• Proceedings of the Korean Vacuum Society Conference
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• 1998.06a
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• pp.93-93
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• 1998

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.277-277
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.349-349
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• 2008

• Journal of the Korean institute of surface engineering
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• v.33 no.1
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• pp.34-37
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• 2000

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin film's c-axis orientation and grain size were analyzed by XRD (x-ray diffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.155-155
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.245-245
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• 2007

• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.100-105
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• 2001

An all solid-state thin film battery (TFB) was fabricated by growing, undoped and Pt-doped vanadium oxide cathode film ( $V_2$ $O_{5}$ ) on I $n_2$ $O_3$: Sn coated glass, respectively. Room temperature charge-discharge measurements based on Li/Lipon/ $V_2$ $O_{5}$ full-cell structure with a constant current clearly shows that the Pt-doped $V_2$ $O_{5}$ cathode film is superior, in terms of cyclibility. X-ray diffraction (XRD) results indicate that the Pt doping process induces a more random amorphous structure than an undoped $V_2$ $O_{5}$ film. In addition to its modified structure, the Pt-doped $V_2$ $O_{5}$ film has a smoother surface than the undoped sample. Compared to an undoped $V_2$ $O_{5}$ film, the Pt doped $V_2$ $O_{5}$ cathode film has a higher electron conductivity. We hypothesize that the addition of Pt alters electrochemical performance in a manner of making more random amorphous structure and gives an excess electron by replacing the $V^{+5}$. Possible mechanisms are discussed for the observed Pt doping effect on structural and electrochemical properties of vanadium oxide cathode films, which are grown on I $n_2$ $O_3$: Sn coated glass.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.06a
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• pp.53-53
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• 1998

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.461-464
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• 1999

Planar type thin film inductors have a potential for the application of miniaturized DC-DC converters. For those high current applications, the magnetic film with high current capability is required. The current capability of magnetic films is mainly determined from high saturation magnetization (4$\piM_s$) as well as large anisotropy field $(H_k)$. We fabricated a double rectangular spiral thin film inductor which consist of magnetic layer, coil and insulator. Highest inductance values as well as best frequency characteristics can be obtained from 5 MHz and quality factor exhibit about 7.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.527-531
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• 2007

The classical continuum theory-based thin film model is independent of their size and the surface effect can be ignored. But the surface to bulk ratio becomes very large in nano-size structures such as nano film, nano wire and nano beam. In this case, surface effect plays an important role and its contribution of the surface effect must be considered. Molecular dynamics simulation has been a conventional way to analyze these ultra-thin structures but structures in the range between submicro and micro are difficult to analyze by classical molecular dynamics due to the restriction of computing resources and time. Therefore, in present study, the continuum-based method is considered to predict the overall physical and mechanical properties of the structures in nano-scale, especially, for the thin-film. The proposed continuum based-thin plate finite element is efficient and reliable for the prediction of nano-scale film behavior.