• 열처리공학회지
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• 제4권1호
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• pp.19-29
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• 1991

This study was to investigate the influence of the substrate hardness on the hardness and adhesion of TiN thin film deposited by R.F. PACVD. Although the substrate hardness changed, chemical composition, stoichiometry and structure of TiN thin film did not change. ISE index was 1.96-1.99 for the substrate and was 1.57-1.79 for TiN thin film. And ISE index of TiN thin film was inverse proportion to the substrate hardness. When the substrate hardness was low, TiN thin film had many cracks around the indentation. But as the substrate hardness increased, TiN thin film had a few cracks and the deformation was limited within indentation. In having measured the adhesion of TiN thin film by SAT, the critical load (Lc) generally increased as the substrate hardness decreased.

• E2M - 전기 전자와 첨단 소재
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• 제9권2호
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• pp.196-203
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• 1996

The highly c-axis oriented zinc oxide thin films were deposited on Sapphire(0001) substrates by reactive RF magnetron sputtering. The characteristics of zinc oxide thin films on RF power, substrate-target distance, and substrate temperature were investigated by XRD, SEM and EDX analyses. The physical characteristics of zinc oxide thin films changed with various deposition conditions. The higher substrate temperatures were, The better crystallinity of zinc oxide thin films. The highly c-axis oriented zinc oxide thin films were obtained at sputter pressure 5mTorr, rf power 200W, substrate temperature 350.deg. C, substrate-target distance 5.5cm. In these conditions, the resistivity of zinc oxide thin films deposited on pt/sapphire was 12.196*10$^{9}$ [.ohm.cm].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.404-405
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• 2007

Tin-doped indium thin film is outstanding material among transparent Conductive Oxide (TCO) materials. ITO thin films show a low electrical resistance(<$10^{-4}\;[{\Omega}{\cdot}m]$) and high transmittance(>80%) in the visible range. ITO thin films usually have been deposited on the glass substrate. In order to apply flexible display, the substrate should have the ability to bend and be deposited without substrate heat. Also properties of ITO thin film depend on what kind of substrate. In this study, we prepared ITO thin film on the polycarbonate (PC) substrate by using Facing Target Sputtering (FTS) system. Before deposition of ITO thin film, PC substrate took plasma surface treatment. The electrical and surface properties of as-deposited thin films were investigated by Hall Effect measurement, UV/VIS spectrometer and the surface property of substrate is investigated by Contact angle measurement.

• 한국세라믹학회지
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• 제29권5호
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• pp.383-390
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• 1992

We investigated the effect of substrate on the properties of the Ni-Zn-Cu ferrite thin films deposited on SiO2 (1000∼3000${\AA}$) / Si (100) substrate at various conditions by rf magnetron sputtering. A disktype Ni-Zn-Cu ferrite sintered by conventional ceramic process and argon gas were used as a target and a sputtering gas, repectively. The compositions of the thin films measured by EPMA were similar to target composition (Fe: 65.8 at%, Ni: 12.7 at%, Cu: 6.7 at%, Zn: 14.8 at%) irrespective of substrate temperature. Amorphous thin films were deposited when substrate was not intentionally heated, but the films came to crystallize with increasing substrate temperature, and crystalline thin films were deposited at substrate temperature above 200$^{\circ}C$. Below 250$^{\circ}C$ saturation magnetization (Ms), remanence (Mr) and coercivity (Hc) of the ferrite thin film increased with the substrate temperature due to the increase of grain size and the improvement of crystallinity. And above 250$^{\circ}C$, Ms, Mr increased slightly, but Hc of the amorphous thin films increased due to crystallization, whereas that of the crystalline thin films decreased because of grain growth and stress release.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.649-652
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• 1999

The (Ba, Sr)TiO$_3$(BST) thin films were fabricated on Pt/Ti/SiO$_2$/Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with substrate temperature by XRD, SEM, EDS and AES depth profils. Increasing the substrate temperature, barium multi titanate phases were decreased. The BST thin film had a structure of perovskite type, and had peaks of (100), (200) at the substrate temperature of 50$0^{\circ}C$. When the BST thin films were deposited at the substrate temperature of 50$0^{\circ}C$, the composition ratio of Ba/sr was 52/48.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권10호
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• pp.505-509
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• 2004

The (Sr/sub 0.9/Ca/sub 0.1/)TiO₃(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO₂/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O₂ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[Å/min]. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of 100～500[℃]. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of -80～+90[℃]. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases.

• 한국전기전자재료학회논문지
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• 제34권1호
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• pp.33-38
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• 2021

Using facing target magnetron sputtering (FTMS) with a graphite target source, carbon nitride thin films were deposited on silicon and glass substrates at different substrate temperatures to confirm the tribological, electrical, and structural properties of thin films. The substrate temperatures were room temperature, 150℃, and 300℃. The tribology and electrical properties of the carbon nitride thin films were measured as the substrate temperature increased, and a study on the relation between these results and structural properties was conducted. The results show that the increase in the substrate temperature during the fabrication of the carbon nitride thin films increased the hardness and elastic modulus values, the critical load value was increased, and the residual stress value was reduced. Moreover, the increase in the substrate temperature during thin-film deposition was attributed to the improvement in the electrical properties of carbon nitride thin film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.281-282
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• 2005

The AZO thin film was prepared on flexible substrate by Facing Targets Sputtering method. The substrate used the Polycarbonate(PC), thickness 200$\mu$m. In particular, the AZO thin film was prepared at room temperature because the substrate is weak in heat. The structural, electrical, optical properties of the AZO thin film were investigated and the surface was observed by microscope.

• Structural Engineering and Mechanics
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• 제74권2호
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• pp.215-225
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• 2020

Thin films easily wrinkle under compressive loading due to their small bending stiffness resulting from their tiny thickness. For a thin film deposited on a functionally graded substrate with non-uniform stiffness exponentially changes along the length span in this paper, the uniaxial wrinkling problem is solved analytically in terms of hyper-Bessel functions. For infinite, semi-infinite and finite length systems the wrinkling load and wrinkling wavenumber are determined and compared with those in literature. In comparison with a homogeneous substrate-bounded film in which the wrinkling pattern is uniform along the length span, for a functionally graded substrate-film system the wrinkles accumulate around the softer location of the functionally graded substrate. Therefore, the effective length of the film influenced by the wrinkles decreases, the amplitude of the wrinkles on softer regions of the functionally graded substrate grows and the wrinkling load of the functionally graded substrates with higher softening rate decreases more. The results of the current research are expected to be useful in science and technology of thin films and wrinkling of the structures especially living tissues.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.121-124
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• 1999

The (Ba,Sr)TiO$_3$[BST] thin film were fabricated on the Pt/Ti/SiO$_2$/Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with deposition time and substrate temperature by XRD. In the case of the BST thin films which has the deposition thin of 20 min, second phases and BST (111) peaks were increased with increasing the temperature of substrate. The capacitance of the BST thin film (deposition time of 20 min.) was decreased with the substrate temperature and was 1500pF with applied voltage of 1V.