• Journal of Magnetics
• /
• v.5 no.4
• /
• pp.124-129
• /
• 2000

$Sm_2Fe_{17}N_x$ film magnets were prepared using a $Sm_2Fe_{17}$ target in a $N_2$ gas atmosphere using a Nd-YAG pulsed laser ablation technique. The effect of nitrogen pressure, deposition temperature, pulse time and film thickness on the structure and magnetic properties of $Sm_2Fe_{17}N_x$ film were studied. Increasing the nitrogen pressure up to 5 atm led to the formation of complete $Sm_2Fe_{17}N_x$ compound. Optimized magnetic properties with the nitrogenation temperature in the range 500-53$0^{\circ}C$ could be obtained by extending the nitrogenation time up to 4 hours. Relatively low coercivities of 400~600 Oe were found in $Sm_2Fe_{17}N_x$films 50~100 m thick, while a $4\piM_s$ of 10$\sim$12 kG could be achieved. In-plane anisotropy, which was the basic goal in this study, was achieved by controlling the nitrogenation parameters.

• Journal of Sensor Science and Technology
• /
• v.17 no.6
• /
• pp.437-446
• /
• 2008

Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

• Journal of Sensor Science and Technology
• /
• v.4 no.2
• /
• pp.37-44
• /
• 1995

A coprecipitation method was used for preparing Ca and Pt doped $SnO_{2}$-based material. Crystallite size and specific surface area were investigated by TEM, XRD and BET analysis. $SnO_{2}(Ca)/Pt$ based thick film devices were prepared by a screen printing technique for hydrocarbon gas detecting. Then the electrical and sensing characteristics of devices were investigated. As Ca and Pt addition, the crystal growth of $SnO_{2}$ was suppressed during calcining and sintering, and the sensitivity of $SnO_{2}(Ca)/Pt$ thick film to gas was enhanced. Also any difference in the sensing properties has to be attributed to the Pt and Au electrode. For the 2000 ppm $CH_{4}$, the sensitivity of $SnO_{2}(Ca)/Pt$ thick film devices were about 83% at an operating temperature of $400^{\circ}C$.

• Solar Energy
• /
• v.8 no.2
• /
• pp.73-76
• /
• 1988

Thick films based on the mature crystalline silicon technology are expected to exhibit eversmaller cost reduction. The thin-film-based technology is, however, expected to exhibit a much sharper drop in cost as it develops. In this report, technology and recent R & D of thin film solar cell, such as amorphous silicon, cadnium telluride, copper indium diselenide and gallium arsenide, are described. Perspectives of world photovoltaic market and solar cell price are also described.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.12
• /
• pp.792-796
• /
• 2015

With high integration of electronic components, power inductors are also miniaturized. Recently, thick film processes for small size power inductors were developed and commercialized. However, the thick film process to prepare soft magnetic green sheets was not reported enough. In this study, we used Fe-Si magnetic and CIP (carbonyl iron powders) as starting materials to lead to a bimodal particle size distribution in the sheet. We proposed a newly developed 'Modified slurry preparation process' to get well dispersed condition even at high solid contents. Using the new process, it was possible to prepare a well dispersed slurry over 70 vol% of solid. BYK-103 was better than BYK-111 as dispersant in this slurry and the optimum amount was 0.6 wt%. The optimized slurry was formed into a sheet by tape casting process and then the sheet was laminated. We conformed that small size powder, large size powder, and epoxy resin were well dispersed in the green sheet.

• Transactions of the Korean hydrogen and new energy society
• /
• v.21 no.5
• /
• pp.375-382
• /
• 2010

A layered perovskite photocatalysts, $SrBi_2Nb_2O_9$ (SBN), was synthesized by the conventional solid-state reaction method and characterized by X-ray diffraction (XRD) and UV-visble spectrophotometry. The results showed that the structure of $SrBi_2Nb_2O_9$ is orthorhombic. Diffuse reflectance spectra for calcined and attrition-milled SBN showed the main absorption edges were less 400 nm, that is ultraviolet region. SBN under micron-sized powder was deposited on the $Al_2O_3$ by room temperature powder spray in vacuum process, so called aerosol deposition (AD), and nano-grained $SrBi_2Nb_2O_9$ photocatalytic thick film was fabricated. AD-deposited SBN thick films were characterized by XRD, scanning electron microscopy (SEM) and UV-visable spectrophotometry, Moreover, it was found that several nano-sized SBN film by AD process can improve the photocatalytic activity under visable reflectance.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.401-406
• /
• 2003

New planar discharge structured AC-PDP has been developed by using TFCS (Thick Film Ceramic Sheet) technology. By applying TFCS to AC-PDP, a sustaining electrode and scanning electrodes are embedded in the TFCS. It is shown that panel performances such as electrical and optical characteristics are superior to commercialized coplanar AC-PDP as well as cost reduction. Moreover the experimental result shows panel performances can be improved drastically by continuous development.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.311-312
• /
• 2008

$RuO_2$ 계열의 후막재료를 사용한 저항의 신뢰성시험을 실시하고 주요 고장 메커니즘을 확인하였다. 사용된 소자의 기판은 AlN 세라믹 기판이며, 후막재료로 $RuO_2$ paste를 프린팅하고 소결시킨 구조의 고주파용 저항(RF Termination)이다. 주요 고장 메커니즘은 후막(Thick Film)의 특성변화, 기판의 특성변화, 전극-후막 간의 접촉특성변화, Trimming 부위의 열화, 열팽창계수 차이에 의한 기계적 파손 등으로 알려져 있으며, 본 실험에서는 고장모드 분석을 위해 과부하시험, 고온동작시험 등을 포함한 신뢰성 환경시험과 수명시험을 실시하였다. 각 시험 결과 수명시험 후 전극-후막 간의 접합부 파괴가 관찰되었고, 열충격 시험 결과 후막의 crack이 관찰되었다.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2002.11a
• /
• pp.87-90
• /
• 2002

For the broad band wireless communications system, the composition of the millimeter wave system is needed. In other to commercialize that system, satisfaction of high frequency characteristic and low cost process is required. In this study, BPF which is very sensitive to the characteristic of fine line designed and fabricated using photoimageable thick film technology.

• Tribology and Lubricants
• /
• v.27 no.4
• /
• pp.193-197
• /
• 2011

Friction behavior of nanoporous anodic aluminum oxide(AAO) film was investigated. A 60 ${\mu}m$ thick AAO film having nanopores of 45 nm diameter with 105 nm interpore-diatance was fabricated by mild anodization process. The AAO film was then saturated with paraffinic oil. Reciprocating ball-on-flat sliding friction tests using 1 mm diameter steel ball as the counterpart were carried out with normal load ranging from 0.1 N to 1 N in an ambient environment. The morphology of worn surfaces were analyzed using scanning electron microscopy. The friction coefficient significantly increased with the increase of load. The boundary lubrication layer of paraffinic oil contributed to the lower friction at relatively low load (0.1 N), but it is less effective at high load (1 N). Plastic deformed layer patches were formed on the worn surface of oil-enriched AAO at relatively low load (0.1 N) without evidence of tribochemical reaction. On the other hand, thick tribolayers were formed on the worn surface of both oil-enriched and as-prepared AAO at relatively high load (1 N) due to tribochemical reaction and material transfer.