• 제목/요약/키워드: Thermal evaporation process

검색결과 179건 처리시간 0.022초

전자빔 증착법으로 이축배향된 Ni-3%W 기판 위에 높은 증착률로 제조된 $CeO_2$ 완충층에 대한 연구 (A study on $CeO_2$ buffer layer on biaxially textured Ni-3%W substrate deposited by electron beam evaporation with high deposition rate)

  • 김혜진;이종범;김병주;홍석관;이현준;권병국;이희균;홍계원
    • 한국초전도ㆍ저온공학회논문지
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    • 제13권1호
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    • pp.1-5
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    • 2011
  • [ $CeO_2$ ]has been widely used for single buffer layer of coated conductor because of superior chemical and structural compatibility with $ReBa_2Cu_3O_{7-{\delta}}$(Re=Y, Nd, Sm, Gd, Dy, Ho, etc.). But, the surface of $CeO_2$ layer showed cracks because of the large difference in thermal expansion coefficient between metal substrate and deposited $CeO_2$ layer, when thickness of $CeO_2$ layer exceeds 100 nm on the biaxially textured Ni-3%W substrate. The deposition rate has been limited to be less than 6 $\AA$/sec in order to get a good epitaxy. In this research, we deposited $CeO_2$ single buffer layers on biaxially textured Ni-3%W substrate with 2-step process such as thin nucleation layer(>10 nm) with low deposition rate(3 $\AA$/sec) and thick homo epitaxial layer(>240 nm) with high deposition rate(30 $\AA$/sec). Effect of deposition temperature on degree of texture development was tested. Thick homo epitaxial $CeO_2$ layer with good texture without crack was obtained at $600^{\circ}C$, which has ${\Delta}{\phi}$ value of $6.2^{\circ}$, ${\Delta}{\omega}$ value of $4.3^{\circ}$ and average surface roughness(Ra) of 7.2 nm within $10{\mu}m{\times}10{\mu}m$ area. This result shows the possibility of preparing advanced Ni substrate with simplified architecture of single $CeO_2$ layer for low cost coated conductor.

태양열 집열기용 열파이프의 구조와 작동 특성에 관한 연구 (A Study on Design and Performance of a Heat pipe for the Application to Solar Collector)

  • 임광빈;김철주
    • 에너지공학
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    • 제2권2호
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    • pp.179-186
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    • 1993
  • 평판형 태양열 집열기에 적용되는 열파이프는 증발부에 상대적인 낮은 열유속으로 길이가 길고 가느다란 형상을 갖는다. 이러한 열파이프는 증발부의 하단부에서 액체 Pool이 형성하는 경향이 있다. 그리고 이 Pool에서 과열, 급속한 기포의 생성, 기포의 폭발적인 성장과정과 Flooding 등의 복잡한 증발과 유체 역학적 현상이 발생한다. 본 논문에서는 4개의 열파이프와 3개의 열사이폰을 이용하여 주 설계변수인 작동유체의 충전량과 위크의 설치 영역을 조절함으로써 이러한 문제를 해결하도록 하였다. 이에 대한 결과들은 다음과 같이 요약할 수 있다$^{1)}$ . 열파이프의 유효 열전도도는 단열부와 응축부에 위크를 제거함으로써 상당히 개선할 수 있었다$^{2)}$ .액체의 충전량은 위크를 적실수 있는 양보다 약 40%정도 증가시켜야 한다$_{3)}$ . 증발부에서 위크는 핵비 등의 단속적 발생에 의한 불안정한 작동과 포기 시동과정에서 응답시간을 줄이는데 유용한 효과를 갖는다.

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Modeling of surface roughness in electro-discharge machining using artificial neural networks

  • Cavaleri, Liborio;Chatzarakis, George E.;Trapani, Fabio Di;Douvika, Maria G.;Roinos, Konstantinos;Vaxevanidis, Nikolaos M.;Asteris, Panagiotis G.
    • Advances in materials Research
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    • 제6권2호
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    • pp.169-184
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    • 2017
  • Electro-Discharge machining (EDM) is a thermal process comprising a complex metal removal mechanism. This method works by forming of a plasma channel between the tool and the workpiece electrodes leading to the melting and evaporation of the material to be removed. EDM is considered especially suitable for machining complex contours with high accuracy, as well as for materials that are not amenable to conventional removal methods. However, several phenomena can arise and adversely affect the surface integrity of EDMed workpieces. These have to be taken into account and studied in order to optimize the process. Recently, artificial neural networks (ANN) have emerged as a novel modeling technique that can provide reliable results and readily, be integrated into several technological areas. In this paper, we use an ANN, namely, the multi-layer perceptron and the back propagation network (BPNN) to predict the mean surface roughness of electro-discharge machined surfaces. The comparison of the derived results with experimental findings demonstrates the promising potential of using back propagation neural networks (BPNNs) for getting a reliable and robust approximation of the Surface Roughness of Electro-discharge Machined Components.

터널링 박막 두께 변화에 따른 부동 게이트 유기 메모리 소자 (Floating Gate Organic Memory Device with Tunneling Layer's Thickness)

  • 김희성;이붕주;신백균
    • 한국진공학회지
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    • 제21권6호
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    • pp.354-361
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    • 2012
  • 유기 메모리 절연막 제작을 위해 일반적으로 사용되어지는 습식법이 아닌 건식법 중 플라즈마 중합법을 이용하였다. 유기 절연 박막으로 사용된 단량체는 Styrene과 MMA을 사용하고, 터널링 박막은 MMA를 사용하며, 메모리 박막은 열기상증착법을 이용한 Au 박막을 사용하였다. 최적화된 소자의 구조는 Au의 메모리층의 두께를 7 nm, Styrene 게이트 절연막의 두께를 400 nm, MMA 터널링 박막의 두께를 30 nm로 증착하여 제작된 부동 게이트형 유기 메모리 소자는 40/-40 V의 double sweep시 27 V의 히스테리시스 전압을 얻을 수 있었다. 이 특성을 기준하여 유기 메모리의 전하 포집 특성을 얻을 수 있었다. 유기 재료 중 MMA 대비 Styrene의 전하 포집 특성이 좋은 것으로 보아 향후 부동 게이트인 Au 박막을 유기 재료인 Styrene으로 대체하여 플렉시블 소자의 가능성을 기대한다.

Fabrication of Hot Electron Based Photovoltaic Systems using Metal-semiconductor Schottky Diode

  • Lee, Young-Keun;Jung, Chan-Ho;Park, Jong-Hyurk;Park, Jeong-Young
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.305-305
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    • 2010
  • It is known that a pulse of electrons of high kinetic energy (1-3 eV) in metals can be generated with the deposition of external energy to the surface such as in the absorption of light or in exothermic chemical processes. These energetic electrons are not in thermal equilibrium with the metal atoms and are called "hot electrons" The concept of photon energy conversion to hot electron flow was suggested by Eric McFarland and Tang who directly measured the photocurrent on gold thin film of metal-semiconductor ($TiO_2$) Schottky diodes [1]. In order to utilize this scheme, we have fabricated metal-semiconductor Schottky diodes that are made of Pt or Au as a metallic layer, Si or $TiO_2$ as a semiconducting substrate. The Pt/$TiO_2$ and Pt/Si Schottky diodes are made by PECVD (Plasma Enhanced Chemical Vapor Deposition) for $SiO_2$, magnetron sputtering process for $TiO_2$, e-beam evaporation for metallic layers. Metal shadow mask is made for device alignment in device fabrication process. We measured photocurrent on Pt/n-Si diodes under AM1.5G. The incident photon to current conversion efficiency (IPCE) at different wavelengths was measured on the diodes. We also show that the steady-state flow of hot electrons generated from photon absorption can be directly probed with $Pt/TiO_2$ Schottky diodes [2]. We will discuss possible approaches to improve the efficiency of photon energy conversion.

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Fabrication and performance evaluation of ultraviolet photodetector based on organic /inorganic heterojunction

  • Abdel-Khalek, H.;El-Samahi, M.I.;Salam, Mohamed Abd-El;El-Mahalawy, Ahmed M.
    • Current Applied Physics
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    • 제18권12호
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    • pp.1496-1506
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    • 2018
  • Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I-V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity $65mW/cm^2$. The diode parameters such as ideality factor, n, barrier height, ${\Phi}_B$, and reverse saturation current, $I_s$, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about $0.33K{\Omega}$ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and $4.6{\times}10^9$ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at -3.5 V under UV illumination.

터빈블레이드 형상 mock-up의 기하학적 배치조건에 따른 전자빔 물리기상증착법으로 제조된 7 wt% YSZ 열차폐 코팅의 코팅 균일성 (Deposition uniformity of 7 wt% YSZ as a thermal barrier coating with different configurational arrangement for turbine blade shape mock-up by electron beam physical vapor deposition)

  • 오윤석;채정민;류호림;한윤수;안종기;손명숙;김홍규
    • 한국결정성장학회지
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    • 제29권6호
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    • pp.308-316
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    • 2019
  • 전자빔 물리기상증착기술(EBPVD)은 주상형 성장거동과 같이 고온에서의 구조 안정성에 기여할 수 있는 특성으로 인해 터빈블레이드 등과 같은 항공기 엔진 고온부품의 열차폐 코팅(TBC) 제조기술로 개발되어 상용화된 기술이다. 전자빔 증착으로 열·기계적 특성이 상용화 가능한 수준에 만족하는 고품질 열차폐 코팅제조를 위해서는 성장거동, 균일두께형성 등과 같은 구조적 요소의 제어가 반드시 수반되어야 한다. 본 연구에서는 실품형상에 근사한 터빈 블레이드 mock-up에 대한 기하학적 코팅인자 조건에 따른 7YSZ(7 wt% 이트리아 안정화 지르코니아) 열차폐 코팅의 성장거동과 구조변화를 고찰하였으며, 전산모사 기법을 활용한 기하학적 코팅인자 조건에 따른 코팅성장거동 모델링을 수행하여 실제 코팅결과와 비교하였다.

화력발전소용 석탄분진의 최소폭발농도와 폭발강도 평가 (An Evaluation of Minimum Explosible Concentration and Explosion Severity of Coal Dust in a Thermal Power Plant)

  • 윤여송;이근원
    • 한국가스학회지
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    • 제27권4호
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    • pp.62-69
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    • 2023
  • 화력발전소용 석탄에 대한 연소기술의 발전과 원가절감을 위해 저급탄의 사용량이 지속적으로 증가하고 있다. 연소 시 수분에 의한 증발잠열 손실이 크고 탄을 저장하고 미분화하는 과정에서 자연발화와 분진의 폭발위험이 있다. 본 연구는 국내 D 발전사에서 채취한 석탄분진(coal powder)으로 Coal dust-fine, Coal dust-coarse, Wood pallet+organic dust 및 Wood chip 4종에 대한 최소폭발농도와 폭발강도를 비교 평가하였다. 석탄 분진의 최소폭발농도는 JIS Z 8818:2002에 따라 측정하였으며, 폭발강도는 Siwek 20 L Chamber Apparatus를 이용하여 ASTM E1226에 따라 실험을 실시하였다. 최소폭발농도 시험결과 coal dust-fine가 분진폭발 위험이 있는 것으로 나타났으며, wood chip의 분진농도 130 g/m3에서 폭발이 일어나므로 가장 낮은 분진농도에서 폭발의 위험이 있는 것을 알 수 있었다. 분진폭발 등급 기준에 따르면 Kst가 200 bar m/s 이하로 모든 시료가 폭발등급 St 1등급에 해당되며, 폭발의 위험성이 약한 분진으로 평가되었다.

$BrO_2/a-Se$ 구조의 방사선 변환센서에서 a-Se에 첨가된 조성비 변화에 따른 I-V 특성 비교 (Comparison of the I-V Characteristic as Various Composition ratio of Iodine in a-Se of $BrO_2/a-Se$ based Radiation Conversion Sensor)

  • 최장용;박지군;공현기;안상호;남상희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.440-443
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    • 2002
  • Present1y the X-Ray diagnosis system is a real condition that is changing by digital ways in it's existent analog ways. This digital radiation detector is divided by the direct method and the indirect method. The indirect method of applied voltage has special qualities that the resolution is low than direct method by diffusion effect that happens. The conversion process ( radiation${\rightarrow}$visible ray${\rightarrow}$electrical signal of two times, has shortcomings that the energy conversion efficiency of electrical signal is low. The direct method has shortcomings that need strong electric fie1d to detect electrical signal efficiently. This research achieved to develop digital detector of the Hybrid method that have form that mixes two ways to supplement shortcoming of direct. indirect method. A studied electrical characteristic by Iodine's Mixture ratio change is added to selenium in the detector which has a multi-layer structure (Oxybromide + a-Se). There are 8 kinds of Manufactured compositions to amorphous selenium Iodine each 30ppm, 100ppm, 200 ppm, 300ppm, 400ppm, 500ppm, 600ppm, 700ppm by a doped photoconductor through a vacuum thermal evaporation method. The phosphor layer is consisted of Oxybromide ($BrO_2$) which uses optical adhesives multi-layer structure. The manufactured compositions calculates and compares Net Charge and signal to noise ratio measuring Photocurrent about Darkcurrent and X-ray. When doped Iodine Mixture ratio is 500ppm to the multi-layer structure (Oxybromide + a-Se), applied voltage of $3V/{\mu}m$, leakage current of compositions $2.61nA/cm^2$ and net charge value by 764pC/$cm^2$/mR then the best result appeared.

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Enhanced Gas Sensing Properties of Bi2O3-Core/In2O3-Shell Nanorod Gas Sensors

  • Park, Sung-Hoon;An, So-Yeon;Ko, Hyun-Sung;Jin, Chang-Hyun;Lee, Chong-Mu
    • Bulletin of the Korean Chemical Society
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    • 제33권10호
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    • pp.3368-3372
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    • 2012
  • The $Bi_2O_3$ nanowires are highly sensitive to low concentrations of $NO_2$ in ambient air and are almost insensitive to most other common gases. However, it still remains a challenge to enhance their sensing performance and detection limit. This study examined the influence of the encapsulation of ${\beta}-Bi_2O_3$ nanorods with $In_2O_3$ on the $NO_2$ gas sensing properties. ${\beta}-Bi_2O_3-core/In_2O_3-shell$ nanorods were fabricated by a two-step process comprising the thermal evaporation of $Bi_2O_3$ powders and sputter-deposition of $In_2O_3$. Multiple networked ${\beta}-Bi_2O_3-core/In_2O_3-shell$ nanorod sensors showed the responses of 12-156% at 1-5 ppm $NO_2$ at $300^{\circ}C$. These response values were 1.3-2.7 times larger than those of bare ${\beta}-Bi_2O_3$ nanorod sensors at 1-5 ppm $NO_2$. The enhancement in the response of ${\beta}-Bi_2O_3$ nanorods to $NO_2$ gas by the encapsulation by $In_2O_3$ can be accounted for based on the space-charge model.