• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.735-738
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• 2003

Downsizing electronics requires precision position control with an accuracy of sub-micron order, which demands development of ultra-fine displacive devices. Piezoelectric transducer is one of devices transferring electric field energy into mechanical energy and being capable for fine displacement control. The transducer has been widely used as fine Position control device Multilayer piezoelectric actuator, one of typical piezo-transducer, is fabricated by stacking alternatively ceramic and electrode layers several hundred times followed by cofiring process. Electrode material should be tolerable in the firing process maintaining at ceramic-sintering temperatures up to $1100{\sim}1300^{\circ}C$. Ag-Pd can be used as stable electrode material in heat treatment above $960^{\circ}C$. Besides, adding small quantity ceramic powder allow the actuator to be fabricated in a good shape by diminishing shrinkage difference between ceramic and electrode layers, resulting in avoidance of crack and delamination at and/or nearby interface between ceramic an electrode layers. This study presents synthesis of nano-oxide-added Ag/Pd powders and its feasibility to candidate material tolerable at high temperature. The powders were formed in a co-precipitation process of Ag and Pd in nano-oxide-dispersed solution where Ag and Pd precursors are melted in $HNO_3$ acid.

• 전자공학회논문지A
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• 제32A권2호
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• pp.96-110
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• 1995

Traveling-wave electrodes for the high-speed Ti:LiNbO$_{3}$ modulators are designed. For a solution to the problems of 1) phase-velocity mismatching between the optical wave and the Modulating M/W, 2) M/W electrode characteristic impedance mismateching, we assume devices with 1$\mu$m thick SiO$_{2}$ buffer layer between the electrode and the Ti:LiNbO$_{3}$ substrate. The electrode analyses are performed by the FEM using the second-order triangular elements. The optimum design parameters to satisfy the phase-velocity matching and the characteristic impedance matching are sought for. By use of the analyses' results, a Mach-Zehnder optical modulator with a CPW electrode is designed as an example. the band-width estimation is also illustrated.

• Journal of Welding and Joining
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• 제15권2호
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• pp.89-99
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• 1997

Spot welding is one of the important welding processes for the construction of thin metal sheet. Because of low investment cost, alternating welding current is widely applied for power source. Direct current type could be, however, recommened for high quality weldment. In this study, the effect of welding current type on the weldability and the electrode life in spot welding of aluminium alloy were investigated. Various welding tests were done by using three phase direct and alternating welding current, respectively. In spite of high variation of welding force, weld quality and electrode life with alternating welding current were shown better results than those with direct current for 2mm thick alumininum alloy sheets. This was due to excessive erosion of the positive electrode in direct welding current compared with the negative one. On the contrary to 2mm sheets, the welding parameters of alternating current for 1mm sheets must be carefully selected.

• 전자공학회논문지A
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• 제29A권8호
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• pp.41-48
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• 1992

The characteristics of traveling-wave electrodes for high-frequency electroptic integrated devices are described from the view point of improvement of phase-matching based on the conformal mapping method. Specific calculations of the characteristic impedance, effective microwave index, and eletrode loss for asymmetric coplanar strip(ACPS) and coplanar waveguide(CPW) electrode structures are presented as a function of the geometric electrode parameters including the electrode thickness and buffer layer thickness. 5-10(x10S0-6Tm) thick Au-ACPS electrodes were successfully fabricated by electroplating and ECR etcher. The improvement of modulation bandwidth can be theoretically observed from the combination of electrode and buffer layer thickness.

• 센서학회지
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• 제4권2호
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• pp.37-44
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• 1995

공침법을 이용하여 Ca 및 Pt 가 첨가된 $SnO_{2}$ 미세 분말을 제조하였다. 제조한 미세분말에 대해 TEM, XRD 및 BET 분석으로 결정크기 및 비표면적을 분석하였으며, 제조한 원료분말을 이용하여 스크린 인쇄법으로 후막형 가스 감지 소자를 제작하고, 그 특성과 탄화수소계가스에 대한 감지 특성을 조사하였다. 첨가된 Ca 및 Pt에 의해 하소와 소성의 열처리 과정 중에 $SnO_{2}$ 결정 성장이 억제되었으며, 탄화수소계가스에 대한 응답특성의 향상을 가져왔다. 한편, 소자의 전극으로써 Au 와 Pt를 사용하여 비교 분석하였는데, Au를 전극으로 사용할 경우에 Pt에 비해 가스 감응 특성 면에서 큰 저하를 가져왔다. 이는 Pt 전극도 $CH_{4}$의 산화에 기여했기 때문이다. Ca 및 Pt를 각각 0.1, 1 wt% 첨가한 $SnO_{2}$ 후막소자의 경우 2000 ppm의 $CH_{4}$에 대해 약 83%의 감도를 보였다.

• 전기화학회지
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• 제25권1호
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• pp.32-41
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• 2022

Various steps in the electrode production process, such as slurry mixing, slurry coating, drying, and calendaring, directly affect the quality and, consequently, mechanical properties and electrochemical performance of electrodes. Herein, a new method of slurry coating is developed: Double-coated electrode. Contrary to single-coated electrode, the cathode is prepared by double coating, wherein each coat is of half the total loading mass of the single-coated electrode. Each coat is dried and calendared. It is found that the double-coated electrode possesses more uniform pore distribution and higher electrode density and allows lesser extent of particle segregation than the single-coated electrode. Consequently, the double-coated electrode exhibits higher adhesion strength (74.7 N m^-1) than the single-coated electrode (57.8 N m^-1). Moreover, the double-coated electrode exhibits lower electric resistance (0.152 Ω cm^-2) than the single-coated electrode (0.177 Ω cm^-2). Compared to the single-coated electrode, the double-coated electrode displays higher electrochemical performance by exhibiting better rate capability, especially at higher C rates, and higher long-term cycling performance. Despite its simplicity, the proposed method allows effective electrode preparation by facilitating high electrochemical performance and is applicable for the large-scale production of high-energy-density electrodes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.615-618
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• 2004

The piezoelectricity and polarization of multilayer ceramic actuators, being designed to stack ceramic layer and electrode layer alternately, were investigated under a consideration of geometry, the thickness ratio of the ceramic layer to electrode layer The actuators were fabricated by tape-casting of $0.42PbTiO_3-0.38PbZrO_3-0.2Pb(Mn_{1/3}Nb_{2/3})O_3$ followed by laminating, burn-out and co-firing process. The actuators of $5\times5mm^2$ in area were formed in a way that $60{\sim}200{\mu}m$ thick ceramics were stacked 10 times alternately with $5{\mu}m$ thick electrode. Increase in polarization and electric field-displacement with increasing thickness ratio of the ceramic/electrode layer and thickness/cross section ratio were attributed to the change of $non-180^{\circ}/180^{\circ}$ domain ratio which was affected by the interlayer internal stress and Poisson ratio of ceramic layer. The piezoelectricity and actuation behaviors were found to be dependent upon the volume ratio (or thickness ratio) of ceramic layer relative to ceramic layer. Concerning with the existence of internal stress, the field-induced polarization and deformation were described in the multilayer actuator.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1103-1106
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• 2006

We have presented a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_2O_3$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_2O_3$ as both a top gate dielectric and a passivation layer is reported. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_2O_3$ as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure has been successfully understood by an analysis of electrostatic potential.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.294-299
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• 2000

For practical application as a humidity sensor SnO$_2$thick films devices were fabricated on the refresh type electrode by screen printing method and their material and humidity sensing properties were investigated. As a function of Sb$_{2}$/O$_{3}$ addition rate grain size was increased while porosity and initial resistance were rapidly decreased. And the area of resistance variation according to relative humidity was decreased with increasing heat treatment temperature. SnO$_2$thick film device heat treated at 95$0^{\circ}C$ and contained 0.05mole% Sb$_{2}$/O$_{3}$ had a best humidity sensing properties. From this result it is conformed that humidity sensing properties of SnO$_2$thick film devices could be approved by very small amount of Sb$_{2}$/O$_{3}$ addition.

• Journal of Information Display
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• 제7권3호
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• pp.27-30
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• 2006

This paper presents a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_{2}O_{3}$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_{2}O_{3}$ as both a top gate dielectric and a passivation layer was investigated. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric was changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_{2}O_{3}$ as a top gate dielectric was changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode was changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure was successfully investigated by an analysis of electrostatic potential.