• 천문학회보
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• 제35권1호
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• pp.40.1-40.1
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• 2010

The Main payload of the STSAT-3 (Korea Science & Technology Satellite-3), MIRIS (Multipurpose Infra-Red Imaging System) has been developed for last 3 years by KASI, and its Flight Model (FM) is now being developed as the final stage. All optical lenses and the opto-mechanical components of the FM have been completely fabricated with slight modifications that have been made to some components based on the Engineering Qualification Model (EQM) performances. The components of the telescope have been assembled and the test results show its optical performances are acceptable for required specifications in visual wavelength (@633 nm) at room temperature. The ensuing focal plane integration and focus test will be made soon using the vacuum chamber. The MIRIS mechanical structure of the EQM has been modified to develop FM according to the performance and environment test results. The filter-wheel module in the cryostat was newly designed with Finite Element Analysis (FEM) in order to compensate for the vibration stress in the launching conditions. Surface finishing of all components were also modified to implement the thermal model for the passive cooling technique. The FM electronics design has been completed for final fabrication process. Some minor modifications of the electronics boards were made based on EQM test performances. The ground calibration tests of MIRIS FM will be made with the science grade Teledyne PICNIC IR-array.

• 한국세라믹학회지
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• 제41권3호
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• pp.221-228
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• 2004

국내에서는 최근 구조물 증축에 필요한 경량골재를 중국 및 일본 등에서 수입해 사용하고 있는 실정이고, 환경오염에 대한 관심 또한 고조되면서 폐기물의 처리, 처분 문제가 심각하게 대두되고 있다. 이에 순수 국내 기술로 폐기물과 점토질 원료를 습식혼합, 로터리 킬른에서 소성하여 인공경량골재를 제조한 후 기본 물성을 평가하였고 경량콘크리트에 적용하여 강도특성을 고찰하였다. 인공경량골재의 절건비중은 1.4～1.7, 흡수율은 13～16%이었으며, 파쇄율은 약 30～55%로 강자갈이나 쇄석과 비교하여 10% 이상 높은 수치를 나타내었고 파쇄 형상에서도 차이를 보였다. 골재를 2mm 이하로 분쇄하여 TCLP 용출시험 후 추출된 여액을 ICP-AES로 분석한 결과, 검출한계 이하 또는 용출량 기준치 이하로 용출되었다. 제조된 인공경량골재를 사용한 경량콘크리트 공시체를 제작하여 슬럼프, 압축강도, 휨파괴변형 특성을 시험하였다. 시험 결과, 인공골재 치환율 30vo1%, 물시멘트비 45wt%인 공시체에서의 슬럼프 및 압축강도 특성이 가장 우수하였다. 경량골재 콘크리트의 슬럼프 및 압축강도 시험결과를 통해 도출된 최적배합을 바탕으로 경량콘크리트 패널을 제작하여 단열 및 차음특성을 시험한 결과, 평균 열관류율은 3.293W/$m^2$$^{\circ}C$로 쇄석콘크리트에 비해 약 15% 우수하였으며, 음향투과손실은 500Hz에서 50.9㏈로 기준치를 약 13% 상회하는 결과를 보였다.

• Composites Research
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• 제29권3호
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• pp.111-116
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• 2016

터보/컴프레셔(Turbo compressor)용 틸팅 패드 저널 베어링(Tilting pad journal bearing)은 고속, 고하중의 주축(Rotor)을 지지하는 역할을 하며, 화이트 메탈(White metal)이 대표적인 소재로 널리 사용되어왔다. 그러나 예기치 않은 윤활유 공급 중단 상황(Oil cut situation) 또는 베어링과 주축 사이에 유막(Oil film)이 제대로 형성되지 않을 경우, 기존의 화이트 메탈 베어링은 융착(Seizure) 현상에 의해 바로 정지하게 되고 주축에 심각한 손상을 유발한다. 이러한 융착 문제를 해결하기 위해 기존의 화이트 메탈에 비해 높은 비강성, 비강도 그리고 뛰어난 마찰 특성(Tribological characteristic)을 가지는 탄소섬유 강화 복합재료(Carbon fiber reinforced composite)가 틸팅 패드 저널 베어링에 사용될 수 있다. 본 연구에서는 고 내열성 탄소섬유/에폭시 복합재료 틸팅 패드 저널 베어링의 오일공급 중단 상황에서의 내구성에 대한 연구를 진행하였다. 이를 위해 상온 및 오일공급 중단상황의 고온에서 인장, 압축, 전단 등의 기초적인 복합재료 물성 실험을 진행하였고, 복합재료 틸팅 패드 저널 베어링에 있어 가장 중요한 물성인 층간 계면 강도를 측정하기 위해 Short Beam Shear 실험을 진행 하였다. 오일 공급 중단 상황에서 복합재료 틸팅 패드 저널 베어링의 파손(Failure) 가능성을 알아보기 위해 유한 요소 해석(Finite element analysis)을 진행함으로써 베어링 표면에 가해지는 최대 응력을 도출하였고, 해석 결과와 물성 시험으로부터 측정된 강도 값을 이용하여 Tsai-Wu Failure index를 계산하였다. 해석 결과를 검증하기 위해 산업용 테스트 벤치를 이용하여 탄소섬유/에폭시 복합재료로 제조된 틸팅 패드 저널 베어링의 오일 공급 중단 실험을 진행하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• 한국건축시공학회지
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• 제12권2호
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• pp.203-210
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• 2012

최근 국내에서는 대형 및 초고층화 건축물에 대한 관심과 수요가 증가하고 있는 추세와 함께 콘크리트의 성능이 중요시 되고 있다. 이를 뒷받침하는 기술로 매스콘크리트 및 고강도 콘크리트 시공기술의 확보는 대단히 중요하다. 고강도 콘크리트의 경우 다량의 분체량에 따른 시멘트의 수화반응(hydration) 활성으로 콘크리트 내부에 높은 온도의 수화열이 발생하고 외부와 온도차로 인한 열응력의 증가 및 그로인한 균열, 슬럼프 로스현상 등의 문제점들이 많이 발생하고 있어 대책이 필요한 실정이다. 본 연구에서는 매스콘크리트 및 고강도 콘크리트의 수화열을 제어하기 위하여 혼화재의 종류와 혼입량의 변화, 배합수를 Ice-flake로 100% 대체함으로써 고강도 콘크리트의 수화열을 저감하고자 하였으며, 실험결과 콘크리트의 수화열 저감 방안으로 혼화재는 고로슬래그와 플라이 애쉬를 사용하고 배합수로 Ice-flake를 사용함으로써 콘크리트의 유동성개선 및 슬럼프로스 저감효과를 볼 수 있으며, 콘크리트 최고 온도를 크게 떨어트려 매스 콘크리트 및 고강도 콘크리트의 수화열에 의한 균열저감 및 품질향상에 크게 기여할 것으로 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• 한국식품과학회지
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• 제21권6호
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• pp.815-819
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• 1989

밤전분 현탁액(3% 및 4%)의 유동특성을 모세관 점도계로 분석하였을 때 $30-65^{\circ}C$에서 항복응력이 존재하지 않는 딜라탄트유체의 거동을 보였다. 그러나 3% 전분 현탁액은 $70^{\circ}C$에서, 4% 전분현탁\액은 $65^{\circ}C$ 이상에서 의가소성 유체의 거동을 보였다. 밤전분 현탁액의 점조도지수의 활성화에너지는 $50^{\circ}C$이하에서는 0.56kcal/mole, $60-70^{\circ}C$에서는 51.9-80.8 kcal/mole 이었다. 전분 호화액(4%)의 유동특성을 회전점도계로 측정하였을 때 가열온도 및 시간에 관계없이 겉보기 점도는 지수적으로 감소하여 의가소성을 나타내었다. 밤전분 호화액을$65-80^{\circ}C$로 가열했을 때의 겉보기 점도의 대수값은 동일온도에서의 전분의 팽화력과 밀접한 관계를 보였다. 가열온도 $70-80^{\circ}C$에서의 겉보기 점도의 활성화 에너지 값은 13.9kcal/mole이었다. 상압$(90^{\circ}C)$ 및 가압$(121^{\circ}C)$ 호화액은 측정온도의 증가에 따라 겉보기 점도가 감소하였으나, 가압호화액은 측정온도의 증가에 따라 겉보기 점도가 감소하였으나, 가압호화액의 겉보기 점도는 동일온도에서 상압호화액의 겉보기 점도보다 높은 값을 보였다.

• 한국표면공학회지
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• 제46권2호
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• pp.68-74
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• 2013

For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• 한국구조물진단유지관리공학회 논문집
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• 제14권4호
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• pp.141-147
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• 2010

LNG 천연가스로서 저장과 운반이 용이한 액체로 변형이 가능하며, 청정연료로 각광받게 되어, 석유에너지의 의존도를 낮추고 에너지사용의 다변화를 위해 1986년 인도네시아로부터 처음 도입된 이래로 산업의 성장과 더불어 그 수요량이 지속적으로 증가하고 있다. LNG는 천연가스의 부피를 영하 약 $-162^{\circ}C(-260^{\circ}F)$까지 냉각시켜 1/600까지 줄일 수 있으므로, 저장 및 운반에 있어서 매우 효율적이다. 현대의 LNG 저장탱크는 철근 콘크리트 이중벽과 내부 니켈방호벽 및 벽사이의 효율이 높은 단열재로 구성된 완전 방호식이 적용되고 있다. 단열재는 극저온의 온도가 LNG 탱크 외벽으로 전달되는 것을 차단하며, 바닥슬래브, 외벽 및 상부에 설치된다. LNG 저장탱크의 단열재의 배치에 따라 콘크리트 외조에 작용하는 온도분포에 차이가 나므로, 본 연구에서는 기 건설된 완전 방호식 LNG 저장탱크 바닥판 단열재의 배치에 대해 검토하고, 이를 바탕으로 단열시스템 개선 방안을 제안하고자 한다.