• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.134-134
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• 2008

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1998.10b
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• pp.20-20
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• 1998

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1995.11a
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• pp.13-13
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• 1995

• Journal of Magnetics
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• v.21 no.2
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• pp.159-163
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• 2016

Antiferromagnet (AFM)/ferromagnet (FM) bilayer structures are widely used in the magnetic devices of sensor and memory applications, as AFM materials can induce unidirectional anisotropy of the FM material via exchange coupling. The strength of the exchange coupling is known to be sensitive to quality of the interface of the AFM/FM bilayers. In this study, we utilize proton irradiation to modify the interface structures and investigate its effect on the magnetic properties of AFM/FM structures, including the exchange bias and magnetic thermoelectric effect. The magnetic properties of IrMn/CoFeB structures with various IrMn thicknesses are characterized after they are exposed to a proton beam of 3 MeV and $1{\sim}5{\times}10^{14}ions/cm^2$. We observe that the magnetic moment is gradually reduced as the amount of the dose is increased. On the other hand, the exchange bias field and thermoelectric voltage are not significantly affected by proton irradiation. This indicates that proton irradiation has more of an influence on the bulk property of the FM CoFeB layer and less of an effect on the IrMn/CoFeB interface.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.584-590
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• 1998

The microstructures of finely distributed Si-phases in $\beta$-$FeSi_2$ thermoelectric matrix, were produced by heat-treating the melt-cast ingots of single $\alpha$-$Fe_2Si_5$ phase at 730~85$0^{\circ}C$ for 4~20 hours, or by resistance-hot-pressing the mechanically alloyed powders ordinarily consisting of $\varepsilon$-FeSi and Si phases at 760~85$0^{\circ}C$ for 10 minutes of composition. $(Fe_{0.98}Mn_{0.02})_xSi_2(x{\leq$}1) The size and interspacing of dispersed Si-phases were able to control within a range of 0.05~0.27$\mu\textrm{m}$ and 0.2~0.6$\mu\textrm{m}$ by variations of heat treatment temperature and sintering temperature as well as the composition. respectively. The dispersion of Si- phases was expected to be effective for the reduction of thermal conductivity responsible for the increment of thermoelectric figure of merit.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.41-49
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• 2008

Thermoelectric properties of the n-type Bi-Te and the p-type Bi-Sb-Te films were measured and the growth behaviors of the electrodeposited Bi-Te and Bi-Sb-Te nanowires were characterized. Filling ratios of 81% and 77% were obtained for electrodeposition of the Bi-Te and the Bi-Sb-Te nanowires, respectively, into the nano pores of 200 nm-diameter of an alumina template. A thermoelectric module, composed of the Bi-Te nanowires and the Bi-Sb-Te nanowires was processed by electrodeposition, and a resistance value of $15{\Omega}$ was measured between the Ni electrodes formed on the Bi-Te nanowires and the Bi-Sb-Te nanowires of the module.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.33-38
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• 2012

An in-plane thermoelectric sensor was processed on a glass substrate by evaporation of the n-type Bi-Te and p-type Sb-Te thin films, and its sensing characteristics were evaluated. The n-type Bi-Te thins film used to fabricate the inplane sensor exhibited a Seebeck coefficient of -165 ${\mu}V$/K and a power factor of $80{\times}10^{-4}W/K^2-m$. The p-type Sb-Te thin film used to fabricate the in-plane sensor exhibited a Seebeck coefficient of 142 ${\mu}V$/K and a power factor of $51.7{\times}10^{-4}W/K^2-m$. The in-plane thermoelectric sensor consisting of 15 pairs of the n-type Bi-Te and the p-type Sb-Te evaporated thin films exhibited a sensitivity of 2.8 mV/K.

• Korean Journal of Materials Research
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• v.19 no.4
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• pp.186-191
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• 2009

Thermoelectric power and resistivity are measured for the perovskite $LaNi_{1-x}Ti_xO_3$ ($x{\leq}0.5$) in the temperature range 77 K - 300 K. The measured thermoelectric power of $LaNi_{1-x}Ti_xO_3$ ($x{\leq}0.5$) increases linearly with temperature and is represented by A + BT. The x = 0.1 sample showed metallic behavior, the x = 0.3 showed metal and insulating transition around 150 K, and x = 0.5 showed insulating behavior the over the whole temperature range. The electrical resistivity of x = 0.1 shows linear temperature dependence over the whole temperature range and $T^2$ dependence. On the other hand, the electrical resistivity of x = 0.3 shows a linear relation between $ln{\rho}$ and $T^{-1/4}$ (variable range hopping mechanism) in the range of 77 K to 150 K. For x = 0.5, the temperature dependence of resistivity is characteristic of insulating materials; the resistivity data was fitted to an exponential law, such as ln(${\rho}/T$) and $T^{-1}$, which is usually attributed to a small polaron hopping mechanism. These experimental results are interpreted in terms of the spin polaron (x = 0.1) and variable range hopping (x = 0.3) or small polaron hopping (x = 0.5) of an almost localized $Ni^{3+}$ 3d polaron.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.132-136
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• 2001

Iron- silicide has been produced by mechanical alloying process and consolidated by hot pressing. As-consolidated iron silicides were consisted of $\beta$-FeSi$_2$ phase, and untransformed mixture of $\alpha$-$Fe_2Si_5$ and $\varepsilon$-FeSi phases. Isothermal annealing has been carried out to induce the transformation to a thermoelectric semiconducting $\beta$-$FeSi_2$ phase. The condition for $\beta$-FeSi$_2$ transformation was investigated by utilizing DTA, SEM, TEM and XRD analysis. The phase transformation was shown to be taken place by a vacuum isothermal annealing at $830^{\circ}C$ for 24 hours. The mechanical and thermoelectric properties of $\beta$-FeSi$_2$ materials before and after isothermal annealing were characterized in this study.

• Current Applied Physics
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• v.18 no.12
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• pp.1513-1522
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• 2018

Bismuth telluride ($Bi_2Te_3$) thin films were prepared with various electrolyte temperatures ($10^{\circ}C-70^{\circ}C$) and concentrations [$Bi(NO_3)_3$ and $TeO_2:1.25-5.0mM$] in this study. The surface morphologies differed significantly between the experiments in which these two electrodeposition conditions were separately adjusted even though the applied current density was in the same range in both cases. At higher electrolyte temperatures, a dendrite crystal structure appeared on the film surface. However, the surface morphology did not change significantly as the electrolyte concentration increased. The dendrite crystal structure formation in the former case may have been caused by the diffusion lengths of the ions increasing with increasing electrolyte temperature. In such a state, the reactive points primarily occur at the tops of spiked areas, leading to dendrite crystal structure formation. In addition, the in-plane thermoelectric properties of $Bi_2Te_3$ thin films were measured at approximately 300 K. The power factor decreased drastically as the electrolyte temperature increased because of the decrease in electrical conductivity due to the dendrite crystal structure. However, the power factor did not strongly depend on the electrolyte concentration. The highest power factor [$1.08{\mu}W/(cm{\cdot}K^2$)] was obtained at 3.75 mM. Therefore, to produce electrodeposited $Bi_2Te_3$ films with improved thermoelectric performances and relatively high deposition rates, the electrolyte temperature should be relatively low ($30^{\circ}C$) and the electrolyte concentration should be set at 3.75 mM.