• 한국재료학회지
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• 제15권10호
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• pp.667-670
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• 2005

Binary skutterudite $CoSb_3$ compounds were prepared by the arc melting and hot pressing processes and their thermoelectric properties were investigated in the range from 300 to 600 K. Annealing effect was correlated to phase transformation and homogenization. Thermoelectric properties of the arc-melted and hot-pressed $CoSb_3$ were discussed and compared. Undoped intrinsic $CoSb_3$ prepared by the arc melting showed p-type conduction, while it showed metallic behavior with increasing measuring temperature. However, hot pressed specimens showed n-type conduction, possibly due to Sb evaporation. Thermoelectric properties were remarkably improved by annealing In vacuum and they were closely related to phase transformation.

• 한국재료학회지
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• 제22권6호
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• pp.280-284
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• 2012

Bismuth antimony telluride (BiSbTe) thermoelectric materials were successfully prepared by a spark plasma sintering process. Crystalline BiSbTe ingots were crushed into small pieces and then attrition milled into fine powders of about 300 nm ~ 2${\mu}m$ size under argon gas. Spark plasma sintering was applied on the BiSbTe powders at 240, 320, and $380^{\circ}C$, respectively, under a pressure of 40 MPa in vacuum. The heating rate was $50^{\circ}C$/min and the holding time at the sintering temperature was 10 min. At all sintering temperatures, high density bulk BiSbTe was successfully obtained. The XRD patterns verify that all samples were well matched with the $Bi_{0.5}Sb_{1.5}Te_{3}$. Seebeck coefficient (S), electric conductivity (${\sigma}$) and thermal conductivity (k) were evaluated in a temperature range of $25{\sim}300^{\circ}C$. The thermoelectric properties of BiSbTe were evaluated by the thermoelectric figure of merit, ZT (ZT = $S^2{\sigma}T$/k). The grain size and electric conductivity of sintered BiSbTe increased as the sintering temperature increased but the thermal conductivity was similar at all sintering temperatures. Grain growth reduced the carrier concentration, because grain growth reduced the grain boundaries, which serve as acceptors. Meanwhile, the carrier mobility was greatly increased and the electric conductivity was also improved. Consequentially, the grains grew with increasing sintering temperature and the figure of merit was improved.

• 한국재료학회지
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• 제20권6호
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• pp.326-330
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• 2010

$CoSb_3$ Skutterudites materials have high potential for thermoelectric application at mid-temperature range because of their superior thermoelectric properties via control of charge carrier density and substitution of foreign atoms. Improvement of thermoelectric properties is expected for the ternary solid solution developed by substitution of foreign atoms having different valances into the $CoSb_3$ matrix. In this study, ternary solid solutions with a stoichiometry of $Co_{1-x}Ni_xSb_3$ x = 0.01, 0.05, 0.1, 0.2, $CoSb_{3-y}Te_y$, y = 0.1, 0.2, 0.3 were prepared by the Spark Plasma Sintering (SPS) system. Before the SPS synthesis, the ingots were synthesized by vacuum induction melting and followed by annealing. For phase analysis X-ray powder diffraction patterns were checked. All the samples were confirmed as single phase; however, with samples that were more doped than the solubility limit some secondary phases were detected. All the samples doped with Ni and Te atoms showed a negative Seebeck coefficient and their electrical conductivities increased with the doping amount up to the solubility limit. For the samples prepared by SPS the maximum value for dimensionless figure of merit reached 0.26, 0.42 for $Co_{0.9}Ni_{0.1}Sb_3$, $CoSb_{2.8}Te_{0.2}$ at 690 K, respectively. These results show that the SPS method is effective in this system and Ni/Te dopants are also effective for increasing thermoelectric properties of this system.

• 한국산학기술학회논문지
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• 제16권1호
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• pp.43-49
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• 2015

현재의 컴퓨터는 고성능화, 다기능화, 소형화, 경량화 등의 이유로 인해 기기 내부에서 발생하는 열량이 증가하고 있는 추세이다. 컴퓨터의 성능을 높이고 수명을 연장하기 위해서는 발열을 효과적으로 제어할 수 있어야 한다. 본 연구에서는 열전소자를 이용한 열전냉각시스템을 구성하여 컴퓨터에 설치하였고, 실험을 통해 기존의 공기냉각시스템을 사용한 컴퓨터 내부의 온도분포와 열전냉각시스템을 함께 사용한 컴퓨터 내부의 온도분포를 측정한 후, 이를 비교하여 열전냉각시스템의 발열제어 성능을 알아보고자 하였다. 또한, 열전냉각시스템이 기존의 컴퓨터 냉각시스템을 대처할 수 있는 성능을 낼 수 있는지 예측해 보기 위해서 기존의 냉각시스템을 사용한 컴퓨터와 열전냉각시스템만을 사용한 컴퓨터 내부의 온도분포를 수치해석을 통해 예측하고 비교해 보았다.

• 한국세라믹학회지
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• 제40권6호
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• pp.560-565
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• 2003

방전 플라즈마 소결법(SPS: Spark Plasma Sintering)을 이용하여 800~100$0^{\circ}C$의 낮은 소결 온도에서 완전 치밀화를 이루는 M-doped ZnO를 (M=Al, Ni) 제조하여 그 소결 특성과 미세구조를 분석하였다. 전자현미경 분석 결과, NiO의 첨가는 ZnO 결정격자와의 고용체 형성을 촉진시키고 결정립 성장을 유발하였고, A1$_2$O$_3$는 순수한 ZnO 소결 시 나타나는 입계에서의 증발현상을 제어하고, 이차상 형성을 통하여 결정립 성장을 억제함을 확인할 수 있었다 NiO와 $Al_2$O$_3$를 동시에 첨가한 시편이 가장 우수한 미세구조가 형성됨을 확인하였고, SEM-EBSP (Electron Back-scattered Diffraction Pattern) 분석 결과 또한 우수한 결정립계 분포를 가지고 있음을 확인하였다. 이러한, 소결체의 우수한 미세구조적 특징은 carrier 농도 증가에 따른 전기 전도도와 증가 및 phonon scattering 효과에 의한 열전도도의 감소 효과를 유발하여 ZnO의 열전 특성을 향상시키리라 사료된다.

• 한국재료학회지
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• 제32권3호
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• pp.132-138
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• 2022

Zintl phase Mg₃Sb₂ is a promising thermoelectric material in medium to high temperature range due to its low band gap energy and characteristic electron-crystal phonon-glass behavior. P-type Mg₃Sb₂ has conventionally exhibited lower thermoelectric properties compared to its n-type counterparts, which have poor electrical conductivity. To address these problems, a small amount of Sn doping was considered in this alloy system. P-type Mg₃Sb₂ was synthesized by controlled melting, pulverizing, and subsequent vacuum hot pressing (VHP) method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to investigate phases and microstructure development during the process. Single phase Mg₃Sb₂ was successfully formed when 16 at.% of Mg was excessively added to the system. Nominal compositions of Mg_3.8Sb_2-xSn_x (0 ≤ x ≤ 0.008) were considered in this study. Thermoelectric properties were evaluated in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity. A peak ZT value ≈ 0.32 was found for the specimen Mg_3.8Sb_1.994Sn_0.006 at 873 K, showing an improved ZT value compared to intrinsic one. Transport properties were also evaluated and discussed.

• Composites Research
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• 제34권6호
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• pp.434-439
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• 2021

그래핀과 폴리 아닐린은 기존의 무기물 기반 열전 소재의 단점을 극복하고 유연한 열전 소자에 응용할 수 있는 유기물 기반 열전 소재이다. 본 연구에서는 그래핀-폴리 아닐린 복합체를 합성하고 빛에 의해 유도되는 광열전 특성을 측정하였다. 그래핀-폴리 아닐린 복합체는 그래핀과 폴리 아닐린을 공유결합으로 연결하기 위해 산화 그래핀에 아민 작용기를 도입하였고 산화 그래핀을 다시 환원하여 환원된 산화 그래핀을 얻은 뒤 아닐린과 중합하여 그래핀-폴리 아닐린 복합체를 합성하였다. 최적의 광열전 효과를 기대하기 위해 아닐린의 함유량을 변화하여 그래핀-폴리 아닐린 복합체를 제조하였고, FT-IR과 라만 분석을 통하여 화학 구조와 조성을 확인하였다. 광전류와 광전압 특성은 외부 전기장이 없이 빛을 비대칭으로 조사하여 아닐린 함유량에 따른 전류와 전압을 분석하였다. 아닐린의 함량이 증가할수록 그래핀-폴리 아닐린 복합체의 광전류가 증가하는 전기 전도도와 같은 경향을 보였고 광전압은 빛에 의해 열에너지로 전환되어 나타나는 그래핀-폴리 아닐린 복합체의 온도변화와 관련 있음을 확인하였다.

• 한국지열·수열에너지학회논문집
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• 제14권3호
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• pp.29-34
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• 2018

To present the design direction of the thermoelectric module (TEM) refrigerator, analysis of the effect of the design parameters on the energy efficiency and performance of the refrigerator is performed. The design parameters considered are the cooling capacity of the TEM and the heat transfer performance of the heating and cooling surface of the TEM. The heat transfer performance is the most effective design parameter for improving cooling power. The smaller ΔT and cooling capacity of the TEM make the higher efficiency of the refrigerator.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 추계학술대회 논문집
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• pp.711-712
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• 2009

MCP 기술을 이용한 반도체 칩에서 문제가 되는 방열문제를 해결하기 위한 방법으로 열전 냉각 소자를 이용하여 열을 방출 시키는 방법에 관하여 연구를 수행하였다. 시뮬레이션을 통하여 열전 소자가 작동할 때, 흡수하는 열량을 계산할 수 있었으며, 열전 소자의 냉각 성능도 평가 할 수 있었다. 이러한 열 해석 및 열전 해석을 통하여 적층 구조의 MCP 모듈을 위한 열 설계 및 효율적 냉각을 가능하게 할 수 있을 것이다.

• 한국세라믹학회지
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• 제33권1호
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• pp.74-82
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• 1996

Fe-Si based powders prepare by melting the metals in the composition of FeSi2,.Fe0.95Mn0.05Si2 and Fe0.95Co0.05Si0.2 were used as the starting materials together with a commercial FeSi2 powder to study the effect of oxidation on their thermoelectric properties. The powders were heated at 650~80$0^{\circ}C$ in dired air before forming and sintering at 1190 and 120$0^{\circ}C$ in Ar+7%H2. The microstructure and phases of the annealed specimens were observed using the optical microscopty SEM, EDS and XRD. The thermoelectric properties of the specimens were also measured. The temperature at which Seebe다 coefficient showed the maximum value increased with the degree of oxidation. Electrical conductivity showed a tendency to decrease in the oxidized samples regardless of their compositions. Seebeck coefficient of the specimen showed almost the same value even after oxidation which may be explained by the formation of the discontinuous second phases from impurities in the oxidized specimens.