• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.237.2-237.2
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• 2016

A pure hafnium-carbide (HfC) coating layer was deposited onto carbon/carbon (C.C) composites using a vacuum plasma spray system. By adopting a SiC buffer layer, we successfully integrated C.C composites with a $100-{\mu}m-thick$ protective coating layer of HfC. Compared to the conventional chemical vapor deposition process, the HfC coating process by VPS showed increased growth rate, thickness, and hardness. The growth behavior and morphology of HfC coatings were investigated by FE-SEM, EDX, and XRD. From these results, it was shown that the addition of a SiC intermediate layer provided optimal surface conditions during the VPS procedure to enhance adhesion between C.C and HfC (without delamination). The thermal ablation test results shows that the HfC coating layer perfectly protected inner C.C layer from thermal ablation and oxidation. Consequently, we expect that this ultra-high temperature ceramic coating method, and the subsequent microstructure that it creates, can be widely applied to improve the thermal shock and oxidation resistance of materials under ultra-high temperature environments.

• Journal of the Korean Solar Energy Society
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• v.33 no.4
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• pp.31-38
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• 2013

The chemical composition of the black Cr solar selective coatings electrodeposited were investigated for property analysis by using a XPS(X-ray photoelectron spectroscopy) before and after annealing in air at $300^{\circ}C{\sim}500^{\circ}C$ for 120 hours. Black Cr selective coating exposed by solar radiation for 5 months was compared with annealed sample. In addition, The Cu solar selective coatings were prepared by thermal oxidation method for low temperature application. The samples obtained were characterized by using the optical reflectance measurements by using a spectrometer. Optical properties of oxidized Cu solar coatings were solar absorptance $({\alpha}){\simeq}0.62$ and thermal emittance $({\epsilon}){\simeq}0.41(100^{\circ}C)$. In the as-prepared Cr black selective coating, the surface of the coating was found to have Cr hydroxide and Cr. The Cr hydroxide of the major component was converted to $Cr_2O_3$ or $CrO_3$ form after annealing at $500^{\circ}C$ with the desorption of water molecules. The black Cr selective coating was degraded significantly at temperature of $500^{\circ}C$. The main optical degradation modes of this coating were diffusion of Cu substrate materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.675-678
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• 2004

Ozone is usually generated from oxygen gas using a silent discharge apparatus and its concentration is less then 10 mol%. An ozone condensation system is constructed for metal oxide thin film fabrication. Ozone is condensed by the adsorption method, which is widely used for the growth of oxidation thin films such as superconductor. Highly condensed ozone is analyzed by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is most effective in the highly condensed ozone region and its method is superior to Q-mass analyzer for determining ozone concentration because of the simplicity of the method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.579-582
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• 2003

Ozone is usually generated from oxygen gas using a silent discharge apparatus and its concentration is less then 10 mol%. Ozone is condensed by the adsorption method, which is widely used for the growth of oxidation thin films such as superconductor. Highly condensed ozone is analyzed by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is most effective in the highly condensed ozone region and its method is superior to Q-mass analyzer for determining ozone concentration because of the simplicity of the method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.264-267
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• 2002

An ozone condensation system is evaluated from the viewpoint of an ozone supplier for oxide thin film growth. Ozone is condensed by the adsorption method and its concentration is analyzed by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is found to be available to the concentration evaluation from dilution to highly condensed ozone. The highest ozone concentration condensed by the adsorption method is evaluated to be 97 mol%

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.272-275
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• 2002

An ozone condensation system is evaluated in the viewpoint of an ozone supplier for oxide thin film growth. Ozone is condensed by the adsorption and distillation method. Then their concentrations are analyzed by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is found to be available to the concentration evaluation from dilution to highly condensed ozone. The highest ozone concentration condensed by the adsorption method is evaluated to be 96 mol%. The ozone is supplied for a sufficiently long time to grow oxide thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.143.1-143.1
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• 2016

Ge is a promising candidate to replace Si in MOSFET because of its superior carrier mobility, particular that of the hole. However Ge oxide is thermodynamically unstable. At elevated temperature, GeO is formed at the interface of Ge and GeO2, and its formation increases the interface defect density, degrading its device performance. In search for a method to surmount the problem, we investigated Ge oxidation through an inert capped oxide layer. For this work, we prepared low doped n-type Ge(100) wafer by removing native oxide and depositing a capping layer, and show that GeO2 interface can be successfully grown through the capping layer by thermal oxidation in a furnace. The thickness and quality of thus grown GeO2 interface was examined by ellipsometry, XPS, and AFM, along with I-V and C-V measurements performed at 100K to 300K. We will present the result of our investigation, and provide the discussion on the oxide growth rate, interface state density and electrical characteristics in comparison with other studies using the direct oxidation method.

• Journal of the Korean institute of surface engineering
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• v.32 no.2
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• pp.144-156
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• 1999

Thermal Barrier Coating with Functional Gradient Materials (FGM-TBC) can play an important role to protect the parts from harmful environments in high temperatures such as oxidation, corrosion, and wear and to improve the efficiency of aircraft engine by lowering the surface temperature on turbine blade. FGM-TBC can increase the life spans of product and improve the operating properties. Therfore, in this study the evaluations of mechanical and thermal properties of FGM-TBC such as fatigue, oxidation and wear-resistance at high temperatures have been conducted. The samples of both the TBC with 2, 3, 5 layers (YSZ/NiCrAlY) to be produced by Air Plasma Spray method (APS) and the bulk TBC with 6 layers to be produced by Plasma Assisted Sintering method (PAS) were used. Furthermore, residual stress, bond strength, and thermal conductivity were evaluated. The average thickness of the APS was 500$\mu\textrm{m}$ to 600$\mu\textrm{m}$ and the average thickness of the PAS was 3mm. The hardness number of the top layer of APS was 750 Hv to 810Hv and that of PAS was 950 Hv to 1440Hv. The $ZrO_2$ coating layer of APS was composed of tetragonal structure after spraying as the result of XRD analysis. As shown in the results of the high temperature wear test, the 3 layer coating of APS had the best wear resistance at $800^{\circ}C$ and the 5 layer coating of APS had the best wear resistance at $600^{\circ}C$. But, these coatings had the tendency of the low-temperature softening at $300^{\circ}C$. The main mechanism of wear was the adhesive wear and the friction coefficient of coatings was increased as increasing the test temperatures. A s results of thermal conductivity test, the ${\Delta}T$ of the APS coating was increased as number of layer and the range of thermal conductivity of the PAS was $800^{\circ}C$ to $1000^{\circ}C$.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.44 no.1
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• pp.1-9
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• 2012

In this study, 5 solvent soluble polymers were treated on Hanji. Mechanical properties, morphology and oxidation index with thermal aging were measured on the aged Hanji, dewaxed Hanji and polymer treated Hanji. Synthetic polymers(such as polylactic acid, polybutylene succinate, polystyrene) treated Hanji had higher strength and thermal stability than cellulose derivatives(such as cellulose nitrate and cellulose acetate) treated Hanji. Polymer treated Hanji showed a little bit of color change. The oxidation index of PS treated Hanji did not increase with thermal aging because it did not have a carboxyl group in chemical structure. Finally, polystyrene was found to be the most efficient method for strengthening the dewaxed Hanji. The best aging safety and thermal stability were obtained at the polystyrene 3% solution.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.765-770
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• 2003

We have developed a low-temperature, and low-pressure radical induced oxidation (RIO) technology, so that high-quality ultrathin silicon dioxide layers have been effectively produced with a high reproducibility, and successfully employed to realize high performace SiGe heterostructure complementary MOSFETs (HCMOS) lot the first time. The obtained oxide layer showed comparable leakage and breakdown properties to conventional furnace gate oxides, and no hysteresis was observed during high-frequency capacitance-voltage characterization. Strained SiGe HCMOS transistors with a 2.5 nm-thick gate oxide layer grown by this method exhibited excellent device properties. These suggest that the present technique is particularly suitable for HCMOS devices requiring a fast and high-precision gate oxidation process with a low thermal budget.