• 한국자기학회:학술대회 개요집
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• 한국자기학회 2014년도 자성 및 자성재료 국제학술대회
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• pp.133-134
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• 2014

• Coupled systems mechanics
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• 제9권4호
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• pp.381-396
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• 2020

Analytical investigation of the fracture of inhomogeneous beam with two parallel lengthwise cracks is performed. The thickness of the beam varies continuously along the beam length. The beam is loaded in three-point bending. Two beam configurations with different lengths of the cracks are analyzed. The two cracks are located arbitrary along the thickness of the beam. Solutions to the strain energy release rate are derived assuming that the material has non-linear elastic mechanical behavior. Besides, the beam exhibits continuous material inhomogeneity along its thickness. The balance of the energy is analyzed in order to derive the strain energy release rate. Verifications of the solutions are carried-out by considering the complementary strain energy stored in the beam configurations. The influence of the continuous variation of the thickness along the beam length on the lengthwise fracture behavior is investigated. The dependence of the lengthwise fracture on the lengths of the two parallel cracks is also studied.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.87-91
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• 2013

Carbon-nanotube field-effect transistors (CNFETs) have drawn wide attention as one of the potential substitutes for metal-oxide-semiconductor field-effect transistors (MOSFETs) in the sub-10-nm era. Output characteristics of coaxially gated CNFETs were simulated using FETToy simulator to reveal the dependence of drain current on the nanotube diameter and gate oxide thickness. Nanotube diameter and gate oxide thickness employed in the simulation were 1.5, 3, and 6 nm. Simulation results show that drain current becomes large as the diameter of nanotube increases or insulator thickness decreases, and nanotube diameter affects the drain current more than the insulator thickness. An equation relating drain saturation current with nanotube diameter and insulator thickness is also proposed.

• 한국자기학회지
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• 제23권2호
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• pp.37-42
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• 2013

본 연구에서는 NiFe 박막 시편을 마그네트론 스퍼터링 방법으로 제조하여 박막면 기준으로 수직면(out-of-plane) 자기장 방향과 수평면(in-plane) 자기장 방향에 따른 강자성 공명 자기장을 측정하였다. 수직면 자기장 방향에 따른 강자성 공명 자기장으로부터 유효자화량($M_{eff}$)을 도출하였으며, NiFe 두께에 따른 $M_{eff}$의 감소는 $K_s=-0.23\;erg/cm^2$의 값을 갖는 표면 이방성 상수에 기인하였다. 또한 수평면 자기장 방향에 따른 강자성 공명 자기장으로부터 수평면에서의 일축 이방성 자기장을 도출하였다. 한편, 일축 이방성 에너지의 자화 용이축이 두께가 감소함에 따라 시편 제조 시 인가한 자기장의 반대 방향으로 회전하고 있었으며, 이러한 현상은 시편 표면에 형성된 NiFeO의 반강자성 특성에 의한 현상으로 설명하였다.

• 한국자기학회지
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• 제27권1호
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• pp.30-34
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• 2017

본 연구에서는 교환 결합력을 갖는 강자성/반강자성(AF) 박막에서 단자구 모델을 사용하여 교환 바이어스($H_{ex}$)의 각도 의존성을 계산하였으며, NiFe/MnIr 박막에서 측정한 결과와 비교 분석하였다. AF층 두께가 임계 두께 이상에서($t_{AF}$ > $t_c$) 계산한 $H_{ex}$의 각도 의존성은 전형적인 일방 이방성 특성을 보였으나, $0.5t_c$ < $t_{AF}$ < $t_c$에서는 $90^{\circ}$ 근처의 특정한 각도에서 AF 스핀의 고정에 의한 독특한 $H_{ex}$의 각도 의존성을 보였다. NiFe/MnIr(20 nm) 박막에서 측정한 $H_{ex}$의 각도 의존성은 전형적인 일방 이방성 특성을 보였으나, NiFe/MnIr(4 nm) 박막에서는 일방 이방성 특성과 AF 스핀의 고정에 의한 특성이 혼합된 결과를 보였으며, 이는 다결정 구조를 갖는 MnIr의 입도 분포 특성으로 설명되어짐을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제25권8호
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• pp.616-619
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• 2012

Oxides possess several interesting properties, such as ferroelectricity, magnetism, superconductivity, and multiferroic behavior, which can effectively be used oxide electronics based on epitaxially grown heterostructures. The microscopic properties of oxide interfaces may have a strong impact on the electrical transport properties of these heterostructures. It was recently demonstrated that high electrical conductivity and mobility can be achieved in the system of an ultrathin $LaAlO_3$ film deposited on a $TiO_2$-terminated $SrTiO_3$ substrate, which was a remarkable result because the conducting layer was at the interface between two insulators. In this study, we observe that the current-voltage characteristics exhibit $LaAlO_3$ thickness dependence of electrical conductivity in $TiO_2$-terminated $SrTiO_3$. We find that the $LaAlO_3$ layers with a thickness of up 3 unit cells, result in highly insulating interfaces, whereas those with thickness of 4 unit cells and above result in conducting interfaces.

• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.253-256
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• 2014

$Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films of $1.5{\mu}m$ thickness were grown on $Pt/Ti/Gd_3Ga_5O_{12}$ substrate by RF magnetron sputtering at annealing temperatures ranging from $550^{\circ}C$ to $700^{\circ}C$. We evaluated the residual stress, by using a William-Hall plot, as a function of the annealing temperatures of PZT thin film with a constant thickness. As a result, the residual stresses of PZT thin film of $1.5{\mu}m$ thickness were changed by varying the annealing temperature. Also, we measured the hysteresis characteristic of PZT thin films of $1.5{\mu}m$ thickness to evaluate for application of an optoelectronic device.

• 대한전기학회논문지
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• 제36권7호
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• pp.447-452
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• 1987

In this paper, the dependence of piezoelectric properties in the 0-3 composite system of piezoelectric-ceramics polymer materials on particle size of ceramics were investigated. Radial mode and thickness mode of composite were observed similar to single phase of piezoelectric ceramics. The measured values of dielectric constant and dissipation factor were dependent on particle size, which increased with the increasing particle size. the planar coupling factor, thickness coupling factor and thickness frequency constant with the particle size were almost constant, while planar frequency constant increased. The thickness coupling factor decreased with the increasing thickness of specimen. It is found that maximum voltage coeffidient was calculated on the specimen with particle size smallar than 46 ${\mu}m$.

• 한국세라믹학회지
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• 제28권11호
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• pp.859-864
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• 1991

High quality lead titanate thin films were fabricated by spin coating on a silicon substrate. The resulting dried gel layers were uniform in thickness through 2$\times$2 $\textrm{cm}^2$ area, and polycrystalline perovskite structures developed almost crack free with a heat treatment above 50$0^{\circ}C$ in films with thickness above 360 nm. Metastable pyrochlore structures were observed in films with thickness of 160 nm when heat treated at 500 and $600^{\circ}C$, but these structure did not appear in films with thickness of 360 nm. The thickness dependence in crystal structure of films was studied. by varying the substrate condition and analyzing the interface between the film and substrate. In native oxide films on silicon stbstrates, amorphous dried gel layers were heterogeneously nucleated. Metastable cubic pyrochlore structure could be crystallized in amorphous native oxide.

• 한국표면공학회지
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• 제44권6호
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• pp.255-259
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• 2011

The thickness dependence of magnetic properties was experimentally investigated in nanocrystalline Fe-Hf-N thin films fabricated by a RF magnetron sputtering method. In order to investigate the thickness effect on their magnetic properties, the films are prepared with different thickness ranges from 90 nm to 330 nm. It was revealed that the coercivity of the thin film increased with film thickness. On the contrary, the saturation magnetization decreased with film thickness. On the basis of the SEM and TEM, an amorphous phase forms during initial growth stage and it changes to crystalline structure after heat treatment at $550^{\circ}C$. Nanocrystalline Fe-Hf-N particles are also generated.