• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.371-376
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• 1997

A 100*100.mu.m$^{2}$ aluminum micro mirror is designed and fabricated using a thick photoresist as a sacrificial layer andas a mold for nickel electroplating. The micro mirror is composed of aluminum mirror plate, two nickel support posts, two aluminum hinges, two address eletrodes, and two landing electrodes. The aluminum mirror plate,which is supported by two nickel support posts, is overhung about 10.mu.m from the silicon substrate. THe aluminum mirror plate is actuated like a seesaw by electrostatic force generated by electic potential difference applied between the mirror plate and the address electrode. This paper presents some methods to measure the optical and the dynamic characteristics of the fabricated micro mirror.

• 한국광학회지
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• 제16권6호
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• pp.508-515
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• 2005

MEMS 공정을 이용한 굴절렌즈 제작을 위하여, 슬릿 패턴을 갖는 마스크를 이동시키며 노광을 하는 가변 속도 이동식 마스크에 의한 노광 방법을 제안하였다. 감광제 면이 굴절렌즈의 곡면을 이루려면 감광제의 위치에 따른 노광 에너지의 분포를 조절해야 한다. 마스크의 패턴 형태와 이동 속돈 방향에 따라 감광제의 위치에 따른 노광 에너지의 분포를 이론적으로 분석하였으며, 감광제 박막에 임의의 곡면을 갖는 굴절렌즈 형상을 형성할 수 있음을 실험적으로 확인하였다. $100 {\mu}m$ 이상의 후막 감광제를 이용하거나, 혹은 곡면 형상을 갖는 얇은 감광제 형상을 마스크로 하여 이온식각을 수행하여 수백 ${\mu}m$ 정도의 최대높이를 갖는 렌즈 곡면형상을 제작 할 수 있었다.

• 마이크로전자및패키징학회지
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• 제7권4호
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• pp.23-29
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• 2000

사용되는 metal구분 없이 반도체 공정장비들을 사용함으로써 cross-contamination을 유발시킬 수 있다. 특히, copper(Cu)는 확산이 쉽게 되어 cross-contamination에 의해 수 ppm정도가 wafer에 오염되더라도 트랜지스터의 leakage current발생 요인으로 작용할 수 있기 때문에 Si-IC성능에 치명적인 영향을 미칠 수 있는데, Si-LSI 실험실에서 할 수 있는 공정과 Si-LSI 실험실을 나와 할 수 있는 공정으로 구분하여 최대한 Si-LSI 장비를 공유함으로써 최소한의 장비로 Cu cross-contamination문제를 해결할 수 있다. 즉, 전기도금을 할 때 전극으로 사용되어지는 TiW/Al sputtering, photoresist (PR) coating, solder bump형성을 위한 via형성까지는 Si-LSI 실험실에서 하고, 독립적인 다른 실험실에서 Cu-seed sputtering, solder 전기도금, 전극 etching, reflow공정을 하면 된다. 두꺼운 PR을 얻기 위하여 PR을 수회 도포(multiple coaling) 하고, 유기산 주석과 유기산 연의 비를 정확히 액 조성함으로서 Sn:Pb의 조성비가 6 : 4인 solder bump를 얻을 수 있었다. solder를 도금하기 전에 저속 도금으로 Cu를 도금하여, PR 표면의 Cu/Ti seed층을 via와 PR표면과의 저항 차를 이용하여 PR표면의 Cu-seed를 Cu도금 중에 etching 시킬 수 있다. 이러한 현상을 이용하여 선택적으로 via만 Cu를 도금하고 Ti층을 etching한 후, solder를 도금함으로써 저 비용으로 folder bump 높이가 60 $\mu\textrm{m}$ 이상 높고, 고 균일/고 밀도의 solder bump를 형성시킬 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.431-432
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• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• 한국광학회지
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• 제13권2호
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• pp.117-122
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• 2002

홀로그래픽 필름으로 제작된 그레이스케일 마스크를 통하여 두꺼운 포토레지스트를 자외선으로 근접 노광하여 주기 300 $\mu\textrm{m}$, 두께 17 $\mu\textrm{m}$, 초점거리 2.2 mm인 10$\times$10 미소렌즈 배열을 제작하였다. 그레이스케일 마스크는 컴퓨터로 설계한 미소렌즈 배열을 필름 출력기를 이용하여 고해상도 흑백 필름에 그레이스케일로 기록 및 현상하고 이를 다시 홀로그래픽 필름에 축소복사(6.6배)하여 제작하였다. 본 제작방법은 저렴한 비용으로 100%에 가까운 fill-factor를 얻을 수 있고, 비구면 렌즈를 구현하기가 쉽다는 장점을 가진다.

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권5호
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• pp.182-188
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• 2003

We have demonstrated a fluidic technique for self-assembly of microfabricated parts onto substrate using patterned shapes of magnetic force self-assembled monolayers (SAMs). The metal particles and the array were fabricated using the micromachining technique. The metal particles were in a multilayer structure (Au, Ti, and Ni). Sidewalls of patterned Ni dots on the array were covered by thick negative photoresist (SU-8), and the array was magnetized. The array and the particles were mixed in buffer solution, and were arranged by magnetic force interaction. Binding direction of the metal particle onto Ni dots was controlled by multilayer structure and direction of magnetization. A quarter of total Ni dots were covered by the particles. The binding direction of the particles was controllable, and condition of particles was almost even with the Au surface on top. The particles were successfully arranged on the array.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.8-8
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• 2008

Two-dimensional photonic quasicrystal (PQCs) template patterns have been fabricated on a $1.1{\mu}m$-thick DMI-150 photoresist using a multiple-exposure holographic method. A 442-nm HeCd laser was utilized as a light source and the holographic exposure was carried out at a fixed angle of $\theta=6^{\circ}$. After the first holographic exposure, the sample was rotated to a proper angle and the second exposure was performed to the same manner. This exposure process was repeated n/2 times to obtain n-fold symmetric PQC patterns and then the sample was developed. The fabricated PQCs exhibited 8, 10 and 12-fold rotational symmetry and the diffraction patterns using a 632.8-nm HeNe laser were observed for n-rotation symmetry corresponding n-fold PQCs. The fabricated PQC template patterns were examined using scanning electron microscopy(SEM). Transmission spectra were measured fourier transform infrared(FTIR) spectrometer.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.829-834
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• 2008

Two-dimensional photonic quasicrystal (PQCs) template patterns have been fabricated on a 1.1 ${\mu}m$-thick DMI-150 photoresist using a multiple-exposure holographic method. A 442-nm HeCd laser was utilized as a light source and the holographic exposure was carried out at a fixed angle of ${\theta}$ = 6$^{\circ}$. After the first holographic exposure, the sample was rotated to a proper angle and the second exposure was performed to the same manner. This exposure process was repeated n/2 times to obtain n-fold symmetric PQC patterns and then the sample was developed. The diffraction patterns of the fabricated PQC template were observed using a 632.8-nm HeNe laser. The fabricated PQCs exhibited 8, 10 and 12-fold rotational symmetry, which was in a good agreement with the interference simulation results. In addition, the diffraction patterns with n-rotation symmetry were observed for the corresponding n-fold PQCs. We believe that the multiple-exposure holography is a good method to fabricate the mesoscale PQCs with a high rotational symmetry.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.698-701
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• 2005

We have investigated experimentally a nano patterning using electron beam lithography for the nickel stamper fabrication. Recently, DVD and Blu-ray disk(BD) have nano-scale patterns in order to increase the storage density. Specially, BD has 100nm-scale patterns which are generally fabricated by electron beam lithography. In this paper, we found optimum condition of electron-beam lithography for 100nm-scale patterning. We controlled various conditions of EHP(acceleration voltage), beam current, dose and aperture size in order to obtain optimum conditions. We used 100nm-thick PMMA layer on a silicon wafer as photoresist. We found that EHP was the most dominant factor in electron-beam lithography.

• 센서학회지
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• 제28권4호
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• pp.251-255
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• 2019

We propose a two-step lithography process to minimize edge-bead issues caused by thick photoresist (PR) coating. In the conventional PR process, the edge bead can be efficiently removed by applying an edge-bead removal (EBR) process while rotating the silicon wafer at a high speed. However, applying conventional EBR to the production of desired PR mold with unique negative patterns cannot be used because a lower rpm of spin coating and a lower temperature in the soft bake process are required. To overcome this problem, a two-step lithography process was developed in this study and applied to the fabrication of a polydimethylsiloxane (PDMS) film having super-hydrophobic characteristics. Following UV exposure with a first photomask, the exposed part of the silicon wafer was selectively removed by applying a PR developer while rotating at a low rpm. Then, unique PR mold structures were prepared by employing an additional under-exposure process with a second mask, and the mold patterns were transferred to the PDMS. Results showed that the fabricated PDMS film based on the two-step lithography process reduced the height difference from 23% to 5%. In addition, the water contact angle was greatly improved by spraying of hydrophobic nanosilica on the dual-scaled PDMS surface.