• 한국자동차공학회논문집
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• 제16권4호
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• pp.165-172
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• 2008

Urea-SCR, the selective catalytic reduction using urea as reducing agent, has been investigated for about 10 years in detail and today is a well established technique for deNOx of stationary diesel engines. In the case of the SCR-catalyst a non-uniform velocity and $NH_3$ profile will cause an inhomogeneous conversion of the reducing agent $NH_3$, resulting in a local breakthrough of $NH_3$ or increasing NOx emissions. Therefore, this work investigates the effect of flow and $NH_3$ non-uniformities on the deNOx performance and $NH_3$ slip in a Urea-SCR exhaust system. From the results of this study, it is found that flow and $NH_3$ distribution within SCR monolith is strongly related with deNOx performance of SCR catalyst. It is also found that multi-hole injector shows better $NH_3$ uniformity at the face of SCR monolith face than one hole injector.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1010-1013
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• 2001

Zinc oxide(ZnO) films were prepared by ultrasonic spray pyrolysis on indium (In) films deposited by evaporation and subsequently submitted to rapid thermal annealing (RTA). The RTA was processed in air or a vacuum ambient. The crystallographic properties and surface morphologies of the films were characterized before and after the RTA by X-ray diffraction (XRD) and scanning electron microscopy(SEM), respectively. The resistivity variation of the films with RTA temperature and time was measured by the 4-point probe method. Auger electron spectroscopy(AES) was carried out to figure out the distribution of indium atoms in the ZnO films. The resistivity of the ZnO on In(ZnO/In) films decreased to 2${\times}$10$\^$-3/ $\Omega$cm by diffusion of the In. The In diffusion into the ZnO films roughened the surface of the ZnO films. The results of depth profile by AES showed a hump of In atoms around ZnO/In interface after the RTA at 800$^{\circ}C$, which disappeared by the RTA at 1000$^{\circ}C$. The effects of temperature, time and ambient during the RTA on the structural and electrical properties of the ZnO/In films were discussed.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.828-834
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• 2001

Zinc oxide (ZnO) films deposited on indium (In) films were post-annealed in a rapid thermal anealing (RTA) system. The ZnO/In films were RTA-treated in air or a vacuum ambient. The crystallographic properties and surface morphologies of the films were studied before and after the RTA by X-ray diffraction(XRD) and scanning electron microscopy (SEM), respectively. The resistivity variation of the films with RTA temperature and time was measured by the 4-point probe method. Auger electron spectroscopy (AES) was carried out to figure out the redistribution of indium atoms in the ZnO films. The resistivity of the ZnO/In films decreased to 2$\times$10$\^$-3/ Ωcm by diffusion of the In. The In diffusion into the ZnO films roughened the surface of ZnO films. The results of depth profile by AES showed a hump of In atoms around ZnO/In interface after the RTA at 800 $\^{C}$. The effects of temperature time and ambient during the RTA on the structural and electrical properties of the ZnO/In films were discussed.

• 접착 및 계면
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• 제4권2호
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• pp.1-9
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• 2003

Epoxy-amine liquid prepolymers are extensively applied onto metallic substrates and cured to obtain painted materials or bonded joint structures. Overall performances of such systems depend on the created interphase between the organic layer and the substrate. When epoxy-amine liquid mixtures are applied onto more or less hydrated metallic oxide layer, concomitant amine chemical sorption and hydroxide dissolution appear lending to the chelate formation. As soon as the chelate concentration is higher than the solubility product, these species crystallize as sharp needles. Moreover, intrinsic and thermal residual stresses are developed within painted or bonded systems. When residual stresses are higher than the organic layer/substrate adhesion, buckling, blistering, debonding may occur leading to a catastrophic drop of system performances. Practical adhesion can be evaluated with either ultimate parameters (Fmax or Dmax) or the critical strain energy release rate, using the three point flexure test (ISO 14679-1997). We observe that, for the same system, the ultimate load decreases while residual stresses increase when the liquid/solid time increases. Ultimate loads and residual stresses depend on the metallic surface treatment. For these systems, the critical strain energy release rate which takes into account the residual stress profile and the Young's modulus gradient remains quite constant whatever the metallic surface treatment was. These variations will be discussed and correlate to the formation mechanisms of the interphase.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권4호
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• pp.154-160
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• 2005

We have investigated thermal properties showed by changing the content of carbon black which is the component parts of semiconductive shield in underground power transmission cable. Specimens were made of sheet with the nine of those for measurement. Density of specimens was measured by density meter, and then stress-strain of specimens was measured by TENSOMETER 2000. A speed of measurement was 200[mm/min], ranges of stress and strain were 400(Kgf/$cm^2$) and 600[$\%$]. In addition, tests of stress-strain were progressed by aging specimens at air oven. Finally surface profile was shown in order to looking for protrusion of specimens by using smoothness tester. Density was highly measured according to increasing the content of carbon black from this experimental result, and stress was decreased, while strain was increased according to increasing the content of carbon black. And stress-strain were decreased some after aging because of oxidation reaction of chemical defect. Lastly surface of specimens smoothed generally.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.252-252
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• 2008

The microhotplates consisting of a Pt-ased heating element on AlN/poly 3C-SiC layers were fabricated. The microhotplate has a $600{\mu}m{\times}600{\mu}m$ square shaped membrane which made of $1{\mu}m$ thick ploycrystalline 3C-SiC suspended by four legs. 3C-SiC is known for excellent chemical durability, mechanical strength and sustaining of high temperature. The membrane is fabricated by surface micromachining using oxidized Si sacrificial layer. The Pt thin film is used for heating material and resist temperature sensor. The fabrication methodology allows intergration of an array of heating material and resist temperature detector. For reasons of a short response time and a high sensitivity a uniform temperature profile is desired. The dissipation of microhotplate was examined by a IR thermoviewer and the power consumption was measured. Measured and simulated results are compared and analyzed. Thermal characterization of the microhotplates shows that significant reduction in power consumption was achieved using suspended structure.

• 마이크로전자및패키징학회지
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• 제6권3호
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• pp.25-35
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• 1999

저온동시소성 또는 금속상 저온동시소성 기술은 세라믹 다층멀티칩 기술의 하나로 이 기술을 이용한 모듈은 일반 전기 부품, 고주파 및 자동차 전장에 적용되기 시작하였다. 고온동시소성 기술과 비교하여 저온동시소성 기판의 소성은 그 온도가 $1000^{\circ}C$ 이하에서 이루어지므로 전기전도도가 높은 금, 은, 구리 등의 금속을 이용하여 내부 전극을 형성할 수 있다. 금속상 저온 동시소성 기술은 소성 후의 치수안정성 (x-, y- 방향으로 수축률 0.1 % 이하)의 장점으로 모듈 내부에 수동소자를 내장할 수 있으며, 이러한 장점은 전기적 특성의 향상과 신뢰성 증가를 가져온다. 모듈의 열팽창계수 및 유전율은 조성이나 소성조건을 바꾸어 조정이 가능하다. 본 기술해설에서는 저온동시소성 또는 금속상 저온동시소성 기술에 관한 소개와 장점에 대하여 설명하였다.

• International Journal of Fluid Machinery and Systems
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• 제5권2호
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• pp.91-99
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• 2012

The Fighter aircraft transmission system consists of a light weight, High Speed Flexible Coupling (HSFC) known as Power Take-Off shaft (PTO) for connecting Engine gearbox (EGB) with Accessory Gear Box (AGB). The HSFC transmits the power through series of specially contoured metallic annular thin flexible plates whose planes are normal to the torque axis. The HSFC operates at high speed ranging from 10,000 to 18,000 rpm. The HSFC is also catered for accommodating larger lateral and axial misalignment resulting from differential thermal expansion of the aircraft engine and mounting arrangement. The contoured titanium alloy flexible plates are designed with a thin cross sectional profile to accommodate axial and parallel misalignment by the elastic material flexure. This paper investigates the effect of misalignment on the transmission characteristics of the HSFC couplings. A mathematical model for the HSFC coupling with misalignment has been developed for analyzing the torque transmission and force interaction characteristics. An extensive testing has been conducted for validating characteristics of the designed coupling under various misalignment conditions. With this the suitability of the model adapted for the design iteration of HSFC development is validated. This method will reduce the design iteration cycles of HSFC and can be extended for the similar development of flexible couplings.

• 전자공학회논문지D
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• 제35D권6호
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• pp.37-45
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• 1998

본 논문에서는 본 연구진이 개발 중인 INPROS 3차원 반도체 공정 시뮬레이터 시스템에 이온주입된 불순물의 과도 확산(TED, transient enhanced diffusion) 기능을 첨가하여 수행한 계산 결과를 발표한다. 실리콘 내부에 이온주입된 불순물의 재분포를 시뮬레이션하기 위하여, 먼저 몬테카를로 방법으로 이온주입 공정을 수행하였고, 유한요소법을 이용하여 확산 공정을 수행하였다. 저온 열처리 공정에서의 붕소의 과도 확산을 확인하기 위하여, 에피 성장된 붕소 에피층에 비소와 인을 이온 주입시킨 후, 750℃의 저온에서 2시간 동안 열처리 공정을 수행하였다. 3차원 INPROS 시뮬레이터의 결과와 실험적으로 측정한 SIMS 데이터와 그 결과가 일치함을 확인하였다. INPROS의 점결함 의존성 과도 증속 확산 모델과 소자 시뮬레이터인 PISCES를 이용하여 역 단채널 길이 효과(RSCE, reverse short channel effect)를 시뮬레이션하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.162-168
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• 2006

To fabricate nanometer scale InGaAs HEMTs, we have successfully developed various novel nano-patterning techniques, including sidewall-gate process and e-beam resist flowing method. The sidewall-gate process was developed to lessen the final line length, by means of the sequential procedure of dielectric re-deposition and etch-back. The e-beam resist flowing was effective to obtain fine line length, simply by applying thermal excitation to the semiconductor so that the achievable final line could be reduced by the dimension of the laterally migrated e-beam resist profile. Applying these methods to the device fabrication, we were able to succeed in making 30nm $In_{0.7}Ga_{0.3}As$ HEMTs with excellent $f_T$ of 426GHz. Based on nanometer scale InGaAs HEMT technology, several high performance millimeter-wave integrated circuits have been successfully fabricated, including 77GHz MMIC chipsets for automotive radar application.