• Title/Summary/Keyword: Thin Absorber

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Low Temperature Nanopowder Processing for Flexible CIGS Solar Cells (플렉시블 CIGS 태양전지 제조를 위한 저온 나노입자공정)

  • Park, Chinho;Farva, Umme;Krishnan, Rangarajan;Park, Jun Young;Anderson, Timothy J.
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.61.1-61.1
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    • 2010
  • $CuIn_{1-x}-GaxSe_2$ based materials with direct bandgap and high absorption coefficient are promising materials for high efficiency hetero-junction solar cells. CIGS champion cell efficiency(19.9%, AM1.5G) is very close to polycrystalline silicon(20.3%, AM1.5G). A reduction in the price of CIGS module is required for competing with well matured silicon technology. Price reduction can be achieved by decreasing the manufacturing cost and by increasing module efficiency. Manufacturing cost is mostly dominated by capital cost. Device properties of CIGS are strongly dependent on doping, defect chemistry and structure which in turn are dependent on growth conditions. The complex chemistry of CIGS is not fully understood to optimize and scale processes. Control of the absorber grain size, structural quality, texture, composition profile in the growth direction is important to achieving reliable device performance. In the present work, CIS nanoparticles were prepared by a simple wet chemical synthesis method and their structural and optical properties were investigated. XRD patterns of as-grown nanopowders indicate CIS(Cubic), $CuSe_2$(orthorhombic) and excess selenium. Further, as-grown and annealed nanopowders were characterized by HRTEM and ICP-OES. Grain growth of the nanopowders was followed as a function of temperature using HT-XRD with overpressure of selenium. It was found that significant grain growth occurred between $300-400^{\circ}C$ accompanied by formation of ${\beta}-Cu_{2-x}Se$ at high temperature($500^{\circ}C$) consistent with Cu-Se phase diagram. The result suggests that grain growth follows VLS mechanism which would be very useful for low temperature, high quality and economic processing of CIGS based solar cells.

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Development of Surface Cleaning Techniques for Analysis of Electronics Structure in CuInSe2, CuGaSe2 Solar Cell Absorber Layer (태양전지용CuInSe2와 CuGaSe2 흡수층의 전자구조해석을 위한 표면 청정기술 개발)

  • Kim, Kyung-Hwan;Choi, Hyung-Wook;Kong, Sok-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.2
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    • pp.125-129
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    • 2005
  • Two kinds of physical treatments were examined for the analysis both of intrinsic surface and interior nature of CuInS $e_2$[CIS] and CuGaS $e_2$[CGS] films grown in separated systems. For the first method, a selenium protection layer which was immediately deposited after the growth of the CIS was investigated. The Se cap layer protects CISe surface from oxidation and contamination during the transport under ambient atmosphere. The Se cap was removed by thermal annealing at temperature above 15$0^{\circ}C$. After the decapping treatment at 2$25^{\circ}C$ for 60 min, ultraviolet photoemission and inverse photoemission measurements of the CIS film showed that its valence band maximum(VBM) and conduction band minimum (CBM) are located at 0.58 eV below and 0.52 eV above the Fermi level $E_{F}$, respectively. For the second treatment, an Ar ion beam etching was exploited. The etching with ion kinetic energy $E_{k}$ above 500 eV resulted in broadening of photoemission spectra of core signals and occasional development of metallic feature around $E_{F}$. These degradations were successfully suppressed by decreasing $E_{k}$ below 400 eV. CGS films etched with the beam of $E_{k}$ = 400 eV showed a band gap of 1.7 eV where $E_{F}$ was almost centered.st centered.

Fabrication of Cu2ZnSnS4 Films by Rapid Thermal Annealing of Cu/ZnSn/Cu Precursor Layer and Their Application to Solar Cells

  • Chalapathy, R.B.V.;Jung, Gwang Sun;Ko, Young Min;Ahn, Byung Tae;Kwon, HyukSang
    • Current Photovoltaic Research
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    • v.1 no.2
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    • pp.82-89
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    • 2013
  • $Cu_2ZnSnS_4$ thin film have been fabricated by rapid thermal annealing of dc-sputtered metal precursor with Cu/ZnSn/Cu stack in sulfur ambient. A CZTS film with a good uniformity was formed at $560^{\circ}C$ in 6 min. $Cu_2SnS_3$ and $Cu_3SnS_4$ secondary phases were present at $540^{\circ}C$ and a trace amount of $Cu_2SnS_3$ secondary phase was present at $560^{\circ}C$. Single-phase large-grained CZTS film with rough surface was formed at $560^{\circ}C$. Solar cell with best efficiency of 4.7% ($V_{oc}=632mV$, $j_{sc}=15.8mA/cm^2$, FF = 47.13%) for an area of $0.44cm^2$ was obtained for the CZTS absorber grown at $560^{\circ}C$ for 6 min. The existence of second phase at lower-temperature annealing and rough surface at higher-temperature annealing caused the degradation of cell performance. Also poor back contact by void formation deteriorated cell performance. The fill factor was below 0.5; it should be increased by minimizing voids at the CZTS/Mo interface. Our results suggest that CZTS absorbers can be grown by rapid thermal annealing of metallic precursors in sulfur ambient for short process times ranging in minutes.

Design and Implementation of a Smart Biological Cabinet using RFID (RFID 기반 스마트 생물학 실험실 캐비닛의 설계 및 구현)

  • Han, Youngwhan;Kim, Byungho;Eun, Seongbae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.22 no.4
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    • pp.611-616
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    • 2018
  • RFID-based Smart cabinets can make a recognition error owing to the electromagnetic wave interference. This paper proposes and implements a smart cabinet system for inventory management using RFID, especially which can be applied to biological laboratories. We calculate the optimal value of partition distance for the higher recognition rate between RFID tags and the reader, and the optimal partition thickness for electromagnetic wave absorption to achieve the higher recognition rate, in which two kinds of the partitions have been tested, a pure steel partition with various thickness and a thin steel partition attached with electromagnetic waves absorber. The experimental results show that the most recommended partition structure for the smart cabinets is one with the partition distance of 30cm and the partition thickness of 1mm attached with the electromagnetic wave absorption tapes.

Development of a Solar Collector Performance of Cylindrical Parabolic Concentrating Solar Collector (태양열(太陽熱) 집열기개발(集熱器開發)에 관(關)한 연구(硏究) - 포물반사곡면(抛物反射曲面)으로된 2차원(二次元) 집광식(集光式) 태양열(太陽熱) 집열기(集熱器)의 성능분석(性能分析) -)

  • Song, Hyun Kap;Yon, Kwang Seok;Cho, Sung Chan
    • Journal of Biosystems Engineering
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    • v.10 no.1
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    • pp.54-68
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    • 1985
  • It is desirable to collect the solar thermal energy at relatively high temperature in order to minimize the size of thermal storage system and to enlarge the scope of solar thermal energy utilization. So far the concentrating solar collector has been developed to collect solar thermal energy at relatively high temperature, but it has some difficulties in maintaining the volumetric body of solar collector for long term utilization. On the other hand, the flat-plate solar collector has been developed to collect the solar thermal energy at low temperature, and it has advantages in maintaining the system for long term utilization, since it's thickness is thin and not volumetric. In this study, to develop a solar collector that has both advantages of collecting solar thermal energy at high temperature and fixing conveniently the collector system for long term period, a cylindrical parabolic concentrating solar collector was designed, which has two rows of parabolic reflectors and thin thickness such as the flat-plate solar collector, maintaining the optical form of concentrating solar collector. The characteristics of the concentrating parabolic solar collector newly designed was analysed and the results are summarized as follows; 1. The temperature of the air enclosed in solar collector was all the same as $50^{\circ}C$ in both cases of the open and closed loop, and when the heat transfer fluid was not circulated in tubular absorber, the maximum surface temperature of the absorber was $118-120^{\circ}C$, this results suggested that the heat transfer fluid could be heated up to $118^{\circ}C$. 2. In case of longitudinal installation of the solar collector, the temperature difference of heat transfer fluid between inlet and outlet was $4^{\circ}-6^{\circ}C$ at the flow rate of $110-130{\ell}/hr$, and the collected solar energy per unit area of collector was $300-465W/m^2$. 3. The collected solar energy per unit area for 7 hours was 1960 Kcal/$m^2$ for the open loop and 220 Kcal/$m^2$ for the closed loop. Therefore it is necessary to combine the open and closed loop of solar collectors to improve the thermal efficiency of solar collector. 4. The thermal efficiency of the solar collector (C.P.C.S.C.) was proportional to the density of solar radiation, indicating the maximum thermal efficiency ${\eta}_{max}=58%$ with longitudinal installation and ${\eta}_{max}=45%$ with lateral installation. 5. The thermal efficiency of the solar collector (C.P.C.S.C.) was increased in accordance with the increase of flow rate of heat transfer fluid, presenting the flow rate of $110{\ell}/hr$ was the value of turning point of the increasing rate of the collector efficiency, therefore the flow rate of $110{\ell}/hr$ was considered as optimum value for the test of the solar collector (C.P.C.S.C.) performance when the heat transfer fluid is a liquid. 6. In both cases of longitudinal and lateral installation of the solar collector (C.P.C.S.C.), the thermal efficiency was decreased linearly with an increase in the value of the term ($T_m-T_a$)/Ic and the increasing rate of the thermal efficiency was not effected by the installation method of solar collector.

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Uncooled Metallic Thin-film Thermopile Infrared Detector (비냉각 금속 박막형 열전퇴 적외선 검지기)

  • Oh, Kwang-Sik;Cho, Hyun-Duk;Kim, Jin-Sup;Lee, Yong-Hyun;Lee, Jong-Hyun;Lee, Jung-Hee;Park, Se-Il
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.2
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    • pp.5-12
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    • 2000
  • Uncooled metallic thin-film thermopile infrared detectors have been fabricated, and the figures of merit for the detectors were examined. The hot junctions of a thermopile were prepared on a $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-membrane which acts as a thermal isolation layer, the cold junctions on the membrane supported with the silicon rim which functions as a heat sink, and Au-black was used as an infrared absorber. Infrared absorbance of Au-black, which strongly depends on the chamber pressure during Au-evaporation and its mass per area, was found to be about 90 % in the wavelength range from 3${\mu}{\textrm}{m}$ to 14${\mu}{\textrm}{m}$. Voltage responsivity, noise equivalent power, and specific detectivity of Bi-Sb thermopile infrared detector at 5 Hz-chopping frequency were about 10.5V/W, 2.3 nW/Hz$^{1/2}$, 및 $1.9\times10^{7}$ cm.Hz$^{1/2}$/w at room temperature in air, respectively.

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Design and Fabrication of the Cryogenically Cooled LNA Module for Radio Telescope Receiver Front-End (전파 망원경 수신기 전단부용 극저온 22 GHz 대역 저잡음 증폭기 모듈 설계 및 제작)

  • Oh Hyun-Seok;Lee Kyung-Im;Yang Seong-Sik;Yeom Kyung-Whan;Je Do-Heung;Han Seog-Tae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.3 s.106
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    • pp.239-248
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    • 2006
  • In this paper, the cryogenically cooled low noise amplifier module for radio telescope receiver front-end using pHE-MT MMIC is designed and fabricated. In the selection of MMIC, the MMIC fabricated with the pHEMTS providing successful cryogenic operation are chosen. They are mounted in the housing using the thin film substrate. In the design of the housing, the absorber and the elimination of the gap between the carrier and the housing as well removed the unnecessary oscillations by its structure. The mismatch is improved by ribbon-tuning to provide the best performance at room temperature. The fabricated module shows the gain of $35dB{\pm}1dB$ and the noise figure of $2.37{\sim}2.57dB$ at room temperature over $21.5{\sim}23.5GHz$. In the cryogenic temperature of $15^{\circ}K$ cooled by He gas, the measured gain was above 35 dB and flatness ${\pm}2dB$ and the noise temperatures of $28{\sim}37^{\circ}K$.

New fabrication of CIGS crystals growth by a HVT method (새로운 HVT 성장방법을 이용한 CIGS 결정성장)

  • Lee, Gang-Seok;Jeon, Hun-Soo;Lee, Ah-Reum;Jung, Se-Gyo;Bae, Seon-Min;Jo, Dong-Wan;Ok, Jin-Eun;Kim, Kyung-Hwa;Yang, Min;Yi, Sam-Nyeong;Ahn, Hyung-Soo;Bae, Jong-Seong;Ha, Hong-Ju
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.3
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    • pp.107-112
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    • 2010
  • The Cu$(In_{1-x}Ga_x)Se_2$ is the absorber material for thin film solar cell with high absorption coefficient of $1{\times}10^5cm^{-1}$. In the case of CIGS, the movable energy band gap from $CuInSe_2$ (1.00 eV) to $CuGaSe_2$ (1.68 eV) can be acquired while controlling Ga contain ratio. Generally, the co-evaporator method have used for development and fabrication of the CIGS absorption layer. However, this method should need many steps and lengthy deposition time with high temperature. For these reasons, in this paper, a new growth method of CIGS layer was attempted to hydride vapor transport (HVT) method. The CIGS mixed-source material reacted for HCl gas in the source zone was deposited on the substrate after transporting to growth zone. c-plane $Al_2O_3$ and undoped GaN were used as substrates for growth. The characteristics of grown samples were measured from SEM and EDS.

Anti-Reflection Coating Technology Based High Refractive Index Lens with Ultra-Violet Rays Blocking Function (반사방지 코팅기술 기반 자외선 차단 기능의 고굴절률 안경렌즈)

  • Kim, Ki-Chul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.12
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    • pp.482-487
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    • 2016
  • Ultra-violet rays are very harmful to eye health care. The blocking of ultra-violet rays and a reduction of optical reflection in the visible light range, which is to increase the share of transmitted light, and avoid the formation of ghost images in imaging, are important for the applications of polymer eyeglasses lenses. In this study, the high-refractive index polymer lenses, n=1.67, were fabricated by injection-molded method with the xylene diisocyanate monomer, 2,3-bis-1-propanethiol monomer, and benzotriazol UV absorber (SEESORB 709) mixture. To reduce the reflection of the polymer lens surfaces, multi-layer anti-reflection (AR) coatings were coated for both sides of the polymer lens using an E-beam evaporation system. The optical properties of the UV blocking polymer lens were characterized using a UV-visible spectrometer. The material properties of the thin films, which were composed AR coating layers, refractive index, and surface roughness, were analyzed by ellipsometry and atomic force microscopy. As a result, the fabricated polymer lens perfectly blocked ultra-violet rays below 395 nm with a blocking rate greater than 99%.

Evaluation of Contrast-detail Characteristics of an A-Se Based Digital X-ray Imaging System (A-Se 기반 디지털 X-선 영상장치의 Contrast-detail 특성 평가)

  • Hyun, Hye-Kyung;Park, So-Hyun;Kim, Keun-Young;Cho, Hee-Moon;Cho, Hyo-Sung
    • Journal of the Korean Society of Radiology
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    • v.1 no.1
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    • pp.11-16
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    • 2007
  • In this study, we have performed contrast-detail analysis for an amorphous selenium(a-Se) based digital X-ray imaging system by using a contrast-detail phantom(CDRAD 2.0) to test its low contrast performance. The X-ray imaging system utilizes an 500-mm-thick a-Se semiconductor X-ray absorber coated over an amorphous silicon(a-Si) TFT(thin-film transistor) detector matrix with a $139mm{\times}139mm$ pixel size and a $46.7cm{\times}46.7cm$ active area. In the measurement of contrast-detail curves we first acquired X-ray images of the CDRAD 2.0 phantom at given test conditions(i.e., 40, 50, 60, 70, 80 kVp, and 16 mA.s), and then evaluated the contrast-detail characteristics of the imaging system from each phantom image by using an image quality factor called the image-quality-figure-inverse(IQFinv). The IQFinv values for the imaging system gradually improved with the photon fluence, indicating the improvement of image visibility: 24.4, 35.3, 39.2, 41.5, and 43.4 at photon fluences of $1.8{\times}105$, $5.9{\times}105$, $11.3{\times}105$, $19.4{\times}105$, and $29.4{\times}105$ photons/$mm^2$, respectively.

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