• The Bulletin of The Korean Astronomical Society
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• v.35 no.1
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• pp.40.1-40.1
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• 2010

The Main payload of the STSAT-3 (Korea Science & Technology Satellite-3), MIRIS (Multipurpose Infra-Red Imaging System) has been developed for last 3 years by KASI, and its Flight Model (FM) is now being developed as the final stage. All optical lenses and the opto-mechanical components of the FM have been completely fabricated with slight modifications that have been made to some components based on the Engineering Qualification Model (EQM) performances. The components of the telescope have been assembled and the test results show its optical performances are acceptable for required specifications in visual wavelength (@633 nm) at room temperature. The ensuing focal plane integration and focus test will be made soon using the vacuum chamber. The MIRIS mechanical structure of the EQM has been modified to develop FM according to the performance and environment test results. The filter-wheel module in the cryostat was newly designed with Finite Element Analysis (FEM) in order to compensate for the vibration stress in the launching conditions. Surface finishing of all components were also modified to implement the thermal model for the passive cooling technique. The FM electronics design has been completed for final fabrication process. Some minor modifications of the electronics boards were made based on EQM test performances. The ground calibration tests of MIRIS FM will be made with the science grade Teledyne PICNIC IR-array.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.221-228
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• 2004

Basic properties of artificial lightweight aggregate by using waste dusts and strength properties of LWA concrete were studied. Bulk specific gravity and water absorption of artificial lightweight aggregates varied from 1.4 to 1.7 and 13 to 16%, respectively. Crushing ratio of artificial lightweight aggregate was above 10% higher than that of crushed stone or gravel. As a result of TCLP leaching test, the leaching amount of tested heavy metal element was below the leaching standard of hazardous material. Slump, compressive strength and stress-strain properties of LWA concrete made of artificial lightweight aggregate were tested. Concrete samples derived from LWA substitution ratio of 30 vol% and W/C ratio of 45 wt% showed the best properties overall. Thermal insulation and sound insulation characteristics of light weight concrete panel with the optimum concrete proportion were tested. Average overall heat transmission of 3.293W/㎡$^{\circ}C$ was observed. It was higher by about 15% than those of normal concrete made by crushed stone. Sound transmission loss of 50.9 ㏈ in frequency of 500 ㎐ was observed. It was higher by about 13% than standard transmission loss.

• Composites Research
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• v.29 no.3
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• pp.111-116
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• 2016

The tilting pad journal bearing for the turbo compressor application has a role to support high speed and heavy loading rotor. White metal has been widely used for the bearing material but the conventional bearing is immediately suspended and induces serious serious damage to the rotor under the unexpected oil cut situation or the insufficient oil film formation. The carbon fiber reinforced composite having high specific stiffness, specific strength and excellent tribological characteristics can solve these seizure problems. In this work, the study on the durability of high thermal resistance carbon fiber/epoxy composite tilting pad journal bearing under oil cut situation was conducted. The material properties of the composite materials including tensile, compressive and interlaminar properties were measured at room and high temperature of oil cut situation. To investigate the possibility of failure of composite tilting pad journal bearing under oil cut situation, the stress distribution of the composite bearing was analyzed via finite element analysis and the Tsai-Wu Failure index was calculated. To verify the failure analysis results, the oil cut tests for the composite tilting pad journal bearing were conducted using industrial test bench.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.327.1-327.1
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• 2014

Nitrides-on-silicon structures are considered to be an excellent candidate for unique design architectures and creating devices for high-power applications. Therefore, a lot of effort has been concentrating on growing high-quality III-nitrides on Si substrates, mostly Si(111) and Si(001) substrates. However, there are several fundamental problems in the growth of nitride compound semiconductors on silicon. First, the large difference in lattice constants and thermal expansion coefficients will lead to misfit dislocation and stress in the epitaxial films. Second, the growth of polar compounds on a non-polar substrate can lead to antiphase domains or other defective structures. Even though the lattice mismatches are reached to 16.9 % to GaN and 19 % to AlN and a number of dislocations are originated, Si(111) has been selected as the substrate for the epitaxial growth of nitrides because it is always favored due to its three-fold symmetry at the surface, which gives a good rotational matching for the six-fold symmetry of the wurtzite structure of nitrides. Also, Si(001) has been used for the growth of nitrides due to a possible integration of nitride devices with silicon technology despite a four-fold symmetry and a surface reconstruction. Moreover, Si(110), one of surface orientations used in the silicon technology, begins to attract attention as a substrate for the epitaxial growth of nitrides due to an interesting interface structure. In this system, the close lattice match along the [-1100]AlN/[001]Si direction promotes the faster growth along a particular crystal orientation. However, there are insufficient until now on the studies for the growth of nitride compound semiconductors on Si(110) substrate from a microstructural point of view. In this work, the microstructural properties of nitride thin layers grown on Si(110) have been characterized using various TEM techniques. The main purpose of this study was to understand the atomic structure and the strain behavior of III-nitrides grown on Si(110) substrate by molecular beam epitaxy (MBE). Insight gained at the microscopic level regarding how thin layer grows at the interface is essential for the growth of high quality thin films for various applications.

• Journal of the Korea Institute of Building Construction
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• v.12 no.2
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• pp.203-210
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• 2012

Recently, the interest and demand for large-scale buildings and skyscrapers have been on the rise, and the performance of concrete is an area of high priority. Securing 'mass concrete and high strength concrete' is very important as a key construction technology. For high strength concrete, the high heat of hydration takes place inside the concrete because of the vitality of hydration in cement due to the large amount of powder, and leads to problems such as an increase of thermal stress due to the temperature difference with the outside, which results in cracks and slump loss. For this reason, measures to solve these problems are needed. This study aims to reduce the hydration heat of high strength concrete to control the hydration heat of mass concrete and high strength concrete, by replacing the type of admixture, The purpose of this study is to control the hydration heat of high strength concrete and mass concrete. Our idea for this purpose is to apply not only the types and contents of admixture but also incorporation mixing water to ice-flake. As a result of the test, the use of blast furnace slag and fly ash as admixture, and the use of ice-flake as mixing water can improve the liquidity of concrete and reduce slump loss. Significantly dropping the maximum temperature will contribute greatly to reducing cracks due to hydration heat in mass concrete and high strength concrete, and improve quality.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• Korean Journal of Food Science and Technology
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• v.21 no.6
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• pp.815-819
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• 1989

Rheological properties of chestnut starch suspensions (3 and 4%, db) and gelatinized starch (4%, db) were investigated with a capillary and rotational viscometer, respectively. Starch suspensions had no yield stress and showed dilatant flow behavior in the temperature ranges of $30-65^{\circ}C$. However, starch suspension showed pseudoplastic flow behavior at $70^{\circ}C\; and\;above\; 65^{\circ}C$ for 3 and 4% concentration, respectively Flow activation energy below $50^{\circ}C$ was 0.56 kcal/mole but increased to 51.9-80.8 kcal/mole at $60-70^{\circ}C$. The behavior of gelatinized starch (4%) was pseudoplastic regardless of heating temperature $(65-80^{\circ}C)$ and time (15-60 min). The apparent viscosity of the starch remained constant after heating at $80^{\circ}C$ for 45 min. The swelling power and log apparent viscosity showed similar pattern. The activation energy of the apparent viscosity of the geletinized starch at $70-80^{\circ}C$ was 13.09kcal/mole. The apparent viscosity of thermal-gelatinized $(90^{\circ}C)$ starch was lower than that of 15 psi-gelatinized starch.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.68-74
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• 2013

For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• Journal of the Korea institute for structural maintenance and inspection
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• v.14 no.4
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• pp.141-147
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• 2010

Liquefied natural gas(LNG) is natural gas that has been converted temporarily to liquid form for ease of storage and transport it. Natural gas is the worlds cleanest burning fossil fuel and it has emerged as the environmentally preferred fuel of choice. In Korea, the demand of this has been increased since the first import from the Indonesia in 1986. LNG takes up about 1/600th the volume of natural gas in the gaseous state by cooling it to approximately $-162^{\circ}C(-260^{\circ}F)$. The reduction in volume therefore makes it much more cost efficient to transport and store it. Modern LNG storage tanks are typically the full containment type, which is a double-wall construction with reinforced concrete outer wall and a high-nickel steel inner tank, with extremely efficient insulation between the walls. The insulation will be installed to LNG outer tank for the isolation of cryogenic temperature. The insulation will be installed in the base slab, wall and at the roof. According to the insulation's arrangement, the different aspects of temperature transmission is shown around the outer tank. As the result of the thermal & stress analysis, by the installing cellular glass underneath the perlite concrete, the temperature difference is greatly reduced between the ambient temperature and inside of concrete wall, also reducing section force according to temperature load.