• Corrosion Science and Technology
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• 제13권5호
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• pp.178-185
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• 2014

Alloy 617 is considered as a candidate Ni-based superalloy for the intermediate heat exchanger (IHX) of a very high-temperature gas reactor (VHTR) because of its good creep strength and corrosion resistance at high temperatures. Helium is used as a coolant in a VHTR owing to its high thermal conductivity, inertness, and low neutron absorption. However, helium inevitably includes impurities that create an imbalance in the surface reactivity at the interface of the coolant and the exposed materials. As the Alloy 617 has been exposed to high temperatures at $950^{\circ}C$ in the impure helium environment of a VHTR, the degradation of material is accelerated and mechanical properties decreased. The high-temperature strength, creep, and corrosion properties of the structural material for an IHX are highly important to maintain the integrity in a harsh environment for a 60 year period. Therefore, an alloy superior to alloy 617 should be developed. In this study, the mechanical and high-temperature corrosion properties for Ni-Cr alloys fabricated in the laboratory were evaluated as a function of the grain boundary strengthening and alloying elements. The ductility increased and decreased by increasing the amount of Mo and Cr, respectively. Surface oxide was detached during the corrosion test, when Al was not added to alloy. However the alloy with Al showed improved oxide adhesive property without significant degradation and mechanical property. Aluminum seems to act as an anti-corrosive role in the Ni-based alloy.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.605-610
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• 2006

We have investigated $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ structures for pseudomorphic high electron mobility transistor(pHEMT), which were grown by molecular beam epitaxy(MBE) and consequently annealed by rapid thermal anneal(RTA), using Hall measurement, photoluminescence, and transmission electron microscopy (TEM). According to intensity and full-width at half maximum maintained stable at the same energy level, the quantized energy level in $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ quantum wells was independent of the RTA conditions. However, the Hall mobility was decreased from $6,326cm^2/V.s\;to\;2,790cm^2/V.s\;and\;2,078cm^2/V.s$ after heat treatment respectively at $500^{\circ}C\;and\;600^{\circ}C$. The heat treatment which is indispensable during the fabrication procedure would cause catastrophic degradation in electrical transport properties. TEM observation revealed atomically non-uniform interfaces, but no dislocations were generated or propagated. From theoretical consideration about the mobility changes owing to inter-diffusion, the degraded mobility could be directly correlated to the interface scattering as long as samples were annealed below $600^{\circ}C$ lot 1 min.

• 한국도로학회논문집
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• 제8권1호
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• pp.139-152
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• 2006

Many experimental and numerical approaches have been developed to evaluate paving materials and to predict pavement response and distress. Micromechanical simulation modeling is a technology that can reduce the number of physical tests required in material formulation and design and that can provide more details, e.g., the internal stress and strain state, and energy evolution and dissipation in simulated specimens with realistic microstructural features. A clustered distinct element modeling (DEM) approach was implemented In the two-dimensional particle flow software package (PFC-2D) to study the complex behavior observed in asphalt mixture fracturing. The relationship between continuous and discontinuous material properties was defined based on the potential energy approach. The theoretical relationship was validated with the uniform axial compression and cantilever beam model using two-dimensional plane strain and plane stress models. A bilinear cohesive displacement-softening model was implemented as an intrinsic interface and applied for both homogeneous and heterogeneous fracture modeling in order to simulate behavior in the fracture process zone and to simulate crack propagation. A disk-shaped compact tension test (DC(T)) with heterogeneous microstructure was simulated and compared with the experimental fracture test results to study Mode I fracture. The realistic arbitrary crack propagation including crack deflection, microcracking, crack face sliding, crack branching, and crack tip blunting could be represented in the fracture models. This micromechanical modeling approach represents the early developmental stages towards a 'virtual asphalt laboratory,' where simulations of laboratory tests and eventually field response and distress predictions can be made to enhance our understanding of pavement distress mechanisms, such its thermal fracture, reflective cracking, and fatigue crack growth.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.717-723
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• 2009

Ni/Al ('/' denotes deposition sequence) contacts were deposited on Al-implanted 4H-SiC for ohmic contact formation, and the conduction properties were characterized and compared with those of Ni-only contacts. The thicknesses of the Ni and Al thin film were 30 nm and 300 nm, respectively, and the films were sequentially deposited bye-beam evaporation without vacuum breaking. Rapid thermal anneal (RTA) temperature was varied as follows : $840^{\circ}C$, $890^{\circ}C$, and $940^{\circ}C$. The specific contact resistivity of the Ni contact was about $^{\sim}2\;{\pm}\;10^{-2}\;{\Omega}{\cdot}cm^2$, However, with the addition of Al overlayer, the specific contact resistivity decreased to about $^{\sim}2\;{\pm}\;10^{-4}\;{\Omega}{\cdot}cm^2$, almost irrespective of RTA temperature. X-ray diffraction (XRD) analysis of the Ni contact confirmed the existence of various Ni silicide phases, while the results of Ni/Al contact samples revealed that Al-contaning phases such as $Al_3Ni$, $Al_3Ni_2$, $Al_4Ni_3$, and $Ab_{3.21}Si_{0.47}$ were additionally formed as well as the Ni silicide phases. Energy dispersive spectroscopy (EDS) spectrum showed interfacial reaction zone mainly consisting of Al and Si at the contact interface, and it was also shown that considerable amounts of Si and C have diffused toward the surface. This indicates that contact resistance lowering of the Ni/Al contacts is related with the formation of the formation of interfacial reaction zone containing Al and Si. From these results, possible mechanisms of contact resistance lowering by the addition of Al were discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.99-99
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• 2008

대구경, 고품질 GaN 단결정 기판은 HVPE 방법을 이용하여 제조하였다. 이때 성장 방법은 기판인 $Al_2O_3$ 단결정 기판을 질화처리 하였으며, 이종기판 성장 시 야기되는 격자 불일치와 성장 후 냉각동안에 열팽창 계수의 불일치로 야기되는 휨이나 crack 발생을 제거하기 위하여 step-growth 방법을 사용하였다. 사파이어 위에 성장된 GaN의 기판은 두께가 380um이며, 직경은 3"로 crack 발생은 없었으며, $600^{\circ}C$에서 레이저 분리 방법을 이용하여 사파이어와 분리하였다. 그러나 분리된 기판은 이종기판과의 접촉면에서 고밀도 결함발생으로 인하여 휨이 발생하였으며, 표면을 연마한 후 DCXRD의 FWHM은 107 arcsec, PL을 이용한 결함밀도는 $6.2\times10^6/cm^2$으로 나타났다.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.619-625
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• 1995

Polycrystalline CdTe thin film has been studied for photovoltaic application due to the 1.45 eV band gap energy ideal for solar energy conversion and high absorption coefficient. The formation of low resistance contact to p-CdTe is difficult because of large work function(>5.5eV). Common methods for ohmic contact to p-CdTe are to form a p+ region under the contact by in-diffusion of contact material to reduce the barrier height and modify a p-CdTe surface layer using chemical treatment. In this study, the surface chemical treatment of p CdTe was carried out by H$\_$3/PO$\_$4/+HNO$\_$3/ or K$\_$2/Cr$\_$2/O$\_$7/+H$\_$2/SO$\_$4/ solution to provide a Te-rich surface. And various thin film contact materials such as Cu, Au, and Cu/Au were deposited by E-beam evaporation to form ohmic contact to p-CdTe. After the metallization, post annealing was performed by oven heat treatment at 150.deg. C or by RTA(Rapid Thermal Annealing) at 250-350.deg. C. Surface chemical treatments of p-CdTe thin film improved metal/p-CdTe interface properties and post heat treatment resulted in low contact resistivity to p-CdTe.Of the various contact metal, Cu/Au and Cu show low contact resistance after oven and RTA post-heat treatments, respectively.

• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.486-490
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• 2014

$Al_2O_3$ films on silicon carbide were fabricated by Aerosol deposition with annealing temperature at $800^{\circ}C$ and $1,000^{\circ}C$. The effect of thermal treatment on physical properties of $Al_2O_3$ thin films has been investigated by XRD (X-ray diffraction), AFM (atomic force microscope), SEM (scanning electron microscope), and AES (auger electron spectroscopy). Also electrical properties have been investigated by Keithley 4,200 semiconductor parameter analyzer to explain the interface trapped charge density ($D_{it}$), flatband voltage ($V_{FB}$) and leakage current ($I_o$). $Al_2O_3$ films become crystallized with increasing temperature by calculating full width at half maximum (FWHM) of diffraction peaks, also surface morphology is observed by topography measurement in non-contact mode AFM. $D_{it}$ was $2.26{\times}10^{-12}eV^{-1}.cm^{-2}$ at $800^{\circ}C$ annealed sample, which is the lowest value in all samples. Also the sample annealed at $800^{\circ}C$ has the lowest leakage current of $4.89{\times}10^{-13}A$.

• 마이크로전자및패키징학회지
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• 제29권4호
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• pp.41-47
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• 2022

Ag sintering technologies have received great attention as it was applied to the inverter of Tesla's electric vehicle Model III. Ag sinter bonding technology has advantages in heat dissipation design as well as high-temperature stability due to the intrinsic properties of the material, so it is useful for practical use of SiC and GaN devices. This study was carried out to understand the sinter joining temperature effect on the robust Ag sintered joints in air without pressure within 10 min. Electroplated Ag finished Cu dies (3 mm × 3 mm × 2 mm) and substrates (10 mm × 10 mm × 2 mm) were introduced, respectively, and nano Ag paste was applied as a bonding material. The sinter joining process was performed without pressure in air with the bonding temperature as a variable of 175 ℃, 200 ℃, 225 ℃, and 250 ℃. As results, the bonding temperature of 175 ℃ caused 13.21 MPa of die shear strength, and when the bonding temperature was raised to 200 ℃, the bonding strength increased by 157% to 33.99 MPa. When the bonding temperature was increased to 225 ℃, the bonding strength of 46.54 MPa increased by about 37% compared to that of 200 ℃, and even at a bonding temperature of 250 ℃, the bonding strength exceeded 50 MPa. The bonding strength of Ag sinter joints was directly influenced by changes in the necking thickness and interfacial connection ratio. In addition, developments in the morphologies of the joint interface and porous structure have a significant effect on displacement. This study is systematically discussed on the relationship between processing temperatures and bonding strength of Ag sinter joints.

• Composites Research
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• 제33권5호
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• pp.235-240
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• 2020

본 연구에서는 B₄C tile 삽입 B₄C_p/Al7075 하이브리드 복합재의 내충격성을 향상시키기 위하여 B₄C/Al7075 계면의 제어법을 개발하고 제어된 계면의 특성에 관하여 분석하였다. 이를 위해 B₄C 타일 표면에 B₂O₃, Ni, 그리고 Si을 각각 열산화, 무전해도금, 그리고 플라즈마 용사법을 이용하여 코팅하였다. 이후 코팅된 B₄C 타일을 액상 가압법을 이용하여 B₄C/Al7075 복합재 내부에 삽입하여 B₄C tile 삽입 B₄C_p/Al7075 하이브리드 복합재를 제작하였다. 코팅의 효과를 체계적으로 분석하기 위해 계면에너지, 접합 강도, 그리고 내충격성을 측정하였다. 모든 코팅이 계면에너지, 계면강도, 내충격성을 증가시켰으며 특히 B₂O₃ 코팅 시 내충격성이 86.8% 증가하였다. 본 연구는 차세대 경량 장갑, 방탄소재로 주목받고 있는 B₄C/Al 계열 복합재의 성능을 향상시키는 핵심적인 표면처리법을 개발, 분석한 것에 의의가 있다.

• Composites Research
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• 제27권4호
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• pp.168-173
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• 2014

2개 이상의 에폭시 기지재의 배합비를 이용하여 최적의 에폭시 복합재료를 제조하였다. 이 실험에서 노볼락계 에폭시 및 아이소시아네이트계 에폭시를 기지재로 사용하였다. 그에 따라 화학적 조성의 변화를 이용하여 다양한 실험을 통한 최적의 에폭시 배합비를 유추하였고, 에폭시의 내열성 및 계면을 파악하기 위하여 열중량측정기를 이용하여 유리전이온도의 변화를 파악하였고 정적 접촉각을 측정하였다. 기계적 물성을 파악하기 위하여 에폭시 배합비에 따른 유리섬유/에폭시 복합재료의 인장, 압축, 굴곡강도를 상온에서 및 노화시간에 따라 파악하였다. 에폭시와 유리섬유간 계면을 개념도로 나타냈다. 시험 결과 에폭시 배합비에 따른 적외선 피크 및 유리전이온도 변화를 확인하였다. 서로 다른 에폭시의 배합비가 1:1일 때 기계적물성이 상대적으로 좋은 것을 확인하였다.