• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.396-402
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• 2001

MgO thin films with 1000 $\AA$ thickness were deposited on Cu substrates by using an electron gun evaporator at room temperature. A 1000 $\AA$ thick Al layer was deposited on the MgO for removing the charging effect of the MgO thin film during the measurements of the sputtering yields. A Ga ion liquid metal was used as the focused ion beam(FIB) source. The ion beam was focused by using double einzel lenses, and a deflector was employed to scan the ion beams into the MgO layer. Both currents of the secondary particle and the probe ion beam were measured, and they dramatically changed with varying the applied acceleration voltage of the source. The sputtering yield of the MgO layer was determined using the values of the analyzed probe current, the secondary particle current, and the net current. When the acceleration voltage of the FIB system was 15 kV, the sputtering yield of the MgO thin film was 0.30. The sputtering yield of the MgO thin film linearly increases with the acceleration voltage. These results indicate that the FIB system is promising for the measurements of the sputtering yield of the MgO thin film.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.599-602
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• 2001

In this study, we fabricated chemically polymerized PPy and PANi films with different selectivity by controlling dedoping time. And the sensing properties and mechanism of VOCs adsorption to conducting polymers were investigated. Thin sensor had higher sensitivity compared to thick one, and dedoped sensor for 1-minute highest sensitivity. Upon gas absorption, polypyrrole exhibited positive sensitivity while polyaniline had negative sensitivity. PPy film show hydrophilic property and PANi film show hydrophobic property. After the gas absorption, the sensitivity increased as a function of polarity of absorbed molecules. These behaviors are due to the polar molecules absorbed with the movable polaron or free carrier, and then it interrupt or generate the movement of polaron and carrier, and then it changes the conductivity of polymer. We found that conducting polymer sensors are very sensitive to the difference in polarity of gas molecules.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.662-668
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• 1994

The physical and electrical characteristics of sub-l0nm thick capacitor dielectrics formed by wet oxidation of silicon nitride(oxide/nitride composite) and by removing the top oxide of oxidized silicon nitride(0xynitride) are described. For the capacitors with an oxide/nitride composite layer, the capacitance decreases sharply, but the breakdown field increases with an increase in the wet oxidation time at $900^{\circ}C$. For the capacitors with oxynitride layers, the values of both the capacitance and the breakdown field increase with increasing wet oxidation time. The reduction of effective thickness and the improved quality of oxynitride film are responsible for the improved capacitance and increased breakdown fields, respectively. In addition, intrinsic TDDB characteristics and early breakdown failure rate of oxynitride film are improved with increasing oxidation time. Consequently, the oxynitride film is suitable for dynamic memories as a thin dielectric film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.589-593
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• 2011

[ $SnO_2$ ]nano powders were prepared by solution reduction method using tin chloride($SnCl_2{\cdot}2H_2O$), hydrazine($N_2H_4$) and NaOH. The $SnO_2$ thick films for gas sensors were fabricated by screen printing method on alumina substrates and annealed at $300^{\circ}C$ in air, respectively. XRD patterns of the $SnO_2$ nano powders showed the tetragonal structure with (110) dominant orientation. The particle size of $SnO_2$ nano powders at the ratio of $SnCl_2:N_2H_4$+NaOH= 1:6 was about 60 nm. The sensing characteristics were investigated by measuring the electrical resistance of each sensor in a test box. Sensitivity of $SnO_2$ gas sensor to 5 ppm $CH_4$gas and 5 ppm $CH_3CH_2CH_3$ gas was investigated for various $SnCl_2:N_2H_4$+NaOH proportion. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of $SnO_2$ sensors was observed at the $SnCl_2:N_2H_4$+NaOH= 1:8 and $SnCl_2:N_2H_4$+NaOH= 1:6, respectively. Response and recovery times of $SnO_2$ gas sensors prepared by $SnCl_2:N_2H_4$+NaOH= 1:6 was about 40 s and 30 s, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.45-49
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• 2008

Polyethylene is widely used as the insulator for power cable. To investigate the conduction mechanism for power cable insulation under ac high field, it is very important to acquire the dissipation current under actual running field. Recently, we have developed the unique system, which make possible to observe the nonlinear dissipation current waveform. In this system, to observe the nonlinear properties with high accuracy, capacitive current component is canceled by using inverse capacitive current signal instead of using the bridge circuit for canceling it. We have already reported that the dissipation currents of $40\;{\mu}m$ thick LDPE film at 10 kV/mm and over 140 Hz, it starts to show nonlinearity and odd number's harmonics were getting large. To investigate the conduction mechanis ms in this region, especially space charge effect, various kinds of estimation, such as time variations of instantaneous resistivity for one cycle, FFT spectra of dissipation current waveforms and so on, has been examined. As the results of these estimations, it was found that the dissipation current will depend on not only the instantaneous value of electric field but also the time differential of applied electric field due to taking a balance between applied field and internal field. Furthermore, two large peaks of dissipation current for each half cycle were observed under certain condition. In this paper, to clarify the reason why it shows two peaks for each half cycle, the film thickness dependences of dissipation current waveforms were observed by using the three different thickness LDPE films.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.388-391
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• 1999

Well oriented Bi2212 superconductor thick films were formed successfully on a copper substrate by liquid reaction between a Cu-free precursor and Cu tape method in which Cu-free BSCO powder mixture was' printed on copper plate and heat-treated. And we examined the effect of heat-treatment atmosphere for the superconducting properties and microstructure of Bi2212. The composition of Cu-free BSCO powder mixture was Bi$_2O_3$ : SrCO$_3$ : CaCO$_3$ = 1.2~2 : 1 : 1 and the heat-treatment for the superconducting formation reaction was performed in air, oxygen, nitrogen and low oxygen pressure. At heat-treatment temperature, the printing layer partially melt by reacting with CuO of the oxidizing copper plate, and the nonsuperconducting phases present in the melt are typically Bi-free phases and Cu-free phases. Among the nonsuperconducting phases, it is known that the (Sr,Ca)CuO$_3$ phase restrain the formation of the Bi2212 superconducting phase. Because a kind of the nonsuperconducting phases is controled by the oxygen partial pressure, the optimum condition in which the remnants of the second phases don't leave in the fully processed conductor was determined by XRD and the critical tempera to re (Tc) analysis.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.279-284
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• 2003

The $CoSi_2$ process is widely employed in a salicide as well as an ohmic layer process. In this experiment, we investigated the characteristics of $CoSi_2$ films by combinations of I-type (TiN 100$\AA$/Co 150$\AA$), II-type(TiN 100$\AA$/Co 150$\AA$/Ti 50$\AA$), III-type(Ti 100$\AA$/Co 150$\AA$/Ti 50$\AA$), and IV-type(Ti 100$\AA$/Co 150$\AA$/Ti 100$\AA$). Sheet resistances of $CoSi_2$ show the lowest resistance with 2.9 $\Omega$/sq. in a TiN/Co condition and much higher resistances in conditions simultaneously applying Ti capping layers and Ti interlayers. Though we couldn't observe a $CoSi_2$roughness dependence on the film stacks from RMS values, Ti capping layers turned into 78∼94$\AA$ thick TiN layers of (200) preferred orientation at $N_2$ambient. In addition, Ti interlayers helped to form the epitaxial $CoSi_2$with (200) preferred orientation and ternary compounds of Co-Ti-Si. We propose that film structures of II-type and III-type may be appropriate in the salicide process and the ohmic layer process from the viewpoint of Co diffusion kinetics and the CoSi$_2$epitaxy.

• Korean Journal of Materials Research
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• v.18 no.7
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• pp.379-383
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• 2008

We report on the light-emitting diode (LED) characteristics of core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in $TiO_2$thin films on a Si substrate. A simple p-n junction could be formed when nanocrystal QDs on a p-type Si substrate were embedded in ${\sim}5\;nm$ thick $TiO_2$ thin film, which is inherently an n-type semiconductor. The $TiO_2$ thin film was deposited over QDs at $200^{\circ}C$ using plasma-enhanced metallorganic chemical vapor deposition. The LED structure of $TiO_2$/QDs/Si showed typical p-n diode currentvoltage and electroluminescence characteristics. The colloidal core-shell CdSe/ZnS QDs were synthesized via pyrolysis in the range of $220-280^{\circ}C$. Pyrolysis conditions were optimized through systematic studies as functions of synthesis temperature, reaction time, and surfactant amount.

• ETRI Journal
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• v.26 no.4
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• pp.315-320
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• 2004

This paper proposes a 10-${\mu}m$ thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low-temperature thermal oxidation (500 $^{\circ}C$ for 1 hr at $H_2O/O_2$) and a rapid thermal oxidation (RTO) process (1050 ${\circ}C$, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 ${\mu}m$ was about 10 to 50 $nA/cm^2$ in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW-type short stub on an OPSL prepared at a temperature of 1050 $^{\circ}C$ (1 hr at $H_2O/O_2$). Also, the measured working frequency of the CPW-type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW-type open stub on an OPSL prepared at a temperature of $1050^{\circ}C$ (1 hr at $H_2O/O_2$).

• Korean Journal of Food Science and Technology
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• v.31 no.5
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• pp.1171-1177
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• 1999

The changes on microstucture of recombinated gels with different ratio of amylose(A) and amylopectin(AP) which were isolated from nonwaxy rice starch were investigated by scanning electron microscope(SEM) and X-ray diffractometer. As the concentration of amylose was above 3%(1.08% of soluble amylose) in the amylose suspension, gel matrix became like a three-dimensional network. The microstructure of amylose gels showed a network including macroporous structure, but the higher the ratio of amylopectin content were, the firmer network were formed. In case of A/AP mixed gels(15%) with different amylose/amylopectin percent ratios ; 0/5, 5/10, 10/5, 15/0%, as the storage time of gels and the percent ratio of amylose content were increased, network was formed harder with thick films. While X-ray diffractograms of waxy rice starch which contained 100% amylopectin showed A type, those of purified amylose and amylopectin showed V type and amorphous patterns, respectively. Amylose(3%) gels added $2{\sim}3%$ amylopectin and A/AP mixed gels(15%) showed peak at $2{\theta}\;=\;17.0^{\circ}$which were shown B type crystallinity similar af retrograded starches. Also as the percent ratio of amylose content in mixed gels was increased, peak intensity wat increased.