• 제목/요약/키워드: Thick film resistor

검색결과 38건 처리시간 0.02초

인쇄 및 소결조건이 AlN 기판용 후막저항체의 특성에 미치는 영향 (Effect of Screen Printing and Sintering Conditions on Properties of Thick Film Resistor on AlN Substrate)

  • 구본급
    • 한국세라믹학회지
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    • 제51권4호
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    • pp.344-349
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    • 2014
  • $RuO_2$-based high frequency thick-film resistor paste was printed at the speed of 10, 100, 300 mm/sec on the AlN substrate, and then sintered at between 750 and $900^{\circ}C$. The sintered thick films were characterized in terms of printing and sintering conditions. With increasing printing speed, the thickness and roughness of sintered film increased. The resistance of the thick film resistor was reduced by increasing the printing speed from 10 to 100 mm/sec, but did not significantly change at 300 mm/sec speed. With increasing sintering temperature, the surface roughness and thickness of sintered resistor film decreased. The reduction rate was large in case of fast printed resistor. The resistance of the resistor increased up to $800^{\circ}C$ with sintering temperature, but again decreased at the higher sintering temperature.

산화 주석 후막에 대하여 (On the Stannic Oxide Thick Film)

  • 박순자
    • 한국세라믹학회지
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    • 제12권1호
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    • pp.5-11
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    • 1975
  • Thick film resistor paste was made utilizing oxide materials such as SnO, SnO+Sb2O3, and SnO+Zn. The oxide materials were mixed respectively with Q-12 glass powder and finally suspended in ethyl cellulose dissolved in ethyl cellosolve. Thick film resistor was made by screen printing the paste on the alumina substrate and firing it at a suitable temperature. Among thick films made from the resistor paste, the thick film containing 85% SnO and fired at $600^{\circ}C$ demonstrated the finest electrical properties showing 10 K ohm in sheet resistance, 110 ppm/$^{\circ}C$ in TCR. In general, TCR of the thick films made from the oxide-mixture paste is good in linearity, therefore it is suggested the oxide-mixture paste is utilized as the negative thermistor.

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감광성 폴리머 저항 페이스트를 이용한 Low Tolerance 후막 저항체 (Thick Film Resistors with Low Tolerance Using Photosensitive Polymer Resistor Paste)

  • 김동국;박성대;이규복;경진범
    • 공업화학
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    • 제21권4호
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    • pp.411-416
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    • 2010
  • 본 연구에서는 알칼리 현상형 감광성 수지재료와 전도성 카본블랙을 이용하여 만들어진 감광성 폴리머 저항 페이스트를 이용하여 후막저항체의 허용편차(tolerance)를 개선하고자 하였다. 먼저 카본블랙과 감광성 수지의 선택이 폴리머 후막저항(polymer thick film resistor, PTFR)의 저항값의 범위와 허용편차의 수준에 미치는 영향을 조사하였다. 이후 테스트 기판상에 감광성 저항 페이스트를 도포하는 방법에 따른 저항값 허용편차의 차이를 평가하였다. 감광성 저항 페이스트를 스크린 인쇄를 이용하여 테스트 기판의 전면에 도포한 경우에는 테스트 기판상에서 균일한 두께의 후막을 형성하기 어렵기 때문에 위치에 따른 저항값의 허용편차가 크게 나타났다. 반면, 롤러를 이용하여 페이스트를 도포하였을 때, 전체 기판 면적에 균일한 두께의 저항체 후막을 형성할 수 있었으며, 저항값 평가 결과 ${\pm}10%$ 이내의 낮은 허용편차를 나타내었다. 포토공정을 이용한 정밀한 패터닝 공정과 롤러를 이용한 균일한 두께의 저항막 도포 공정을 결합함으로써 후막저항의 허용편차를 개선할 수 있었다.

폴리머 후막 저항체의 제작 및 경화 온도에 따른 저항 값 변화에 대한 연구 (Fabrication of polymer thick film resistor and study on resistance variation regarding curing temperature)

  • 유명재;이상명;박성대;강남기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.212-213
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    • 2006
  • Polymer thick film resistor paste was fabricated using various materials. Inorganic materials of carbon black and graphite were selected as fillers and epoxy resin was selected as organic material. Solvent with high boiling temperature was applied to adjust viscosity. A designed test coupon pattern was used to evaluate fabricated resistors. Aspect ratio of 1 was selected for evaluating resistor values. Electrical properties of fabricated resistors were measured and their values analyzed in relation to paste composition. PTF fabricated using carbon black as fillers achieved resistor value of $530{\Omega}/sq$.

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Analytical Quantification and Effect of Microstructure Development in Thick Film Resistor Processing

  • Lee, Byung Soo
    • 마이크로전자및패키징학회지
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    • 제19권4호
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    • pp.33-37
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    • 2012
  • Microstructure developments of $RuO_2$ based thick film resistors during firing as a function of glass viscosity were analytically quantified and its effect on the electrical property was investigated. The microstructure development was retarded as the viscosity of glass was increased. It was found that the viscosity range for each stage of microstructure development are as follows ; $7500-10^5Pa{\cdot}s$ for the glass sintering, $2000-7500Pa{\cdot}s$ for the glass island formation, $700-2000Pa{\cdot}s$ for the glass spreading, and $50-700Pa{\cdot}s$ for the infiltration. The sheet resistivity decreased as the viscosity of glass in the resistor film increased due to the higher chance of sintering for the conductive particles with the higher viscosity of the glass.

내장형 저항 기판의 신뢰성과 TCR 개선을 위한 후막 저항 페이스트에 관한 연구 (Thick Film Resistance Paste for Improving Reliability and TCR Properties of Embedded Resistor Board)

  • 이상명;유명재;박성대;강남기;남산
    • 마이크로전자및패키징학회지
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    • 제15권1호
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    • pp.27-31
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    • 2008
  • 전자 부품의 소형화 요구에 따라서 기존 기판의 상부에 실장 되는 저항 소자를 감소하기 위한 방안으로 후막 저항 페이스트를 인쇄하여 저항체를 형성 한 후에 내장하는 수동소자 내장기술이 활발히 연구되고 있다. 본 연구에서는 카본 블랙과 에폭시 수지를 혼합하여 $0.35{\sim}4k{\Omega}/sq$으로 넓은 저항 범위를 가지는 저온 열경화형 후막 저항 페이스트를 제작하였으며, Ni-Cr alloy와 $SiO_2$ 분말을 첨가하여 온도에 따른 저항 변화인 TCR(Temperature Coefficient Resistivity) 값을 $100ppm/^{\circ}C$으로 개선하였다. 최종적으로 제작된 저항 페이스트를 이용하여 내장 저항 기판을 제작하였으며 온도에 변화에 따른 안정적인 저항 특성과 신뢰성을 확보 할 수 있었다.

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세라믹 다이어프램을 이용한 후막 스트레인 게이지 압력센서 (Thick-Film Strain-gage Ceramic-Pressure Sensor)

  • 이성재;박하용;민남기
    • 한국전기전자재료학회논문지
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    • 제14권12호
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    • pp.987-993
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    • 2001
  • In this paper, we presents the construction details and output characteristics of a thick film piezoresistive strain gage. The thick film was printed on the ceramic diaphragm back side by screen printing and cured at 850$^{\circ}C$. The strain distribution and deflection on ceramic diaphragm were performed with finite-element method(FEM tool ANSYS-5.3). Various thick film strain gage characteristics were analysed, including nonlinearity, hysteresis, stability and sensitivity of thick film strain gages.

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동시 소성된 저항/저온 동시 소성 세라믹(LTCC) 이중층의 캠버에 영향을 미치는 인자 (Factors Influencing the Camber of Cofired Resistor/Low Temperature Cofired Ceramics (LTCC) Bi-Layers)

  • 홍옥연;민석홍
    • 한국재료학회지
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    • 제33권12호
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    • pp.537-549
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    • 2023
  • The sintering shrinkage behaviors of low temperature cofired ceramics (LTCC) and resistors were compared using commercial LTCC and thick-film resistor pastes, and factors influencing the camber of cofired resistor/LTCC bi-layers were also investigated. The onset of sintering shrinkage of the resistor occurred earlier than that of LTCC in all resistors, but the end of sintering shrinkage of the resistor occurred earlier or later than that of LTCC depending on the composition of the resistor. The sintering shrinkage end temperature and the sintering shrinkage temperature interval of the resistor increased as the RuO2/glass volume ratio of the resistor increased. The camber of cofired resistor/LTCC bi-layers was obtained using three different methods, all of which showed nearly identical trends. The camber of cofired resistor/LTCC bi-layers was not affected by either the difference in linear shrinkage strain after sintering between LTCC and resistors or the similarity of sintering shrinkage temperature ranges of LTCC and resistors. However, it was strongly affected by the RuO2/glass volume ratio of the resistor. The content of Ag and Pd had no effect on the sintering shrinkage end temperature or sintering shrinkage temperature interval of the resistor, or on the camber of cofired resistor/LTCC bi-layers.

감광성 폴리머 저항 페이스트 제조와 미세패턴 후막저항의 형성 (Fabrication of Photosensitive Polymer Resistor Paste and Formation of Finely-Patterned Thick Film Resistors)

  • 김동국;박성대;유명재;심성훈;경진범
    • 공업화학
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    • 제20권6호
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    • pp.622-627
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    • 2009
  • 알칼리 수용액에 현상이 가능한 감광성 수지재료와 전도성 카본블랙 필러를 이용하여 포토 패터닝이 가능한 폴리머 후막 저항 페이스트를 제조하고 평가하였다. 감광성 수지로는 인쇄회로기판의 보호층으로 주로 사용되는 photo solder resist(PSR)를 사용하여 자외선에 의한 노광 및 알칼리 수용액에의 현상이 가능하게 하였다. 감광성 폴리머 저항 페이스트를 제작한 후, PCB 테스트 보드를 이용하여 후막저항체의 전기적 특성을 평가하였다. 카본블랙의 첨가량에 따라 시트저항은 감소하였으나, 과량 첨가시에는 현상성에 한계를 나타내었다. 재경화에 따라서 시트저항이 감소하였으며, 카본블랙의 첨가량이 많을수록 그 변화율은 작게 나타났다. 포토공정을 적용하여, 미세 패터닝된 meander형 후막저항체를 제조할 수 있었고, 이 방법을 통하여 적은 면적에도 시트저항의 수십 배에 달하는 큰 저항값을 구현할 수 있었다.

Effect of Binder Glass Crystallization on Electrical Properties in $RuO_2$-Thick Film Resistor

  • Sungmin Kwon;Kim, Cheol-Young
    • The Korean Journal of Ceramics
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    • 제2권1호
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    • pp.33-38
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    • 1996
  • In thick film resistors, the characteristics of the frit and the reaction between glass frit and conductor material play an important role for their electrical properties. In this study, various glass frits in the system of $60RO{\cdot}20SiO_2$ $15B_2O_3{\cdot}5Al_2O_3$(RO=PbO, ZnO, CdO; mole%) were mixed with $RuO_2$ and coated on 96% alumina substrate. Only the glass frit containing PbO was reacted with $RuO_2$in$RuO_{2+}$-thick film resistor and produced the new crystalline phase of $Pb_2Ru_2O_{65}$. Their electrical resistivities strongly depend on the amount of $Pb_2Ru_2O_{65}$ crystalline phase obtained, which varied with firing temperature. The sheet resistivities of these resistors were varied from $10^3\; to\; 10^6\;{\Omega}/{\Box}$ depending on heat treatment, and the absolute value of TCR was decreased as the heat treatment temperature increaed. However, $RuO_2$ did not reacted with the glass frits containing ZnO nor CdO, and the resulting showed very high sheet resistivities.

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