• Title/Summary/Keyword: Thermoelectric Effect

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Thermoelectric Property and p-n Transition Mechanism of Hot Pressed Bi4/3Sb2/3Te3 ($Bi_{4/3}Sb_{2/3}Te_3$ 가압소결체의 열전특성과 p-n 전이기구)

  • 박태호;유한일;심재동
    • Journal of the Korean Ceramic Society
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    • v.29 no.11
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    • pp.855-862
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    • 1992
  • Thermoelectric power, electrical conductivity and Hall effect were measured, as functions of temperature in the range of 100 to 600 K, on polycrystalline Bi4/3Sb2/3Te3 which had been prepared via uniaxial hot-pressing at different temperatures in the range of 373 K to 773 K, aiming at searching a profitable processing route to a polycrystalline thermoelectric material, a promising, viable alternative to a single crystalline one. It was found that, with increasing temperature of pressing under a fixed pressure, the material, normally a p-type prior to being hot-pressed, underwent a transition to n-type. This transition was confirmed to be due to plastic deformation during hot-pressing and interpreted as being attributed to the change of the major ionic defect BiTe' into TeBi˙at temperature high enough for structure elements mobility. Thermoelectric figure-of-merit of the hot-pressed material was discussed in connection with the p-n transition in addition to microstructure.

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Thermoelectric Properties of PbTe Sintered Body Fabricated by Mechanical Alloying Process (기계적합금화 공정에 의해 제조된 PbTe 소결체의 열전특성)

  • 이길근;정해용;이병우
    • Journal of Powder Materials
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    • v.8 no.2
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    • pp.110-116
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    • 2001
  • Abstract To investigate the effect of mechanical alloying process to thermoelectric properties of PbTe sintered body, Pb-Te mixed powder with Pb : Te : 1 : 1 composition was mechanically alloyed using tumbler-ball mill. Thermoelectric properties of the sintered body were evaluated by measuring of the Seebeck coefficient and specific electric resistivity from the room temperature to 50$0^{\circ}C$. Sintered body of only mechanically alloyed PbTe powder showed p-type behavior at the room temperature, and occurred type transition from p-type to n-type at about 30$0^{\circ}C$. PbTe sintered body which was fabricated using heat treated powder in $H_2$ atmosphere after mechanical alloying showed stable n-type behavior under 50$0^{\circ}C$. N-type PbTe sintered body fabricated by mechanical alloying process had 4 times higher power factor than that fabricated by the melt-crushing process. Application of a mechanical alloying process to fabricate of n-type PbTe thermoelectric material seemed to be useful to increase the power factor of PbTe sintered body.

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Design and Fabrication of Laser Diode Integrated with Peltier Cooler (열전 냉각기가 집적된 레이저 다이오드)

  • 이상일;박정호
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.1
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    • pp.159-165
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    • 1995
  • A double-heterostructure mesa-stripe-geometry laser diode integrated with thermoelectric Peltier cooler has been designed and fabricated. Epi-layers have been grown by metal organic chemical vapor deposition(MOCVD) method. Peltier cooling effect has been measured for devices with a mesa width of 14$\mu$m and a cavity length of 380$\mu$m. The effects of thermoelectric cooling could be shown by measuring the optical output of the laser with the increase of the current in the thermoelectric cooler. While the input courrent of the laser was maintained at 250mA, the optical output was decreased from 4.8mW to 3.8mW due to heating, but with the thermoelectric cooler on the optical output power was recovered by more than 40%. The results show that the complicated cooling device is not needed since the cooling can be achevied by the developement of the fabrication processing.

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Study on Characteristics of Heat Exchangers Using Thermoelectric Modules (열전소자를 이용한 열교환기 특성 고찰)

  • 박용군;권동호;김성도;전재수;오범규;김상민
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.832-835
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    • 2003
  • This paper presents the investigation and development of heat exchangers incorporated with thermoelectric modules. Firstly, the characteristics of the modules themselves are evaluated with respect to the applied DC power. Then, the modules-based heat exchangers with an amplification apparatus to enhance cooling effects are designed and developed. The cooling performance of the proposed heat exchangers is experimentally investigated with respect to the magnitude and pattern of input DC power, along with cooling liquids. The results denote that the heat exchangers using thermoelectric modules can be effectively used in the field of the various cooling system.

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Heat Radiation of Multichip 10W LED Light Using Thermoelectric Module(TEM) (열전소자를 이용한 10W급 멀티칩 LED조명의 방열)

  • Cho, Young-Tae
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.21 no.1
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    • pp.46-50
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    • 2012
  • This paper amis at improving the heat radiation performance of thermoelectric module (TEM) for a commercialization of high-powered LED light with using a multichip LED module. In addition, a 10W multichip LED light was prepared for the heat performance on radiating of which LED light was made for a use of testing by the driving of the thermoelectric module. So, it was found that about 30% in the effect of temperature reduction was confirmed if compared with the radiation heat by heat sink only.

The Electronic and Thermoelectric Properties of Si1-xVx Alloys from First Principles

  • Ramanathan, Amall Ahmed;Khalifeh, Jamil Mahmoud
    • Applied Microscopy
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    • v.47 no.3
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    • pp.105-109
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    • 2017
  • The effect of temperature and vanadium metal concentration on the electronic and thermoelectric properties of Si in the diamond cubic structure has been investigated using a combination of density functional theory simulations and the semi classical Boltzmann's theory. The BotzTrap code within the constant relaxation time approximation has been used to obtain the Seebeck coefficient and other transport properties of interest for alloys of the structure $Si_{1-x}V_x$, where x is 0, 0.125, 0.25, 0.375, and 0.5. The thermoelectric properties have been extracted for a temperature range of 300 K to 1,000 K. The general trend with V atom substitution for Si causes the Seeback coefficient to increase and the thermal conductivity to decrease for the various alloys. The optimum values are for $Si_5V_3$ and $Si_4V_4$ alloys for charge carrier concentrations of $10^{21}cm^{-3}$ in the mid temperature range of 500~800 K. This is a very desirable effect for a promising thermoelectric and the figure of merit ZT approaches 0.2 at 600 K for the p-type $Si_5V_3$ alloy.

Investigation of Ball Size Effect on Microstructure and Thermoelectric Properties of p-type BiSbTe by Mechanical Alloying

  • Lwin, May Likha;Yoon, Sang-min;Madavali, Babu;Lee, Chul-Hee;Hong, Soon-Jik
    • Journal of Powder Materials
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    • v.23 no.2
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    • pp.120-125
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    • 2016
  • P-type ternary $Bi_{0.5}Sb_{1.5}Te_3$ alloys are fabricated via mechanical alloying (MA) and spark plasma sintering (SPS). Different ball sizes are used in the MA process, and their effect on the microstructure; hardness, and thermoelectric properties of the p-type BiSbTe alloys are investigated. The phases of milled powders and bulks are identified using an X-ray diffraction technique. The morphology of milled powders and fracture surface of compacted samples are examined using scanning electron microscopy. The morphology, phase, and grain structures of the samples are not altered by the use of different ball sizes in the MA process. Measurements of the thermoelectric (TE) transport properties including the electrical conductivity, Seebeck coefficient, and power factor are measured at temperatures of 300-400 K for samples treated by SPS. The TE properties do not depend on the ball size used in the MA process.