no.3
• /
• pp.181-187
• /
• 2017

Purpose: The purpose of this study was to measure the buccal bone thickness and angulation of the maxillary incisors and to analyze the correlation between these parameters and the root position in the alveolar bone using cone-beam computed tomography (CBCT). Materials and Methods: CBCT images of 398 maxillary central and lateral incisors from 199 patients were retrospectively reviewed. The root position in the alveolar bone was classified as buccal, middle, or palatal, and the buccal type was further classified into subtypes I, II, and III. In addition, the buccolingual inclination of the tooth and buccal bone thickness were evaluated. Results: A majority of the maxillary incisors were positioned more buccally within the alveolar bone, and only 2 lateral incisors(0.5%) were positioned more palatally. The angulation of buccal subtype III was the greatest and that of the middle type was the lowest. Most of the maxillary incisors exhibited a thin facial bone wall, and the lateral incisors had a significantly thinner buccal bone than the central incisors. The buccal bone of buccal subtypes II and III was significantly thinner than that of buccal subtype I. Conclusion: A majority of the maxillary incisor roots were positioned close to the buccal cortical plate and had a thin buccal bone wall. Significant relationships were observed between the root position in the alveolar bone, the angulation of the tooth in the alveolar bone, and buccal bone thickness. CBCT analyses of the buccal bone and sagittal root position are recommended for the selection of the appropriate treatment approach.

• Korean Journal of Crystallography
• /
• v.9 no.1
• /
• pp.53-63
• /
• 1998

The Cd1-xZnxS thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). the source and substrate temperature are 600℃ and 440℃, respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction (DCXD). Hall effect on the sample was measured by the van der Pauw method and the carrier density and mobility dependence of Hall characteristics on temperature was also studied. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (γ), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that the best photoconductive characteristic were observed in the Cd0.53Zn0.47S samples annealed in Cu vapor comparing with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.65 × 107, the MAPD of 338mW, and the rise and decay time of 9.7 ms and 9.3 ms, respectively.

• Journal of the Korean Ceramic Society
• /
• v.49 no.6
• /
• pp.620-624
• /
• 2012

The role of moisture remaining inside the deposition chamber during the formation of the cubic boron nitride (c-BN) phase in BN film was investigated. BN films were deposited by an unbalanced magnetron sputtering (UBM) method. Single-crystal (001) Si wafers were used as substrates. A hexagonal boron nitride (h-BN) target was used as a sputter target which was connected to a 13.56 MHz radiofrequency electric power source at 400 W. The substrate was biased at -60 V using a 200 kHz high-frequency power supply. The deposition pressure was 0.27 Pa with a flow of Ar 18 sccm - $N_2$ 2 sccm mixed gas. The inside of the deposition chamber was maintained at a moisture level of 65% during the initial stage. The effects of the evacuation time, duration time of heating the substrate holder at $250^{\circ}C$ as well as the plasma treatment on the inside chamber wall on the formation of c-BN were studied. The effects of heating as well as the plasma treatment very effectively eliminated the moisture adsorbed on the chamber wall. A pre-deposition condition for the stable and repeatable deposition of c-BN is suggested.

• Wind and Structures
• /
• v.17 no.3
• /
• pp.317-343
• /
• 2013

When evaluating flutter instability, it is often assumed that incident wind is normal to the longitudinal axis of a bridge and the flutter critical wind speed estimated from this direction is most unfavorable. However, the results obtained in this study via oblique sectional model tests of four typical types of bridge decks show that the lowest flutter critical wind speeds often occur in the yaw wind cases. The four types of bridge decks tested include a flat single-box deck, a flat ${\Pi}$-shaped thin-wall deck, a flat twin side-girder deck, and a truss-stiffened deck with and without a narrow central gap. The yaw wind effect could reduce the critical wind speed by about 6%, 2%, 8%, 7%, respectively, for the above four types of decks within a wind inclination angle range between $-3^{\circ}$ and $3^{\circ}$, and the yaw wind angles corresponding to the minimal critical wind speeds are between $4^{\circ}$ and $15^{\circ}$. It was also found that the flutter critical wind speed varies in an undulate manner with the increase of yaw angle, and the variation pattern is largely dependent on both deck shape and wind inclination angle. Therefore, the cosine rule based on the mean wind decomposition is generally inapplicable to the estimation of flutter critical wind speed of long-span bridges under skew winds. The unfavorable effect of yaw wind on the flutter instability of long-span bridges should be taken into consideration seriously in the future practice, especially for supper-long span bridges in strong wind regions.

• Restorative Dentistry and Endodontics
• /
• v.32 no.1
• /
• pp.9-18
• /
• 2007

The purposes of this study were to examine the variability of adhesive thickness on the different site of the cavity wall when used total-etch system without filler and simplified self-etch system with filler and to evaluate the relationship between variable adhesive thickness and microtensile bond strength to the cavity wall. A class I cavity in six human molars was prepared to expose all dentinal walls. Three teeth were bonded with a filled adhesive, $Clearfil^{TM}$ SE bond ana the other three teeth were bonded with unfilled adhesives, $Scotchbond^{TM}$ Multi Purpose. Morphology and thickness of adhesive layer were examined using fluorescence microscope. Bonding agent thickness was measured at three points along the axial cavity wall edge of cavity margin (rim). halfway down each cavity wall (h1f), internal angle of the cavity (ang). After reproducing the adhesive thickness at rim, h1f and ang, micro-tensile bond strength were evaluated. For both bonding agents, adhesive thickness of ang was significantly thicker than that of rim and h1f (P <0.05). As reproduced the adhesive thickness, microtensile bond strength was increased as adhesive thickness was increased in two bonding agents. Adhesive thickness of internal angle of the cavity was significantly thicker than that of the cavity margin and the halfway cavity wall for both bonding agents. Microtensile bond strength of the thick adhesive layer at the internal angle of the cavity was higher than that of the thin adhesive layer at 1,he cavity margin and the halfway cavity in the two bonding systems.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.230-230
• /
• 2013

In amorphous or microcrystalline thin-film silicon solar cells, p-i-n structure is used instead of p/n junction structure as in wafer-based Si solar cells. Hence, these p-i-n structured solar cells inevitably consist of many interfaces and the cell efficiency critically depends on the effective control of these interfaces. In this study, in-situ plasma treatment process of the interfaces was developed to improve the efficiency of a-Si:H solar cell. The p-i-n cell was deposited using a single-chamber VHF-PECVD system, which was driven by a pulsed-RF generator at 80 MHz. In order to solve the cross-contamination problem of p-i layer, high RF power was applied without supplying SiH4 gas after p-layer deposition, which effectively cleaned B contamination inside chamber wall from p-layer deposition. In addition to the p-i interface control, various interface control techniques such as thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, multiple applications of thin i-layer deposition and H2 plasma treatment, H2 plasma treatment of i-layer prior to n-layer deposition, etc. were developed. In order to reduce the reflection at the air-glass interface, anti-reflective SiO2 coating was also adopted. The initial solar cell efficiency over 11% could be achieved for test cell area of 0.2 $cm^2$.

• Journal of the Korean Vacuum Society
• /
• v.6 no.1
• /
• pp.20-27
• /
• 1997

We have investigated the formation techniques of copper thin films which would be useful for sub-quarter-micron integrated circuits. A chemical vapor deposition technology has been tried for the better side wall formation of the thin films, and a metal organic compound, named (hface)Cu(VTMS) (hexafluoroacetylacetonate vinyltrimethylsilane copper(I)) was used as the precursors. We have deposited the copper thin films on TiN and $SiO_2$substrates. The film resistivity and deposition selectivity have been measured as functions of substrate temperature and chamber pressure. Best electrical properties were obtained at $180^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure. Under the optimum deposition conditions, polycrystalline copper structures were observed to be grown, and the deposition rate of 120 nm/min was measured. The electrical resistivity as low as 0.25$mu \Omega$.cm, and the surface roughness of 15.5 nm were also measured. These are the suitable electrical and material properties required in the sub-quarter-micron device fabrication. Also, in the substrate temperature range of 140-$250^{\circ}C$, high deposition selectivity was observed between TiN and $SiO_2$.