• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.7-12
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• 2010

Field-emission characteristics of carbon nanotubes(CNTs), which were grown on conical-type tungsten micro-tips by using an electrophoretic deposition(EPD) method, were examined. The EPD method proved to be convenient to manipulate and arrange CNTs from well dispersed suspensions onto such tip-type substrates. The growth rate of CNTs was proportional to the applied d.c. bias voltage and the process time. It was observed from the Raman study that the EPDproduced CNTs showed better crystal qualities with the Raman intensity ratio( $I_D$/$I_G$) of 0.41-0.42 than the CVD-produced CNTs and their crystal qualities could be further improved by thermal annealing. The electron emitters based on the EPDCNTs showed excellent field emission properties, such as the threshold voltage for electron emission of about 620 V and the maximum emission current of about 345 ${\mu}A$. In addition, the EPD-CNTs exhibited the stable long-term(up to 40 h) emission capability and the emission stability was enhanced by thermal annealing.

• Journal of Electrical Engineering and Technology
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• v.11 no.4
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• pp.848-859
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• 2016

System failures in thermal power plants (TPPs) can lead to serious losses because the equipment is operated under very high pressure and temperature. Therefore, it is indispensable for alarm systems to inform field workers in advance of any abnormal operating conditions in the equipment. In this paper, we propose a clustering-based fault detection method for steam boiler tubes in TPPs. For data clustering, k-means algorithm is employed and the number of clusters are systematically determined by slope statistic. In the clustering-based method, it is assumed that normal data samples are close to the centers of clusters and those of abnormal are far from the centers. After partitioning training samples collected from normal target systems, fault scores (FSs) are assigned to unseen samples according to the distances between the samples and their closest cluster centroids. Alarm signals are generated if the FSs exceed predefined threshold values. The validity of exponentially weighted moving average to reduce false alarms is also investigated. To verify the performance, the proposed method is applied to failure cases due to boiler tube leakage. The experiment results show that the proposed method can detect the abnormal conditions of the target system successfully.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.789-792
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• 2003

pMOSFET having 10 ${\mu}um$ thickness Gd layer has been tested to be used as a slow neutron sensor. The total thermal neutron cross section for the Gd is 47,000 barns and the cross section value drops rapidly with increasing neutron energy. When slow neutrons are incident to the Gd layer, the conversion electrons are emitted by the neutron absorption process. The conversion electrons generate electron-hole pairs in the $SiO_2$ layer of the pMOSFET. The holes are easily trapped in Oxide and act as positive charge centers in the $SiO_2$ layer. Due to the induced positive charges, the threshold turn-on voltage of the pMOSFET is changed. We have found that the voltage change is proportional to the accumulated slow neutron dose, therefore the pMOSFET having a Gd nuclear reaction layer can be used for a slow neutron dosimeter. The Gd-pMOSFET were tested at HANARO neutron beam port and $^{60}CO$ irradiation facility to investigate slow neutron response and gamma response respectively. Also the pMOSFET without Gd layer were tested at same conditions to compare the characteristics to the Gd-pMOSFET. From the result, we have concluded that the Gd-pMOSFET is very sensitive to the slow neutron and can be used as a slow neutron dosimeter. It can also be used in a mixed radiation field by subtracting the voltage change value of a pMOSFET without Gd from the value of the Gd-pMOSFET.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.6
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• pp.24-31
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• 2010

Laser carbonization of a polymer layer can be employed in various applications in the microelectronics industry, e.g repairing brightness pixels of an LCD panel. In this work, the process of thermal degradation of LCD color filter polymer by various laser sources with pulsewidths from CW to fs is studied. LCD pixels are irradiated by the lasers and the threshold irradiance of LCD color filter polymer carbonization is experimentally measured. In the numerical analysis, the transient temperature distribution is calculated and the number density of carbonization in the polymer layer is also estimated. It is shown that all the lasers can carbonize the polymer layers if the output power is adjusted to meet the thermal conditions for polymerization and that pulsed lasers can result in more uniform distribution of temperature and carbonization than the CW laser.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.64-71
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• 2023

In this study, we investigated the effects of BiAlSiO glass composition on its glass forming range, thermal properties, and plasma resistance. The results showed that increasing the Al2O3 content suppressed the tendency for crystallization and hindered glass formation beyond a certain threshold. Bi2O3 was found to increase the content of non-bridging oxygen, resulting in a decrease in glass transition temperature and an increase in thermal expansion coefficient. Furthermore, the etching rate was found to improve with increasing Al2O3 content but decrease with increasing SiO2 content. It was concluded that the boiling point of fluorinated compounds should be considered to 900℃. Therefore, this study is expected to contribute to the understanding of the properties of BiAlSiO glass and its application to low temperature melting PRG compositions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.43-47
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• 2024

The size of semiconductor devices has been scaled down to improve packing density and output performance. However, there is uncontrollable spreading of the dopants that comprise the well, punch-stop, and channel-stop when using high-temperature annealing processes, such as rapid thermal annealing (RTA). In this context, low-temperature deuterium annealing (LTDA) performed at a low temperature of 300℃ is proposed to reduce the thermal budget during CMOS fabrication. The LTDA effectively eliminates the interface trap in the gate dielectric layer, thereby improving the electrical characteristics of devices, such as threshold voltage (V_TH), subthreshold swing (SS), on-state current (I_ON), and off-state current (I_OFF). Moreover, the LTDA is perfectly compatible with CMOS processes.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.156-159
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• 2008

The electrical characteristic of SiGe-on-SOI (SGOI) wafer with different Ge concentration were evaluated by pseudo-MOSFET. Epitaxial SiGe layers was grown directly on top of SOI with Ge concentrations of 16.2, 29.7, 34.3 and 56.5 at.%. As Ge concentration increased, leakage current increased and threshold voltage shifted from 3 V to 7 V in nMOSFET, from -7 V to -6 V in pMOSFET. The interface states between buried oxide and top of Si was significantly increased by the rapid thermal annealing (RTA) process, and so the electrical characteristic of SGOI wafer degraded. On the other hand, additional post RTA　annealing (PRA) showed that it was effective in decreasing the interface states generated by RTA processes and the electrical characteristic of SGOI wafer enhanced higher than initial state.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.154-154
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• 2012

Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.

• The Korean Journal of Physiology
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• v.24 no.2
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• pp.305-317
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• 1990

The present study was performed to investigate modification in the electrophysiological characteristics of cat dorsal horn cells during neurogenic inflammation induced by mustard oil. The results obtained were summarized as follows: 1) Following subcutaneous injection of mustard oil the majority of wide dynamic range (WDR) cells (10/15 units) showed enhanced responses (80%) to brush, while the responses to all types of mechanical stiumli were enhanced in 3/15 units. One cell was further activated by pinch and the another was not affected at all after induction of inflammation. 2) The sensitization of WDR cell was resulted from subcutaneous injection of mustard oil either inside or outside of the receptive field (RF), whereas the spontaneous activity increased only after mustard oil was injected inside of the RF. 3) In the animal with inflammation the responses of high threshold (HT) cell to noxious stimulus were not altered, while HT cell responded to such mechanical stimulus as pressure which was usually ineffective in normal animals. 4) After induction of inflammation, low threshold (LT) cell appeared to be converted to WDR cell, showing responses not only to brush but also to pressure and pinch. 5) The mustard oil-induced inflammation enhanced responses of WDR and HT cells to the thermal stimuli and also resulted in a pronounced after-discharge in WDR cells. 6) After subcutaneous injection of lidocaine, the increased background activity of WDR cells due to inflammation was almost completely abolished. 7) A subcutaneous injection of mustard oil inside of the RF invariably desensitized the dorsal horn cells which receive sensory inputs from the inflamed RF. From the results of Present study it was revealed that a neurogenic inflammation induced by mustard oil resulted in an enhancement of responses of cat dorsal horn cells to mechanical and thermal stimuli.

• Journal of The Korean Society of Agricultural Engineers
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• v.60 no.2
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• pp.75-84
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• 2018

Thermal stress of livestock has been issued due to recent climate change trends and this causes reproductive disorders, decreased feed consumption, immunosuppression, and increased mortality of animals. Concept of THI has been widely used to quantitatively evaluate the degree of thermal stress for animals, however use of this concept is restricted for animals living in the enclosed facilities such as mechanically ventilated broiler houses. In this study, time-based internal energy flow and variation trends of temperature and humidity were analyzed based on BES technique. Local weather data, insulation characteristics of building materials, heat and moisture generation rate from broilers according to age, algorithm of ventilation operation were adopted for boundary condition of the model to accurately compute THI values inside the mechanically ventilated broiler house. From the BES computation, excess frequency of THI threshold in Jeju city was highest on the assumption that air conditioning equipments were not installed. When general raising density ($39kg\;m^{-2}$) was adopted, total 2,191 hours were exceeded. Excess hours of THI threshold were strongly related to the cumulative air temperature ($R^2=0.87$).