• Title/Summary/Keyword: Thermal resistance layer

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In-situ Synchrotron Radiation Photoemission Spectroscopy Study of Property Variation of Ta2O5 Film during the Atomic Layer Deposition

  • Lee, Seung Youb;Jeon, Cheolho;Kim, Seok Hwan;Lee, Jouhahn;Yun, Hyung Joong;Park, Soo Jeong;An, Ki-Seok;Park, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.362-362
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    • 2014
  • Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

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A Study on the Oxidation Behaviors of Power Plant Valve Materials under the Ultra Super Critical Condition (초초 임계 화력 발전소용 밸브 소재의 산화 거동)

  • Lee, J.S.;Cho, T.Y.;Yoon, J.H.;Joo, Y.G.;Song, K.O.;Cho, J.Y.;Kang, J.H.;Lee, S.H.;Uhm, K.W.;Lee, J.W.
    • Journal of the Korean institute of surface engineering
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    • v.42 no.1
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    • pp.26-33
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    • 2009
  • Recently ultra-supercritical steam power plants operate at $1000^{\circ}F$ ($538^{\circ}C$) and 3500 psi (24.1 MPa). Thermal efficiency of power plant will be increased about 2% if steam temperature increases from $1000^{\circ}F$ to $1150^{\circ}F$ ($621^{\circ}C$). In this study valve materials Incoloy901 (IC901) and Inconel718 (IN718) were nitrided to improve the surface hardness and solid lubrication function of the valve materials. The hardness of both IC901 and IN718 increased about two times by ion nitriding. IC901, IN718 and their nitrided specimens were corroded under ultra super-critical condition (USC) of $621^{\circ}C$. and 3600 psi (24.8 MPa) for 2000 hours. Oxidations of both IC901 and IN718 were very small due to the formation of protective oxide layer on the surface. But the corrosion resistance of both nitrided specimens decreased because of the formation of non-protective nitride layer of $Fe_{4}N$, $Fe_{2}N$ and CrN on the surface layer. The hardness of both nitrided IC901 and IN718 at $20{\mu}m$ depth from the surface decreased about 30% and 20% respectively by USC 2000 hours.

Research of Diffusion Bonding of Tungsten/Copper and Their Properties under High Heat Flux

  • Li, Jun;Yang, Jianfeng
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.14-14
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    • 2011
  • W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.

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In-situ Thermally Curable Hyper-branched 10H-butylphenothiazine

  • Jo, Mi-Young;Lim, Youn-Hee;Ahn, Byung-Hyun;Lee, Gun-Dae;Kim, Joo-Hyun
    • Bulletin of the Korean Chemical Society
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    • v.33 no.2
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    • pp.492-498
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    • 2012
  • A hyper branched 10-butylphenothiazine with in-situ thermally curable methacrylate (1,3,5-tris-[$\{$10-Butyl-3-(4-(2-methyl-acryloyloxy)-phenyl)-7-yl-10H-phenothiazine$\}$]-benzene, (tris-PTMA)) was synthesized successfully. From the TGA thermogram of tris-PTMA was thermally stable up to $336^{\circ}C$. In the first heating scan of DSC thermogram, tris-PTMA showed glass transition temperature (Tg) at $140^{\circ}C$ and broad endothermic process in the region of $144-179^{\circ}C$, which is thermally curing temperature. In the second heating process, $T_g$ exhibited at $158.7^{\circ}C$ and endothermic process was not observed. Thermally cured tris-PTMA showed no big change in the UV-visible spectrum after washing with organic solvent such as methylene chloride, chloroform, toluene, indicating that thermally cured film was very good solvent resistance. Thermally cured tris-PTMA was electrochemically stable and the HOMO energy level of tris-PTMA was -5.54 eV. The maximum luminance efficiency of double layer structured polymer light-emitting diode based on in-situ thermally cured tris-PTMA was 0.685 cd/A at 16.0 V, which was higher than that of the device without thermally cured tris-PTMA (0.348 cd/A at 15.0 V).

Mechanical Properties of Porous Reaction Bonded Silicon Carbide (반응소결 탄화규소 다공체의 기계적 특성)

  • Hwang, Sung-Sic;Park, Sang-Whan;Han, Jae-Ho;Han, Kyung-Sop;Kim, Chan-Mook
    • Journal of the Korean Ceramic Society
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    • v.39 no.10
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    • pp.948-954
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    • 2002
  • Porous reaction bonded SiC with high fracture strength was developed using Si melt infiltration method for use of the support layer in high temperature gas filter that is essential to develop the next generation power system such as integrated gasification combined cycle system. The porosity and pore size of porous RBSC developed in this study were in the range of 32∼36% and 37∼90 ${\mu}m$ respectively and the maximum fracture strength of porous RBSC fabricated was 120 MPa. The fracture strength and thermal shock resistance of porous RBSC fabricated by Si melt infiltration were much improved compared to those of commercially available porous clay bonded SiC due to the formation of the strong SiC/Si interface between SiC particles. The characteristics of pore structure of porous RBSC was varied depending on the amounts of residual Si as Well as the size of SiC particle used in green body.

Electrical and Magnetic Properties of Tunneling Device with FePt Magnetic Quantum Dots (FePt 자기 양자점 터널링 소자의 전기적 특성과 자기적 특성 연구)

  • Pak, Sang-Woo;Suh, Joo-Young;Lee, Dong-Uk;Kim, Eun-Kyu
    • Journal of the Korean Vacuum Society
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    • v.20 no.1
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    • pp.57-62
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    • 2011
  • We have studied the electrical and magnetic transport properties of tunneling device with FePt magnetic quantum dots. The FePt nanoparticles with a diameter of 8~15 nm were embedded in a $SiO_2$ layer through thermal annealing process at temperature of $800^{\circ}C$ in $N_2$ gas ambient. The electrical properties of the tunneling device were characterized by current-voltage (I-V) measurements under the perpendicular magnetic fields at various temperatures. The nonlinear I-V curves appeared at 20 K, and then it was explained as a conductance blockade by the electron hopping model and tunneling effect through the quantum dots. It was measured also that the negative magneto-resistance ratio increased about 26.2% as increasing external magnetic field up to 9,000 G without regard for an applied electric voltage.

Fabrication and yield improvement of oxide semiconductor thin film gas sensor array (산화물 반도체 박막 가스센서 어레이의 제조 및 수율 개선)

  • 이규정;류광렬;허창우
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.6 no.2
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    • pp.315-322
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    • 2002
  • A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric-pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.% Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

Electrical and Mechanical Properties of Cu(Mg) Film for ULSI Interconnect (고집적 반도체 배선용 Cu(Mg) 박막의 전기적, 기계적 특성 평가)

  • 안재수;안정욱;주영창;이제훈
    • Journal of the Microelectronics and Packaging Society
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    • v.10 no.3
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    • pp.89-98
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    • 2003
  • The electrical and mechanical properties of sputtered Cu(Mg) films are investigated for highly reliable interconnects. The roughness, adhesion, hardness and resistance to thermal stress of Cu(Mg) film annealed in vacuum at $400^{\circ}C$ for 30min were improved than those of pure Cu film. Moreover, the flat band voltage(V$_{F}$ ) shift in the Capacitance-Voltage(C-V) curve upon bias temperature stressing(BTS) was not observed and leakage currents of Cu(Mg) into $SiO_2$ were three times less than those of pure Cu. Because Mg was easy to react with oxide than Cu and Si after annealing, the Mg Oxide which formed at surface and interface served as a passivation layer as well.

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Laser patterning process for a-Si:H single junction module fabrication (레이저 가공에 의한 비정질 실리콘 박막 태양전지 모듈 제조)

  • Lee, Hae-Seok;Eo, Young-Joo;Lee, Heon-Min;Lee, Don-Hee
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.11a
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    • pp.281-284
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    • 2007
  • Recently, we have developed p-i-n a-Si:H single junction thin film solar cells with RF (13.56MHz) plasma enhanced chemical vapor deposition (PECVD) system, and also successfully fabricated the mini modules ($>300cm^2$), using the laser patterning technique to form an integrated series connection. The efficiency of a mini module was 7.4% ($Area=305cm^2$, Isc=0.25A, Voc=14.74V, FF=62%). To fabricate large area modules, it is important to optimise the integrated series connection, without damaging the cell. We have newly installed the laser patterning equipment that consists of two different lasers, $SHG-YVO_4$ (${\lambda}=0.532{\mu}m$) and YAG (${\lambda}=1.064{\mu}m$). The mini-modules are formed through several scribed lines such as pattern-l (front TCO), pattern-2 (PV layers) and pattern-3 (BR/back contact). However, in the case of pattern-3, a high-energy part of laser shot damaged the textured surface of the front TCO, so that the resistance between the each cells decreases due to an incomplete isolation. In this study, the re-deposition of SnOx from the front TCO, Zn (BR layer) and Al (back contact) on the sidewalls of pattern-3 scribed lines was observed. Moreover, re-crystallization of a-Si:H layers due to thermal damage by laser patterning was evaluated. These cause an increase of a leakage current, result in a low efficiency of module. To optimize a-Si:H single junction thin film modules, a laser beam profile was changed, and its effect on isolation of scribed lines is discussed in this paper.

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Analysis of Lattice constants change for study of W-C-N Diffusion (W-C-N 확산방지막의 격자상수 변화 분석을 통한 특성 연구)

  • Kim, Soo-In;Lee, Chang-Woo
    • Journal of the Korean Vacuum Society
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    • v.17 no.2
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    • pp.109-112
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    • 2008
  • The miniaturization of device size and submicron process causes serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Moreover, the interaction between Cu and Si is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Therefore it is necessary to implement a barrier layer between Cu and Si. So we study W-C-N diffusion barrier for prevent Cu diffusion as a function of $N_2$ gas flow and thermal stability. Especially, we also study the W-C-N diffusion barrier for analyzing the change of lattice constants.