• Journal of Welding and Joining
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• v.10 no.3
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• pp.63-72
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• 1992

The joining methods of ceramics to metals which can be expected to obtain high temperature strength are mainly classified into the solid-state diffusion bonding method and the active brazing method. Between these two, the solid-state diffusion bonding method is given attentions as substituting method for active brazing method due to being capable of obtaining higher bonding strength at high temperature and accurate bonding. In this paper, the solid-state diffusion bonding of $Al_{2}$O$_{3}$ ceramics to Ni-Cr-Mo alloy steel (SNCM21) using insert metal was carried out. The insert metal employed in this study was experimentally home-made, Ag-Cu-Ti alloy. Influence of several bonding parameters of $Al_{2}$O$_{3}$SNCM21 joint was quantitatively evaluated by bonding strength test, and microstructural analyses at the interlayer were performed by SEM/EDX. From above experiments, the optimum bonding condition of the solid-state diffusion bonding of $Al_{2}$O$_{3}$/SNCM21 using Ag-Cu-Ti insert metal was determined. Futhermore, high temperature strength and thermal-shock properties of $Al_{2}$O$_{3}$/SNCM21 joint were also examined. The results obtained are as follows. 1. The maximum bonding strength was obtained at the temperature of 95% melting point of insert metal. 2. The high temperature strength of $Al_{2}$O$_{3}$/SNCM21 joint appeared to bemaximum value at test temperature 500.deg.C and the bonding strength with increasingtemperature showed parabolic curve. 3. The strength of thermal-shocked specimens was far deteriorated than those of as-bonded specimens. Especially, water-quenched specimen after heated up to 600.deg. C was directly fractured in quenching.

• Korean Journal of Materials Research
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• v.12 no.10
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• pp.820-824
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• 2002

It is of importance to know that the bonding strength and interfacial stress of SOI wafer pairs to meet with mechanical and thermal stresses during process. We fabricated Si/2000$\AA$-SiO$_2$ ∥ 2000$\AA$-SiO$_2$/Si SOI wafer pairs with electric furnace annealing, rapid thermal annealing (RTA), and fast linear annealing (FLA), respectively, by varying the annealing temperatures at a given annealing process. Bonding strength and interfacial stress were measured by a razor blade crack opening method and a laser curvature characterization method, respectively. All the annealing process induced the tensile thermal stresses. Electrical furnace annealing achieved the maximum bonding strength at $1000^{\circ}C$-2 hr anneal, while it produced constant thermal tensile stress by $1000^{\circ}C$. RTA showed very small bonding strength due to premating failure during annealing. FLA showed enough bonding strength at $500^{\circ}C$, however large thermal tensile stress were induced. We confirmed that premated wafer pairs should have appropriate compressive interfacial stress to compensate the thermal tensile stress during a given annealing process.

• Journal of the Korean Geosynthetics Society
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• v.6 no.1
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• pp.39-43
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• 2007

Geocomposites of needle punched and spunbonded nonwovens having the reinforcement and drainage functions were manufactured by use of thermal bonding method. The physical properties (e.g. tensile, tear and bursting strength, permittivity) of these multi-layered nonwovens were dependent on the processing parameters of temperatures, pressures, bonding periods etc. - in manufacturing by use of thermal bonding method. Therefore, it is very meaningful to optimize the processing parameters and physical properties of the geocomposites by thermal bonding method. In this study, an algorithm has been developed to optimize the process of the geocomposites using an artificial neural network (ANN). Geocomposites were employed to examine the effects of manufacturing methods on the analysis results and the neural network simulations have been applied to predict the changes of the nonwovens performances by varying the processing parameters.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.140-151
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• 1996

In this paper, we analyze the variations of thermal characteristics of LD (laser diode) arrays packaged by a flip-chip bonding method. When we simulate the temperature distribution in LD arrays with a BEM (boundary element method) program coded in this paper, we find that thermal crosstalks in LD arrays packaged by the flip-chip bonding method increases by 250-340% compared to that in LD arrays packaged by previous methods. In the LD array module packaged by the flip-chip bonding technique without TEC (thermo-electric cooler), the important parameter is the absolute temperature of the active layer increased due cooler), the important parameter is the absolute temperature of th eactiv elayers of LD arrays to thermal crosstalk. And we find that the temperature of the active layers of LD arrays increases up to 125$^{\circ}C$ whenall four LDs, without a carefully designed heatsink, are turned on, assuming the power consumption of 100mW from each LD. In order to reduce thermal crosstalk we propose a heatsink sturcture which can decrease the temeprature at the active layer by 40%.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.5
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• pp.111-116
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• 2018

Thermal fusion bonding is a method to enclose open microchannels fabricated on polymer chips for use in lab-on-a-chip (LOC) devices. Polymethyl methacrylate (PMMA) is utilized in various biomedical-microelectromechanical systems (bio-MEMS) applications, such as medical diagnostic kits, biosensors, and drug delivery systems. These applications utilize PMMAs biochemical compatibility, optical transparency, and mold characteristics. In this paper, we elucidate both the conformational entanglement of PMMA molecules at the contact interfacial regime, and the qualitative nature of the thermal fusion bonding phenomena through systematic molecular dynamics simulations.

• Carbon letters
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• v.15 no.4
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• pp.282-289
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• 2014

Blends of poly(vinyl alcohol) (PVA), polyethyleneimine (PEI), and graphene oxide (GO) were prepared by solution casting method. Calorimetric thermal properties of the blends were investigated. The $T_gs$ of PVA/PEI blends were higher than the $T_gs$ of either of the component polymers at low concentrations of PEI. These abnormal increases of $T_gs$ may be due to the negative entropy of mixing which is associated with strong hydrogen bonding between PVA and PEI. The degree of depression of $T^0_ms$ was not reduced by the negative entropy of mixing, since strong hydrogen bonding also causes an increase in the magnitude of negative ${\chi}$ between PVA and PEI. The $T_g$ of PVA was increased significantly by adding 0.7 wt.% GO into PVA. The magnitude of negative ${\chi}$ was increased by adding GO into the blends of PVA and PEI.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.949-954
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• 2011

In this study, the characteristics and error ranges of the mechanical bonding strength were analyzed according to before and after thermal shock test for various chips of automotive application component using Sn-3.0Ag-0.5Cu solder. In the after thermal shock test, the mechanical bonding strengths tend to decrease, meanwhile decreasing rates of mechanical strengths were less then 12% at specimen's bonding area below 3.5$mm^2$, and were from 17 to 21% at specimen's bonding area above 12 $mm^2$. On the other hand, Specimen's mean deviation rates were about 5% at specimen's bonding area more than 12 $mm^2$. Inversely, at specimen's bonding area is less then 3.5 $mm^2$, mean deviation rates were increased to about 8%. It means that the smaller device size is, the larger mean deviation rate. In addition, error ranges and deviation rates of the mechanical bonding strengths may differ slightly depending on their bonding area. Furthermore, process conditions as well as method of mechanical reliability evaluation should be established to reduce the error ranges of bonding strength.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Textile Coloration and Finishing
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• v.32 no.3
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• pp.176-183
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• 2020

In order to study wearable air cushion materials capable of responding to massive impact in high-altitude fall situation, high tenacity woven fabrics were bonded by heat only depending on various type of thermoplastic films and then mechanical properties were measured. Tensile strength, elongation, and 100% modulus measurement results for 4 types of films show that TPU-2 has higher impact resistance and easier expansion than PET-1. After thermal bonding, the combination with the highest tensile strength was a material with a TPU-2 film for nylon and a PET-2 film for PET, so there was a difference by type of fabric. The tear strength of the bonded materials were increased compared to the fabric alone, which shows that durability against damage such as tearing can be obtained through film adhesion. All of the peel strengths exceeded the values required by automobile airbags by about 5 times, and the TPU-2 bonded fabric showed the highest value. The air permeability was 0 L/dm2 /min. For both the film and the bonded material, which means tightness between the fabric and the film through thermal bonding. It is expected to be applied as a wearable air cushion material by achieving a level of mechanical properties similar to or superior to that of automobile airbags through the method of bonding film and fabric by thermal bonding.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.411-414
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• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PT layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PT layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PT layer of c-axial orientation rained thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PT layer were measured, too.