• Korean Journal of Materials Research
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• v.15 no.4
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• pp.233-239
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• 2005

In this study, the effects of Pd buffer layer on the oxidation resistance of Pt modified-pack aluminized Inconel 738LC, used for gas turbine, were investigated. Pd was electroplated on Inconel 738LC, and Pt was electroplated on the electroplated Pd surface. Thus, the thickness of electroplated Pt/Pd was $10\;{\mu}m$ and the atomic ratio of Pt : Pd was about 6 : 4. After Pt/Pd electroplating, Inconel 738LC was pack aluminized to form the oxidation resistant layer. To investigate the oxidation resistance of Pt/Pd modified-pack aluminized Inconel 738LC, iso-thermal oxidation and cyclic oxidation were performed. The iso-thermal oxdation and the cyclic oxidation data indicated that the Pt/Pd modified-pack aluminized Inconel 738LC was more oxidation resistant than the Pt modified-pack aluminized Inconel 738LC. It was thought that the difference of thermal expansion coefficient between Inconel 738LC and Pt was lowered by the Pd buffer layer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.560-564
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• 2003

Thick oxide layer was fabricated by anodic reaction and complex oxidation performed by combining low temperature thermal oxidation (50$0^{\circ}C$, 1 hr at $H_2O$/O$_2$) and a RTO (rapid thermal oxidation) process (105$0^{\circ}C$, 1 min). Electrical characteristics of OPSL (oxidized porous silicon layer) were almost the same as those of thermal silicon dioxide prepared at high temperature. The leakage current through the OPSL of 20${\mu}{\textrm}{m}$ thickness was about 100 - 500 ㎀ in the range 0 V to 50 V. The average value of breakdown field was about 3.9 MV/cm. From the XPS analysis, surface and internal oxide films of OPSL prepared by complex process were confirmed completely oxidized and also the role of RTO process was important for the densification of PSL (porous silicon layer) oxidized at low temperature.

• Journal of the Korean GEO-environmental Society
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• v.11 no.6
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• pp.31-37
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• 2010

In this study, optimization of MEK and Toluene removal was conducted by HTO(Hybrid Thermal Oxidation) system. HTO system has a multi-bed reaction plate and the plate consisted of wasted heat regeneration part and catalysis part. VOCs removal by HTO system was estimated by changing inlet flow rates with different valve changing times. Under $350^{\circ}C$ of combustion temperature, VOCs was fully converted and the equivalent conversion was 100%. The thermal oxidation efficiency, related to the amount of injected fuel into HTO system and the valve change time, was revealed at the level of 93.0~96.3%. In case of MEK removal by HTO system, the efficiency was ranged from 91.1 to 97.1%. Also, Toluene removal efficiency(93.2~97.4%) was good and stable with respect to the operating conditions. Considering above results, it was proved that HTO system could be a stable and compact system for VOCs, especially MEK and Toluene with high removal efficiency.

• Korean Journal of Food Science and Technology
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• v.26 no.6
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• pp.655-658
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• 1994

This study was designed to investigate the suitability of oxidation matters and physico-chemical characteristics as a quality evaluation for the extent of rancidity development in fats and oils undergoing thermal oxidation. The results showed that acid value rapidly increased during heating time. Soybean oil, especially revealed a faster increase than palm oil and palm olein. Anisidine value and conjugated diene value also increased. Especially, soybean oil increased more rapidly than palm oil and palm olein. Active oxygen method stability was good in the ranks of palm oil, palm olein and soybean oil. Primary oxidation matter (POM) and secondary oxidation matter (SOM) were surveyed as an evaluation method for the extent of rancidity development in fats and oils. POM and SOM showed a sharp increase during the thermal oxidation period.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.725-726
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• 2009

• Applied Microscopy
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• v.25 no.2
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• pp.73-79
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• 1995

The oxidation of silicon wafers is an essential step in the fabrication of semiconductor devices. It is known to induce degradation of electrical properties and lattice strain of Si substrate from thermal oxidation process due to charged interface and thermal expansion mismatch from thermally grown SiO, film. In this study, convergent beam electron diffraction technique is employed to directly measure the lattice strains in Si(100) and $4^{\circ}$ - off Si(100) substrates with thermally grown oxide layer at $1200^{\circ}C$ for three hours. The ratios of {773}-{973}/{773}-{953} Higher Order Laue Zone lines were used at [012] zone axis orientation. Lattice parameters of the Si substrate as a function of distance from the interface were determined from the computer simulation of diffraction patterns. Correction value for the accelerating voltage was 0.2kV for the kinematic simulation of the [012]. HOLZ patterns. The change in the lattice strain profile before and after removal of oxide films revealed the magnitudes of intrinsic strain and thermal strain components. It was shown that $4^{\circ}$ -off Si(100) had much lower intrinsic strain as surface steps provide effective sinks for the free Si atoms produced during thermal oxidation. Thermal strain in the Si substrate was in compression very close to the interface and high concentration of Si interstitials appeared to modify the thermal expansion coefficient of Si.

• Journal of the Korean Ceramic Society
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• v.55 no.5
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• pp.498-503
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• 2018

Using the thermal ablation method, the oxidation behavior of $SiC_f/SiC$ composites was investigated in air and in the temperature range of $1,300^{\circ}C$ to $2,000^{\circ}C$. At the relatively low temperature of $1,300^{\circ}C$, passive oxidation, which formed amorphous phase, predominantly occurred in the thermal ablation test. When the oxidation temperature increased, SiO (g) and CO (g) were formed by active oxidation and the dense oxide layer changed to a porous one by vaporization of gas phases. In the higher temperature oxidation test, both active oxidation due to $SiO_2$ decomposition on the surface of the oxide layer and active/passive oxidation transition due to interfacial reaction between oxide and base materials such as SiC fiber and matrix phase simultaneously occurred. This was another cause of high temperature degradation of $SiC_f/SiC$ composites.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.12
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• pp.59-64
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• 1991

Thin (25-103$\AA$) SiO$_2$ films are grown using the rapid thermal oxidation processing at temperatures of 105$0^{\circ}C$-115$0^{\circ}C$ for 5-30 sec, in order to investigate the characteristics of ultra thin oxide. For measuring the thickness of oxide TEM, ellipsometry, and C-V method which is taken in the condition of small surface band bending are used and compared. When neglecting the small deviation affected by both interface state and moisture charge effect, those three methods described above give similar results. In order to examine the effect of rapid thermal annealing, part of samples are annealed in N$_2$ ambient. MOS capacitors are fabricated and the characteristics of I-V and C-V are measured. Measurements show that the activation energy of initial thickness of oxide grown during the ramp-up time is of 1.125eV and the activation energy of the oxidation rate is of 0.98eV. As oxidation temperature is increased, dielectric breakdown field E$_{BD}$ is decreased due to the increase of fixed charge density N$_f$ However, E$_{BD}$ is shown to be decreased as increasing the thickness of oxide. The increase of N$_f$ in the early stage of thermal annealing results in the decrease of E$_{BD}$.

• Korean Journal of Metals and Materials
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• v.50 no.7
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• pp.539-544
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• 2012

Thermal shock behavior of TiN-coated SUS 304 substrate was investigated using a laser ablation method. By short surface ablation with a pulse Nd-YAG laser, considerable surface crack and spalling were observed, whereas there were few oxidation phenomena, such as grain growth of TiN crystallites, nucleation and growth of $TiO_2$ crystallites, which were observed from the coatings quenched from $700^{\circ}C$ in a chamber. The oxygen concentration of the ablated coating surface with the pulse laser also had a lower value than that of the quenched coating surface by Auger electron spectroscopy and electron probe micro analysis. These results were attributed to the fact that the properties of the pulse laser method have a very short heating time and so the diffusion time for oxidation was insufficient. Consequently, it was verified that the laser thermal shock test provides a way to evaluate the influence of the thermal shock load reduced oxidation effect.

• Journal of the Korean Society of Combustion
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• v.11 no.3
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• pp.1-7
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• 2006

A reaction mechanism of methane partial oxidation, which consists of thermal and plasma chemistry reaction pathways, has been investigated using with an arc-jet reactor. The reaction zone of the arc-jet reactor is spatially separated into thermal and non-thermal plasma zone. Methane conversion rates, selectivity of $H_2$ and $C_2$ chemicals in each zone are obtained, which reveals clearly different characteristics of reaction pathways depending on the temperature conditions. The conversion rates obtained in thermal plasma zone is higher than those in non-thermal plasma zone. The selectivity, however, obtained in non-thermal plasma zone is significantly higher than those in thermal plasma zone. Further parametric study on $O_2/C$ ratio, arc length and SED shows that the present process is mainly governed by thermal chemistry pathways.