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http://dx.doi.org/10.5012/bkcs.2012.33.10.3368

Enhanced Gas Sensing Properties of Bi2O3-Core/In2O3-Shell Nanorod Gas Sensors  

Park, Sung-Hoon (Department of Materials Science and Engineering, Inha University)
An, So-Yeon (Department of Materials Science and Engineering, Inha University)
Ko, Hyun-Sung (Department of Materials Science and Engineering, Inha University)
Jin, Chang-Hyun (Department of Materials Science and Engineering, Inha University)
Lee, Chong-Mu (Department of Materials Science and Engineering, Inha University)
Publication Information
Bulletin of the Korean Chemical Society / v.33, no.10, 2012 , pp. 3368-3372 More about this Journal
Abstract
The $Bi_2O_3$ nanowires are highly sensitive to low concentrations of $NO_2$ in ambient air and are almost insensitive to most other common gases. However, it still remains a challenge to enhance their sensing performance and detection limit. This study examined the influence of the encapsulation of ${\beta}-Bi_2O_3$ nanorods with $In_2O_3$ on the $NO_2$ gas sensing properties. ${\beta}-Bi_2O_3-core/In_2O_3-shell$ nanorods were fabricated by a two-step process comprising the thermal evaporation of $Bi_2O_3$ powders and sputter-deposition of $In_2O_3$. Multiple networked ${\beta}-Bi_2O_3-core/In_2O_3-shell$ nanorod sensors showed the responses of 12-156% at 1-5 ppm $NO_2$ at $300^{\circ}C$. These response values were 1.3-2.7 times larger than those of bare ${\beta}-Bi_2O_3$ nanorod sensors at 1-5 ppm $NO_2$. The enhancement in the response of ${\beta}-Bi_2O_3$ nanorods to $NO_2$ gas by the encapsulation by $In_2O_3$ can be accounted for based on the space-charge model.
Keywords
$Bi_2O_3$; $In_2O_3$; Nanorods; Sensor; $NO_2$;
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1 Ogawa, H.; Nishikawa, M.; Abe, A. J. Appl. Phys. 1982, 53, 4448.   DOI   ScienceOn
2 Barsan, N.; Weimar, U. J. Electroceram. 2001, 7, 143.   DOI   ScienceOn
3 Weis, T.; Lipperheide, R.; Wille, U.; Brehme, S. J. Appl. Phys. 2002, 92, 1411.   DOI   ScienceOn
4 Lu, Y.; Zhong, J. Norwood; Todd, S., Ed.; Artech House, Inc.: MA, 2004.
5 Gundiah, G.; Govindaraj, A.; Rao, C. N. R. Chem. Phys. Lett. 2002, 351, 189.   DOI   ScienceOn
6 Zhang, H. Z.; Kong, Y. C.; Wang, Y. Z.; Du, X. Bai, Z. G.; Wang, J. J.; Yu, D. P.; Ding, Y.; Hang, Q. L.; Feng, S. Q. Solid State Commun. 1999, 109, 677.   DOI   ScienceOn
7 Kim, B. C.; Sun, K. T.; Park, K. S.; Im, K. J.; Noh, T.; Sung, M. Y.; Kim, S.; Nahm, S.; Choi, Y. N.; Park, S. S. Appl. Phys. Lett. 2002, 80, 479.   DOI   ScienceOn
8 Kim, H.; Park, S.; Jin, C.; Lee, C. Nano: Brief Reports and Reviews 2011, 6, 455.
9 Gao, Y. H.; Bando, Y.; Sato, T.; Zhang, Y. F.; Gao, X. Q. Appl. Phys. Lett. 2002, 81, 2267.   DOI   ScienceOn
10 Tang, C. C.; Fan, S. S.; de la Chapelle, M. L.; Li, P. Chem. Phys. Lett. 2001, 333, 12.   DOI   ScienceOn
11 Sanchez-Castillo, M. A.; Couto, C.; Kim, W. B.; Dumestic, J. A. Angew. Chem. 2004, 116, 1160.   DOI   ScienceOn
12 Belysheva, T. V.; Bogovtseva, L. P.; Kazachkov, E. A.; Serebryakova, N. V. J. Anal. Chem. 2003, 58, 583.   DOI
13 Jagerszki, G.; Gyurcsányi, R. E.; Hofler, L.; Pretsch, E. Nano Lett. 2007, 7, 1609.   DOI   ScienceOn
14 Park, Y. W.; Jung, H. J.; Yoon, S. G. Sens. Actuators B 2011, 156, 709.   DOI   ScienceOn
15 Oshima, Y.; Onga, A. Phys. Rew. Lett. 2003, 91, 205503.   DOI   ScienceOn
16 Ferro, R.; Rodriguez, J. A.; Bertrand, P. Thin Solid Films 2008, 516, 2225.   DOI   ScienceOn
17 Xu, C.; Tamaki, J.; Miura, N.; Yamazoe, N. Sens. Actuators B 1991, 3, 147.   DOI   ScienceOn
18 Zhu, C. L.; Chen, Y. J.; Wang, R. X.; Wang, L. J.; Cao, M. S.; Shi, X. L. Sens. Actuators B 2009, 140, 185.   DOI   ScienceOn
19 Cabot, A.; Marsal, A.; Arbiol, J.; Morante, J. R. Sens. Actuators B 2004, 99, 74.   DOI   ScienceOn
20 Fruth, V.; Popa, M.; Berger, D.; Ramer, R.; Gartner, M.; Ciulei, A.; Zaharescu, M. J. Eur. Ceram. Soc. 2005, 25, 2171.
21 Fan, H. T.; Teng, X. M.; Pan, S. S.; Ye, C.; Li, G. H.; Zhang, L. D. Appl. Phys. Lett. 2005, 87, 231916.   DOI   ScienceOn
22 Zhou, L.; Wang, W.; Xu, H.; Sun, S.; Shang, M. Chem. Eur. J. 2009, 15, 1776.   DOI   ScienceOn
23 Thayer, R. L.; Randall, C. A.; Trolier-McKinstry, S. J. Appl. Phys. 2003, 94, 1941.   DOI   ScienceOn
24 Sardar, K.; Fang, T.; Yang, T. W. J. Am. Ceram. Soc. 2007, 90, 4033.
25 Gujar, T. P.; Shinde, V. R.; Lokhande, C. D.; Han, S. H. J. Power Sources 2006, 161, 1479.   DOI   ScienceOn
26 Shen, G.; Chen, P.; Ryu, K.; Zhou, C. J. Mater. Chem. 2009, 19, 828.   DOI   ScienceOn
27 Kim, H. W.; Myung, J. H.; Shim, S. H. Solid State Commun. 2006, 137, 196.   DOI   ScienceOn
28 Gujar, T. P.; Shinde, V. R.; Lokhande, C. D.; Han, S. H. Mater. Sci. Eng. B 2006, 133, 177.   DOI   ScienceOn
29 Qiu, Y.; Liu, D.; Yang, J.; Yang, S. Adv. Mater. 2006, 8, 2604.
30 Gou, X.; Li, R.; Wang, G.; Chen, Z.; Wexler, D. Nanotechnol. 2009, 20, 495501.   DOI   ScienceOn