• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1424-1425
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• 2006

A four-step rapid thermal annealing (RTA) process is proposed in order to improve the throughput and stabilize the process, compared to the six-step RTA process. Effects of annealing on the properties of a structure mode of CMOS process in both cases were investigated. The implanted dopant(As, $BF_2$ and Ti/TiN) movement in silicon during different rapid thermal annealing conditions was studied using secondary ion mass spectroscopy (SIMS) technique. These results show that the four-step RTA process significantly improves time effect and throughput (15%) by the condition of ramping up compared to the six-step RTA process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.564-569
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• 2002

Heteroepitaxial GaN films were grown on sapphire substrates in order to study the effects of the buffer layer's surface roughness and thermal treatment on the epitaxial layer's quality. For this, GaN buffer layers were grown at $550^{\circ}C$ with various TMGa flow rates and durations of growth, and annealed at $1010^{\circ}C$ for 3 min after the temperature was raised by 23 ~ $92^{\circ}C/min$, and then GaN epitaxial layers were grown at $1000^{\circ}C$. It has been found that the buffer layer's surface roughness and the thermal treatment condition are critical factors on the quality of the epitaxial layer. When a buffer layer was frown with a TMGa flow rate of $24\mu mole/min$ for 30 sec, the surface roughness of the buffer lather was minimum and when the thermal ramping rate was $30.6^{\circ}C/min$ on this layer, the successively grown epitaxial layer's crystalline and optical qualities were optimized with a specular morphology. The minimum full width at half maximum(FWHM) of GaN(0002) x-ray diffraction peak and that of near-band-edge(NBE) peak from a room temperature photoluminescence (PL) were 5 arcmin and 9 nm, respectively.

• Nuclear Engineering and Technology
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• v.22 no.2
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• pp.116-127
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• 1990

The fission gas release model used In the SPEAR-BETA fuel performance code was modified by use of effective thermal conductivity for cracked fuel and by laking Into account axial fission-gas mixing between the fuel-clad gap and the plenum. With use of this modified model the fission gas release was analyzed under various power ramping conditions of P$_{max}$ and $\Delta$.fP. Effective fuel thermal conductivity that accounts for the effect of fuel tracking was used in calculation of the fuel temperature distribution and the Internal gas pressure under power ramping conditions. Mixing and dilution effects due to axial gas flow were also considered in computing the width and the thermal conductivity of the gap. The effect of axial gas flow w3s solved by the Crank-Nicholson method. The finite difference method was used to save running time in the calculation. The present modified fission-gas release model was validated by comparing its predicted results with experimental data from various lamping tests In the literature and calculated results with use of the models used In the SPEAR-BETA and FEMAXI-IV codes. Results obtained with use of the present modified model showed better agreement with experimental data reported in the literature than those results with use of the latter codes. The fuel centerline temperature calculated with introduction of effective thermal conductivity for centerline temperature calculated with Introduction of effective thermal conductivity for cracked fuel was 200 higher fission gas release predicted with use of the modified model was nearly 6% larger on the average than that calculated by use of the unmodified model used in the SPEAR-BETA code.e SPEAR-BETA code.e.

• Journal of Energy Engineering
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• v.22 no.4
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• pp.327-332
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• 2013

일본 연구에서는 열충격 시험을 통한 태양전지의 파괴모드에 따른 전기적 특성을 분석하였다. 시편은 Photovoltaic Module을 만들기 전 3 line Ribbon을 Tabbing한 단결정 Solar Cell을 제작하였다. 열충격 시험 Test 1의 온도조건은 저온 $-40^{\circ}C$, 고온 $85^{\circ}C$, Test 2는 저온 $-40^{\circ}C$, 고온 $120^{\circ}C$에서 Ramping Time을 포함하여 각각 15분씩, 총 30분을 1사이클로 500사이클을 각각의 조건으로 수행하였다. 열충격 시험 후 Test 1에서는 4.0%의 효율 감소율과 1.5%의 Fill Factor 감소율을 확인하였으며, Test 2에서는 24.5%의 효율 감소율과 11.8%의 Fill Factor 감소율을 확인하였다. EL(Electroluminescence)촬영 및 단면을 분석한 결과, Test 1과 Test 2 시편 모두 Cell 표면 및 내부에서의 Crack이 발견되었다. 하지만, Test 2의 시험이 Test 1보다 가혹한 온도조건의 시험으로 인해 Test 1에서 나타나지 않았던, Cell 파괴를 Test 2에서 확인하였다. 결국, Test 1에서 효율의 직접적인 감소 원인은 Cell 내부에서의 Crack이며, Test 2에서는 Cell 내부에서의 Crack 및 Cell 파괴로 인한 Cell 자체의 성능저하로 효율이 크게 감소한다는 것을 본 실험을 통하여 규명하였다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.10
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• pp.840-846
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• 1991

In case of the rapid thermal process by halogen lamps, an optical pyrometer is generally used to measure the temperature. It is, however, necessary to measure the temperature by the thermocouple when the process temperature is lower than 700$^{\circ}C$ and the correction of the temperature is required. Contact by the PdAg paste is commonly used out but in this case it is impossible to see the effect of surface states of the substrate, which is critical in the rapid thermal process. In this study, real temperature ramping speed of silicon substrates coveredwith various thin films such as SiO$_2$2, Si$_{3}N_{4}$, dopants, and conductive layers (Ti or Co) was investigated by a mechanical contact of the thermocouple. And the results were compared with the case in which the contact was made by the PdAg paste. Effect of process ambient was also studied. It was found that depending on the surface state, overshoot more than 100$^{\circ}C$ could occur. It was also found that in case of the substrate covered with conductive layers, mechanical contact might render the correct temperature.

• Progress in Superconductivity and Cryogenics
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• v.5 no.1
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• pp.92-96
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• 2003

This paper deals with the characteristics of persistent current switch (rCS) system fer applied HTS magnet system. To apply the high-Tc superconductor in superconducting machine such as motror, generator, MAGLEV, MRI, and NMR, the study on high-Tc superconducting persistent current mode must be performed. In this experiment, the PCS system consists otd superconducting magnet, PCS and magnet power supply. The superconducting magnet was fabricated by connecting four double pancake coils (DPCs) in series. The PCS was inductive double pancake coil type and heated up by the SUS 303L tape heater. The optimal length of PCS was calculated and thermal quench state of PCS was simulated by using finite element method(FEM) and compared with experimental results. The optimal energy to normalize the PCS was calculated and introduced. Finally, the persistent current was observed with respect to various ramping up rate and magnitude of charging current.

• Journal of Sensor Science and Technology
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• v.21 no.5
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• pp.385-388
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• 2012

This paper describes the synthesis and characterization of graphene by RTA process. Amorphous 3C-SiC were deposited using APCVD for carbon source and Ni layer were employed for transition layer. Various parameters of the ramping speed, the annealing time and the cooling speed are evaluated for the optimized combination allowed for the reproducible fabrication of graphene using 3C-SiC thin film. For analysis of crystalline Raman spectra was employed. Transferred graphene shows a high IG/ID ratio of 2.73. SEM and TEM images show the optical transparency and 6 carbon network, respectively. Au electrode deposited on the transferred graphene shows linear I-V curve and its resistance is 358 ${\Omega}$.

• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.137-142
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• 2008

The parasitic resistance is studied to silicon/metal contact junction for improving device performance and to lower contact/serial resistance silicide in natural sequence. In this paper constructs the stepwise Ni silicide process for parasitic resistance reduction for silicon/metal contact junction. We have investigated multi-step Ni silicide on SiGe substrate with stepwise annealing method as an alternative to compose more thermally reliable Ni silicide layer. Stepwise annealing for silicide formation is exposed to heating environment with $5^{\circ}C/sec$ for 10 seconds and a dwelling for both 10 and 30 seconds, and ramping-up and the dwelling was repeated until the final annealing temperature of $700\;^{\circ}C$ is achieved. Finally a direct comparison for single step and stepwise annealing process is obtained for 20 nm nickel silicide through stepwise annealing is $5.64\;{\Omega}/square$ at $600\;^{\circ}C$, and it is 42 % lower than that of as nickel sputtered. The proposed stepwise annealing for Ni silicidation can provide the least amount of NiSi at the interface of nickel silicide and silicon, and it provides lower resistance, higher thermal-stability, and superior morphology than other thermal treatment.

• Natural Product Sciences
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• v.20 no.4
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• pp.243-250
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• 2014

A simple GC method with a FID detector was developed in order to determine two main compounds (${\beta}$-sitosterol and lupenone) for Adenophorae Radix. ${\beta}$-Sitosterol and lupenone were analyzed by the gradient thermal ramping method. Nitrogen was used as the carrier gas at 108 kPa. The flow rate of gas was 2.0 mL/min; $2{\mu}L$ of filtered sample was injected at a split ratio of 1 : 80. This method was fully validated with respect to linearity, precision, accuracy and robustness. Further, this GC-FID method was applied successfully in order to quantify two compounds in an Adenophorae Radix extract. The GC analytical method for classification analysis was performed by repeated analysis of 59 reference samples in order to differentiate between Adenophora triphylla var. japonica Hara and 14 Codonopsis lanceolata. The results indicate that the GC-FID method is suitable and reliable for the quality evaluation of Adenophorae Radix.

• Korean journal of applied entomology
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• v.49 no.1
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• pp.37-42
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• 2010

As an environment-friendly phytosanitary measure, CATTS (controlled atmosphere temperature treatment system) has been developed to kill several quarantine insect pests infesting subtropical agricultural commodities. This study tested any possibility to apply CATTS to apples to effectively eliminate the peach fruit moth, Carposina sasakii, which has been regarded as a quarantine insect from the imported countries. When the larvae of C. sasakii were directly exposed to $46^{\circ}C$ (an installed lethal temperature of CATTS), they showed a median lethal time at 14.66 min. Addition of high carbon dioxide to the temperature treatment enhanced the thermal limit susceptibility of C. sasakii to $46^{\circ}C$. CATTS device was constructed to automatically control $CO_2$ concentration and temperature with real-time monitoring both in the chamber and in the fruit. The larvae internally infesting apples were tested using the CATTS device and showed 100% lethality after 60 min exposure to a treatment of $46^{\circ}C$ under 15% $CO_2$ in the chamber. Relatively long exposure may be due to the deviation between the ramping temperature ($0.35^{\circ}C$/min) of the chamber and the ramping temperature (0.12-$0.23^{\circ}C$/min) inside apple fruit, where the tested larvae were located. This study suggests a possibility that CATTS can be applied as a quarantine measure to kill the larvae of C. sasakii locating inside the apples.