• 한국컴퓨터산업학회논문지
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• 제8권1호
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• pp.49-56
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• 2007

빔의 열적효과는 세포조직의 서로 다른 구성성분과 레이저 빔의 서로 다른 파장에서 다른결과를 나타내며 세포조직에서 온도증가는 먼저 응고가 이루어지고, 절단이나 탄화과정이 일어나며 $300^{\circ}$이상에서는 세포조직의 파괴에 의한 증발이 발생하게 된다. $CO_2$ 레이저는 최소한 조직손상으로 이러한 효과를 얻는데 최적이라고 보며 0.1mm의 최소한의 세포조직 깊이에서 일어나는 효과의 근본적인 장점은 생체조직이나 내장기관에 안정적이다. $CO_2$레이저사용에 있어서 단점은 무엇보다도 세포파괴에서 생성되는 입자들의 부품흡착 등으로 결과적으로 레이저의 출력감소가 일어나는데, 영 전압, 영 전류 스위칭 포워드 컨버터를 도입하여 기존의 하드 스위칭 포워드 컨버터에 있어서 Turn-off, on시 발생되는 스위칭 방식을, 적용함으로써 1차 측 스위칭 소자의 Turn-off, on시 영전압, 영전류 스위칭을 이루어 정밀도가 요구되는 산부인과용 $CO_2$ 연속 형 레이저의 고압출력 모듈에 따른 펄스 트랜스의 안정화에 필수적으로 기여하며, 레이저 출력과 안정화가 되도록 설계 및 제작한 결과, 기존제품보다 향상된 결과를 가져왔다. 추후 시스템적으로 보완을 하면 우수한 결과가 될 것으로 사려된다.

• 한국세라믹학회지
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• 제40권6호
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• pp.560-565
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• 2003

방전 플라즈마 소결법(SPS: Spark Plasma Sintering)을 이용하여 800~100$0^{\circ}C$의 낮은 소결 온도에서 완전 치밀화를 이루는 M-doped ZnO를 (M=Al, Ni) 제조하여 그 소결 특성과 미세구조를 분석하였다. 전자현미경 분석 결과, NiO의 첨가는 ZnO 결정격자와의 고용체 형성을 촉진시키고 결정립 성장을 유발하였고, A1$_2$O$_3$는 순수한 ZnO 소결 시 나타나는 입계에서의 증발현상을 제어하고, 이차상 형성을 통하여 결정립 성장을 억제함을 확인할 수 있었다 NiO와 $Al_2$O$_3$를 동시에 첨가한 시편이 가장 우수한 미세구조가 형성됨을 확인하였고, SEM-EBSP (Electron Back-scattered Diffraction Pattern) 분석 결과 또한 우수한 결정립계 분포를 가지고 있음을 확인하였다. 이러한, 소결체의 우수한 미세구조적 특징은 carrier 농도 증가에 따른 전기 전도도와 증가 및 phonon scattering 효과에 의한 열전도도의 감소 효과를 유발하여 ZnO의 열전 특성을 향상시키리라 사료된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.316-316
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• 2010

Thin films spin-coated from solvent solutions are characterized by solution parameters and spin-coating process. In this study, performance characteristics of polymer solar cells were investigated with changing solution parameters such as solvent and additives. The phase-separation between polymer and fullerene is needed to make the percolation pathway for better transportation of hole and electron in polymer solar cells. For this reason, cooperative effects of solvent mixtures adding additives with distinct solubility have been studied recently. In this study, chlorobezene, 1, 2-dichlorbenzene, and chloroform were used as solvent. 1, 8-diiodoctaned and 1, 8-octanedithiol were used as additives and were added into poly(3-hexylthiophene-2, 5-diyl)/[6, 6]-phenyl C61 butyric acid methyl ester (P3HT/PCBM) blends. Pre-patterned ITO glass was cleaned using ultrasonication in mixed solvent with ethyl alcohol, isopropyl alcohol and acetone. PEDOT:PSS was spin-coated on to the ITO substrate at 3000rpm and was baked at $120^{\circ}C$ for 10min on the hotplate. The prepared solution was spin-coated at 1000rpm and the spin-coated thin film was dried in the Petri dishes. Al electrode was deposited on the thin film by thermal evaporation. The devices were annealed at $120^{\circ}C$ for 30min. By adding 2.5 volume percent of additives into the chlorobenzene from that bulk heterojunction films consisting of P3HT/PCBM, the power efficiency (AM 1.5G conditions) was increased from 2.16% to 2.69% and 3.12% respectively. We have investigated the effect of additives in P3HT/PCBM blends and the film characteristics and the film characteristics including J-V characteristics, absorption, photoluminescence, X-ray diffraction, and atomic force microscopy to mainly depict the morphology control by doping additives.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.73-76
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• 2010

The copper indium disulfide ($CuInS_2$) thin film was manufactured using sputtering and thermal evaporation methods, and the annealing with sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate, the annealing temperature and the composition ratio, and the characteristics thereof were investigated. The $CuInS_2$ thin film was manufactured by the sulfurization of a soda lime glass (SLG) Cu/In/S stacked [1] elemental layer deposited on a glass substrate by vacuum chamber annealing [2] with sulfurization for various times at a temperature of substrate temperature of $200^{\circ}C$. The structure and electrical properties of the film was measured in order to determine the optimum conditions for the growth of $CuInS_2$ ternary compound semiconductor $CuInS_2$ thin films with a non-stoichiometric composition. The physical properties of the thin film were investigated under various fabrication conditions [3,4], including the substrate temperature, annealing temperature and annealing time by X-ray diffraction (XRD), field Emission scanning electron microscope (FE-SEM), and Hall measurement systems. [5] The sputtering rate depending upon the DC/RF power was controlled so that the composition ratio of Cu versus In might be around 1:1, and the substrate temperature affecting the quality of the film was varied in the range of room temperature (RT) to $300^{\circ}C$ at intervals of $100^{\circ}C$, and the annealing temperature of the thin film was varied RT to $550^{\circ}C$ in intervals of $100^{\circ}C$.

• 한국재료학회지
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• 제30권1호
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• pp.1-7
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• 2020

Doping or incorporation with exotic elements are two manners to regulate the optoelectronic properties of transparent conducting (TCO) cadmium oxide (CdO). Nevertheless, the method of doping host CdO by CdTe semiconductor is of high importance. The structural, optical, and electrical properties of CdTe-doped CdO films are studied for the sake of promoting their conducting parameters (CPs), including their conductivity, carrier concentration, and carrier mobility, along with transparency in the NIR spectral region; these are then compared with the influence of doping the host CdO by pure Te ions. X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and electrical measurements are used to characterise the deposited films prepared by thermal evaporation. Numerous results are presented and discussed in this work; among these results, the optical properties are studied through a merging of concurrent BGN (redshift) and BGW (blue shift) effects as a consequence of doping processes. The impact of hydrogenation on the characterisations of the prepared films is investigated; it has no qualitative effect on the crystalline structure. However, it is found that TCO-CPs are improved by the process of CdTe doping followed by hydrogenation. The utmost TCO-CP improvements are found with host CdO film including ~ 1 %Te, in which the resistivity decreases by ~ 750 %, carrier concentration increases by 355 %, and mobility increases by ~ 90 % due to the increase of N_carr. The improvement of TCO-CPs by hydrogenation is attributed to the creation of O-vacancies because of H₂ molecule dissociation in the presence of Te ions. These results reflect the potential of using semiconductor CdTe -doped CdO thin films in TCO applications. Nevertheless, improvements of the host CdO CPs with CdTe dopant are of a lesser degree compared with the case of doping the host CdO with pure Te ions.

• 한국재료학회지
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• 제20권8호
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• pp.434-438
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• 2010

The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 추계학술발표회 초록집
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2004년도 제23회 추계학술대회 논문집
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• pp.267-273
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• 2004

본 논문에서는 강한 압력파동에 구속된 액체 추진제 연소응답의 지배인자를 규명하고 비정상 거동 특성을 평가한다. 외부 압력섭동에 의해 교란된 탄화수소 계열 액체 추진제의 비정상 거동을 수치계산하고 연소응답의 관점에서 분석한다. 2상 사이의 평형을 고려한 1차원 액적기화 모델을 적용하고 압력파동은 인위적인 조화함수식으로 설정한다 외부 기상의 압력과 온도, 액적의 초기 직경과 내부온도, 외부 압력파동의 진폭과 구동 주파수 등 액체 로켓의 주요 설계인자 및 작동변수의 영향을 고찰한다. 본 연구를 통해 외부 압력파동의 구동 주파수와 외부 기상압력은 연소응답의 크기와 위상을 결정하는 지배인자임이 규명된 반면 외부 기상온도, 액적의 초기 직경과 외부온도 및 압력파동의 진폭 등은 연소응답과 약한 상관관계를 갖거나 그 영향이 미미하다. 기화열 섭동의 위상 및 액적표면과 내부의 파동에너지 전파특성이 연소응답의 크기와 위상을 결정한다.

• 한국식품과학회지
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• 제51권1호
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• pp.7-11
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• 2019

비가열 방식의 역삼투압법으로 제조한 양파농축액의 휘발성 성분 변화를 알아보기 위하여 양파착즙액과 역삼투압 양파농축액을 SAFE로 휘발성 성분을 추출하였고, 이를 GC-MS로 분석하였다. 양파착즙액과 양파농축액에서 각각 48종과 62종의 휘발성성분을 동정하였다, 휘발성 성분 중 sulfur-containing compounds를 19종 검출하였고. 양파의 특징적인 향기성분으로 알려진 11종은 약 1.7-1,664배로 증가하였으며, 또한 양파착즙액에서 검출되지 않았던 휘발성 성분이 양파농축액에서 14종이 검출되었다. 이는 역삼투압법을 이용한 양파 농축액이 향미성분의 변성이 적어, 양파 고유의 향미를 갖는 농축액 제조에 응용할 수 있으며, 미량의 휘발성 성분을 분석하는 전처리 방법으로 바람직한 영향을 줄 것으로 생각한다.

• 한국세라믹학회지
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• 제39권9호
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• pp.896-901
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• 2002

FHD(Flame Hydrolysis Deposition)공정은 화염 형성에 관여하는 장비의 조건들과 그에 따른 다양한 공정인자에 의하여 박막의 조성이 결정되며, 증착된 막을 치밀화하는 첨가물의 증발로 인해 열처리공정에서 조성이 변화되므로 공정인자로부터 최종적인 광도파막의 조성을 예측하는 것은 매우 어렵다. 본 연구에서는 FHD 공정에서 첨가가스의 유량을 제어하여 박막의 조성 및 광학적 특성을 예측할 수 있는 공정 분석의 기초자료를 제공하기 위하여 FTIR(Fourier Transformation Infrared Spectroscopy)측정과 ICP-AES(Inductively Coupled Plasma-Atomic Emission Spectrometry)측정을 통해 실리카 막의 조성분석에 대한 연구를 수행하였다. FTIR 흡수 스펙트럼을 통해 실리카 막에 존재하는 Si-O, B-O band를 측정하고 정성적 농도변화를 관찰 하였고, ICP-AES를 통해 Boron의 농도를 정량적으로 측정하였다. 이 두 결과로부터 FTIR을 이용한 정량적 조성분석의 기초자료인 B-O band의 흡광계수를 구하였다.